XTR101

SBOS146A − OCTOBER 1986 − REVISED AUGUST 2004

Precision, Low Drift

4-20mA TWO-WIRE TRANSMITTER
FEATURES DESCRIPTION
D INSTRUMENTATION AMPLIFIER INPUT: The XTR101 is a microcircuit, 4-20mA, two-wire
− Low Offset Voltage, 30µV max transmitter containing a high accuracy instrumentation
− Low Voltage Drift, 0.75µV/°C max amplifier (IA), a voltage-controlled output current source,
− Low Nonlinearity, 0.01% max and dual-matched precision current reference. This
combination is ideally suited for remote signal conditioning
D TRUE TWO-WIRE OPERATION: of a wide variety of transducers such as thermocouples,
− Power and Signal on One Wire Pair RTDs, thermistors, and strain gauge bridges. State-of-the-
− Current Mode Signal Transmission art design and laser-trimming, wide temperature range
− High Noise Immunity operation, and small size make it very suitable for
D DUAL MATCHED CURRENT SOURCES industrial process control applications. In addition, the
optional external transistor allows even higher precision.
D WIDE SUPPLY RANGE: 11.6V to 40V
The two-wire transmitter allows signal and power to be
D SPECIFICATION RANGE: −40°C to +85°C supplied on a single wire pair by modulating the
D SMALL DIP-14 PACKAGE, CERAMIC AND power-supply current with the input signal source. The
PLASTIC transmitter is immune to voltage drops from long runs and
noise from motors, relays, actuators, switches,
transformers, and industrial equipment. It can be used by
OEMs producing transmitter modules or by data
APPLICATIONS acquisition system manufacturers.
D INDUSTRIAL PROCESS CONTROL:
− Pressure Transmitters IREF1
IREF2 Optional
− Temperature Transmitters External
10 +VCC Transistor
− Millivolt Transmitters 3 11
e1 −
D RESISTANCE BRIDGE INPUTS 8

D THERMOCOUPLE INPUTS
5
D RTD INPUTS 12(1)
XTR101
D CURRENT SHUNT (mV) INPUTS
Span
B
6
D PRECISION DUAL CURRENT SOURCES
D AUTOMATED MANUFACTURING
D POWER/PLANT ENERGY SYSTEM e2 4
+ 9
MONITORING 13(1) E
14 7
2 IOUT
1
Optional
Offset Null

NOTE: (1) Pins 12 and 13 are used for optional BW control.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.

             
 Copyright  1986-2004, Texas Instruments Incorporated
                  

   !       !   

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SBOS146A − OCTOBER 1986 − REVISED AUGUST 2004

This integrated circuit can be damaged by ESD. Texas

ABSOLUTE MAXIMUM RATINGS(1) Instruments recommends that all integrated circuits be
Power Supply, +VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V handled with appropriate precautions. Failure to observe
Input Voltage, e1 or e2 . . . . . . . . . . . . . . . . . . . . ≥ VOUT, ≤ +VCC proper handling and installation procedures can cause damage.
Storage Temperature Range, Ceramic . . . . . . . . . −55°C to +165°C ESD damage can range from subtle performance degradation to
Plastic . . . . . . . . . . −55°C to +125°C complete device failure. Precision integrated circuits may be more
Lead Temperature (soldering, 10s) G, P . . . . . . . . . . . . . . . +300°C susceptible to damage because very small parametric changes could
(wave soldering, 3s) U . . . . . . . . . . . . . . +260°C cause the device not to meet its published specifications.
Output Short-Circuit Duration . . . . . . . Continuous +VCC to IOUT
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +165°C
ORDERING INFORMATION
(1) Stresses above these ratings may cause permanent damage. SPECIFIED
PACKAGE- PACKAGE PACKAGE
PRODUCT TEMPERATURE
Exposure to absolute maximum conditions for extended periods LEAD DESIGNATOR(1) MARKING
RANGE
may degrade device reliability. These are stress ratings only, and
Ceramic XTR101AG
functional operation of the device at these or any other conditions JD
DIP-14 XTR101BG
beyond those specified is not supported.
XTR101 Plastic −40°C to +85°C
N XTR101AP
DIP-14
SO-16 DW XTR101AU
(1) For the most current package and ordering information, see the Package
Option Addendum located at the end of this data sheet.

PIN CONFIGURATION
Top View DIP Top View SO

Zero Adjust 1 16 Zero Adjust

Zero Adjust 1 14 Zero Adjust
Zero Adjust 2 15 Bandwidth
Zero Adjust 2 13 Bandwidth
−In 3 14 B Control
−In 3 12 B Control SOL−16
+In 4 13 IREF2
Surface−Mount
+In 4 DIP 11 IREF2
Span 5 12 IREF1
Span 5 10 IREF1
Span 6 11 E
Span 6 9 E
Out 7 10 +VCC
Out 7 8 +VCC
NC 8 9 NC

NC = No Connection

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SBOS146A − OCTOBER 1986 − REVISED AUGUST 2004

ELECTRICAL CHARACTERISTICS
At TA = +25°C, +VCC = 24VDC, and RL = 100Ω with external transistor connected, unless otherwise noted.
XTR101AG XTR101BG XTR101AP XTR101AU

PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX UNIT
OUTPUT AND LOAD CHARACTERISTICS
Current Linear Operating Region 4 20 ∗ ∗ ∗ ∗ ∗ ∗ mA
Derated Performance 3.8 22 ∗ ∗ ∗ ∗ ∗ ∗ mA
Current Limit 28 38 ∗ ∗ 31 ∗ 31 ∗ mA
Offset Current Error IOS, IO = 4mA ±3.9 ±10 ±2.5 ±6 ±8.5 ±19 ±8.5 ±19 µA
vs Temperature ∆IOS/∆T ±10.5 ±20 ±8 ±15 ±10.5 ±20 ∗ ppm, FS/°C
Full-Scale Output Current
Full-Scale = 20mA ±20 ±40 ±15 ±30 ±30 ±60 ±30 ±60 µA
Error
Power-Supply Voltage VCC, Pins 7 and 8,
Compliance (1)
+11.6 ±40 ∗ ∗ ∗ ∗ ∗ ∗ VDC

Load Resistance
At VCC = +24V,
IO = 20mA
600 ∗ ∗ ∗ Ω

At VCC = +40V,
IO = 20mA
1400 ∗ ∗ ∗ Ω

SPAN

Output Current Equation RS in Ω, e1 and e2 in V I

O
ƪ
+ 4mA ) 0.016ampsńvolt ) 40ńR ǒ S
Ǔƫǒe2 * e1Ǔ
Span Equation RS in Ω ƪ
S + 0.016ampsńvolt ) 40ńR ǒ S
Ǔƫ A/V

vs Temperature Excluding TCR of RS ±30 ±100 ∗ ∗ ∗ ∗ ∗ ∗ ppm/°C

Untrimmed Error(2) εSPAN −5 −2.5 0 ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ %
Nonlinearity εNONLINEARITY 0.01 ∗ ∗ ∗ %
Hysteresis 0 ∗ ∗ ∗ %
Dead Band 0 ∗ ∗ ∗ %
INPUT CHARACTERISTICS
Impedance: Differential 0.4 3 ∗ ∗ ∗ GΩ pF
Common-Mode 10 3 ∗ ∗ ∗ GΩ pF
Voltage Range, Full-Scale ∆e = (e2 − e1)(3) 0 1 ∗ ∗ ∗ ∗ ∗ ∗ V
Offset Voltage VOS ±30 ±60 ±20 ±30 ∗ ±100 ∗ ±100 µV
vs Temperature ∆VOS/∆T ±0.75 ±1.5 ±0.35 ±0.75 ∗ ∗ ∗ ∗ µV/°C
Power-Supply Rejection ∆VCC/PSRR = VOS Error 110 125 ∗ ∗ ∗ 122 ∗ 122 dB
Bias Current IB 60 150 ∗ ∗ ∗ ∗ ∗ ∗ nA
vs Temperature ∆IB/∆T 0.30 1 ∗ ∗ ∗ ∗ ∗ ∗ nA/°C
Offset Current IOSI 10 ±30 ∗ ±20 ∗ ∗ ∗ ∗ nA
vs Temperature ∆IOSI/∆T 0.1 0.3 ∗ ∗ ∗ ∗ ∗ ∗ nA/°C
Common-Mode
Rejection (4)
DC 90 100 ∗ ∗ ∗ ∗ ∗ ∗ dB

Common-Mode Range e1 and e2 with Respect to Pin 7 4 6 ∗ ∗ ∗ ∗ ∗ ∗ V

CURRENT SOURCES
Magnitude 1 ∗ ∗ ∗ mA
Accuracy VCC = 24V,
±0.1 ±0.02
VPIN 8 − VPIN 10, 11 = 19V, ±0.06 ±0.075 ±0.2 ±0.37 ±0.2 ±0.37 %
7 5
R2 = 5kΩ, see Figure 5
vs Temperature ±50 ±80 ±30 ±50 ∗ ∗ ∗ ∗ ppm/°C
vs VCC ±3 ∗ ∗ ∗ ppm/V
vs Time ±8 ∗ ∗ ∗ ppm/month
Compliance Voltage Ratio
Match
With Respect to
Pin 7 Tracking
0 VCC − 3.5 ∗ ∗ ∗ ∗ ∗ ∗ V

±0.01 ±0.0 ±0.00

Accuracy (1 − IREF1/IREF2) × 100% ±0.04 ±0.031 ±0.088 ±0.031 ±0.088 %
4 6 9
vs Temperature ±15 10 ∗ ∗ ppm/°C
vs VCC ±10 ∗ ∗ ∗ ppm/V
vs Time ±1 ∗ ∗ ∗ ppm/month
Output Impedance 10 20 ∗ ∗ ∗ 15 ∗ 15 MΩ
TEMPERATURE RANGE
Specification −40 +85 ∗ ∗ ∗ ∗ ∗ ∗ °C
Operating −55 +125 ∗ ∗ −40 +85 −40 +85 °C
Storage −55 +165 ∗ ∗ −55 +125 −55 +125 °C

∗ Same as XTR101AG.
(1) See the Typical Characteristics.
(2) Span error shown is untrimmed and may be adjusted to zero.
(3) e1 and e2 are signals on the −In and +In terminals with respect to the output, pin 7. While the maximum permissible ∆e is 1V, it is primarily intended for much lower signal levels, for
instance, 10mV or 50mV full-scale for the XTR101A and XTR101B grades, respectively. 2mV FS is also possible with the B grade, but accuracy will degrade due to possible errors
in the low value span resistance and very high amplification of offset, drift, and noise.
(4) Offset voltage is trimmed with the application of a 5V common-mode voltage. Thus, the associated common-mode error is removed. See the Application Information section.

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SBOS146A − OCTOBER 1986 − REVISED AUGUST 2004

TYPICAL CHARACTERISTICS
At TA = +25°C and VCC = 24VDC, unless otherwise noted.

SPAN vs FREQUENCY STEP RESPONSE

80 25
CC = 0
RS = 25Ω RS = ∞
)
Ω

20
Transconductance (20 Log m

60

Output Current (mA)

RS = 100Ω
RS = 25Ω
15
RS = 400Ω
40
RS = 2kΩ 10

RS = ∞
20
5

0 0
100 1k 10k 100k 1M 0 200 400 600 800 1000
Frequency (Hz) Time (µs)

FULL−SCALE INPUT VOLTAGE vs RS

RS (kΩ )
COMMON−MODE REJECTION vs FREQUENCY
0 2 4 6 8 120
0.08 0.8

100

0.06 0.6
∆ eIN Full−Scale (V)

∆ eIN Full−Scale (V)

0 to 800mV and 80
CMR (dB)

0 to 8kΩscale
0.04 0.4 60

40
0.02 0.2
20
0 to 80mV (low−level signals)
and 0 to 400Ωscale
0 0 0
0 100 200 300 400 0.1 1 10 100 1k 10k 100k
RS (Ω) Frequency (Hz)

POWER−SUPPLY REJECTION vs FREQUENCY BANDWIDTH vs PHASE COMPENSATION

140 100k

120
Power−Supply Rejection (dB)

10k
RS = ∞
100
Bandwidth (Hz)

1k
80 RS = 100Ω RS = 400Ω
100
60 RS = 25Ω
10
40

1
20

0 0.1
0.1 10 100 1k 10k 100k 1M 10M 1 10 100 1k 10k 100k 1M
Frequency (Hz) Bandwidth Control, CC (pF)

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SBOS146A − OCTOBER 1986 − REVISED AUGUST 2004

TYPICAL CHARACTERISTICS (continued)

At TA = +25°C, VDD = +3.3V, and VIO = +3.3V, unless otherwise noted.

INPUT VOLTAGE NOISE DENSITY vs FREQUENCY INPUT CURRENT NOISE DENSITY vs FREQUENCY
60 6
Input Noise Voltage (nV/ Hz)

Input Noise Current (pA/ Hz)

50 5

40 4

30 3

20 2

10 1

0 0
1 10 100 1k 10k 100k 1 10 100 1k 10k 100k
Frequency (Hz) Frequency (Hz)

OUTPUT CURRENT NOISE DENSITY vs FREQUENCY

6
Output Noise Current (nA/ Hz)

0
1 10 100 1k 10k 100k
Frequency (Hz)

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SBOS146A − OCTOBER 1986 − REVISED AUGUST 2004

Examination of the transfer function shows that IO has a

THEORY OF OPERATION lower range-limit of 4mA when eIN = e2 − e1 = 0V. This 4mA
A simplified schematic of the XTR101 is shown in Figure 1. is composed of 2mA quiescent current exiting pin 7 plus
Basically, the amplifiers A1 and A2 act as a single 2mA from the current sources. The upper range limit of IO
power-supply instrumentation amplifier controlling a is set to 20mA by the proper selection of RS based on the
current source, A3 and Q1. Operation is determined by an upper range limit of eIN. Specifically, RS is chosen for a
internal feedback loop. e1 applied to pin 3 will also appear 16mA output current span for the given full-scale input
at pin 5, and similarly, e2 will appear at pin 6. Therefore, the voltage span.
current in RS (the span setting resistor) will be
IS = (e2 − e1)/RS = eIN/RS. This current combines with the For example, 0.016 ǒ amps 40 ǒ
volt
)
RS
Ǔ
e IN full−scaleǓ + 16mA.
current I3 to form I1. The circuit is configured such that I2
is 19 times I1. From this point, the derivation of the transfer Note that since IO is unipolar, e2 must be kept larger than
function is straightforward but lengthy. The result is shown e1 (that is, e2 ≥ e1 or eIN ≥ 0). Also note that in order not to
in Figure 1. exceed the output upper range limit of 20mA, eIN must be
kept less than 1V when RS = ∞ and proportionately less as
RS is reduced.

− eIN
+
RS

(e1) (e2)
5 IS 6

I3 I4

R3 R4
1.25kΩ 1.25kΩ
+VCC +VCC
+VCC D1
IB1 8
(e1) A1 A2
−In3

eIN
IB2
VPS
+In4
(e2) 100µA

IO
7

Q1 +
+VCC eL RL
+VCC 2mA −

I1 R1 A3
1kΩ

R2 52.6Ω

I2
IO
Voltage−Controlled
Current Source

10 11
IREF1 IREF2 2.5kΩ

I O + 4mA ) ǒ0.016
amps
volt
)
40
Ǔ
e e + e2 * e1
RS IN, IN

Figure 1. Simplified Schematic of the XTR101

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SBOS146A − OCTOBER 1986 − REVISED AUGUST 2004

INSTALLATION AND OPTIONAL EXTERNAL TRANSISTOR

The optional external transistor, when used, is connected
OPERATING INSTRUCTIONS in parallel with the XTR101 internal transistor. The purpose
BASIC CONNECTION is to increase accuracy by reducing heat change inside the
See Figure 1 for the basic connection of the XTR101. A XTR101 package as the output current spans from
difference voltage applied between input pins 3 and 4 will 4-20mA. Under normal operating conditions, the internal
cause a current of 4-20mA to circulate in the two-wire transistor is never completely turned off, as shown in
output loop (through RL, VPS, and D1). For applications Figure 2. This maintains frequency stability with varying
requiring moderate accuracy, the XTR101 operates very external transistor characteristics and wiring capacitance.
cost-effectively with just its internal drive transistor. For The actual current sharing between internal and external
more demanding applications (high accuracy in high gain), transistors is dependent on two factors:
an external NPN transistor can be added in parallel with
1. relative geometry of emitter areas, and
the internal one. This keeps the heat out of the XTR101
package and minimizes thermal feedback to the input 2. relative package dissipation (case size and thermal
stage. Also, in such applications where the eIN full-scale conductivity).
is small (< 50mV) and RSPAN is small (< 150Ω), caution For best results, the external device should have a larger
should be taken to consider errors from the external span base-emitter area and smaller package. It will, upon
circuit plus high amplification of offset drift and noise. turn-on, take about [0.95(IO − 3.3mA)]mA. However, it will
heat faster and take a greater share after a few seconds.

4mA 20mA
16mA
+VCC

8 (2)
750Ω 12V, 200mW

3.5mA

0.5mA
B
12 QEXT 23.6V, 377mW
(1)
XTR101 QINT 18mW 2N2222
Other Suitable Types
Type Package
9 VPS
210Ω 3.47V, 60mW 2N4922 TO−225 40V
E
1.5mA TIP29B TO−220
TIP31B TO−220
Quiescent
52.6Ω 0.95V, 17mW

I OUT
7
11
Short−Circuit RL
10 Worst−Case 250Ω

1mA 1mA 18mA

20mA
2mA

NOTES: (1) An external transistor is used in the manufacturing test circuit for testing electrical specifications.
(2) This resistor is required for the 2N2222 with VPS > 24V to limit power dissipation.

Figure 2. Power Calculation of the XTR101 with an External Transistor

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SBOS146A − OCTOBER 1986 − REVISED AUGUST 2004

Although any NPN of suitable power rating will operate MAJOR POINTS TO CONSIDER WHEN
with the XTR101, two readily available transistors are USING THE XTR101
recommended: 1. The leads to RS should be kept as short as possible
to reduce noise pick-up and parasitic resistance.
1. 2N2222 in the TO-18 package. For power-supply
voltages above 24V, a 750Ω, 1/2W resistor should be 2. +VCC should be bypassed with a 0.01µF capacitor as
connected in series with the collector. This will limit the close to the unit as possible (pin 8 to pin 7).
power dissipation to 377mW under the worst-case 3. Always keep the input voltages within their range of
conditions; see Figure 2. Thus, the 2N2222 will safely linear operation, +4V to +6V (e1 and e2 measured with
operate below its 400mW rating at the upper respect to pin 7).
temperature of +85°C. Heat sinking the 2N2222 will 4. The maximum input signal level (eINFS) is 1V with
result in greatly reduced accuracy improvement and RS = ∞ and proportionally less as RS decreases.
is not recommended.
5. Always return the current references (pins 10 and 11)
2. TIP29B in the TO-220 package. This transistor will to the output (pin 7) through an appropriate resistor. If
operate over the specified temperature and output the references are not used for biasing or excitation,
voltage range without a series collector resistor. Heat connect them together to pin 7. Each reference must
sinking the TIP29B will result in slightly less accuracy have between 0V and +(VCC − 4V) with respect to
improvement. It can be done, however, when pin 7.
mechanical constraints require it. 6. Always choose RL (including line resistance) so that
the voltage between pins 7 and 8 (+VCC) remains
within the 11.6V to 40V range as the output changes
ACCURACY WITH AND WITHOUT AN
between the 4-20mA range (as shown in Figure 4).
EXTERNAL TRANSISTOR
The XTR101 has been tested in a circuit using an external 7. It is recommended that a reverse polarity protection
transistor. The relative difference in accuracy with and diode (D1 in Figure 1) be used. This will prevent
without an external transistor is shown in Figure 3. Notice damage to the XTR101 caused by a momentary (such
that a dramatic improvement in offset voltage change with as a transient) or long-term application of the wrong
supply voltage is evident for any value of load resistor. polarity of voltage between pins 7 and 8.
8. Consider PC board layout which minimizes parasitic
capacitance, especially in high gain.

30 60
Span = ∆IO = 16mA
Self−Heating ∆ Temperature (_C)

1500
25 50
Without External Transistor
1250
VPS − 11.6V
Load Resistance, RL (Ω)

20 40
RL max =
∆VOS (µV)

20mA
RL = 100Ω 1000
15 30
RL = 600Ω 750
10 20
R L = 1kΩ
Operating
500
With External Transistor Region
5 10
RL = 600Ω RL = 1kΩ
RL = 100Ω 250
0 0
10 20 30 40
0
VCC (V) 0 10 20 30 40 50 60
Power−Supply Voltage, VPS (V)

Figure 3. Thermal Feedback Due to Change in

Output Current Figure 4. Power-Supply Operating Range

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SBOS146A − OCTOBER 1986 − REVISED AUGUST 2004

SELECTING THE RS
11 D1
RSPAN is chosen so that a given full-scale input span e1 3 10
(eINFS) will result in the desired full-scale output span of − 8
∆IOFS:
5

ƪǒ ǒ Ǔƫ De
4−20mA
−
Ǔ
RS
amps
) 40
2mA
0.016 IN + DI O + 16mA. eIN Adj. XTR101
0.01µF
volt RS + 6 + 24V +
eL
− RL −
Solving for RS: e2 7
+ 14
4 2
+ 1MΩ
RS + 40 1 IO
amps e’2
DI OńDe IN * 0.016 volt (1) 0.01µF
Offset
Adjust

For example, if ∆eINFS = 100mV for ∆IOFS = 16mA, R2

2.5kΩ I
O
+ 4mA ) ǒ 0.016
amps
volt
)
40
R
S
Ǔe IN

2mA e IN + e 2
RS + 40 + 40 +5V
ǒ16mAń100mVǓ * 0.016 0.16 * 0.016
Figure 5. Basic Connection for Floating Voltage
+ 40 + 278W Source
0.144

See the Typical Characteristics for a plot of RS vs ∆eINFS.

Note that in order not to exceed the 20mA upper range 11 D1
e1 3
− 10
limit, eIN must be less than 1V when RS = ∞ and 1mA 1mA 8
proportionately smaller as RS decreases.
5

BIASING THE INPUTS +

eIN RS XTR101
− 0.01µF
Because the XTR operates from a single supply, both e1 6 + 24V +
and e2 must be biased approximately 5V above the eL
− RL −
voltage at pin 7 to assure linear response. This is easily 4 7
+
done by using one or both current sources and an external e2 2 14
+ 1 100kΩ
resistor, R2. Figure 5 shows the simplest case—a floating Offset
e2 RT Adjust
voltage source eȀ2. The 2mA from the current sources 1MΩ
− R2
flows through the 2.5kΩ value of R2 and both e1 and e2 are 2.5kΩ
raised by the required 5V with respect to pin 7. For linear
operation the constraint is:
Alternate circuitry
2mA
+5V I
O
+ 4mA ) ǒ 0.016
amps
volt
)
40
R
S
Ǔ
e IN

+4V ≤ e1 ≤ +6V shown in Figure 8.

e IN + eȀ 2 + 1mA RT
0.01µF
+4V ≤ e2 ≤ +6V

The offset adjustment is used to remove the offset voltage

Figure 6. Basic Connection for Resistive Source
of the input amplifier. When the input differential voltage
(eIN) equals zero, adjust for 4mA output.
CMV AND CMR
The XTR101 is designed to operate with a nominal 5V
Figure 6 shows a similar connection for a resistive common-mode voltage at the input and will function
transducer. The transducer could be excited either by one properly with either input operating over the range of 4V to
(as shown) or both current sources. Also, the offset 6V with respect to pin 7. The error caused by the 5V CMV
adjustment has higher resolution compared to Figure 5. is already included in the accuracy specifications.
If the inputs are biased at some other CMV, then an input
offset error term is (CMV − 5)/CMRR, where CMR is in dB,
and CMRR is in V/V.

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SBOS146A − OCTOBER 1986 − REVISED AUGUST 2004

SIGNAL SUPPRESSION AND ELEVATION

In some applications, it is desired to have suppressed zero − −
1mA 1mA 1mA 1mA
range (input signal elevation) or elevated zero range (input eIN eIN
signal suppression). This is easily accomplished with the + +

XTR101 by using the current sources to create the

suppression/elevation voltage. The basic concept is + +
+ e’2 RT
shown in Figure 7 and Figure 8(a). In this example, the V4 R4
RT −
sensor voltage is derived from RT (a thermistor, RTD, or − e’2 +
other variable resistance element) and excited by one of − V4 R4
the 1mA current sources. The other current source is used −
to create the elevated zero range voltage. Figure 8(b), (c), 2mA 2mA
and (d) show some of the possible circuit variations. These eIN = (e’2 − V4) eIN = (e’2 + V4)
circuits have the desirable feature of noninteractive span V4 = 1mA × R4 V4 = 1mA × R4
e’2 = 1mA × RT e’2 = 1mA × RT
and suppression/elevation adjustments.
(a) Elevated Zero Range (b) Suppressed Zero Range
Note: It is not recommended to use the optional offset
voltage null (pins 1, 2, and 14) for elevation/suppression.
This trim capability is used only to null the amplifier’s input
2mA − 2mA −
offset voltage. In many applications the already low offset eIN eIN
voltage (typically 20µV) will not need to be nulled at all. + e’2 +
− +
Adjusting the offset voltage to non-zero values will disturb
the voltage drift by ±0.3µV/°C per 100µV or induced offset. +
V4 R4 +
+
− e’2 V4 R4
−
−
20
Span Adjust 2mA 2mA
eIN = (e’2 − V4) eIN = (e’2 + V4)
V4 = 2mA × R4 V4 = 2mA × R4
15
(c) Elevated Zero Range (d) Suppressed Zero Range
IO (mA)

10 Figure 8. Elevation and Suppression Circuits

Suppressed
Elevated
Zero
5
Zero
Range
Range APPLICATION INFORMATION
The small size, low offset voltage and drift, excellent
linearity, and internal precision current sources make the
0
XTR101 ideal for a variety of two-wire transmitter
−0+
applications. It can be used by OEMs producing different
eIN (V)
types of transducer transmitter modules and by data
acquisition systems manufacturers who gather transducer
data. Current-mode transmission greatly reduces noise
Figure 7. Elevation and Suppression Graph interference. The two-wire nature of the device allows
economical signal conditioning at the transducer. Thus the
XTR101 is, in general, very suitable for individualized and
special-purpose applications.

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SBOS146A − OCTOBER 1986 − REVISED AUGUST 2004

EXAMPLE 1
An RTD transducer is shown in Figure 9. e1 D1
11
3 10
Given a process with temperature limits of +25°C and −
8
+150°C, configure the XTR101 to measure the
5
temperature with a platinum RTD which produces 100Ω at
−
0°C and 200Ω at +266°C (obtained from standard RTD eIN RS
XTR101
tables). Transmit 4mA for +25°C and 20mA for +150°C. + 0.01µF
6 + 24V +
eL
COMPUTING RS: − RL −
+ 4 7
The sensitivity of the RTD is ∆R/∆T = 100Ω/266°C. When V4 R4 e2
+
excited with a 1mA current source for a 25°C to 150°C − +
range (a 125°C span), the span of eIN is e’2 RT
−
1mA × (100Ω/266°C) × 125°C = 47mV = ∆eIN.
R2

From Equation 1, R S + 40
amps
DI OńDe IN * 0.016 volt
0.01µF
RS + 40 + 40 + 123.3W
16mAń47mV * 0.016AńV 0.3244
Figure 9. Circuit for Example 1
Span adjustment (calibration) is accomplished by
trimming RS. EXAMPLE 2
COMPUTING R4: A thermocouple transducer is shown in Figure 10.
Given a process with temperature (T1) limits of 0°C and
At ) 25 oC, eȀ 2 + 1mA(RT ) DRT)
+1000°C, configure the XTR101 to measure the
ƪ
+ 1mA 100W ) 100W
266 oC
25 oC ƫ temperature with a type J thermocouple that produces a
58mV change for 1000°C change. Use a semiconductor
+ 1mA(109.4W) + 109.4mV diode for cold junction compensation to make the
measurement relative to 0°C. This is accomplished by
In order to make the lower range limit of 25°C correspond supplying a compensating voltage (VR6) equal to that
to the output lower range limit of 4mA, the input circuitry normally produced by the thermocouple with its cold
shown in Figure 9 is used. junction (T2) at ambient. At a typical ambient of +25°C, this
eIN, the XTR101 differential input, is made 0 at 25°C or: is 1.28mV (obtained from standard thermocouple tables
with reference junction of 0°C). Transmit 4mA for T1 = 0°C
eȀ 2 25 oC * V4 and 20mA for T1 = +1000°C. Note: eIN = e2 − e1 indicates
thus, V 4 + eȀ 2 + 109.4mV that T1 is relative to T2.
25 oC

V4
R4 + + 109.4mV + 109.4W
1mA 1mA
1mA 1mA
R5
COMPUTING R2 AND CHECKING CMV: 2kΩ 11
3 10
−
At ) 25 C, eȀ 2 + 109.4mV
o
D 8
At ) 150 oC, eȀ 2 + 1mA(RT ) DRT) R6

ƪ
+ 1mA 100W ) 100W
266 oC
150 oC ƫ +
e1
−
51Ω
eIN XTR101

+ 156.4mV Thermocouple
TTC
4 7
Since both eȀ2 and V4 are small relative to the desired 5V +
+
common-mode voltage, they may be ignored in computing VTC 0.01µF
+ V4 − e2
R2 as long as the CMV is met. −
R4 2.5kΩ
R 2 + 5V + 2.5kW
Temperature T1
Temperature T2 = TD

ǁ
2mA
e 2 min + 5V ) 0.1094V
e 2 max + 5V ) 0.1564V The 4V to 6V CMV
Figure 10. Thermocouple Input Circuit with Two
requirement is met.
e 1 + 5V ) 0.1094V Temperature Regions and Diode (D) Cold
Junction Compensation
11
"#$#
www.ti.com
SBOS146A − OCTOBER 1986 − REVISED AUGUST 2004

ESTABLISHING RS: R5 is chosen as 2kΩ to be much larger than the resistance

of the diode. Solving for R6 yields 51Ω.
The input full-scale span is 58mV (∆eINFS = 58mV).
RS is found from Equation 1.

RS + 40
amps 1mA
DI OńDe IN * 0.016 volt
+ 40 + 40 + 153.9W
16mAń58mV * 0.016AńV 0.2599 +
R5 V5
+ −
SELECTING R4:
VD D
R4 is chosen to make the output 4mA at TTC = 0°C − +
(VTC = −1.28mV) and TD = +25°C (VD = 0.6V); see R6 V6
Figure 10. −

VTC will be −1.28mV when TTC = 0°C and the reference

junction is at +25°C. e1 must be computed for the condition
of TD = +25°C to make eIN = 0V.
V D 25oC + 600mV
Figure 11. Cold Junction Compensation Circuit
ǒ Ǔ
e 1 25oC + 600mV 51 + 14.9mV
2051 THERMOCOUPLE BURN-OUT INDICATION
e IN + e2 * e1 + V TC ) V4 * e1
In process control applications it is desirable to detect
With eIN = 0 and VTC = −1.28mV, when a thermocouple has burned out. This is typically
done by forcing the two-wire transmitter current to either
V 4 + e1 ) eIN * VTC limit when the thermocouple impedance goes very high.
+ 14.9mV ) 0V * (* 1.28mV) The circuits of Figure 16 and Figure 17 inherently have
1mA(R 4) + 16.18mV downscale indication. When the impedance of the
R 4 + 16.18W thermocouple gets very large (open) the bias current
flowing into the + input (large impedance) will cause IO to
go to its lower range limit value (about 3.8mA). If upscale
COLD JUNCTION COMPENSATION:
indication is desired, the circuit of Figure 18 should be
A temperature reference circuit is shown in Figure 11. used. When TC opens, the output will go to its upper range
limit value (about 25mA or higher).
The diode voltage has the form:
I DIODE
V D + KT
q ln
OPTIONAL INPUT OFFSET VOLTAGE TRIM
I SAT
The XTR101 has provisions for nulling the input offset
Typically at T2 = +25°C, VD = 0.6V and ∆VD/∆T = −2mV/°C. voltage associated with the input amplifiers. In many
R5 and R6 form a voltage divider for the diode voltage VD. applications the already low offset voltages (30µV max for
The divider values are selected so that the gradient the B grade and 60µV max for the A grade) will not need
∆VD/∆T equals the gradient of the thermocouple at the to be nulled at all. The null adjustment can be done with a
reference temperature. At +25°C this is approximately potentiometer at pins 1, 2, and 14; see Figure 5 and
52µV/°C (obtained from a standard thermocouple table); Figure 6. Either of these two circuits may be used.
therefore, NOTE: It is not recommended to use this input offset

ǒ Ǔ
voltage nulling capability for elevation or suppression. See
DT C DVD R6 the Signal Suppression and Elevation section for the
+
DT DT R 5 ) R 6 proper techniques.
52mV
°C
+
2000mV
°C
R6
ǒ
R5 ) R6
Ǔ
(2)

12
 "#$#
www.ti.com
SBOS146A − OCTOBER 1986 − REVISED AUGUST 2004

OPTIONAL BANDWIDTH CONTROL 0.0047µF

1mA
Low-pass filtering is recommended where possible and R3(1) 11
can be done by either one of two techniques; see 3
−
Figure 12. C2 connected to pins 3 and 4 will reduce the
1mA
bandwidth with a cutoff frequency given by:

f CO + 15.9 C2 XTR101
(R1 ) R2 ) R3 ) R 4)(C2 ) 3pF)
R1
This method has the disadvantage of having fCO vary with R4(1)
4 13
R1, R2, R3, R4, and it may require large values of R3 and +
R4. The other method, using C1, will use smaller values of R2
12 C1
capacitance and is not a function of the input resistors. It
is, however, more subject to nonlinear distortion caused by
slew rate limiting. This is normally not a problem with the NOTE: (1) R3 and R 4 should be equal if used.
slow signals associated with most process control 2
Internally eNOISE RTI = e2INPUT STAGE + e2OUTPUT STAGE
transducers. The relationship between C1 and fCO is
Gain
shown in the Typical Characteristics.
Figure 12. Optional Filtering

APPLICATION CIRCUITS
Voltage
Reference
MC1403A
+

VR = 2.5V
−

100pF
XTR101
V+
IO
OPA27
(4−20 mA)
V−
R1 R2
125Ω 500Ω

IOȀ (0−20mA)

ǒ R1
NOTE: I OȀ + 1 ) R
2
Ǔ V
I O * R + 1.25 I O * 5mA
R2

Other conversions are readily achievable by

changing the reference and ratio of R1 to R2.

Figure 13. 0-20mA Output Converter

13
"#$#
www.ti.com
SBOS146A − OCTOBER 1986 − REVISED AUGUST 2004

2mA
0.9852mA 1.0147mA
1.8kΩ
−

R R
LM129
6.9V
Voltage 300Ω RS XTR101
Ref

R R

0.01µF 4.7kΩ

Figure 14. Bridge Input, Voltage Excitation

1mA This circuit has downscale

2mA 1mA
R R burn−out indication.
2kΩ
−
300Ω − Type J
− +
R R
51Ω RS
20Ω XTR101
RS XTR101

J
+
+ Zero
2.2kΩ Adjust
2.5kΩ

Figure 15. Bridge Input, Current Excitiation Figure 17. Thermocouple Input with Diode Cold
Junction Compensation

1mA
1mA This circuit has downscale 1mA This circuit has upscale
1mA
burn−out indication. burn−out indication.
+ − −
−
Type J

− +
RS 20Ω RS
RTD 20Ω
XTR101 RTD XTR101
100Ω
15Ω Zero 15Ω 100Ω Zero
Adjust Adjust

+ +
2.5kΩ 2.5kΩ

Figure 16. Thermocouple Input with RTD Cold Figure 18. Thermocouple Input with RTD Cold
Junction Compensation Junction Compensation

14
 "#$#
www.ti.com
SBOS146A − OCTOBER 1986 − REVISED AUGUST 2004

11 I1 I2
10
+VCC 8 +VCC
−
3
OPA21
VREF
Out

R1 R2
15V 0.01µF XTR101

4
+
7
2.5kΩ

VREF = ImA R2

Figure 19. Dual Precision Current Sources Operated from One Supply

Isolation
Barrier
+15V
+V2 P+
− C2 1kΩ
8 V+ 1µF
−V2 722
E
1µF
4−20 mA C1 +V1 −V1 V−
+
∆eIN XTR101 30V +15V
−

7 1MΩ
+ + 10
12 1MΩ −15V
15

7 2
4 3
250Ω ISO100
VOUT(1)
9 +1V to +5V
8

IREF2
17
− 16
18 NOTE: (1) Can be shifted and amplified
using ISO100 current sources.
IREF1

Figure 20. Isolated Two-Wire Current Loop

15
"#$#
www.ti.com
SBOS146A − OCTOBER 1986 − REVISED AUGUST 2004

DETAILED ERROR ANALYSIS EXAMPLE 3

The ideal output current is: See the circuit in Figure 9 with the XTR101BG
specifications and the following conditions: RT = 109.4Ω at
I O IDEAL + 4mA ) K e IN (3) 25°C, RT = 156.4Ω at 150°C, IO = 4mA at 25°C, IO = 20mA
at 150°C, RS = 123.3Ω, R4 = 109Ω, RL = 250Ω,

where K is the span (gain) term, 0.016 ǒ amps

volt
) 40
RS
ǒ ǓǓ RLINE = 100Ω, VDI = 0.6V, and VPS = 24V ± 0.5%.
Determine the % error at the upper and lower range
values.
In the XTR101 there are three major components of error: A. AT THE LOWER RANGE VALUE (T = +255C)
1. σO = errors associated with the output stage. s O + I OS RTO +" 6mA

2. σS = errors associated with span adjustment. DVCC ȱƪ e )e ƫ

1 2
* 5V ȳ
σI = errors associated with the input stage. s I + V OSI ) ǒI BI DR ) I OSI R4Ǔ ) ȧ
) 2
ȧ
Ȳ ȴ
3. PSRR CMRR
The transfer function including these errors is:
DR + RT 25oC * R4 + 109.4 * 109 [ 0
I O ACTUAL + ǒ4mA ) s OǓ ) Kǒ1 ) sSǓ(e IN ) s I) (4) DVCC + (24 0.005) ) 4mA(250W ) 100W) ) 0.6V
+ 120mV ) 1400mV ) 600mV + 2120mV
When this expression is expanded, second-order terms
(σS, σI) dropped, and terms collected, the result is: e 1 + ǒ2mA 2.5kWǓ ) ǒ1mA 109WǓ
+ 5.109V
IO ACTUAL + ǒ4mA ) s OǓ ) K e IN ) Ks I ) Ks S e IN (5) e 2 + ǒ2mA 2.5kWǓ ) ǒ1mA 109.4WǓ
The error in the output current is IO ACTUAL − IO IDEAL and + 5.1094V
can be found by subtracting Equation 3 from Equation 5. ǒe 1 ) e 2Ǔ
* 5V + 0.1092V
2
I O ERROR + sO ) KsI ) KsS e IN (6)
PSRR + 3.16 105 for 110dB
This is a general error expression. The composition of CMRR + 31.6 10 3 for 90dB
each component of error depends on the circuitry inside
the XTR101 and the particular circuit in which it is applied. s 1 + 30mV ) (150nA 0 ) 20nA 109W) )
The circuit of Figure 9 will be used to illustrate the 2120mV ) 0.1092V (10)
principles. 3.16 10 5 3.16 10 3
s O + I OS RTO + 30mV ) 2.18mV ) 6.7mV ) 3.46mV
(7)
+ 42.34mV
s S + eNONLINEARITY ) eSPAN (8)
s S + eNONLIN ) eSPAN
ǒe1)e2Ǔ
DVCC * 5V + 0.0001 ) 0 ǒassumes trim of R SǓ
sI + VOSI ) ǒIB1 ) R4 * IB2 R TǓ ) ) 2
PSRR CMRR (9) I O ERROR + sO ) K sI ) K sS e IN
The term in parentheses may be written in terms of offset K + 0.016 ) 40 + 0.016 ) 40
RS 123.3W
current and resistor mismatches as IB1 ∆R + IOSȀ R4.
amps
+ 0.340
VOSI(1) = input offset voltage. volts
IB1(1), IB2(1) = input bias current. e IN + e2 * V4 + I REF1 R T 25oC * I REF2 R4
IOSI(1) = input offset current. Since RT 25°C = R4:
IOS RTO (1) = output offset current error. e IN + ǒI REF1 * IREF2Ǔ R 4 + 0.4mA 109W
∆R = RT − R4 = mismatch in resistor. + 43.6mV
∆VCC = change supply voltage between pins 7 and 8 Since the maximum mismatch of the current references is
away from 24V nominal. 0.04% of 1mA = 0.4µA:
PSRR (1) = power-supply rejection ratio. I O error + 6mA ) ǒ0.34AńV 42.34mVǓ )
CMRR (1) = common-mode rejection ratio. ǒ0.34AńV
0.0001 43.6mVǓ
εNONLIN (1) = span nonlinearity. + 6mA ) 14.40mA ) 0.0015mA + 20.40mA
εSPAN(1) = span equation error. 20.40mA
% error + 100%
Untrimmed error = 5% max. May be trimmed to zero. 16mA
(1) These items can be found in the Electrical Characteristics. 0.13% of span at lower range value.

16
 "#$#
www.ti.com
SBOS146A − OCTOBER 1986 − REVISED AUGUST 2004

B. AT THE UPPER RANGE VALUE (T = +150°C) CONCLUSIONS

DR + R T 150oC * R 4 + 156.4 * 109.4 + 47W Lower Range: From Equation 10, it is observed that the
DV CC + ǒ24 0.005Ǔ ) 20mAǒ250W ) 100WǓ ) 0.6V predominant error term is the input offset voltage (30µV for
+ 7720mV the B grade). This is of little consequence in many
applications. VOS RTI can, however, be nulled using the
e 1 + 5.109V plots shown in Figure 5 and Figure 6. The result is an error
of 0.06% of span instead of 0.13% of span.
e 2 + ǒ2mA 2.5kWǓ ) ǒ1mA 156.4WǓ
+ 5.156V Upper Range: From Equation 11, the predominant errors
ǒe 1 * e 2Ǔ are IOS RTO (6µA), VOS RTI (30µV), and IB (150nA), max,
* 5V + 0.1325V B grade. Both IOS and VOS can be trimmed to zero;
2
however, the result is an error of 0.09% of span instead of
0.19% of span.
s O + 6mA
s 1 + 30mV ) ǒ150nA 47W ) 20nA 190WǓ )
RECOMMENDED HANDLING PROCEDURES
7720mV ) 0.1325V FOR INTEGRATED CIRCUITS
3.16 105 3.16 10 3
+ 30mV ) 9.23mV ) 24mV ) 4.19mV All semiconductor devices are vulnerable, in varying
degrees, to damage from the discharge of electrostatic
+ 67.42mV
energy. Such damage can cause performance
s S + 0.0001
degradation or failure, either immediate or latent. As a
e IN + eȀ 2 * V 4 + IREF1 R T 150oC * IREF2 R 4 general practice, we recommend the following handling
+ ǒ1mA 156.4WǓ * ǒ1mA 109WǓ procedures to reduce the risk of electrostatic damage:
+ 47mV 1. Remove the static-generating materials (such as
untreated plastic) from all areas that handle
I O error + sO ) K s I ) K s S eIN (11) microcircuits.
+ 6mA ) ǒ0.34AńV 67.42mVǓ ) 2. Ground all operators, equipment, and work stations.
ǒ0.34AńV 0.0001 47000mVǓ 3. Transport and ship microcircuits, or products
+ 6mA ) 22.92mA ) 1.60mA incorporating microcircuits, in static-free, shielded
containers.
+ 30.52mA
4. Connect together all leads of each device by means
30.52mA
% error + 100% of a conductive material when the device is not
16mA connected into a circuit.
0.19% of span at upper range value. 5. Control relative humidity to as high a value as practical
(50% recommended).

17
 PACKAGE OPTION ADDENDUM
www.ti.com 9-Oct-2007

PACKAGING INFORMATION

Orderable Device Status (1) Package Package Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
Type Drawing Qty
XTR101AG NRND CDIP SB JD 14 27 Green (RoHS & Call TI N / A for Pkg Type
no Sb/Br)
XTR101AP ACTIVE PDIP N 14 25 Green (RoHS & CU NIPDAU N / A for Pkg Type
no Sb/Br)
XTR101APG4 ACTIVE PDIP N 14 25 Green (RoHS & CU NIPDAU N / A for Pkg Type
no Sb/Br)
XTR101AU ACTIVE SOIC DW 16 48 Green (RoHS & CU NIPDAU Level-3-260C-168 HR
no Sb/Br)
XTR101AU/1K ACTIVE SOIC DW 16 1000 Green (RoHS & CU NIPDAU Level-3-260C-168 HR
no Sb/Br)
XTR101AU/1KG4 ACTIVE SOIC DW 16 1000 Green (RoHS & CU NIPDAU Level-3-260C-168 HR
no Sb/Br)
XTR101AUG4 ACTIVE SOIC DW 16 48 Green (RoHS & CU NIPDAU Level-3-260C-168 HR
no Sb/Br)
XTR101BG NRND CDIP SB JD 14 27 Green (RoHS & Call TI N / A for Pkg Type
no Sb/Br)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.

(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)

(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.

Addendum-Page 1
 PACKAGE MATERIALS INFORMATION
www.ti.com 11-Mar-2008

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device Package Package Pins SPQ Reel Reel A0 (mm) B0 (mm) K0 (mm) P1 W Pin1
Type Drawing Diameter Width (mm) (mm) Quadrant
(mm) W1 (mm)
XTR101AU/1K SOIC DW 16 1000 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1

Pack Materials-Page 1
 PACKAGE MATERIALS INFORMATION
www.ti.com 11-Mar-2008

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
XTR101AU/1K SOIC DW 16 1000 375.0 340.0 57.0

Pack Materials-Page 2
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