Dspring 1588239258000

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LN3C50 Rev:B

AC/DC

u 65kHz PWM
u
u C.T.TM EMI
u


u DoE LEVEL VI CoC V5 LN3C50


u 50mW
u OCP

to
u OLP VDD
u VDD (UVLO) UVLO
TM
u TrueOVP
u l ACUVP
ia
u (ACUVP) 15V MOSFET
nt

u (OCP) smartEnergyTM
u (OLP)
de

u TM
(TrueOVP ) CoC V5 DoE LEVEL VI 6
50mW .
fi

C.T.TM
on

² EMI
ic

²
² SOT23-6 DIP-8
em

²
is
Li

LN3C50 PWM
40W
CoC V5 DoE LEVEL VI 6
PWM

65kHz. IC

VDD
LN3C50 Ú·¹ïò øз² ·- ÍÑÌîíóê÷

Copyright(C) 2013 Lii Semiconductor -1- www.liisemi.com


LN3C50



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Ú·¹íò

DIP8 SOT23-6
1 6 GATE MOSFET
2 5 VDD IC
3 / NC
4 4 CS
5 3 BIO OVP UVP
6 / NC
7 2 VFB
8 1 GND

Copyright(C) 2013 Lii Semiconductor -2- www.liisemi.com


LN3C50
*

**
VDD 30 V
VFB -0.3 to +7 V
CS -0.3 to +7 V
BIO -0.3 to +7 V
Min/Max TJ -20 to 150
Min/Max Tstg -55 to 160
R j-a 90/350*** /W


HBM 3.0 KV


MM 300 V

to
Note*: Stresses beyond those listed under absolute maximum ratings may cause permanent damage
to the device. These are stress ratings only, functional operation of the device at these or any other
conditions beyond those indicated under recommended operating conditions is not implied. Exposure
l
to absolute maximum-rated conditions for ex tended periods may affect device reliability.** with 10mA
ia
limit. ***:90 for DIP8 350 for SOT23-6.
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VDD VDD 10 25 V
on

TA -20 85
ic
em

Ta=25
is
Li

IQS VDD VDD=14V - 1 10 uA

IQ VDD=16V, VFB=OPEN - 1.2 - mA

VSTOP 7.8 8.8 9.8 V


UVLO FB=0
VSTART - 15 - V

VOVP VDD - 27.5 - V

VDD_CL VDD IVDD=10mA - 30 - V

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LN3C50
AVCS PWM VFB / Vcs 2.0 V/V
VFB VFB VFB 4.4 V
IFB_S FB FB=0 0.30 mA
VTHMIN VDD = 16V 0.75 V
VTHMAX VDD = 16V 3.7 V
TOLPI VDD = 16V 85 mS
DMAX VDD=16V,FB=3.3V,CS=0 80 %


TLEB 250 nS


ZCS CS 40 K

to
TOCP OCP VDD=16V,CS>VTH_OC,FB=3.3V 75 nS
VTHOCP OCP FB=3.3V 0.75 V
TSS 4 mS
VTHOSP l 1.45 V
ia
nt

FOSC 60 65 70 kHz
de

FOSC_T VDD = 16V,Ta=-20 to 100 5 %


FOSC_V VDD = 12-25V 5 %
fi

FOSC_min Burst Mode VDD = 16V 22 kHz


on
ic

VOL VDD = 16V, Io = -20 mA 0.8 V


VOH VDD = 16V, Io = 20 mA 10 V
em

VO_CL 12.5 V
is

T_r VDD = 16V, CL = 1nF 400 nS


T_f VDD = 16V, CL = 1nF 70 nS
Li

FOSC C.T. range 4 %


TCT C.T. time 4 mS

IBIO BIO VDD = 16V 0.30 mA


VOVP VDD = 16V 3.0 V
TOVP VDD = 16V 3 us
VUVP VDD = 16V 3.0 V
TUVP VDD = 16V 65 ms

Copyright(C) 2013 Lii Semiconductor -4- www.liisemi.com


LN3C50
LN3C50 PWM IC
40W MOSFET LN3C50 FB
Burstmode
CoC FB
V5 DoE LEVEL VI 6
22kHz


22KHz FB
LN3C50


UVLO

to
3M 1/8
W LN3C50

l IC
ia
1206 IC
MOSFET
nt

VDD
de

PWM FB
fi

FB
LN3C50 1.2mA 0.75V
on

IC 10uF
IC
ic

MOSFET IC
(ESR)
em

MOSFET CCM
is

MOSFET
Li

LN3C50
CycleturningTM LN3C50 MOSFET

MOSFET
EMI LN3C50

EMI
EMI
15V
MOSFET VDD
MOSFET

Copyright(C) 2013 Lii Semiconductor -5- www.liisemi.com


LN3C50
TM
TrueOVP BIO
LN3C50

OCP OLP VDD


UVLO
BIO


FB VDD


TD_PL , MOSFET
VDD UVLO UVLO

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8 5
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LN3C50
YY: , 01-99à2001-2099
LN3C50
on

WW: , 01-52 Week


YYWWZ
Z:
ic
em

1 4
is

6 4
Li

LN3C50
LN3C50 YY: , 01-99à2001-2099
YYWWZ WW: , 01-52 Week
1 3 Z:

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LN3C50



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Copyright(C) 2013 Lii Semiconductor -7- www.liisemi.com


LN3C50



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Copyright(C) 2013 Lii Semiconductor -8- www.liisemi.com


LN3C50



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Copyright(C) 2013 Lii Semiconductor -9- www.liisemi.com


LN3C50
Marking
LN3C50D LN3C50 90 /W DIP8 50PCS/TUBE
LN3C50M LN3C50 350 /W SOT23-6 3000PCS/REEL



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Copyright(C) 2013 Lii Semiconductor -10- www.liisemi.com

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