Si 9407 BD

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Si9407BDY

www.vishay.com
Vishay Siliconix
P-Channel 60 V (D-S) MOSFET
SO-8 Single FEATURES
D • TrenchFET® power MOSFET
D 5
D 6 • 100 % UIS tested
D 7
8
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Available

4 APPLICATIONS
3 G S
2 S • Primary side switch
1 S
S
Top View
G
PRODUCT SUMMARY
VDS (V) -60
RDS(on) max. () at VGS = -10 V 0.120
RDS(on) max. () at VGS = -4.5 V 0.150
Qg typ. (nC) 8 D
ID (A) a -4.7
P-Channel MOSFET
Configuration Single

ORDERING INFORMATION
Package SO-8
Lead (Pb)-free Si9407BDY-T1-E3
Lead (Pb)-free and halogen-free Si9407BDY-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS -60
V
Gate-source voltage VGS ± 20
TC = 25 °C -4.7
TC = 70 °C -3.8
Continuous drain current (TJ = 150 °C) ID
TA = 25 °C -3.2 b, c
TA = 70 °C -2.6 b, c
A
Pulsed drain current (10 μs width) IDM -20
TC = 25 °C -4.2
Continuous source-drain diode current IS
TA = 25 °C -2 b, c
Avalanche current IAS -15
L = 0.1 mH
Single-pulse avalanche energy EAS 11 mJ
TC = 25 °C 5
TC = 70 °C 3.2
Maximum power dissipation PD W
TA = 25 °C 2.4 b, c
TA = 70 °C 1.5 b, c
Operating junction and storage temperature range TJ, Tstg -55 to +150 °C

THERMAL RESISTANCE RATINGS


PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient b, d RthJA 42 53
°C/W
Maximum junction-to-foot (drain) Steady state RthJF 19 25
Notes
a. Based on TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. Maximum under steady state conditions is 85 °C/W

S09-0704-Rev. B, 27-Apr-09 1 Document Number: 69902


For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si9407BDY
www.vishay.com
Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)


PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = -250 μA -60 - - V
VDS temperature coefficient VDS/TJ - -50 -
ID = -250 μA mV/°C
VGS(th) temperature coefficient VGS(th)/TJ - 4 -
Gate-source threshold voltage VGS(th) VDS = VGS, ID = -250 μA -1 - -3 V
Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA
VDS = -60 V, VGS = 0 V - - -1
Zero gate voltage drain current IDSS μA
VDS = -60 V, VGS = 0 V, TJ = 55 °C - - -10
On-state drain current a ID(on) VDS  -5 V, VGS = -10 V -20 - - A
VGS = -10 V, ID = -3.2 A - 0.100 0.120
Drain-source on-state resistance a RDS(on) 
VGS = -4.5 V, ID = -2.9 A - 0.126 0.150
Forward transconductance a gfs VDS = -15 V, ID = -3.2 A - 8.5 - S
Dynamic b
Input capacitance Ciss - 600 -
Output capacitance Coss VDS = -30 V, VGS = 0 V, f = 1 MHz - 70 - pF
Reverse transfer capacitance Crss - 50 -
VDS = -30 V, VGS = -10 V, ID = -3.2 A - 14.5 22
Total gate charge Qg
- 8 12
nC
Gate-source charge Qgs VDS = -30 V, VGS = -4.5 V, ID = -3.9 A - 2.2 -
Gate-drain charge Qgd - 3.7 -
Gate resistance Rg f = 1 MHz - 14 - 
Turn-on delay time td(on) - 30 45
Rise time tr VDD = -30 V, RL = 11.5  - 70 105
ns
Turn-off delay time td(off) ID  -2.6 A, VGEN = -4.5 V, Rg = 1  - 40 60
Fall time tf - 30 45
Turn-on delay time td(on) - 10 15
Rise time tr VDD = -30 V, RL = 11.5  - 13 20
ns
Turn-off delay time td(off) ID  -2.6 A, VGEN = -10 V, Rg = 1  - 35 55
Fall time tf - 30 45
Drain-Source Body Diode Characteristics
Continuous source-drain diode current IS TC = 25 °C - - -4.2
A
Pulse diode forward current ISM - - -20
Body diode voltage VSD IS = -2 A, VGS = 0 V - -0.8 -1.2 V
Body diode reverse recovery time trr - 30 50 ns
Body diode reverse recovery charge Qrr IF = -2 A, di/dt = -100 A/μs, - 35 60 nC
Reverse recovery fall time ta TJ = 25 °C - 16 -
ns
Reverse recovery rise time tb - 14 -
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing




Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

S09-0704-Rev. B, 27-Apr-09 2 Document Number: 69902


For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si9407BDY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

25 5
VGS = 10 V thru 5 V

20 4

I D - Drain Current (A)


I D - Drain Current (A)

15 3

VGS = 4 V
10 2
TC = 25 °C

5 1
VGS = 3 V TC = 150 °C
TC = - 55 °C
0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

0.30 1000

0.25
800
R DS(on) - On-Resistance (Ω)

Ciss
C - Capacitance (pF)

0.20
600

0.15 VGS = 4.5 V

VGS = 10 V 400
0.10

200
0.05 Coss

Crss
0 0
0 5 10 15 20 0 10 20 30 40 50 60

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

10 1.8
ID = 3.2 A
ID = 3.2 A
VGS - Gate-to-Source Voltage (V)

8 1.6

VGS = 10 V
R DS(on) - On-Resistance

1.4
6
(Normalized)

VDS = 30 V 1.2
VGS = 4.5 V
4
1.0

2
0.8

0 0.6
0 3 6 9 12 15 - 50 - 25 0 25 50 75 100 125 150

Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)

Gate Charge On-Resistance vs. Junction Temperature

S09-0704-Rev. B, 27-Apr-09 3 Document Number: 69902


For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si9407BDY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

100 0.30
ID = 3.2 A

0.25

R DS(on) - On-Resistance (Ω)


I S - Source Current (A)

0.20 TA = 125 °C

10 TJ = 150 °C
0.15

TA = 25 °C
TJ = 25 °C 0.10

1 0.05
0.0 0.2 0.4 0.6 0.8 1.0 1.2 2 4 6 8 10

VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

0.6 30

25
0.4
ID = 250 µA
VGS(th) Variance (V)

20
0.2
Power (W)

15

0
10

- 0.2
5

- 0.4 0
- 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 1000
TJ - Temperature (°C) Time (s)

Threshold Voltage Single Pulse Power, Junction-to-Ambient

100

10 Limited by RDS(on)*
I D - Drain Current (A)

100 µs

1 1 ms

10 ms
100 ms
0.1
1s
10 s
TA = 25 °C BVDSS DC
Single Pulse Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area

S09-0704-Rev. B, 27-Apr-09 4 Document Number: 69902


For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si9407BDY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

6 5

5
4

Power Dissipation (W)


I D - Drain Current (A)

4
3

2
2

1
1

0 0
0 25 50 75 100 125 150 25 50 75 100 125 150

TC - Case Temperature (°C) TC - Case Temperature (°C)

Current Derating a Power Derating

Note
a. The power dissipation PD is based on TJ max = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit

S09-0704-Rev. B, 27-Apr-09 5 Document Number: 69902


For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si9407BDY
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

1
Normalized Effective Transient

Duty Cycle = 0.5


Thermal Impedance

0.2
Notes:
0.1
0.1 PDM

0.05 t1
t2
t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 75 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 1000
Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1

0.1 0.05

0.02

Single Pulse

0.01
10 -4 10 -3 10 -2 10 -1 1 10
Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot




















Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69902.

S09-0704-Rev. B, 27-Apr-09 6 Document Number: 69902


For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix

SOIC (NARROW): 8-LEAD


JEDEC Part Number: MS-012

8 7 6 5

E H

1 2 3 4

D h x 45
C
0.25 mm (Gage Plane)
A
All Leads

q 0.101 mm
e B A1 L
0.004"

MILLIMETERS INCHES
DIM Min Max Min Max
A 1.35 1.75 0.053 0.069
A1 0.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q 0° 8° 0° 8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498

Document Number: 71192 www.vishay.com


11-Sep-06 1
Application Note 826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SO-8

0.172
(4.369)
0.028
(0.711)
(6.248)

(3.861)
0.246

0.152
(1.194)
0.047

0.022 0.050
(0.559) (1.270)

Recommended Minimum Pads


Dimensions in Inches/(mm)

Return to Index
Return to Index
APPLICATION NOTE

www.vishay.com Document Number: 72606


22 Revision: 21-Jan-08
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Revision: 01-Jul-2024 1 Document Number: 91000

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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