BD93F59MWV
BD93F59MWV
BD93F59MWV
37
32
33
34
35
31
DSCHG
VB
S1_DRV
S1_SRC
S2_DRV
S2_SRC
VS
VSVR 39
CVIO
1.0 μF
VDDIO
9 VCONNIN VDDIO 20
7 RGPIO10 RGPIO11
XCLPOFF1
3.3 kΩ 3.3 kΩ
8 18
CC1 CC1 GPIO10
19
GPIO11
USB CC2 10
CC2 BD93F59MWV GPIO0 21
(open)
Type-C PD 22
GPIO1 (open)
Receptacle
11 23
XCLPOFF2 (Package: UQFN040V5050) GPIO2 (open)
24
1.0 μF
GPIO3 PLUGDET
25
GPIO4 USBHDET
26
U1 GPIO5 (open)
27
5 ADVREF GPIO6 (open)
28
RTHU GPIO7 (open)
29
22 kΩ GPIO8 (open)
14 30
ADCIN GPIO9 (open)
15 40
IDSEL XRST
RTHD
CRST
10 pF
t° 16
D+/D- ATST1
LDO38
LDO15
ATST2
VCCIN
RX1+/RX1- USB
GND
GND
GND
CSN
CSP
RX2+/RX2- PHY
TX1+/TX1-
RIDD RAT1
3
17
38
13
12
(open)
(open)
TX2+/TX2-
CVCC CV15
100 kΩ 100 kΩ
4.7 μF 1.0 μF
RS 10 mΩ
GND GND
〇Product structure : Silicon integrated circuit 〇This product has no designed protection against radioactive rays.
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Contents
General Description ........................................................................................................................................................................ 1
Features.......................................................................................................................................................................................... 1
Key Specifications .......................................................................................................................................................................... 1
FW Revision ................................................................................................................................................................................... 1
Applications .................................................................................................................................................................................... 1
Package .......................................................................................................................................................................................... 1
Typical Application Circuits ............................................................................................................................................................. 1
Contents ......................................................................................................................................................................................... 2
Pin Configuration ............................................................................................................................................................................ 3
Pin Description................................................................................................................................................................................ 4
Block Diagram ................................................................................................................................................................................ 5
Description of Block ........................................................................................................................................................................ 6
Absolute Maximum Ratings ............................................................................................................................................................ 7
Thermal Resistance ........................................................................................................................................................................ 7
Recommended Operating Conditions ............................................................................................................................................. 8
Internal Memory Cell Characteristic ................................................................................................................................................ 8
Electrical Characteristic .................................................................................................................................................................. 8
Timing Chart ................................................................................................................................................................................. 10
I/O Equivalence Circuits................................................................................................................................................................ 12
Operational Notes ......................................................................................................................................................................... 14
1. Reverse Connection of Power Supply ............................................................................................................................ 14
2. Power Supply Lines ........................................................................................................................................................ 14
3. Ground Voltage............................................................................................................................................................... 14
4. Ground Wiring Pattern .................................................................................................................................................... 14
5. Recommended Operating Conditions............................................................................................................................. 14
6. Inrush Current................................................................................................................................................................. 14
7. Testing on Application Boards ........................................................................................................................................ 14
8. Inter-pin Short and Mounting Errors ............................................................................................................................... 14
9. Unused Input Pins .......................................................................................................................................................... 14
10. Regarding the Input Pin of the IC ................................................................................................................................... 15
11. Ceramic Capacitor .......................................................................................................................................................... 15
12. Thermal Shutdown Circuit (TSD) .................................................................................................................................... 15
13. Over Current Protection Circuit (OCP) ........................................................................................................................... 15
Ordering Information ..................................................................................................................................................................... 16
Marking Diagram .......................................................................................................................................................................... 16
Physical Dimension and Packing Information ............................................................................................................................... 17
Revision History ............................................................................................................................................................................ 18
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Pin Configuration
(TOP VIEW)
GPIO9
GPIO8
GPIO7
GPIO6
GPIO5
GPIO4
GPIO3
GPIO2
GPIO1
GPIO0
30 29 28 27 26 25 24 23 22 21
VS 31 20 VDDIO
S1_DRV 32 19 GPIO11
S1_SRC 33 18 GPIO10
S2_DRV 34 17 GND
S2_SRC 35 16 ATST1
DISCHG 36 15 IDSEL
VB 37 14 ADCIN
GND 38 13 CSP
EXP-PAD
VSVR 39 12 CSN
Pin 1 mark
XRST 40 11 XCLPOFF2
1 2 3 4 5 6 7 8 9 10
LDO38
VCCIN
GND
LDO15
ADCVREF
ATST2
XCLPOFF1
CC1
VCONNIN
CC2
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Pin Description
Pin No. Pin Name Function
1 LDO38 Internal LDO 3.8 V
2 VCCIN Internal power supply (for internal use only)
3 GND Ground
4 LDO15 Internal LDO 1.5 V
5 ADCVREF Reference voltage for ADC
6 ATST2 Analog test pin (open)
7 XCLPOFF1 Disable clamper of CC1 L: Dead-battery not support, Open: Dead-battery support
8 CC1 Configuration channel 1 for Type-C
9 VCONNIN Input power for VCONN
10 CC2 Configuration channel 2 for Type-C
11 XCLPOFF2 Disable clamper of CC2 L: Dead-battery not support, Open: Dead-battery support
12 CSN Current sensing negative input
13 CSP Current sensing positive input
14 ADCIN Input voltage to ADC
15 IDSEL Internal use
16 ATST1 Analog test pin
17 GND Ground
18 GPIO10 GPIO
19 GPIO11 GPIO
20 VDDIO GPIO H level voltage input
21 GPIO0 GPIO
22 GPIO1 GPIO
23 GPIO2 GPIO
24 GPIO3 GPIO
25 GPIO4 GPIO
26 GPIO5 GPIO
27 GPIO6 GPIO
28 GPIO7 GPIO
29 GPIO8 GPIO
30 GPIO9 GPIO
31 VS Source voltage monitor input
32 S1_DRV Power path FET gate control
33 S1_SRC Power path FET BG/SRC voltage
34 S2_DRV Power path FET gate control
35 S2_SRC Power path FET BG/SRC voltage
36 DISCHG Discharge NMOS drain (Max 28 V)
37 VB Power supply from VBUS
38 GND Ground
39 VSVR Power supply from 3.3 V / 5 V system voltage rail
40 XRST System reset signal input
EXP-PAD connects with substrate of IC. On the board, this PAD shall be shorted to
- EXP-PAD
Ground or be open condition.
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Block Diagram
GPIO0
GPIO9
GPIO8
GPIO7
GPIO6
GPIO5
GPIO4
GPIO3
GPIO2
GPIO1
VS GPIOs VDDIO
S1_DRV GPIO11
S2_DRV GND
Device Policy Manager
S2_SRC POWCNT Protocol Layer ATST1
Policy Engine
DSCHG IDSEL
ADC
VB ADCIN
GND CSP
VSVR CSN
VREF BB_PHY CC_PHY
XRST XCLPOFF2
LDO38
VCCIN
LDO15
ADCVREF
ATST2
XCLPOFF1
CC1
VCONNIN
CC2
GND
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Description of Block
(VREF)
VREF block is an internal power source circuit of this LSI with the UVLO (Under Voltage Lock Out) function.
The main power input is the VSVR pin. It generates the VCCIN pin and the LDO15 pin for internal circuits.
(OSC)
OSC block is a reference clock circuit of this LSI. This LSI does not need another external clock source.
(CC_PHY)
CC_PHY is a physical layer of USB Type-C. It supports the following function
Pull-up Current Source (for USB 3.0 A)
VBUS Detecting
(BB_PHY)
BB_PHY is a physical layer of USB Power Delivery. By control from Protocol Layer, it performs coding, decoding and
judgment of CRC and communicates with Base Band PD signal.
(POWCONT)
POWCONT block is power path control circuit of VBUS. It has two gate drivers for N-ch MOSFET switch, high withstand
discharge switch for VBUS and over voltage protection (OVP).
(ADC)
ADC block is a general-purpose ADC. It is used for the monitoring of various operating states. Monitoring object is external
input voltage for thermistor circuit, VBUS voltage, system voltage, die temperature and source current
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Thermal Resistance(Note 1)
Thermal Resistance (Typ)
Parameter Symbol Unit
1s(Note 3) 2s2p(Note 4)
UQFN040V5050
Junction to Ambient θJA 113.6 24.5 °C/W
Junction to Top Characterization Parameter(Note 2) ΨJT 8 3 °C/W
(Note 1) Based on JESD51-2A (Still-Air).
(Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside
surface of the component package.
(Note 3) Using a PCB board based on JESD51-3.
(Note 4) Using a PCB board based on JESD51-5, 7.
Layer Number of
Material Board Size
Measurement Board
Single FR-4 114.3 mm x 76.2 mm x 1.57 mmt
Top
Copper Pattern Thickness
Footprints and Traces 70 μm
Layer Number of Thermal Via(Note 5)
Material Board Size
Measurement Board Pitch Diameter
4 Layers FR-4 114.3 mm x 76.2 mm x 1.6 mmt 1.20 mm Φ0.30 mm
Top 2 Internal Layers Bottom
Copper Pattern Thickness Copper Pattern Thickness Copper Pattern Thickness
Footprints and Traces 70 μm 74.2 mm x 74.2 mm 35 μm 74.2 mm x 74.2 mm 70 μm
(Note 5) This thermal via connects with the copper pattern of all layers.
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Internal Memory Cell Characteristic (Unless otherwise specified VSVR = VDDIO = 3.3 V, VB = 5.0 V )
Parameter Min Typ Max Unit Conditions
Data Rewriting Number(Note 6) 100 - - time Ta = -30 °C to +85 °C
Data Retention Life(Note 7) 20 - - year Ta = -30 °C to +85 °C
(Note 6) BD93F59MWV cannot rewrite FW. ROHM cannot guarantee if FW is rewriting.
(Note 7) Not 100% Tested
Electrical Characteristic (Unless otherwise specified VSVR = VDDIO = 3.3 V, VB = 5.0 V, Ta = 25 °C)
Parameter Symbol Min Typ Max Unit Conditions
Current Consumption
XRST = “L”
Shutdown Current ISD - 30 70 μA
VSVR Current
USB-C Un-Attached
Stop Current ISP - 150 - μA VSVR Current
The option function stops.
USB-C Attached, PD Standby
Standby Current IST - 2 - mA
VSVR Current
VREF
VCCIN Voltage VCCIN - 3.3 - V Standby
LDO15 Output Voltage V15D - 1.5 - V Standby
VSVR UVLO release VSuvlo - - 3.10 V
VB UVLO release Vbuvlo - - 3.67 V
Digital DC Characteristics (GPIOx: x = 2 to 7)
0.8 x VDDIO+
Input “H” Voltage 1 VIH1 - V
VDDIO 0.3
0.2 x
Input “L” Voltage 1 VIL1 -0.3 - V
VDDIO
Input Leak Current 1 IIL1 -5 0 +5 μA
0.85 x
Output “H” Voltage 1 VOH1 - - V IL = +1 mA
VDDIO
Output “L” Voltage 1 VOL1 - - 0.3 V IL = -1 mA
CC_PHY
Pull-Up Current for 3.0 A Mode IIP1 304 330 356 μA
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Timing Chart
(Normal Wakeup)
3.3 V
VSVR
0V
5V
VB
0V
t1
VDDIO
0V
VCONNIN
0V
LDO38
(Internal) 0V
1.5 V
LDO15
(Internal) 0V
CC1 or CC2
Hi-Z Pull Up Enable
(Pull Up)
t2
According to USB Type-C Specification
(Ta = 25 °C)
Parameter Symbol Min Typ Max Unit Conditions
VDDIO Input Timing from VSVR
t1 0 - - ms
Input
LSI Wakeup Time t2 - - 100 ms Not emergency operating.
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VSVR 0.5 V
0V
5V
VB
3.3 V
t4
VDDIO 0.5 V
0V
VCONNIN
0V
LDO38
(Internal) 0V
1.5 V
LDO15
(Internal) 0V
CC1 or CC2
Pull Up Enable Hi-Z
(Pull Up)
(Ta = 25 °C)
Parameter Symbol Min Typ Max Unit Conditions
VSVR Falling Time t3 - - 400 ms
As for the timing of t4, it is arbitrary. But LSI may not maintain action of USB Type-C PD when it is lost during LSI action.
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Pin
1 LDO38
Pin
4 LDO15
5 ADCVREF
Pin
7 XLCPOFF1
11 XCLPOFF2
GND
Pin
8 CC1
10 CC2
VCCIN
Pin
12 CSN
13 CSP
Pin
ADCVREF
14 ADCIN
GND
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Pin
15 IDSEL
GND GND
VDDIO
18 GPIO10
19 GPIO11
21 GPIO0
22 GPIO1
23 GPIO2 Pin
24 GPIO3
25 GPIO4
26 GPIO5
27 GPIO6
28 GPIO7
29 GPIO8
30 GPIO9 GND GND
Pin
32 S1_DRV
34 S2_DRV
Sx_SRC
Sx_DRV
Pin
33 S1_SRC
35 S2_SRC
GND
Pin
36 DSCHG
GND
VCCIN
Pin
40 XRST
GND
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Operational Notes
3. Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
6. Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power
supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and
routing of connections.
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P B C
P+ P+ P+ N P P+
N N N N Parasitic N N N
E
Elements
Parasitic
P Substrate P Substrate
Elements
GND GND GND GND
Parasitic Parasitic N Region
Elements Elements close-by
Figure 1. Example of Monolithic IC Structure
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Ordering Information
B D 9 3 F 5 9 M W V - E2
Marking Diagram
Pin 1 Mark
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Revision History
Date Revision Changes
02, Dec.2019 001 New Release
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Notice
Precaution on using ROHM Products
1. Our Products are designed and manufactured for application in ordinary electronic equipment (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN USA EU CHINA
CLASSⅢ CLASSⅡb
CLASSⅢ CLASSⅢ
CLASSⅣ CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used.
However, recommend sufficiently about the residue.) ; or Washing our Products by using water or water-soluble
cleaning agents for cleaning residue after soldering
[h] Use of the Products in places subject to dew condensation
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Notice-PGA-E Rev.004
© 2015 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Notice-PGA-E Rev.004
© 2015 ROHM Co., Ltd. All rights reserved.
Datasheet
General Precaution
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales
representative.
3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.