vnl5050n3 e
vnl5050n3 e
vnl5050n3 e
VNL5050S5-E
OMNIFET III
fully protected low-side driver
Datasheet - production data
Description
2
The VNL5050N3-E and VNL5050S5-E are
monolithic devices made using
3 STMicroelectronics VIPower® Technology,
2
1 intended for driving resistive or inductive loads
SOT-223 SO-8 with one side connected to the battery.
Built-in thermal shutdown protects the chip from
overtemperature and short-circuit. Output current
Features limitation protects the devices in an overload
condition. In case of long duration overload, the
Type Vclamp RDS(on) ID devices limit the dissipated power to a safe level
up to thermal shutdown intervention.Thermal
VNL5050N3-E shutdown, with automatic restart, allows the
41 V 50 mΩ 19 A
VNL5050S5-E devices to recover normal operation as soon as a
fault condition disappears. Fast demagnetization
of inductive loads is achieved at turn-off.
• Automotive qualified
• Drain current: 19 A
• ESD protection
• Overvoltage clamp
• Thermal shutdown
• Current and power limitation
• Very low standby current
• Very low electromagnetic susceptibility
• Compliant with European directive 2002/95/EC
• Open drain status output (VNL5050S5-E only)
Contents
3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.1 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3.2 MCU I/O protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
List of tables
List of figures
Current Power
Limitation Clamp
IN DRIVER
OVERTEMPERATURE
PROTECTION
OVERLOAD PROTECTION
(ACTIVE POWER LIMITATION)
GND
OFF State
LOGIC Open load
Current Power
Limitation Clamp
IN DRIVER
OVERTEMPERATURE
ST
PROTECTION
OVERLOAD PROTECTION
(ACTIVE POWER LIMITATION)
GND
Voltage controlled input pin with hysteresis, CMOS compatible. Controls output
INPUT
switch state(1)
DRAIN Power MOS drain
SOURCE Power MOS source and ground reference for the control section
SUPPLY
Supply voltage connected to the signal part (5 V)
VOLTAGE
STATUS Open drain digital diagnostic pin(2)
1. Internally connected to Vsupply in the VNL5050N3-E
2. Valid for VNL5050S5-E only.
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Floating X X X
To ground Not allowed X Through 10 kΩ resistor
Stressing the device above the rating listed in the Table 4 may cause permanent damage to
the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.
Electrostatic discharge
(R = 1.5 kΩ; C = 100 pF)
VESD1 V
– DRAIN 5000
– SUPPLY, INPUT, STATUS 4000
Electrostatic discharge on output pin only
VESD2 2000 V
(R = 330 Ω, C = 150 pF)
Tj Junction operating temperature -40 to 150 °C
Tstg Storage temperature -55 to 150 °C
Single pulse avalanche energy
EAS 93 mJ
(L = 1.1 mH, TJ = 150 °C, RL = 0, IOUT = IlimL)
3 Electrical characteristics
Values specified in this section are for Vsupply = VIN = 4.5 V to 5.5 V, -40 °C < Tj < 150 °C,
unless otherwise stated.
ISTAT = 1 mA 5.5 7
VSTCL Status clamp voltage V
ISTAT = -1 mA -0.7
1. Valid for VNL5050S5-E option
OFF-state: Tj = 25 °C;
10 25
VIN = VDRAIN = 0 V;
IS Supply current µA
ON-state: Tj = 25 °C;
25 65
VIN = 5 V; VDS = 0 V
ISCL = 1 mA 5.5 7
VSCL Supply clamp voltage V
ISCL = -1 mA -0.7
1. Valid for VNL5050S5-E option
VDS = 13 V;
IlimH DC short-circuit current 19 27 38 A
Vsupply = VIN = 5 V
Short-circuit current VDS = 13 V; TR < Tj < TTSD;
IlimL 11 A
during thermal cycling Vsupply = VIN = 5 V
Step response current
tdlimL VDS = 13 V; Vinput = 5 V 44 µs
limit
TTSD Shutdown temperature — 150 175 200 °C
TR(2) Reset temperature — TRS + 1 TRS + 5 °C
Thermal reset of
TRS (3) — 135 °C
STATUS
Thermal hysteresis
THYST — 7 °C
(TTSD - TR)
1. Vsupply = Vinput in VNL5050N3-E version
2. Valid for VNL5050S5-E option
Figure 6. Source diode forward characteristics Figure 7. Static drain source on-resistance vs.
drain current
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Figure 8. Static drain source on-resistance vs. Figure 9. Static drain source on-resistance vs.
input voltage drain current
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Figure 10. Transfer characteristics Figure 11. Transfer characteristics (inside view
for VIN = 2 V to 3 V)
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L H H
Normal operation
H L H
L H H
Current limitation
H X H
L H H
Overtemperature
H H L
L H X
Undervoltage
H H X
L L L
Output voltage < VOL
H L H
1. Valid for VNL5050S5-E option
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Equation 1
0 .7 (V OH μ C − V IH )
≤ R prot ≤
I latchup I IH max
Let:
• Ilatchup > 20 mA
• VOHµC > 4.5 V
• 35 Ω ≤ Rprot ≤ 100 KΩ
Then, the recommended value is Rprot = 1 KΩ
Figure 18 shows the turn-off current drawn during the demagnetization.
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1. Layout condition of Rth and Zth measurements (PCB FR4 area = 30 mm x 58 mm, PCB thickness = 2 mm,
Cu thickness = 35 µm, copper areas: from minimum pad lay-out to 0.8 cm2).
Figure 20. Rthj-amb vs. PCB copper area in open box free air condition
RTHjamb (°C/W)
150 footprint
140 RTHj_amb(°C/W)
130
120
110
100
90
80
70
60
0 0.5 1 1.5 2 2.5
2
PCB Cu heatsink area (cm )
ZTH (°C/W)
1000
Cu footprint
100
Cu=2 cm2
10
0.1
0.0001 0.001 0.01 0.1 1 10 100 1000
Time (s)
Z = R Þδ+Z (1 – δ)
THδ TH THtp
where δ = tP/T
1. The fitting model is a semplified thermal tool and is valid for transient evolutions where the embedded
protections (power limitation or thermal cycling during thermal shutdown) are not triggered.
R1 (°C/W) 0.4
R2 (°C/W) 0.8
R3 (°C/W) 4.5
R4 (°C/W) 24
R5 (°C/W) 0.1
R6 (°C/W) 115 45
C1 (W.s/°C) 0.00006
C2 (W.s/°C) 0.0005
C3 (W.s/°C) 0.03
C4 (W.s/°C) 0.16
C5 (W.s/°C) 1000
C6 (W.s/°C) 0.4 2
1. Layout condition of Rth and Zth measurements (PCB FR4 area = 58 mm x 58 mm, PCB thickness = 2 mm,
Cu thickness = 35 µm (front and back side), Copper areas: from minimum pad lay-out to 2 cm2).
Figure 24. Rthj-amb vs. PCB copper area in open box free air condition
RTHjamb (°C/W)
105
footprint
RTHj_amb(°C/W)
95
85
75
65
0 0.5 1 1.5 2 2.5
PCB Cu heatsink area (cm2)
Cu=footprint
100
Cu=2 cm2
10
0.1
0.0001 0.001 0.01 0.1 1 10 100 1000
Time (s)
Z = R Þδ+Z (1 – δ)
THδ TH THtp
where δ = tP/T
1. The fitting model is a semplified thermal tool and is valid for transient evolutions where the embedded
protections (power limitation or thermal cycling during thermal shutdown) are not triggered.
R1 (°C/W) 0.4
R2 (°C/W) 2.4
R3 (°C/W) 3.5
R4 (°C/W) 21
R5 (°C/W) 16
R6 (°C/W) 58 28
C1 (W.s/°C) 0.00008
C2 (W.s/°C) 0.0016
C3 (W.s/°C) 0.0075
C4 (W.s/°C) 0.045
C5 (W.s/°C) 0.35
C6 (W.s/°C) 1.05 2
5.1 ECOPACK®
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
0046067
A 1.8 0.071
B 0.6 0.7 0.85 0.024 0.027 0.033
B1 2.9 3 3.15 0.114 0.118 0.124
c 0.24 0.26 0.35 0.009 0.01 0.014
D 6.3 6.5 6.7 0.248 0.256 0.264
e 2.3 0.09
e1 4.6 0.181
E 3.3 3.5 3.7 0.13 0.138 0.146
H 6.7 7 7.3 0.264 0.276 0.287
V 10 (max)
A1 0.02 0.1 0.0008 0.004
A 1.75
A1 0.10 0.25
A2 1.25
b 0.28 0.48
c 0.17 0.23
e 1.27
h 0.25 0.50
L 0.40 1.27
L1 1.04
k 0° 8°
ccc 0.10
1. Dimension D does not include mold flash, protrusions or gate burrs. Mold flash, potrusions or gate burrs
shall not exceed 0.15 mm in total (both side).
2. Dimension “E1” does not include interlead flash or protrusions. Interlead flash or protrusions shall not
exceed 0.25 mm per side.
Reel dimensions
Base Q.ty 1000
Bulk Q.ty 1000
A (max) 330
B (min) 1.5
C (± 0.2) 13
F 20.2
G (+ 2 / -0) 12.4
N (min) 60
T (max) 18.4
Tape dimensions
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Tape width W 12
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 8
Hole Diameter D (+ 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 5.5
Compartment Depth K (max) 4.5
Hole Spacing P1 (± 0.1) 2
End
Start
Reel dimensions
Base q.ty 2500
Bulk q.ty 2500
A (max) 330
B (min) 1.5
C (± 0.2) 13
F 20.2
G (+ 2 / -0) 12.4
N (min) 60
T (max) 18.4
Tape dimensions
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Tape width W 12
Tape hole spacing P0 (± 0.1) 4
Component spacing P 8
Hole diameter D (+ 0.1/-0) 1.5
Hole diameter D1 (min) 1.5
Hole position F (± 0.05) 5.5
Compartment depth K (max) 4.5
Hole spacing P1 (± 0.1) 2
Start
6 Revision history
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