MCP1640/B/C/D

0.65V Start-up Synchronous Boost Regulator with True

Output Disconnect or Input/Output Bypass Option
Features General Description
• Up to 96% Typical Efficiency The MCP1640/B/C/D is a compact, high-efficiency,
• 800 mA Typical Peak Input Current Limit: fixed frequency, synchronous step-up DC-DC con-
- IOUT > 100 mA @ 1.2V VIN, 3.3V VOUT verter. It provides an easy-to-use power supply solution
for applications powered by either one-cell, two-cell, or
- IOUT > 350 mA @ 2.4V VIN, 3.3V VOUT
three-cell alkaline, NiCd, NiMH, one-cell Li-Ion or
- IOUT > 350 mA @ 3.3V VIN, 5.0V VOUT Li-Polymer batteries.
• Low Start-up Voltage: 0.65V, typical 3.3V VOUT
Low-voltage technology allows the regulator to start up
@ 1 mA
without high inrush current or output voltage overshoot
• Low Operating Input Voltage: 0.35V, typical from a low 0.65V input. High efficiency is accomplished
3.3VOUT @ 1 mA by integrating the low resistance N-Channel Boost
• Adjustable Output Voltage Range: 2.0V to 5.5V switch and synchronous P-Channel switch. All
• Maximum Input Voltage  VOUT < 5.5V compensation and protection circuitry are integrated to
• Automatic PFM/PWM Operation (MCP1640/C): minimize external components. For standby
applications, the MCP1640 operates and consumes
- PFM Operation Disabled (MCP1640B/D)
only 19 µA while operating at no load and provides a
- PWM Operation: 500 kHz true disconnect from input to output while shut down
• Low Device Quiescent Current: 19 µA, typical (EN = GND). Additional device options are available
PFM Mode that operate in PWM only mode and connect input to
• Internal Synchronous Rectifier output bypass while shut down.
• Internal Compensation A “true” load disconnect mode provides input to output
• Inrush Current Limiting and Internal Soft-Start isolation while disabled by removing the normal boost
• Selectable, Logic Controlled, Shutdown States: regulator diode path from input to output. A bypass
- True Load Disconnect Option (MCP1640/B) mode option connects the input to the output using the
integrated low resistance P-Channel MOSFET, which
- Input to Output Bypass Option (MCP1640C/D)
provides a low bias keep alive voltage for circuits
• Shutdown Current (All States): < 1 µA operating in Deep Sleep mode. Both options consume
• Low Noise, Anti-Ringing Control less than 1 µA of input current.
• Overtemperature Protection Output voltage is set by a small external resistor
• Available Packages: divider. Two package options, SOT23-6 and 2x3
- SOT23-6 DFN-8, are available.
- 2x3 8-Lead DFN
Package Types
Applications MCP1640 MCP1640
• One, Two and Three Cell Alkaline and NiMH/NiCd 6-Lead SOT23 2x3 DFN*
Portable Products
• Single Cell Li-Ion to 5V Converters SW 1 6 VIN VFB 1 8 VIN
• Li Coin Cell Powered Devices GND 2 5 VOUT
SGND 2 EP 7 VOUTS
• Personal Medical Products PGND 3 9
6 VOUTP
EN 3 4 VFB
• Wireless Sensors EN 4 5 SW
• Handheld Instruments
• GPS Receivers * Includes Exposed Thermal Pad (EP); see Table 3-1.
• Bluetooth Headsets
• +3.3V to +5.0V Distributed Power Supply

 2010 Microchip Technology Inc. DS22234A-page 1

MCP1640/B/C/D

L1
4.7 µH

VOUT
VIN 3.3V @ 100 mA
SW V
0.9V To 1.7V OUT
VIN
976 K
COUT
+ CIN
VFB 10 µF
ALKALINE

4.7 µF EN
562 K

- GND

L1
4.7 µH

VOUT
VIN 5.0V @ 300 mA
SW V
3.0V To 4.2V OUTS
VIN VOUTP 976 K
COUT
+ CIN
4.7 µF VFB 10 µF
EN
LI-ION

309 K

- PGND SGND

Efficiency vs. IOUT for 3.3VOUT

100.0
V IN = 2.5V
Efficiency (%)

80.0

V IN = 0.8V V IN = 1.2V
60.0

40.0
0.1 1.0 10.0 100.0 1000.0
Output Current (mA)

DS22234A-page 2  2010 Microchip Technology Inc.

 MCP1640/B/C/D
1.0 ELECTRICAL † Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
CHARACTERISTICS This is a stress rating only and functional operation of
Absolute Maximum Ratings † the device at those or any other conditions above those
indicated in the operational sections of this
EN, FB, VIN, VSW, VOUT - GND ........................... +6.5V specification is not intended. Exposure to maximum
EN, FB ...........<greater of VOUT or VIN > (GND - 0.3V) rating conditions for extended periods may affect
Output Short Circuit Current....................... Continuous device reliability.
Output Current Bypass Mode........................... 400 mA
Power Dissipation ............................ Internally Limited
Storage Temperature .........................-65oC to +150oC
Ambient Temp. with Power Applied......-40oC to +85oC
Operating Junction Temperature........-40oC to +125oC
ESD Protection On All Pins:
HBM........................................................ 3 kV
MM........................................................ 300 V

DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, VIN = 1.2V, COUT = CIN = 10 µF, L = 4.7 µH, VOUT = 3.3V, IOUT = 15 mA,
TA = +25°C.
Boldface specifications apply over the TA range of -40oC to +85oC.
Parameters Sym Min Typ Max Units Conditions
Input Characteristics
Minimum Start-Up Voltage VIN — 0.65 0.8 V Note 1
Minimum Input Voltage After VIN — 0.35 — V Note 1
Start-Up
Output Voltage Adjust Range VOUT 2.0 5.5 V VOUT  VIN; Note 2
Maximum Output Current IOUT 150 — mA 1.2V VIN, 2.0V VOUT
100 150 — mA 1.5V VIN, 3.3V VOUT
350 — mA 3.3V VIN, 5.0V VOUT
Feedback Voltage VFB 1.175 1.21 1.245 V —
Feedback Input Bias Current IVFB — 10 — pA —
Quiescent Current – PFM IQPFM — 19 30 µA Measured at VOUT = 4.0V;
Mode EN = VIN, IOUT = 0 mA;
Note 3
Quiescent Current – PWM IQPWM — 220 — µA Measured at VOUT; EN = VIN
Mode IOUT = 0 mA; Note 3
Quiescent Current – Shutdown IQSHDN — 0.7 2.3 µA VOUT = EN = GND;
Includes N-Channel and
P-Channel Switch Leakage
NMOS Switch Leakage INLK — 0.3 1 µA VIN = VSW = 5V; VOUT =
5.5V VEN = VFB = GND
PMOS Switch Leakage IPLK — 0.05 0.2 µA VIN = VSW = GND;
VOUT = 5.5V
NMOS Switch ON Resistance RDS(ON)N — 0.6 —  VIN = 3.3V, ISW = 100 mA
PMOS Switch ON Resistance RDS(ON)P — 0.9 —  VIN = 3.3V, ISW = 100 mA
Note 1: 3.3 K resistive load, 3.3VOUT (1 mA).
2: For VIN > VOUT, VOUT will not remain in regulation.
3: IQ is measured from VOUT; VIN quiescent current will vary with boost ratio. VIN quiescent current can be
estimated by: (IQPFM * (VOUT/VIN)), (IQPWM * (VOUT/VIN)).
4: 220 resistive load, 3.3VOUT (15 mA).
5: Peak current limit determined by characterization, not production tested.

 2010 Microchip Technology Inc. DS22234A-page 3

MCP1640/B/C/D
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, VIN = 1.2V, COUT = CIN = 10 µF, L = 4.7 µH, VOUT = 3.3V, IOUT = 15 mA,
TA = +25°C.
Boldface specifications apply over the TA range of -40oC to +85oC.
Parameters Sym Min Typ Max Units Conditions
NMOS Peak Switch Current IN(MAX) 600 850 — mA Note 5
Limit
VOUT Accuracy VOUT% -3 — +3 % Includes Line and Load
Regulation; VIN = 1.5V
Line Regulation VOUT/ -1 0.01 1 %/V VIN = 1.5V to 3V
VOUT) / IOUT = 25 mA
VIN|
Load Regulation VOUT / -1 0.01 1 % IOUT = 25 mA to 100 mA;
VOUT| VIN = 1.5V
Maximum Duty Cycle DCMAX 88 90 — %
Switching Frequency fSW 425 500 575 kHz
EN Input Logic High VIH 90 — — %of VIN IOUT = 1 mA
EN Input Logic Low VIL — — 20 %of VIN IOUT = 1 mA
EN Input Leakage Current IENLK — 0.005 — µA VEN = 5V
Soft-start Time tSS — 750 — µS EN Low to High, 90% of
VOUT; Note 4
Thermal Shutdown Die TSD — 150 — C
Temperature
Die Temperature Hysteresis TSDHYS — 10 — C
Note 1: 3.3 K resistive load, 3.3VOUT (1 mA).
2: For VIN > VOUT, VOUT will not remain in regulation.
3: IQ is measured from VOUT; VIN quiescent current will vary with boost ratio. VIN quiescent current can be
estimated by: (IQPFM * (VOUT/VIN)), (IQPWM * (VOUT/VIN)).
4: 220 resistive load, 3.3VOUT (15 mA).
5: Peak current limit determined by characterization, not production tested.

TEMPERATURE SPECIFICATIONS
Electrical Specifications:
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Operating Junction Temperature TJ -40 — +125 °C Steady State
Range
Storage Temperature Range TA -65 — +150 °C
Maximum Junction Temperature TJ — — +150 °C Transient
Package Thermal Resistances
Thermal Resistance, 5L-TSOT23 JA — 192 — °C/W EIA/JESD51-3 Standard
Thermal Resistance, 8L-2x3 DFN JA — 93 — °C/W

DS22234A-page 4  2010 Microchip Technology Inc.

 MCP1640/B/C/D
2.0 TYPICAL PERFORMANCE CURVES
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Note: Unless otherwise indicated, VIN = EN = 1.2V, COUT = CIN = 10 µF, L = 4.7 µH, VOUT = 3.3V, ILOAD = 15 mA, TA = +25°C.

27.5 100 VOUT = 2.0V

VIN = 1.6V
VOUT = 5.0V 90
25.0 VIN = 1.2V
80
IQ PFM Mode (µA)

Efficiency (%)
22.5 70 VIN = 0.8V
VOUT = 3.3V 60
20.0
50 VIN = 1.2V
17.5 40

15.0 30
VOUT = 2.0V PWM / PFM
20
12.5 PWM ONLY
10
10.0 0
-40 -25 -10 5 20 35 50 65 80 0.01 0.1 1 10 100 1000

Ambient Temperature (°C) IOUT (mA)

FIGURE 2-1: VOUT IQ vs. Ambient FIGURE 2-4: 2.0V VOUT PFM / PWM
Temperature in PFM Mode. Mode Efficiency vs. IOUT.

100 V OUT = 3.3V V IN = 2.5V

300
VOUT = 5.0V 90
275 V IN = 1.2V 80
IQ PWM Mode (µA)

Efficiency (%)

70
250 VIN = 0.8V
60 VIN = 1.2V

225 50
VOUT = 3.3V
40
200 30
PWM / PFM
20
175 PWM ONLY
10
0
150
-40 -25 -10 5 20 35 50 65 80 0.01 0.1 1 10 100 1000

Ambient Temperature (°C) IOUT (mA)

FIGURE 2-2: VOUT IQ vs. Ambient FIGURE 2-5: 3.3V VOUT PFM / PWM
Temperature in PWM Mode. Mode Efficiency vs. IOUT.

600 100 VOUT = 5.0V VIN = 2.5V

VOUT = 5.0V
90
500 VOUT = 3.3V 80
VIN = 1.8V
Efficiency (%)

400 70 VIN = 1.2V

IOUT (mA)

60
300 VOUT = 2.0V 50
40
200
30
PWM / PFM
100 20
PWM ONLY
10
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0.01 0.1 1 10 100 1000
VIN (V) IOUT (mA)

FIGURE 2-3: Maximum IOUT vs. VIN. FIGURE 2-6: 5.0V VOUT PFM / PWM
Mode Efficiency vs. IOUT.

 2010 Microchip Technology Inc. DS22234A-page 5

MCP1640/B/C/D
Note: Unless otherwise indicated, VIN = EN = 1.2V, COUT = CIN = 10 µF, L = 4.7 µH, VOUT = 3.3V, ILOAD = 15 mA, TA = +25°C.

3.33 1.00
IOUT = 15 mA VIN = 1.2V
3.325 VOUT = 3.3V

3.32 0.85
VIN = 1.8V
3.315 Startup
VOUT (V)

0.70

VIN (V)
3.31
3.305
0.55
3.3
Shutdown
VIN = 0.8V
3.295 0.40
3.29
3.285 0.25
-40 -25 -10 5 20 35 50 65 80 0 20 40 60 80 100

Ambient Temperature (°C) IOUT (mA)

FIGURE 2-7: 3.3V VOUT vs. Ambient FIGURE 2-10: Minimum Start-up and
Temperature. Shutdown VIN into Resistive Load vs. IOUT.

3.38 525
VIN = 1.5V VOUT = 3.3V

Switching Frequency (kHz)

520
3.36
515
IOUT = 5 mA
3.34 510
VOUT (V)

505
3.32
500
3.30 495
IOUT = 15 mA
490
3.28
IOUT = 50 mA 485
3.26 480
-40 -25 -10 5 20 35 50 65 80 -40 -25 -10 5 20 35 50 65 80
Ambient Temperature (°C) Ambient Temperature (°C)

FIGURE 2-8: 3.3V VOUT vs. Ambient FIGURE 2-11: FOSC vs. Ambient
Temperature. Temperature.

3.40 4.5
TA = 85°C IOUT = 5 mA 4 VOUT = 5.0V
3.36 3.5
3
TA = 25°C V OUT = 3.3V
VOUT (V)

3.32
VIN (V)

2.5
2 VOUT = 2.0V
3.28
TA = - 40°C 1.5

3.24 1
0.5
3.20 0
0.8 1.2 1.6 2 2.4 2.8 0 1 2 3 4 5 6 7 8 9 10
VIN (V) IOUT (mA)

FIGURE 2-9: 3.3V VOUT vs. VIN. FIGURE 2-12: PWM Pulse Skipping Mode
Threshold vs. IOUT.

DS22234A-page 6  2010 Microchip Technology Inc.

 MCP1640/B/C/D
Note: Unless otherwise indicated, VIN = EN = 1.2V, COUT = CIN = 10 µF, L = 4.7 µH, VOUT = 3.3V, ILOAD = 15 mA, TA = +25°C.

10000
PWM / PFM
PWM ONLY

1000 VOUT = 5.0V

IIN (µA)

VOUT = 2.0V VOUT = 3.3V

100

VOUT = 2.0V VOUT = 3.3V VOUT = 5.0V

10
0.8 1.1 1.4 1.7 2 2.3 2.6 2.9 3.2 3.5
VIN (V)

FIGURE 2-13: Input No Load Current vs. FIGURE 2-16: MCP1640 3.3V VOUT PFM
VIN. Mode Waveforms.

5
Switch Resistance (Ohms)

4
P - Channel
3

1
N - Channel
0
1 1.5 2 2.5 3 3.5 4 4.5 5
> VIN or VOUT

FIGURE 2-14: N-Channel and P-Channel FIGURE 2-17: MCP1640B 3.3V VOUT
RDSON vs. > of VIN or VOUT. PWM Mode Waveforms.

16
VOUT = 5.0V
14
VOUT = 2.0V V OUT = 3.3V
12
IOUT (mA)

10

0
0 0.5 1 1.5 2 2.5 3 3.5 4
VIN (V)

FIGURE 2-15: PFM / PWM Threshold FIGURE 2-18: MCP1640/B High Load
Current vs. VIN. Waveforms.

 2010 Microchip Technology Inc. DS22234A-page 7

MCP1640/B/C/D
Note: Unless otherwise indicated, VIN = EN = 1.2V, COUT = CIN = 10 µF, L = 4.7 µH, VOUT = 3.3V, ILOAD = 15 mA, TA = +25°C.

FIGURE 2-19: 3.3V Start-up After Enable. FIGURE 2-22: MCP1640B 3.3V VOUT Load
Transient Waveforms.

FIGURE 2-20: 3.3V Start-up when VIN = FIGURE 2-23: MCP1640B 2.0V VOUT Load
VENABLE. Transient Waveforms.

FIGURE 2-21: MCP1640 3.3V VOUT Load FIGURE 2-24: 3.3V VOUT Line Transient
Transient Waveforms. Waveforms.

DS22234A-page 8  2010 Microchip Technology Inc.

 MCP1640/B/C/D
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.

TABLE 3-1: PIN FUNCTION TABLE

MCP1640/B/C/D MCP1640/B/C/D
Pin No. Description
SOT23 2x3 DFN
SW 1 5 Switch Node, Boost Inductor Input Pin
GND 2 Ground Pin
EN 3 4 Enable Control Input Pin
FB 4 1 Feedback Voltage Pin
VOUT 5 Output Voltage Pin
VIN 6 8 Input Voltage Pin
SGND 2 Signal Ground Pin
PGND 3 Power Ground Pin
VOUTS 7 Output Voltage Sense Pin
VOUTP 6 Output Voltage Power Pin
EP — 9 Exposed Thermal Pad (EP); must be connected to VSS.

3.1 Switch Node Pin (SW) 3.6 Power Supply Input Voltage Pin
Connect the inductor from the input voltage to the SW
(VIN)
pin. The SW pin carries inductor current and can be as Connect the input voltage source to VIN. The input
high as 800 mA peak. The integrated N-Channel switch source should be decoupled to GND with a 4.7 µF
drain and integrated P-Channel switch source are inter- minimum capacitor.
nally connected at the SW node.
3.7 Signal Ground Pin (SGND)
3.2 Ground Pin (GND) The signal ground pin is used as a return for the
integrated VREF and error amplifier. In the 2x3 DFN
The ground or return pin is used for circuit ground con- package, the SGND and power ground (PGND) pins are
nection. Length of trace from input cap return, output connected externally.
cap return and GND pin should be made as short as
possible to minimize noise on the GND pin. In the 3.8 Power Ground Pin (PGND)
SOT23-6 package, a single ground pin is used. The power ground pin is used as a return for the high-
current N-Channel switch. In the 2x3 DFN package, the
3.3 Enable Pin (EN) PGND and signal ground (SGND) pins are connected
externally.
The EN pin is a logic-level input used to enable or
disable device switching and lower quiescent current 3.9 Output Voltage Sense Pin (VOUTS)
while disabled. A logic high (>90% of VIN) will enable
the regulator output. A logic low (<20% of VIN) will The output voltage sense pin connects the regulated
ensure that the regulator is disabled. output voltage to the internal bias circuits. In the 2x3
DFN package, VOUTS and VOUTP are connected
externally.
3.4 Feedback Voltage Pin (FB)
3.10 Output Voltage Power Pin (VOUTP)
The FB pin is used to provide output voltage regulation
by using a resistor divider. The FB voltage will be 1.21V The output voltage power pin connects the output volt-
typical with the output voltage in regulation. age to the switch node. High current flows through the
integrated P-Channel and out of this pin to the output
3.5 Output Voltage Pin (VOUT) capacitor and output. In the 2x3 DFN package, VOUTS
and VOUTP are connected externally.
The output voltage pin connects the integrated
P-Channel MOSFET to the output capacitor. The FB 3.11 Exposed Thermal Pad (EP)
voltage divider is also connected to the VOUT pin for There is no internal electrical connection between the
voltage regulation. Exposed Thermal Pad (EP) and the PGND and SGND
pins. They must be connected to the same potential on
the Printed Circuit Board (PCB).

 2010 Microchip Technology Inc. DS22234A-page 9

MCP1640/B/C/D
NOTES:

DS22234A-page 10  2010 Microchip Technology Inc.

 MCP1640/B/C/D
4.0 DETAILED DESCRIPTION 4.1.3 TRUE OUTPUT DISCONNECT
OPTION
4.1 Device Option Overview The MCP1640/B devices incorporate a true output
disconnect feature. With the EN pin pulled low, the
The MCP1640/B/C/D family of devices is capable of
output of the MCP1640/B is isolated or disconnected
low start-up voltage and delivers high efficiency over a
from the input by turning off the integrated P-Channel
wide load range for single cell, two cell, three cell
switch and removing the switch bulk diode connection.
alkaline, NiMH, NiCd and single cell Li-Ion battery
This removes the DC path typical in boost converters,
inputs. A high level of integration lowers total system
which allows the output to be disconnected from the
cost, eases implementation and reduces board area.
input. During this mode, less than 1 µA of current is
The devices feature low start-up voltage, adjustable
consumed from the input (battery). True output discon-
output voltage, PWM/PFM mode operation, low IQ,
nect does not discharge the output; the output voltage
integrated synchronous switch, internal compensation,
is held up by the external COUT capacitance.
low noise anti-ring control, inrush current limit and soft
start. There are two feature options for the MCP1640/ 4.1.4 INPUT BYPASS OPTION
B/C/D family: PWM/PFM mode or PWM mode only,
and “true output disconnect” or input bypass. The MCP1640C/D devices incorporate the input
bypass shutdown option. With the EN input pulled low,
4.1.1 PWM/PFM MODE OPTION the output is connected to the input using the internal
P-Channel MOSFET. In this mode, the current draw
The MCP1640/C devices use an automatic switchover
from the input (battery) is less than 1 µA with no load.
from PWM to PFM mode for light load conditions to
The Input Bypass mode is used when the input voltage
maximize efficiency over a wide range of output
range is high enough for the load to operate in Sleep or
current. During PFM mode, higher peak current is used
low IQ mode. When a higher regulated output voltage is
to pump the output up to the threshold limit. While
necessary to operate the application, the EN input is
operating in PFM or PWM mode, the P-Channel switch
pulled high enabling the boost converter.
is used as a synchronous rectifier, turning off when the
inductor current reaches 0 mA to maximize efficiency. TABLE 4-1: PART NUMBER SELECTION
In PFM mode, a comparator is used to terminate
switching when the output voltage reaches the upper Part PWM/
PWM True Dis Bypass
threshold limit. Once switching has terminated, the Number PFM
output voltage will decay or coast down. During this MCP1640 X X
period, very low IQ is consumed from the device and
MCP1640B X X
input source, which keeps power efficiency high at light
load. The disadvantages of PWM/PFM mode are MCP1640C X X
higher output ripple voltage and variable PFM mode MCP1640D X X
frequency. The PFM mode frequency is a function of
input voltage, output voltage and load. While in PFM
mode, the boost converter pumps the output up at a
switching frequency of 500 kHz.

4.1.2 PWM MODE ONLY OPTION

The MCP1640B/D devices disable PFM mode
switching, and operate only in PWM mode over the
entire load range. During periods of light load opera-
tion, the MCP1640B/D continues to operate at a con-
stant 500 kHz switching frequency keeping the output
ripple voltage lower than PFM mode. During PWM only
mode, the MCP1640B/D P-Channel switch acts as a
synchronous rectifier by turning off to prevent reverse
current flow from the output cap back to the input in
order to keep efficiency high. For noise immunity, the
N-Channel MOSFET current sense is blanked for
approximately 100 ns. With a typical minimum duty
cycle of 100 ns, the MCP1640B/D continues to switch
at a constant frequency under light load conditions.
Figure 2-12 represents the input voltage versus load
current for the pulse skipping threshold in PWM only
mode. At lighter loads, the MCP1640B/D devices begin
to skip pulses.

 2010 Microchip Technology Inc. DS22234A-page 11

MCP1640/B/C/D
4.2 Functional Description Figure 4-1 depicts the functional block diagram of the
MCP1640/B/C/D.
The MCP1640/B/C/D is a compact, high-efficiency,
fixed frequency, step-up DC-DC converter that
provides an easy-to-use power supply solution for
applications powered by either one-cell, two-cell, or
three-cell alkaline, NiCd, or NiMH, or one-cell Li-Ion or
Li-Polymer batteries.

VOUT

INTERNAL
VIN
BIAS
IZERO

DIRECTION
CONTROL

SW SOFT-START
.3V

GATE DRIVE 0V
AND ILIMIT
SHUTDOWN
EN CONTROL
LOGIC
ISENSE

GND OSCILLATOR
SLOPE
COMP.


PWM/PFM
LOGIC

1.21V
FB
EA

FIGURE 4-1: MCP1640/B/C/D Block Diagram.

4.2.1 LOW-VOLTAGE START-UP 50% of its nominal value. Once the output voltage
The MCP1640/B/C/D is capable of starting from a low reaches 1.6V, normal closed-loop PWM operation is
input voltage. Start-up voltage is typically 0.65V for a initiated.
3.3V output and 1 mA resistive load. The MCP1640/B/C/D charges an internal capacitor
When enabled, the internal start-up logic turns the with a very weak current source. The voltage on this
rectifying P-Channel switch on until the output capacitor, in turn, slowly ramps the current limit of the
capacitor is charged to a value close to the input boost switch to its nominal value. The soft-start
voltage. The rectifying switch is current limited during capacitor is completely discharged in the event of a
this time. After charging the output capacitor to the commanded shutdown or a thermal shutdown.
input voltage, the device starts switching. If the input There is no undervoltage lockout feature for the
voltage is below 1.6V, the device runs open-loop with a MCP1640/B/C/D. The device will start up at the lowest
fixed duty cycle of 70% until the output reaches 1.6V. possible voltage and run down to the lowest possible
During this time, the boost switch current is limited to voltage. For typical battery applications, this may result
in “motor-boating” for deeply discharged batteries.

DS22234A-page 12  2010 Microchip Technology Inc.

 MCP1640/B/C/D
4.2.2 PWM MODE OPERATION 4.2.6 INTERNAL BIAS
In normal PWM operation, the MCP1640/B/C/D The MCP1640/B/C/D gets its start-up bias from VIN.
operates as a fixed frequency, synchronous boost Once the output exceeds the input, bias comes from
converter. The switching frequency is internally the output. Therefore, once started, operation is
maintained with a precision oscillator typically set to completely independent of VIN. Operation is only
500 kHz. The MCP1640B/D devices will operate in limited by the output power level and the input source
PWM only mode even during periods of light load series resistance. Once started, the output will remain
operation. By operating in PWM only mode, the output in regulation down to 0.35V typical with 1 mA output
ripple remains low and the frequency is constant. current for low source impedance inputs.
Operating in fixed PWM mode results in lower
efficiency during light load operation (when compared 4.2.7 INTERNAL COMPENSATION
to PFM mode (MCP1640/C)). The error amplifier, with its associated compensation
Lossless current sensing converts the peak current sig- network, completes the closed loop system by
nal to a voltage to sum with the internal slope compen- comparing the output voltage to a reference at the
sation. This summed signal is compared to the voltage input of the error amplifier, and feeding the amplified
error amplifier output to provide a peak current control and inverted signal to the control input of the inner
command for the PWM signal. The slope current loop. The compensation network provides
compensation is adaptive to the input and output phase leads and lags at appropriate frequencies to
voltage. Therefore, the converter provides the proper cancel excessive phase lags and leads of the power
amount of slope compensation to ensure stability, but is circuit. All necessary compensation components and
not excessive, which causes a loss of phase margin. slope compensation are integrated.
The peak current limit is set to 800 mA typical.
4.2.8 SHORT CIRCUIT PROTECTION
4.2.3 PFM MODE OPERATION Unlike most boost converters, the MCP1640/B/C/D
The MCP1640/C devices are capable of operating in allows its output to be shorted during normal operation.
normal PWM mode and PFM mode to maintain high The internal current limit and overtemperature
efficiency at all loads. In PFM mode, the output ripple protection limit excessive stress and protect the device
has a variable frequency component that changes with during periods of short circuit, overcurrent and over-
the input voltage and output current. With no load, the temperature. While operating in Bypass mode, the
quiescent current draw from the output is typically P-Channel current limit is inhibited to minimize
19 µA. The PFM mode can be disabled in selected quiescent current.
device options.
4.2.9 LOW NOISE OPERATION
PFM operation is initiated if the output load current falls
below an internally programmed threshold. The output The MCP1640/B/C/D integrates a low noise anti-ring
voltage is continuously monitored. When the output switch that damps the oscillations typically observed at
voltage drops below its nominal value, PFM operation the switch node of a boost converter when operating in
pulses one or several times to bring the output back the discontinuous inductor current mode. This removes
into regulation. If the output load current rises above the high frequency radiated noise.
the upper threshold, the MCP1640/C transitions
smoothly into PWM mode. 4.2.10 OVERTEMPERATURE
PROTECTION
4.2.4 ADJUSTABLE OUTPUT VOLTAGE Overtemperature protection circuitry is integrated in the
The MCP1640/B/C/D output voltage is adjustable with MCP1640/B/C/D. This circuitry monitors the device
a resistor divider over a 2.0V minimum to 5.5V junction temperature and shuts the device off if the
maximum range. High value resistors are junction temperature exceeds the typical +150oC
recommended to minimize quiescent current to keep threshold. If this threshold is exceeded, the device will
efficiency high at light loads. automatically restart once the junction temperature
drops by 10oC. The soft start is reset during an
4.2.5 ENABLE overtemperature condition.
The enable pin is used to turn the boost converter on
and off. The enable threshold voltage varies with input
voltage. To enable the boost converter, the EN voltage
level must be greater than 90% of the VIN voltage. To
disable the boost converter, the EN voltage must be
less than 20% of the VIN voltage.

 2010 Microchip Technology Inc. DS22234A-page 13

MCP1640/B/C/D
NOTES:

DS22234A-page 14  2010 Microchip Technology Inc.

 MCP1640/B/C/D
5.0 APPLICATION INFORMATION 5.3 Input Capacitor Selection
The boost input current is smoothed by the boost
5.1 Typical Applications inductor reducing the amount of filtering necessary at
The MCP1640/B/C/D synchronous boost regulator the input. Some capacitance is recommended to
operates over a wide input voltage and output voltage provide decoupling from the source. Low ESR X5R or
range. The power efficiency is high for several decades X7R are well suited since they have a low temperature
of load range. Output current capability increases with coefficient and small size. For most applications,
input voltage and decreases with increasing output 4.7 µF of capacitance is sufficient at the input. For high
voltage. The maximum output current is based on the power applications that have high source impedance or
N-Channel peak current limit. Typical characterization long leads, connecting the battery to the input 10 µF of
curves in this data sheet are presented to display the capacitance is recommended. Additional input
typical output current capability. capacitance can be added to provide a stable input
voltage.
5.2 Adjustable Output Voltage Table 5-1 contains the recommended range for the
Calculations input capacitor value.

To calculate the resistor divider values for the 5.4 Output Capacitor Selection
MCP1640/B/C/D, the following equation can be used.
Where RTOP is connected to VOUT, RBOT is connected The output capacitor helps provide a stable output
to GND and both are connected to the FB input pin. voltage during sudden load transients and reduces the
output voltage ripple. As with the input capacitor, X5R
EQUATION 5-1: and X7R ceramic capacitors are well suited for this
application.
V OUT 
R TOP = R BOT   ------------
The MCP1640/B/C/D is internally compensated so
–1
 V -  output capacitance range is limited. See Table 5-1 for
FB the recommended output capacitor range.
Example A: While the N-Channel switch is on, the output current is
supplied by the output capacitor COUT. The amount of
VOUT = 3.3V output capacitance and equivalent series resistance
VFB = 1.21V will have a significant effect on the output ripple
RBOT = 309 k voltage. While COUT provides load current, a voltage
drop also appears across its internal ESR that results
RTOP = 533.7 k (Standard Value = 536 k) in ripple voltage.
Example B:
VOUT = 5.0V EQUATION 5-2:
VFB = 1.21V
I OUT = C OUT   -------
dV
RBOT = 309 k dt
RTOP = 967.9 k (Standard Value = 976 k)
There are some potential issues with higher value Where dV represents the ripple voltage and dt
resistors. For small surface mount resistors, represents the ON time of the N-Channel switch (D * 1/
environment contamination can create leakage paths FSW).
that significantly change the resistor divider that effect Table 5-1 contains the recommended range for the
the output voltage. The FB input leakage current can input and output capacitor value.
also impact the divider and change the output voltage
tolerance. TABLE 5-1: CAPACITOR VALUE RANGE
CIN COUT
Min 4.7 µF 10 µF
Max none 100 µF

 2010 Microchip Technology Inc. DS22234A-page 15

MCP1640/B/C/D
5.5 Inductor Selection Peak current is the maximum or limit, and saturation
current typically specifies a point at which the induc-
The MCP1640/B/C/D is designed to be used with small
tance has rolled off a percentage of the rated value.
surface mount inductors; the inductance value can
This can range from a 20% to 40% reduction in induc-
range from 2.2 µH to 10 µH. An inductance value of
tance. As inductance rolls off, the inductor ripple cur-
4.7 µH is recommended to achieve a good balance
rent increases as does the peak switch current. It is
between inductor size, converter load transient
important to keep the inductance from rolling off too
response and minimized noise.
much, causing switch current to reach the peak limit.
TABLE 5-2: MCP1640/B/C/D
RECOMMENDED INDUCTORS 5.6 Thermal Calculations
Part Value DCR ISAT Size The MCP1640/B/C/D is available in two different
Number (µH)  (typ) (A) WxLxH (mm) packages (SOT23-6 and 2x3 DFN8). By calculating the
power dissipation and applying the package thermal
Coiltronics®
resistance, (JA), the junction temperature is esti-
SD3110 4.7 0.285 0.68 3.1x3.1x1.0 mated. The maximum continuous junction temperature
SD3112 4.7 0.246 0.80 3.1x3.1x1.2 rating for the MCP1640/B/C/D is +125oC.
SD3114 4.7 0.251 1.14 3.1x3.1x1.4 To quickly estimate the internal power dissipation for
SD3118 4.7 0.162 1.31 3.8x3.8x1.2 the switching boost regulator, an empirical calculation
using measured efficiency can be used. Given the
SD3812 4.7 0.256 1.13 3.8x3.8x1.2
measured efficiency, the internal power dissipation is
SD25 4.7 0.0467 1.83 5.0x5.0x2.5 estimated by Equation 5-3.
DCR
Part Value ISAT Size
 EQUATION 5-3:
Number (µH) (A) WxLxH (mm)
(max)
Wurth Elektronik®
V OUT  I OUT
- –  V OUT  I OUT  = P Dis
------------------------------
WE-TPC 4.7 0.200 0.8 2.8x2.8x1.35  Efficiency 
Type TH
WE-TPC 4.7 0.105 0.90 3.8x3.8x1.65
Type S
The difference between the first term, input power, and
WE-TPC 4.7 0.082 1.65 4.8x4.8x1.8 the second term, power delivered, is the internal
Type M MCP1640/B/C/D power dissipation. This is an estimate
WE-TPC 4.7 0.046 2.00 6.8x6.8x2.3 assuming that most of the power lost is internal to the
Type X MCP1640/B/C/D and not CIN, COUT and the inductor.
There is some percentage of power lost in the boost
DCR
Part Value ISAT Size inductor, with very little loss in the input and output

Number (µH) (A) WxLxH (mm) capacitors. For a more accurate estimation of internal
(max)
power dissipation, subtract the IINRMS2*LESR power
Sumida® dissipation.
CMH23 4.7 0.537 0.70 2.3x2.3x1.0
CMD4D06 4.7 0.216 0.75 3.5x4.3x0.8 5.7 PCB Layout Information
CDRH4D 4.7 0.09 0.800 4.6x4.6x1.5 Good printed circuit board layout techniques are
® important to any switching circuitry and switching
EPCOS
power supplies are no different. When wiring the
B82462A2 4.7 0.084 2.00 6.0x6.0x2.5
472M000 switching high current paths, short and wide traces
should be used. Therefore it is important that the input
B82462G4 4.7 0.04 1.8 6.3x6.3x3.0 and output capacitors be placed as close as possible to
472M the MCP1640/B/C/D to minimize the loop area.
Several parameters are used to select the correct The feedback resistors and feedback signal should be
inductor: maximum rated current, saturation current routed away from the switching node and the switching
and copper resistance (ESR). For boost converters, the current loop. When possible, ground planes and traces
inductor current can be much higher than the output should be used to help shield the feedback signal and
current. The lower the inductor ESR, the higher the minimize noise and magnetic interference.
efficiency of the converter, a common trade-off in size
versus efficiency.

DS22234A-page 16  2010 Microchip Technology Inc.

 MCP1640/B/C/D

Via to GND Plane

RBOT RTOP

+VIN +VOUT

L CIN MCP1640 COUT

1
GND

GND Via for Enable

FIGURE 5-1: MCP1640/B/C/D SOT23-6 Recommended Layout.

Wired on Bottom
L Plane

+VIN
+VOUT
CIN COUT
GND MCP1640 RTOP

1
RBOT
Enable

GND

FIGURE 5-2: MCP1640/B/C/D DFN-8 Recommended Layout.

 2010 Microchip Technology Inc. DS22234A-page 17

MCP1640/B/C/D
NOTES:

DS22234A-page 18  2010 Microchip Technology Inc.

 MCP1640/B/C/D
6.0 TYPICAL APPLICATION CIRCUITS

L1
4.7 µH

VOUT
MANGANESE LITHIUM
5.0V @ 5 mA
DIOXIDE BUTTON CELL SW V
OUT
VIN
+ CIN
976 K
COUT
2.0V TO 3.2V
4.7 µF EN VFB 10 µF
-
309 K
®
FROM PIC MCU I/O GND

Note: For applications that can operate directly from the battery input voltage during Sleep mode and
require a higher voltage during normal run mode, the MCP1640C device provides input to output
bypass when disabled. The PIC Microcontroller is powered by the output of the MCP1640C. One
of its I/O pins is used to enable and disable the MCP1640C to control its bias voltage. While
operating in Sleep mode, the MCP1640C input quiescent current is typically less than 1 uA.

FIGURE 6-1: Manganese Lithium Coin Cell Application using Bypass Mode.

L1
10 µH

VOUT
VIN 5.0V @ 350 mA
SW V
3.3V To 4.2V OUTS
VIN VOUTP 976 K
COUT
+ CIN
10 µF VFB 10 µF
EN
LI-ION

309 K

- PGND SGND

FIGURE 6-2: USB On-The-Go Powered by Li-Ion.

 2010 Microchip Technology Inc. DS22234A-page 19

MCP1640/B/C/D
NOTES:

DS22234A-page 20  2010 Microchip Technology Inc.

 MCP1640/B/C/D
7.0 PACKAGING INFORMATION
7.1 Package Marking Information (Not to Scale)

6-Lead SOT-23 Example

XXNN BZNN

8-Lead DFN Example

XXX AHM
YWW 945
NN 25

Legend: XX...X Customer-specific information

Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
e3 Pb-free JEDEC designator for Matte Tin (Sn)
* This package is Pb-free. The Pb-free JEDEC designator ( e3)
can be found on the outer packaging for this package.

Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.

 2010 Microchip Technology Inc. DS22234A-page 21

MCP1640/B/C/D

     

  /$  !$% $ 0 " . !1  ! ! $  2 0   & $ $ " $
$$ ,33...   3 0 

N 4

E
E1

PIN 1 ID BY
LASER MARK
1 2 3

e
e1

A A2 c φ

L
A1
L1

4$! 55##
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6% 9 &2! 6 
2$ )*+
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$ "&&   ; )
7-  ="$ #  ; 
" "2 0 ="$ #  ; <
7-  5  $   ; 
/$5  $ 5  ; 
/$ $ 5 ) ; <
/$   > ; >
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5 "="$ 9  ; )
 
  !! "#"$%"  "& ! $%!!"& ! $%!!! $ ' "  !" 
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*+, * ! !  $  ' $- % !..$%$$   !
     . + <*

DS22234A-page 22  2010 Microchip Technology Inc.

 MCP1640/B/C/D

Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging

 2010 Microchip Technology Inc. DS22234A-page 23

MCP1640/B/C/D

!  " #  $ %&'())*+,-."#

  /$  !$% $ 0 " . !1  ! ! $  2 0   & $ $ " $
$$ ,33...   3 0 

D e
b
N N
L

E E2

EXPOSED PAD

NOTE 1
NOTE 1
1 2 2 1
D2
TOP VIEW BOTTOM VIEW

A3 A1 NOTE 2

4$! 55##
 !5 $! 6 67 8
6% 9 &2! 6 <
2$ )*+
7-  :  $  <  
$ "&&    )
+$ $0 !!  #/
7-  5  $  *+
7-  ="$ # *+
#' ! "2 "5  $   ; ))
#' ! "2 "="$ # ) ; )
+$ $="$ 9  ) 
+$ $5  $ 5   )
+$ $ $ #' ! "2 " ?  ; ;
 
 2-!% " '& $%  - 19%$ %!$9  $ ".$$  $ "  
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  !  "$    #()
*+, * ! !  $  ' $- % !..$%$$   !
#/,  &    !1%!% .$%$$   1&& $ % ! !
     . + +

DS22234A-page 24  2010 Microchip Technology Inc.

 MCP1640/B/C/D

!  " #  $ %&'())*+,-."#

  /$  !$% $ 0 " . !1  ! ! $  2 0   & $ $ " $
$$ ,33...   3 0 

 2010 Microchip Technology Inc. DS22234A-page 25

MCP1640/B/C/D
NOTES:

DS22234A-page 26  2010 Microchip Technology Inc.

 MCP1640/B/C/D
APPENDIX A: REVISION HISTORY

Revision A (February 2010)

• Original Release of this Document.

 2010 Microchip Technology Inc. DS22234A-page 27

MCP1640/B/C/D
NOTES:

DS22234A-page 28  2010 Microchip Technology Inc.

 MCP1640/B/C/D
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO. X X /XX
Examples:
Device Tape Temperature Package a) MCP1640-I/MC: 0.65V, Sync Reg.,
and Reel Range 8LD-DFN pkg.
b) MCP1640T-I/MC: Tape and Reel,
0.65V, Sync Reg.,
Device MCP1640: 0.65V, PWM/PFM True Disconnect, 8LD-DFN pkg.
Sync Boost Regulator
MCP1640T: 0.65V, PWM/PFM True Disconnect, c) MCP1640B-I/MC: 0.65V, Sync Reg.,
Sync Boost Regulator (Tape and Reel) 8LD-DFN pkg.
MCP1640B: 0.65V, PWM Only True Disconnect,
Sync Boost Regulator d) MCP1640BT-I/MC: Tape and Reel,
MCP1640BT: 0.65V, PWM Only True Disconnect, 0.65V, Sync Reg.,
Sync Boost Regulator (Tape and Reel) 8LD-DFN pkg.
MCP1640C: 0.65V, PWM/PFM Input to Output Bypass,
Sync Boost Regulator e) MCP1640C-I/MC: 0.65V, Sync Reg.,
MCP1640CT: 0.65V, PWM/PFM Input to Output Bypass, 8LD-DFN pkg.
Sync Boost Regulator (Tape and Reel) f) MCP1640CT-I/MC: Tape and Reel,
MCP1640D: 0.65V, PWM Only Input to Output Bypass, 0.65V, Sync Reg.,
Sync Boost Regulator
MCP1640DT: 0.65V, PWM Only Input to Output Bypass, 8LD-DFN pkg.
Sync Boost Regulator (Tape and Reel) g) MCP1640D-I/MC:: 0.65V, Sync Reg.,
8LD-DFN pkg.
Temperature Range I = -40C to +85C (Industrial) h) MCP1640DT-I/MC:: Tape and Reel,
0.65V, Sync Reg.,
8LD-DFN pkg.
Package CH = Plastic Small Outline Transistor (SOT-23), 6-lead
MC = Plastic Dual Flat, No Lead (2x3 DFN), 8-lead i) MCP1640T-I/CHY: Tape and Reel,
0.65V, Sync Reg.,
6LD SOT-23 pkg.
j) MCP1640BT-I/CHY: Tape and Reel,
0.65V, Sync Reg.,
6LD SOT-23 pkg.
k) MCP1640CT-I/CHY: Tape and Reel,
0.65V, Sync Reg.,
6LD SOT-23 pkg.
l) MCP1640DT-I/CHY: Tape and Reel,
0.65V, Sync Reg.,
6LD SOT-23 pkg.

 2010 Microchip Technology Inc. DS22234A-page 29

MCP1640/B/C/D
NOTES:

DS22234A-page 30  2010 Microchip Technology Inc.

Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.

• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.

• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

• Microchip is willing to work with the customer who is concerned about the integrity of their code.

• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Information contained in this publication regarding device Trademarks

applications and the like is provided only for your convenience
The Microchip name and logo, the Microchip logo, dsPIC,
and may be superseded by updates. It is your responsibility to
KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART,
ensure that your application meets with your specifications.
rfPIC and UNI/O are registered trademarks of Microchip
MICROCHIP MAKES NO REPRESENTATIONS OR
Technology Incorporated in the U.S.A. and other countries.
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
OTHERWISE, RELATED TO THE INFORMATION, MXDEV, MXLAB, SEEVAL and The Embedded Control
INCLUDING BUT NOT LIMITED TO ITS CONDITION, Solutions Company are registered trademarks of Microchip
QUALITY, PERFORMANCE, MERCHANTABILITY OR Technology Incorporated in the U.S.A.
FITNESS FOR PURPOSE. Microchip disclaims all liability Analog-for-the-Digital Age, Application Maestro, CodeGuard,
arising from this information and its use. Use of Microchip dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
devices in life support and/or safety applications is entirely at ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
the buyer’s risk, and the buyer agrees to defend, indemnify and Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified
hold harmless Microchip from any and all damages, claims, logo, MPLIB, MPLINK, mTouch, Octopus, Omniscient Code
suits, or expenses resulting from such use. No licenses are Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
conveyed, implicitly or otherwise, under any Microchip PICtail, PIC32 logo, REAL ICE, rfLAB, Select Mode, Total
intellectual property rights. Endurance, TSHARC, UniWinDriver, WiperLock and ZENA
are trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2010, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.

ISBN: 978-1-60932-019-5

Microchip received ISO/TS-16949:2002 certification for its worldwide

headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.

 2010 Microchip Technology Inc. DS22234A-page 31

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China - Shenyang Taiwan - Hsin Chu
Kokomo Tel: 86-24-2334-2829 Tel: 886-3-6578-300
Kokomo, IN Fax: 86-24-2334-2393 Fax: 886-3-6578-370
Tel: 765-864-8360
Fax: 765-864-8387 China - Shenzhen Taiwan - Kaohsiung
Tel: 86-755-8203-2660 Tel: 886-7-536-4818
Los Angeles Fax: 86-755-8203-1760 Fax: 886-7-536-4803
Mission Viejo, CA
Tel: 949-462-9523 China - Wuhan Taiwan - Taipei
Fax: 949-462-9608 Tel: 86-27-5980-5300 Tel: 886-2-2500-6610
Fax: 86-27-5980-5118 Fax: 886-2-2508-0102
Santa Clara
Santa Clara, CA China - Xian Thailand - Bangkok
Tel: 408-961-6444 Tel: 86-29-8833-7252 Tel: 66-2-694-1351
Fax: 408-961-6445 Fax: 86-29-8833-7256 Fax: 66-2-694-1350

Toronto China - Xiamen

Mississauga, Ontario, Tel: 86-592-2388138
Canada Fax: 86-592-2388130
Tel: 905-673-0699 China - Zhuhai
Fax: 905-673-6509 Tel: 86-756-3210040
Fax: 86-756-3210049

01/05/10

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