NEC320 EXPERIMENT NO. 2 ELECT.

1 LABORATORY

Semiconductor Diode
OBJECTIVES:
After the experiment, the learner should be able to

1. Perform a diode test using an ohmmeter.

2. Plot the forward and reverse characteristics curve of a diode.
3. Determine the effect of heat on the diode characteristics.

INTRODUCTORY INFORMATION
Semiconductors are solids whose resistivity lies between those of
electrical conductors and insulators. Transistors, junction diodes, zener
diodes, tunnel diodes, IC, and metallic rectifiers are examples of
semiconductors.
Semiconductors are used in computers, in radio and TV receivers (LED
and LCD), in DVD players, power amplifiers and other electronic products.
Semiconductor devices perform many control functions. They may be
used as rectifiers, amplifiers, detectors, oscillators and switching elements.
Some characteristics which make the semiconductor such an attractive
member of the electronics family are as follows:
1. Semiconductors are solids. There is, therefore, little chance that
elements will vibrate.
2. Semiconductors require little power and radiate little heat. They do
not need warm up just like the vacuum tubes and they easily operate as soon
as the power is being applied.
3. Semiconductors are rugged and may be rendered impervious to
external environmental conditions. Along with their small size these
characteristics allow large circuits to occupy small spaces in the printed circuit
board (PCB) or even when being packaged for commercial applications.
The word diode is a contraction of "di" meaning two and “electrodes”.
It consists of one doped N-type and one doped P-type.
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NEC320 EXPERIMENT NO. 2 ELECT. 1 LABORATORY

The diode is the simplest of semiconductor devices but plays a very

vital role in electronic systems with its characteristics that closely match those
of a simple switch. It is used in a range of applications, extending from the
simplest to very complex systems.

Before examining the construction and characteristics of an actual

device, we first consider the ideal device to provide a basis for comparison.
The ideal diode is a two terminal device having a symbol shown below.

Figure 2.1 Diode and Diode Symbol

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NEC320 EXPERIMENT NO. 2 ELECT. 1 LABORATORY

V-I CHARACTERISTICS OF DIODE

Figure 2.2 Diode Characteristic Curve

Forward Voltage Drop , Vf

Notice that the diode conducts a small current in the forward direction up
to a threshold voltage, 0.3 for germanium and 0.7 for silicon; after that it
conducts as we might expect. The forward voltage drop, V f, is specified at a
forward current, If.

Leakage current
In the reverse direction there is a small leakage current until the reverse
breakdown voltage is reached. This leakage is undesirable; the lower the
better, and is specified at a voltage less than breakdown. Diodes are intended
to operate below their breakdown voltage.

Current Rating
The current rating of a diode is determined primarily by the size of the
diode chip, and both the material and configuration of the package, Average
Current is used, not RMS current. A larger chip and package of high thermal
conductivity are both conducive to a higher current rating.

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NEC320 EXPERIMENT NO. 2 ELECT. 1 LABORATORY

Switching
The switching speed of a diode depends upon its construction and
fabrication. In general the smaller the chip the faster it switches, other things
being equal. The chip geometry, doping levels, and the temperature at
nativity determine switching speeds. The reverse recovery time, trr, is usually
the limiting parameter; trr is the time it takes a diode to switch from on to off.

The very minimal diode specifications are:

(a) Maximum reverse voltage
(b) Rated forward current
(c) Maximum forward voltage drop
(d )Maximum leakage current
(e) Package style
(f) Maximum reverse recovery time

MATERIALS AND EQUIPMENTS NEEDED:

1 – 330 Ω , 1.0 MΩ
1 - 1N4148 signal diode
1 - VOM
1 - Variable DC power supply
1- Soldering iron
1- Breadboard
1- Long nose
#22 solid wire

PROCEDURES
1. Measure the forward and reverse resistance of the diode.

Forward Resistance = _____________ Ω (use Rx1)

Reverse Resistance = _____________ Ω (use Rx10K or the highest)

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NEC320 EXPERIMENT NO. 2 ELECT. 1 LABORATORY

Figure 2.3 Diode Resistance Checking using an Analog Multimeter

2. Construct the forward bias diode circuit as shown in Figure 2.4. Set power
supply to 0V.

Figure 2.4

3. Monitor the forward voltage drop, Vf, across the diode. Slowly increase Vs
to establish 0.45 volts across the diode and record it in Table 1.1 Compute for
the forward current by using Ohm's Law across the resistance.
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4. Repeat step 3 for each voltage listed in Table 1.1

Table 1.1
Vf Vs VR If
(Measured (Computed)
0.45 V 450.12 mV 118.80 ) V 359.86 nA
0.50V 500.82 mV 820.99 V 2. 4869 A
0.55V 555.67 mV 5.6718 mV 17.187 A
0.60V 639. 21 mV 39.207 mV 118. 81 A
0.65V 921 mV 271 mV 821.20 A
0.70V 2573 mV 1. 8730 V 5. 6757 mA
0.75V 13.691 V 12.941 V 39. 215 mA
0.80V 90. 25 V 89.45 V 271. 06 mA
0.90V 4274 V 4.2731 kV 12. 949 A
1.00V 204.5kV 204.5 kV 619. 69 A

5. With the diode forward voltage of 0.75 volts, bring the HOT soldering iron
near the diode. (DO NOT TOUCH THE DIODE WITH THE SOLDERING IRON).
Observe the effect of heat on the forward voltage of the diode. Describe your
observation.
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Figure 2.5 Soldering Iron near the diode

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NEC320 EXPERIMENT NO. 2 ELECT. 1 LABORATORY

6. Connect the reverse bias diode circuit shown in Figure 2.6. Set the supply
voltage to each voltage listed in Table 1.2. Apply Ohm's law to the resistor and
compute for the reverse current in each case. Record in Table 1.2.

Figure 2.6

Table 1.2
Vs VR VD ID
5.0V 10.010 V 5.00 V 10. 010 pA
10.0V 20.010 V 10.00 V 20. 010 pA
15.0V 30.010 V 15.00 V 30. 010 pA

7. Change R with 330 Ω and repeat procedure 6. Record data in Table 1.3.
Table 1.3
Vs VR VD ID
5.0V 3.3033 V 5.00 V 10. 010 pA
10.0V 6.603 V 10.00 V 20. 010 pA
15.0V 9.9033 nV 15.00 V 30. 010 pA

8. With the power supply set to 15 volts, bring the HOT soldering iron near
the diode. (DO NOT TOUCH THE DIODE WITH THE SOLDERING IRON). Observe
the effect of heat on the reverse voltage of the diode. Describe your
observation.
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NEC320 EXPERIMENT NO. 2 ELECT. 1 LABORATORY

QUESTIONS AND PROBLEMS

1. Compare the results in Table 2 and Table 3 and explain.

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2. From procedure 7, what does heat do to the internal resistance of the

diode?
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3. Compute the maximum power dissipation of the diode from Table 1.1
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4. What factors affect the accuracy of the measurements in this experiment?

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NEC320 EXPERIMENT NO. 2 ELECT. 1 LABORATORY

5. How the heat of a soldering iron affects the reverse and forward resistance
of the diode?
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6. What are the limitations, if any, on (a) forward bias and (b) reverse bias?
Were the limitations exceeded in this experiment? Refer to your
measurements to substantiate your answers.
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7. How would you identify the anode of an unmarked diode?

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NEC320 EXPERIMENT NO. 2 ELECT. 1 LABORATORY

EXPERIMENTAL DISCUSSION:
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NEC320 EXPERIMENT NO. 2 ELECT. 1 LABORATORY

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NEC320 EXPERIMENT NO. 2 ELECT. 1 LABORATORY

CONCLUSION:
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NEC320 EXPERIMENT NO. 2 ELECT. 1 LABORATORY

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NEC320 EXPERIMENT NO. 2 ELECT. 1 LABORATORY

REFERENCES:
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INSTRUCTOR’S INITIAL:_______________

DATE: ___________

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