Shenzhen Tuofeng Semiconductor Technology Co.

, Ltd
06N03

Product Summary
Feature
VDS 30 V
•N-Channel
RDS(on) 6.0 mΩ
•Logic Level
ID 50 A
•Low On-Resistance RDS(on)

•Excellent Gate Charge x R DS(on) product (FOM) P- TO252 ,TO251

•Superior thermal resistance

2
•175°C operating temperature
1
•Avalanche rated
1 3
•dv/dt rated 2
3
•Ideal for fast switching buck converter

Type Package Marking

06N03 P- TO252 ,TO251 06N03

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Value Unit

Continuous drain current1)

ID 50 A
TC=25°C1)

Pulsed drain current ID puls 200

TC=25°C

Avalanche energy, single pulse 1) EAS 250 mJ

ID=20A, V DD=25V, RGS=25Ω

Repetitive avalanche energy, limited by T jmax2) EAR 15

Reverse diode dv/dt dv/dt 6 kV/µs

IS=50A, VDS=24V, di/dt=200A/µs, Tjmax=175°C

Gate source voltage VGS ±20 V

Power dissipation Ptot 150 W

TC=25°C

Operating and storage temperature Tj , Tstg -55... +175 °C

IEC climatic category; DIN IEC 68-1 55/175/56

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 Shenzhen Tuofeng Semiconductor Technology Co., Ltd
06N03

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - case RthJC - 0.7 1 K/W

Thermal resistance, junction - ambient, leaded RthJA - - 100

SMD version, device on PCB: RthJA

@ min. footprint - - 75
@ 6 cm2 cooling area 3) - - 50

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage V(BR)DSS 30 - - V

VGS=0V, I D=1mA

Gate threshold voltage, V GS = VDS VGS(th) 1.2 1.6 2

ID = 80 µA

Zero gate voltage drain current IDSS nA

- 50
VDS=30V, V GS=0V, T j=25°C

Gate-source leakage current IGSS - 1 100 nA

VGS=20V, VDS=0V

Drain-source on-state resistance RDS(on) - 10.0 mΩ

VGS=4.5V, ID=20A

Drain-source on-state resistance RDS(on) - 6.0

VGS=10V, ID=40A

1Current limited by bondwire ; with an RthJC = 1K/W the chip is able to carry ID= 113A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.

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 Shenzhen Tuofeng Semiconductor Technology Co., Ltd
06N03

Electrical Characteristics

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics
Transconductance gfs VDS≥2*ID*RDS(on)max, 29 58 - S
ID=30A

Input capacitance Ciss VGS=0V, VDS =25V, - 1900 2530 pF

f=1MHz
Output capacitance Coss - 740 990

Reverse transfer capacitance Crss - 180 270

Turn-on delay time td(on) VDD=15V, VGS=10V, - 7.3 11 ns

ID=25A,
Rise time tr - 19 29
RG =3.6Ω
Turn-off delay time td(off) - 34 50

Fall time tf - 20.5 30.7

Gate Charge Characteristics

Gate to source charge Qgs VDD=15V, ID=25A - 6.3 8.4 nC

Gate to drain charge Qgd - 12.3 16.4

Gate charge total Qg VDD=15V, ID=25A, - 25.8 34.3

VGS=0 to 5V

Output charge Qoss VDS=15V, ID =25A, - 35.5 31.9 nC

VGS=0V

Gate plateau voltage V(plateau) VDD=15V, ID=25A - 3.1 - V

Reverse Diode

Inverse diode continuous IS TC=25°C - - 50 A

forward current

Inv. diode direct current, pulsed I SM - - 200

Inverse diode forward voltage VSD VGS =0V, IF =50A - 0.9 1.2 V

Reverse recovery time t rr VR =15V, IF =lS , - 41 51 ns

diF /dt=100A/µs
Reverse recovery charge Q rr - 46 58 nC

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 Shenzhen Tuofeng Semiconductor Technology Co., Ltd
06N03

1 Power dissipation 2 Drain current

Ptot = f (TC) I D = f (TC)
parameter: VGS≥ 10 V

IPD06N03L IPD06N03L
160 55
A
W

45
120
40
Ptot

35

ID
100

30
80
25

60 20

15
40

10
20
5

0 0
0 20 40 60 80 100 120 140 160 °C 190 0 20 40 60 80 100 120 140 160 °C 190
TC TC

3 Safe operating area 4 Max. transient thermal impedance

I D = f ( VDS ) Z thJC = f (tp)
parameter : D = 0 , T C = 25 °C parameter : D = tp/T

10 3 IPD06N03L 10 1 IPD06N03L

K/W
A
tp = 7.6µs 10 0
D
/I
DS

10 µs
V
=

Z thJC

10 2
)
(on
DS
ID

10 -1
R

100 µs

D = 0.50
-2
10 0.20
1 1 ms 0.10
10
0.05
10 ms
DC single pulse 0.02
10 -3
0.01

10 0 -1 0 1 2
10 -4 -7 -6 -5 -4 -3 -2 0
10 10 10 V 10 10 10 10 10 10 10 s 10
VDS tp

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 Shenzhen Tuofeng Semiconductor Technology Co., Ltd
06N03

5 Typ. output characteristic 6 Typ. drain-source on resistance

I D = f (VDS); Tj=25°C RDS(on) = f (ID)
parameter: t p = 80 µs parameter: VGS

IPD06N03L IPD06N03L
120 Ptot = 150W 19
A Ω d e f g

i h VGS [V]
100 a 2.6 16
b 2.8
90

RDS(on)
c 3.0 14
d 3.2
80
e 3.4 12
ID

g
70 f 3.6
g 3.8
10
60
f h 4.5
i 10.0
50 8
h
e
40 6
30 d i
4
20 c
VGS [V] =
b
2 d e f g h i
10 3.2 3.4 3.6 3.8 4.5 10.0
a
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0 10 20 30 40 50 60 70 A 85
VDS ID

7 Typ. transfer characteristics 8 Typ. forward transconductance

I D= f ( VGS ); V DS≥ 2 x ID x R DS(on)max gfs = f(ID); Tj=25°C
parameter: t p = 80 µs parameter: gfs

60 90
A
S

50
70
45

40 60
g fs
ID

35
50
30
40
25

20 30

15
20
10
10
5

0 0
0 0.5 1 1.5 2 2.5 3 V 4 0 20 40 60 80 100 A 130
VGS ID

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 Shenzhen Tuofeng Semiconductor Technology Co., Ltd
06N03

9 Drain-source on-state resistance 10 Typ. gate threshold voltage

RDS(on) = f (Tj) VGS(th) = f (Tj)
parameter : ID = 30 A, V GS = 10 V parameter: VGS = VDS

IPD06N03L
14 2.5
Ω

12 1mA
V
11
RDS(on)

VGS(th)
10

9
1.5
8

7 98%

6 85µA
1
5 typ

3 0.5
2

0 0
-60 -20 20 60 100 140 °C 200 -60 -20 20 60 100 °C 180
Tj Tj

11 Typ. capacitances 12 Forward character. of reverse diode

C = f (VDS) IF = f (VSD )
parameter: VGS=0V, f=1 MHz parameter: Tj , tp = 80 µs

10 4 10 3 IPD06N03L

pF
Ciss
10 2
IF
C

10 3
Coss

10 1
Tj = 25 °C typ
Crss Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)

10 2 10 0
0 5 10 15 20 V 30 0 0.4 0.8 1.2 1.6 2 2.4 V 3
VDS VSD

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 Shenzhen Tuofeng Semiconductor Technology Co., Ltd
06N03

13 Typ. avalanche energy 15 Drain-source breakdown voltage

EAS = f (T j) V(BR)DSS = f (Tj)
par.: I D = 20 A, V DD = 25 V, R GS = 25 Ω parameter: I D=10 mA

IPD06N03L
260 36
mJ
V
220

200 34

V(BR)DSS
180
E AS

33
160

140 32

120 31
100
30
80

60 29
40
28
20

0 27
25 45 65 85 105 125 145 °C 185 -60 -20 20 60 100 140 °C 200
Tj Tj

14 Typ. gate charge

VGS = f (Q Gate)
parameter: I D = 25 A pulsed

IPD06N03L
16

12
V GS

10

0.2 VDS max

8
0.5 VDS max

6 0.8 VDS max

0
0 10 20 30 40 50 60 nC 75
Q Gate

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 Shenzhen Tuofeng Semiconductor Technology Co., Ltd
06N03

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D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.

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For information on the types in question please contact your nearest Infineon Technologies Office.

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