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    This document outlines a series of lectures on electronic phenomena in mesoscopic structures. It introduces concepts like the transistor, graphene, carbon nanotubes, and the quantized Hall effect. The lectures will cover topics like quantum transport in solids, emergent behavior in electronic materials, and fractional quantum Hall physics.

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    295 Lec 1

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    This document outlines a series of lectures on electronic phenomena in mesoscopic structures. It introduces concepts like the transistor, graphene, carbon nanotubes, and the quantized Hall effect. The lectures will cover topics like quantum transport in solids, emergent behavior in electronic materials, and fractional quantum Hall physics.

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    This document outlines a series of lectures on electronic phenomena in mesoscopic structures. It introduces concepts like the transistor, graphene, carbon nanotubes, and the quantized Hall effect. The lectures will cover topics like quantum transport in solids, emergent behavior in electronic materials, and fractional quantum Hall physics.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    9 views18 pages

    295 Lec 1

    Uploaded by

    tonygh2023
    This document outlines a series of lectures on electronic phenomena in mesoscopic structures. It introduces concepts like the transistor, graphene, carbon nanotubes, and the quantized Hall effect. The lectures will cover topics like quantum transport in solids, emergent behavior in electronic materials, and fractional quantum Hall physics.

    Copyright:

    © All Rights Reserved
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    Download as pdf or txt
    of 18

    From Pencil Lead to Relativistic

    Quantum Physics
    or
    Electronic phenomena in
    mesoscopic structures

    • Lecture #1: Overview

    • Lecture #2: Quantum Transport in Solids

    • Lecture #3: Quantum Theory of Graphene


    Why Study Electronic
    Materials and Devices?

    1. The Practical
    Why Study Electronic
    Materials and Devices?
    2. The Fundamental
    A laboratory for the study of quantum many
    body physics
    • Collective behavior
    • Symmetry breaking
    • Role of electron electron interactions
    • Role of disorder
    • Emergent low energy behavior:
    - emergent “quasiparticles”
    - topological order
    The Transistor
    Bardeen, Brattain, Shockley, 1947
    Nobel Prize 1956
    Field Effect Transistor

    MOSFET:
    Metal-Oxide-Silicon
    Field Effect Transistor
    A faucet for electrons
    Moore’s Law

    The number of transistors on a chip doubles


    approximately every two years
    Optimistic?
    Macroscopic: big things
    Classical physics dominates:

    ~ 1 cm
    V = IR ; R = ρ L/A ;
    Drude model: electrons ~ billiard balls
    ρ ~ m/(ne2τ)

    Microscopic: atoms & molecules


    Quantum physics dominates:

    H Ψn = En Ψn

    ~ 1 Å = 10-8 cm
    Mesoscopic
    • Many atoms, but quantum physics plays a
    fundamental role

    • Quantum effects are important for systems


    smaller than the thermal decoherence
    length L < Lϕ(T)

    • Small size OR Low temperature


    Flatland ... (1980’s)
    Semiconductor Heterostructures : “Top down technology”
    → Two dimensional electron gas (2DEG)

    V(z) conduction band


    energy
    z

    AlxGa1-x As

    ∆E ~ 20 mV ~ 250°K
    Ga As
    2D subband z
    2DEG

    Fabricated with atomic precision using MBE.


    1980’s - 2000’s : advances in ultra high mobility samples
    2D to 1D : Quantum Wires (1990’s):
    1D for E < ∆E: the 1D subband spacing

    1. Split Gate Devices: (Tarucha et al. 95) =2


    ∆E ~
    2m * L2

    ∆E ~ 5 meV

    2. Cleaved Edge Overgrowth (Yacoby et al. 96)

    ∆E ~ 20 meV
    Molecular scale confinement (1990’s-2000’s)
    “Bottom up technology”
    1. 2 Dimensions : Graphene
    Graphite

    • Graphene = single layer of graphite


    A unique 2D electronic material
    • Structural Rigidity due to strong in plane bonds
    • Electrical Conductivity due to π electrons
    • Purely 2 Dimensional at room temperature
    Isolating Single Planes of Graphene
    Philip Kim (Columbia)
    Zhang et al. APL 2004

    “Nanopencil” on AFM cantilever


    deposits ~ 15 layer graphite films

    Andre Geim (Manchester)


    Novoselov et al. Science 2004

    Individual layers on SiO2 prepared


    by mechanical exfoliation.

    SEM
    2. 1 Dimension : Carbon Nanotubes
    Graphene wrapped
    into a cylinder

    A Molecular Quantum Wire


    ∆E ~ 1 eV ~ 104 K

    “rope” TEM

    ~ 1 nm

    single tube STM ~ 1 µm AFM


    The Hall Effect
    A tool for characterizing an electronic device
    G G G G G G
    Force: F = Fe + Fm = q ( E + v × B )

    Electric Field (Fy=0): E y = v x Bz

    Current density: J x = nqv x


    q = charge of carrier
    ρxy n = carrier density
    Ey B
    Hall Conductivity ρ xy = =
    B J x nq
    The Hall conductivity measures
    • The density of the mobile charge carriers
    • The sign of the charge carriers (e<0!)
    The Quantized Hall Effect
    Hall effect in 2DEG MOSFET at large magnetic field
    Von Klitzing,1981 (Nobel 1985)

    • Quantization: ρ xy = RQ / n n = integer accurate to 10-9 !

    • Quantum Resistance: RQ = h / e 2 = 25.812 807 kΩ


    • Explained by quantum mechanics of electrons in a magnetic field
    Fractional Quantized Hall Effect
    Tsui, Stormer and Gossard 1982

    Stormer, Laughlin, Tsui


    1998 Nobel Prize

    • Higher Magnetic fields, Higher quality samples


    • Quantization: ρ xy = ( p / q) RQ
    • Explained by Laughlin (1982):
    - Collective behavior of a “quantum fluid”
    - Emergent “quasiparticles” with fractional charge e/q
    Next Time:
    Quantum Transport in Solids
    • Waves and particles in quantum mech.
    • Quantization in atoms
    • Metals vs Insulators : Energy gap
    • Emergent particles in a solid
    • Landau quantization in a magnetic field
    and the quantum Hall effect

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