1. Which of the following is not a characteristic directions.

property of (d) different arrangement of constituent

solids? particles in
(a) Intermolecular distances are short. different directions.
(b) Intermolecular forces are weak.
(c) Constituent particles have fixed positions. “Crystalline solids are anisotropic in nature.
(d) Solids oscillate about their mean positions. What is the
5. Which of the following is not a characteristic meaning of anisotropic in the given statement?
of a crystalline (a) A regular pattern of arrangement of particles
solid ? which
(a) Definite and characteristic heat of fusion. repeats itself periodically over the entire crystal.
(b) Isotropic nature. (b) Different values of some of physical
(c) A regular periodically repeated pattern of properties are
arrangement shown when measured along different
of constituent particles in the entire crystal. directions in
(d) A true solid the same crystals.
Which of the following is not a crystalline solid? (c) An irregular arrangement of particles over
(a) KCl (b) CsCl the entire
(c) Glass (d) Rhombic S crystal.
7. Which of the following statements about (d) Same values of some of physical properties
amorphous solids are shown
is incorrect ? when measured along different directions in the
(a) They melt over a range of temperature same
(b) They are anisotropic crystals.
(c) There is no orderly arrangement of particles
(d) They are rigid and incompressible
Which of the following is not a crystalline solid?
(a) KCl (b) CsCl
(c) Glass (d) Rhombic S
9. Which of the following is an amorphous
solid ?
(a) Graphite (C) (b) Quartz glass (SiO2)
(c) Chrome alum (d) Silicon carbide (SiC)
Solid CH4 is
10. Which of the following statement is not true (a) ionic solid (b) covalent solid
about (c) molecular solid (d) does not exist
amorphous solids ? 15. An example of a covalent crystalline solid is:
(a) On heating they may become crystalline at (a) Si (b) Al
certain (c) NaF (d) Ar
temperature. 16. Among solids, the highest melting point is
(b) They may become crystalline on keeping for exhibited by
long time. (a) Covalent solids (b) Ionic solids
(c) Amorphous solids can be moulded by (c) Pseudo solids (d) Molecular solids
heating. 17. Which of the following exists as covalent
(d) They are anisotropic in nature. crystals in the
solid state ?
(a) Iodine (b) Silicon
The sharp melting point of crystalline solids is (c) Sulphur (d) Phosphorus
due to _____. 18. The major binding force of diamond, silicon
(a) a regular arrangement of constituent and quartz is
particles observed (a) electrostatic force (b) electrical attraction
over a short distance in the crystal lattice. (c) covalent bond force (d) non-covalent bond
(b) a regular arrangement of constituent force
particles observed 19. In graphite electrons are :
over a long distance in the crystal lattice. (a) localised on each carbon atom
(c) same arrangement of constituent particles in (b) spread out between the sheets
different (c) localised on every third carbon atom
(d) present in antibonding orbital. (c) 4 (d) 6
20. Which one of the following forms a 36. In face-centred cubic lattice, a unit cell is
molecular solid when shared equally
solidified? by how many unit cells
(a) Silicon carbide (b) Calcium fluoride (a) 2 (b) 4
(c) Rock salt (d) Methane (c) 6 (d) 8
21. Which of the following is a network solid ? 37. The number of atoms per unit cell of bcc
(a) SO2 (solid) (b) I2 structure is
(c) Diamond (d) H2O (Ice) (a) 1 (b) 2
22. Which of the following solids is not an (c) 4 (d) 6
electrical conductor? When molten zinc is converted into solid state,
(a) Mg (s) (b) TiO (s) it acquires
(c) I2 (s) (d) H2O (s) hcp structure. The number of nearest
23. Iodine molecules are held in the crystals neighbours of Zn will
lattice by ______. be
(a) london forces (a) 6 (b) 12
(b) dipole-dipole interactions (c) 8 (d) 4
(c) covalent bonds 39. Hexagonal close packed arrangement of ions
(d) coulombic forces is described
24. Which of the following is not the as
characteristic of ionic (a) ABC ABA (b) ABC ABC
solids? (c) ABABA (d) ABBAB
(a) Very low value of electrical conductivity in 42. The number of octahedral voids present in a
the molten lattice is A .
state. The number of closed packed particles, the
(b) Brittle nature. number of
(c) Very strong forces of interactions. tetrahedral voids generated is B the number
(d) Anisotropic nature. of closed
25. Graphite is a good conductor of electricity packed particles
due to the (a) A- equal, B- half (b) A- twice, B- equal
presence of ______. (c) A- twice , B- half (d) A- equal, B- twice
(a) lone pair of electrons (b) free valence
electrons The arrangement ABC ABC .......... is referred to
(c) cations (d) anions as
26. Graphite cannot be classified as ______. (a) Octahedral close packing
(a) conducting solid (b) network solid (b) Hexagonal close packing
(c) covalent solid (d) ionic solid (c) Tetrahedral close packing
27. Which of the following cannot be regarded (d) Cubic close packing
as molecular 47. The total number of tetrahedral voids in the
solid ? face centred
(i) SiC (Silicon carbide) (ii) AlN unit cell is ______.
(iii) Diamond (iv) I2 (a) 6 (b) 8
(a) (i), (ii) and (iii) (b) (ii) and (iii) (c) 10 (d) 12
(c) (iv) (d) (ii) and (iv) 48. What is the coordination number in a square
close packed
28. Crystals can be classified into basic crystal structure in two dimensions ?
units, equal to (a) 2 (b) 3
(a) 7 (b) 4 (c) 4 (d) 6
(c) 14 (d) 2 In which of the following arrangements
29. How many three dimensional crystal lattice octahedral voids
are possible? are formed ?
(a) 20 (b) 7 (i) hcp (ii) bcc
(c) 14 (d) 10 (iii) simple cubic (iv) fcc
The number of atoms contained in a fcc unit cell (a) (i), (ii) (b) (i), (iv)
of a (c) (iii) (d) (ii), (iv)
monoatomic substance is 51. Which of the following is the correct
(a) 1 (b) 2 increasing order of
packing efficiency for hcp, bcc and simple cubic spheres constituting fcc, bcc and simple cubic
lattice? unit cell are
(a) hcp < bcc < simple cubic respectively ________.
(b) bcc < hcp < simple cubic
(c) simple cubic < bcc < hcp
(d) simple cubic < hcp < bcc
Total volume of atoms present in bcc unit cell is.

CsBr crystallises in a body centered cubic

lattice. The unit
cell length is 436.6 pm. Given that the atomic
mass of Cs =
Total volume of atoms present in a face- 133 and that of Br = 80 amu and Avogadro
centred cubic unit cell of a metal is (r is atomic number being
radius) 6.02 × 1023 mol–1, the density of CsBr is
(a) 0.425 g/cm3 (b) 8.5 g/cm3
(c) 4.25 g/cm3 (d) 82.5 g/cm3
An element occuring in the bcc structure has
12.08 × 1023unit
The fraction of total volume occupied by the cells. The total number of atoms of the element
atoms present in a simple cube is in these
cells will be
(a) 24.16 × 1023 (b) 36.18 × 1023
(c) 6.04 × 1023 (d) 12.08 × 1023
The cubic unit cell of a metal (molar mass =
63.55g mol–1)
56. Percentages of free space in cubic close
has an edge length of 362 pm. Its density is
packed structure
8.92g cm–3.
and in body centered packed structure are
The type of unit cell is
respectively
(a) primitive (b) face centered
(a) 30% and 26% (b) 26% and 32%
(c) body centered (d) end centered
(c) 32% and 48% (d) 48% and 26%
A metal crystallizes in 2 cubic phases fcc and bcc
57. The empty space in the body centred cubic
whose
lattice is
unit cell lengths are 3.5 Å and 3.0Å respectively.
(a) 68% (b) 52.4%
The ratio
(c) 47.6% (d) 32%
of their densities is
(e) 74%
(a) 0.72 (b) 2.04
58. Which one of the following statements
(c) 1.46 (d) 3.12
about packing in
70. Which of the following statements is not
solids is incorrect ?
correct ?
(a) Coordination number in bcc mode of packing
(a) Vacancy defect results in decrease in density
is 8.
of
(b) Coordination number in hcp mode of
substance.
packing is 12.
(b) Vacancy defect can develop when a
(c) Void space in hcp mode of packing is 32%.
substance is
(d) Void space is ccp mode of packing is 26%.
heated.
59. A metallic crystal crystallizes into a lattice
(c) Interstitial defect increases the density of the
containing a
substance.
sequence of layers AB AB AB......Any packing of
(d) Ionic solids show interstitial defects only.
spheres
71. Which defect is shown in the given figure?
leaves out voids in the lattice. What percentage
of volume
of this lattice is empty space?
(a) 74% (b) 26%
(c) 50% (d) none of these.
The edge lengths of the unit cells in terms of
the radius of
 (a) Low co-ordination nos.
(a) Frenkel defect (b) Impurity defect (b) High co-ordination
(c) Schottky defect (d) Vacancy defect (c) Small difference in the size of cations and
Each of the following solids show, the Frenkel anions
defect (d) None of these
(a) ZnS (b) AgBr 84. The crystal with metal deficiency defect is
(c) AgI (d) KCl (a) NaCl (b) FeO
74. When electrons are trapped into the crystal (c) KCl (d) ZnO
in anion 85. Which of the following has Frenkel defects?
vacancy, the defect is known as : (a) Sodium chloride (b) Graphite
(a) Schottky defect (b) Frenkel defect (c) Silver bromide (d) Diamond
(c) Stoichiometric defect (d) F-centre 86. Which of the following crystals does not
75. Schottky defect in crystals is observed when exhibit Frenkel
(a) an ion leaves its normal site and occupies an defect?
interstitial (a) AgBr (b) AgCl
site (c) KBr (d) ZnS
(b) unequal number of cations and anions are 87. Due to Frenkel defect, the density of ionic
missing from solids
the lattice (a) decreases (b) increases
(c) density of the crystal increases (c) neither (a) nor (b) (d) does not change
(d) equal number of cations and anions are 88. In a solid lattice the cation has left a lattice
missing from site and is located
the lattice at an interstitial position, the lattice defect is :
76. The appearance of colour in solid alkali (a) Interstitial defect (b) Valency defect
metal halides is (c) Frenkel defect (d) Schottky defect
generally due to 89. Doping of AgCl crystals with CdCl2 results in
(a) Schottky defect (b) Frenkel defect (a) Frenkel defect
(c) Interstitial positions (d) F-centre (b) Schottky defect
77. Crystal defect indicated in the diagram (c) Substitutional cation vacancy
below is (d) Formation of F - centres
78. Schottky defect generally appears in : 90. Cations are present in the interstitial sites in
(a) NaCl (b) KCl ________.
(c) CsCl (d) all of these (a) Frenkel defect (b) Schottky defect
79. Which defect causes decrease in the density (c) Vacancy defect (d) Metal deficiency defect
of crystal 91. What is the energy gap between valence
(a) Frenkel (b) Schottky band and
(c) Interstitial (d) F – centre conduction band in crystal of insulators ?
80. Which statement does not make sense? (a) Both the bands are overlapped with each
(a) Frenkel defect is not found in alkali metal other
halides (b) Very small
(b) Schottky defect is very common in alkali (c) Infinite
metal halides (d) Very large
(c) Schottky defect lowers the density of the
crystal 92. Which of the following is non stoichiometric
(d) Frenkel defect lowers the density of the defect?
crystal. (i) Metal excess defect (ii) Impurity defect
81. Frenkel and Schottky defects are : (iii) F-centre (iv) Metal deficiency defect
(a) nucleus defects (b) non-crystal defects (a) (i) and (iv) (b) (i), (iii) and (iv)
(c) crystal defects (d) nuclear defects (c) (iii) and (ii) (d) All of these
82. Equal number of atoms or ion missing from 93. Which kind of defects are introduced by
normal lattice doping ?
point creating a vacancy due to (a) Dislocation defect (b) Schottky defect
(a) Frenkel defect (b) Mass defect (c) Frenkel defects (d) Electronic defects
(c) Schottky defect (d) Interstitial defect 94. Silicon doped with electron – rich impurity
83. In stoichiometric defects, the types of forms _______.
compound exhibit (a) p-type semiconductor
Frenkel defects have/has (b) n-type semiconductor
(c) intrinsic semiconductor 105. Magnetic moment of electron is due to
(d) insulator which of the
95. Which of the following defects is also known following reason?
as dislocation (a) Due to its orbital motion around the nucleus.
defect ? (b) Due to its spin around its own axis.
(a) Frenkel defect (c) Due to negative charge on electron.
(b) Schottky defect (d) Both (a) and (b).
(c) Non – stoichiometric defect Which of the following type of substances can
(d) Simple interstitial defect be
96. Doping of silicon (Si) with boron (B) leads permanently magnetised?
to : (a) Diamagnetic (b) Ferromagnetic
(a) n-type semiconductor (b) p-type (c) Ferrimagnetic (d) Antiferromagnetic
semiconductor 108. Which of the following structure
(c) metal (d) insulator represents
97. On doping Ge metal with a little of In or Ga, ferrimagnetism?
one gets (a) n p n p n p (b) n n n n n
(a) p-type semi conductor (b) n-type semi (c) p p p p p (d) n n p n n p
conductor 109. Which of the following statement is not
(c) insulator (d) rectifier correct?
98. With which one of the following elements (a) Paramagnetic substances lose their
silicon should be magnetism in the
doped so as to give p-type of semiconductor ? absence of magnetic field.
(a) Germanium (b) Arsenic (b) Diamagnetic substances are weakly
(c) Selenium (d) Boron magnetised in
99. To get a n- type semiconductor, the impurity magnetic field in opposite direction.
to be added to (c) Ferromagnetic substances becomes
silicon should have which of the following paramagnetic on
number of heating.
valence electrons (d) In antiferromagnetism domains are
(a) 1 (b) 2 oppositely oriented
(c) 3 (d) 5 and cancel out each other’s magnetic moment.
100. If we mix a pentavalent impurity in a 110. An element containing an odd number of
crystal lattice of electrons is:
germanium, what type of semiconductor (a) Paramagnetic (b) Diamagnetic
formation will (c) Antiferromagnetic (d) None of these
occur? 111. Which of the following oxides behaves as
(a) p-type (b) n-type conductor or
(c) both (a) and (b) (d) None of the two. insulator depending upon temperature ?
101. The addition of arsenic to germanium (a) TiO (b) SiO2
makes the latter a (c) TiO3 (d) MgO
(a) metallic conductor (b) intrinsic 112. Which of the following oxides shows
semiconductor electrical properties
(c) mixed conductor (d) extrinsic semiconductor like metals ?
102. Pure silicon doped with phosphorus is a (a) SiO2 (b) MgO
(a) metallic conductor (b) insulator (c) SO2 (s) (d) CrO2
(c) n-type semiconductor (d) p-type 113. Which of the following statements is not
semiconductor true ?
103. Which of the folliowing metal oxides is (a) Paramagnetic substances are weakly
anti-ferromagnetic attracted by
in nature? magnetic field.
(a) MnO2 (b) TiO2 (b) Ferromagnetic substances cannot be
(c) VO2 (d) CrO2 magnetised
104. Which of the following compound is like permanently
metallic copper in (c) The domains in antiferromagnetic
its conductivity and appearance? substances are
(a) VO3 (b) TiO3 oppositely oriented with respect to each other.
(c) ReO3 (d) CrO2
(d) Pairing of electrons cancels their magnetic
moment in
the diamagnetic substances.
114. A ferromagnetic substance becomes a
permanent magnet
when it is placed in a magnetic field because
________.
(a) all the domains get oriented in the direction
of magnetic
field.
(b) all the domains get oriented in the direction
opposite
to the direction of magnetic field.
(c) domains get oriented randomly.
(d) domains are not affected by magnetic field.