Si 9407 BD
Si 9407 BD
Si 9407 BD
www.vishay.com
Vishay Siliconix
P-Channel 60 V (D-S) MOSFET
SO-8 Single FEATURES
D • TrenchFET® power MOSFET
D 5
D 6 • 100 % UIS tested
D 7
8
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Available
4 APPLICATIONS
3 G S
2 S • Primary side switch
1 S
S
Top View
G
PRODUCT SUMMARY
VDS (V) -60
RDS(on) max. () at VGS = -10 V 0.120
RDS(on) max. () at VGS = -4.5 V 0.150
Qg typ. (nC) 8 D
ID (A) a -4.7
P-Channel MOSFET
Configuration Single
ORDERING INFORMATION
Package SO-8
Lead (Pb)-free Si9407BDY-T1-E3
Lead (Pb)-free and halogen-free Si9407BDY-T1-GE3
25 5
VGS = 10 V thru 5 V
20 4
15 3
VGS = 4 V
10 2
TC = 25 °C
5 1
VGS = 3 V TC = 150 °C
TC = - 55 °C
0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0.30 1000
0.25
800
R DS(on) - On-Resistance (Ω)
Ciss
C - Capacitance (pF)
0.20
600
VGS = 10 V 400
0.10
200
0.05 Coss
Crss
0 0
0 5 10 15 20 0 10 20 30 40 50 60
10 1.8
ID = 3.2 A
ID = 3.2 A
VGS - Gate-to-Source Voltage (V)
8 1.6
VGS = 10 V
R DS(on) - On-Resistance
1.4
6
(Normalized)
VDS = 30 V 1.2
VGS = 4.5 V
4
1.0
2
0.8
0 0.6
0 3 6 9 12 15 - 50 - 25 0 25 50 75 100 125 150
100 0.30
ID = 3.2 A
0.25
0.20 TA = 125 °C
10 TJ = 150 °C
0.15
TA = 25 °C
TJ = 25 °C 0.10
1 0.05
0.0 0.2 0.4 0.6 0.8 1.0 1.2 2 4 6 8 10
0.6 30
25
0.4
ID = 250 µA
VGS(th) Variance (V)
20
0.2
Power (W)
15
0
10
- 0.2
5
- 0.4 0
- 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 1000
TJ - Temperature (°C) Time (s)
100
10 Limited by RDS(on)*
I D - Drain Current (A)
100 µs
1 1 ms
10 ms
100 ms
0.1
1s
10 s
TA = 25 °C BVDSS DC
Single Pulse Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
6 5
5
4
4
3
2
2
1
1
0 0
0 25 50 75 100 125 150 25 50 75 100 125 150
Note
a. The power dissipation PD is based on TJ max = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
1
Normalized Effective Transient
0.2
Notes:
0.1
0.1 PDM
0.05 t1
t2
t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 75 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 1000
Square Wave Pulse Duration (s)
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1 0.05
0.02
Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10
Square Wave Pulse Duration (s)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69902.
8 7 6 5
E H
1 2 3 4
D h x 45
C
0.25 mm (Gage Plane)
A
All Leads
q 0.101 mm
e B A1 L
0.004"
MILLIMETERS INCHES
DIM Min Max Min Max
A 1.35 1.75 0.053 0.069
A1 0.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q 0° 8° 0° 8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
0.172
(4.369)
0.028
(0.711)
(6.248)
(3.861)
0.246
0.152
(1.194)
0.047
0.022 0.050
(0.559) (1.270)
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