Ex 305

ANALOG ELECTRONICS
EX-305
EXPERIMENT NO-1
AIM:-
To plot and verify the VI characteristics of P-N junction diode.
APPARATUS REQUIRED:-
1. Analog board of AB01.
2. DC power supplies +12V from external source or ST2612 Analog Lab.
3. Digital Multimeter (2 numbers).
CIRCUIT DIAGRAM:-
Circuit used to plot different characteristics of Si diode is shown in figure.
THEORY:-
When a P type semiconductor is suitably joined to N type semiconductor surface is PN junction.

Most semiconductor devices contain one or more PN junction. The PN junction is of great
importance because it is in effect, the control element for semiconductor devices. The potential
difference across a PN junction can be applied in two ways, namely;
LAB MANUAL AND WORK BOOK

1. Forward Bias.
2. Reverse Bias.
Forward Bias:-
When external voltage applied to the junction is in such a direction that it cancels the potential barrier,
thus permitting current flow, it is called Forward Biasing. To apply forward bias, connect positive
terminal of battery to P type and negative terminal to n type as shown in diagram. The applied forward
potential establishes an electric field which acts against the field due to potential barrier. Therefore, the
resultant field is weakened and the barrier high is reduced at the junction. As potential barrier voltage is
very small, therefore a small forward voltage is sufficient to completely eliminate the barrier. Once the
potential barrier is eliminated by the forward voltage, junction resistance becomes almost zero and a
low resistance path is established for the entire circuit. Therefore, current flows in the circuit. This is
called forward current. With forward bias to pn junction, the following points are worth noted.
1. The potential barrier is reduced and at some forward voltage (0.1 to 0.3), it is eliminated altogether.
2. The junction offers low resistance (called forward resistance, RF) to current flow. Current
flows in the circuit due to the establishment of low resistance path.
3. Current flows in the circuit due to the establishment of low resistance path. The magnitude
of current depends upon the forward voltage.

Reverse Biasing:-
When the external voltage applied to the junction is in such a direction that potential barrier is increased, it
is called reverse biasing. To apply bias, connect negative terminal of battery to P type and positive terminal
to n type as shown in diagram. The applied reverse potential establishes an electric field which acts in the
same direction as the field due to potential barrier. Therefore, the resultant field is strengthened and the
barrier high is increased at the junction. The increased potential prevents the flow of charge carriers across
the junction. Thus,a high resistance path is established for the entire circuit and hence the current does not
flow. With reverse bias to pn junction, the following points are worth noted .
The potential barrier is increased.
The junction offers high resistance ( called reverse resistance, RF) to current flow.
No Current flows in the circuit due to the establishment of high resistance path.
PROCEDURE:-
· Connect +12V DC power supplies at their indicated position from external source or
ST2612 Analog Lab.
· To plot forward characteristics proceed as follows.
1. Rotate potentiometer P1 fully in CCW (counter clockwise direction).
2. Connect Ammeter between test point 2 and 8 to measure diode current ID (mA).
3. Connect one voltmeter between test point 1 and 9 to measure voltage VD diode.
4. Switch ‘On’ the power supply.
5. Vary the potentiometer P1 so as to increase the value of diode voltage VD from zero to 1V in
step and measure the corresponding values of diode current ID in an observation Table 1.
6. Plot a curve between diode voltage VD and diode current ID as shown in figure 3 (First
quadrant) using suitable scale with the help of observation Table 1. This curve is the
required forward characteristics of Si diode.

OBSERVATION TABLE:-
S.NO. DIODE VOLTAGE(VD) DIODE CURRENT(Id)
1 0.0V
2 0.1V
3 0.2V
4 0.3V
5 0.4V
6 0.5V
7 0.6V
8 0.7V
9 0.8V
10 0.9V
11 1.0V
Reverse Bias Characteristics:-
Make all the connections as shown in fig using patch cords. Connect negative socket of power
supply to one end of resistance. Connect other end of resistance to anode of PN junction diode &
also to -ve socket of Voltmeter. Connect cathode of PN junction diode to -ve socket of µ A/mA.
Connect +ve socket of power supply to +ve of voltmeter & to +ve of µ A/mA meter.
Select the current meter to 150 µ A range using SPDT.
Switch ON the instrument and set the voltage to 0 volt. Increase the voltage slowly and note down the
corresponding current. As the voltage approaches to 150 µ A, change the current meter range to 15mA
using SPDT switch. Note down the observations table.Plot a graph between voltage and current shown.
· To plot Reverse characteristics of a Si diode proceed as follows.
1. Rotate potentiometer P1 fully in CCW (counter clockwise direction).

2. Connect Ammeter between test point 3 and 8 to measure diode current ID (nA).
3. Connect one voltmeter between test point 1 and 9 to measure voltage VD diode.
5. Vary the potentiometer P1 so as to increase the value of diode voltage VD from zero to 10V in
step and measure the corresponding values of diode current ID in an observation Table 2.
6. Plot a curve between diode voltage VD and diode current ID as shown in figure 3 (third
quadrant) using suitable scale with the help of observation Table 2. This curve is the
required forward characteristics of Si diode.
OBSERVATION TABLE:-
S.NO. DIODE VOLTAGE(VD) DIODE CURRENT(Id)
1 0.0V
2 1.0V
3 2.0V
4 3.0V
5 4.0V
6 5.0V
7 6.0V
8 7.0V
9 8.0V
10 9.0V
11 10.0V

GRAPH:-
PRECAUTIONS:-
1. Connect all electrical connection as per diagram.
2. Checked for any loose contact and if found loose tight it.
3. Handover the instrument kit to Lab tech. properly.

VIVA VOCE
Ques1: What is the cut-off voltage of general type of diode.
Ans: The cut off voltage of general diodes for different types material for silicon=0.7 and
germanium =0.3.
Ques2: What is Intrinsic and Extrinsic Semiconductor ?
Ans: A semiconductor in an extremely pure form is known as Intrinsic Semiconductor. And

when a small amount of suitable impurity is added to a Semiconductor then it is called
impurity or Extrinsic Semiconductor.
Ques3: Draw V-I Characteristics of Diode.
Ans:
The V-I characteristics of Zener diode-
Ques4: Define Energy Bands. And What is Forbidden Energy Gap ?
Ans: The range of energies possessed by an electron in a solid is known as energy band.
The separation b/w the conduction band & valance band on the energy level diagram is
known as forbidden energy gap.
Ques5: What is P-type and N-type Semiconductor ?
Ans: When a small amount of Trivalent impurity is added to a pure semiconductor, it is called
P-type semiconductor. And When a small amount of Pentavalent impurity is added to a
pure semiconductor, it is called N-type semiconductor.

EXPERIMENT NO–2
AIM:-
To study & verify the VI characteristic of Zener diode & Var actor diode.
1. Two continuously variable DC regulated power Supply of 0 -10 V and 0 – 100V.
2. Multimeter.
THEORY:-
When the Reverse bias on a crystal diode is increased, a critical voltage called breakdown voltage
is reached where the reverse current increases sharply to a high value.. Therefore, the breakdown
voltage is sometimes called Zener voltage and the sudden increase in current is known as Zener
current. The breakdown or Zener voltage depends upon the amount of doping. If the diode is
heavily doped, depletion layer will be thin and consequently the breakdown of the junction Will
occur at a lower reverse voltage. On the other hand, a lightly doped diode has a higher breakdown
voltage. When an ordinary crystal is properly doped. So that it has a sharp breakdown voltage, it is
called a Zener diode. With Zener Diode, the following points are worth noted:
1. A Zener diode is like an ordinary diode except that it is properly doped so as to have a
sharp breakdown voltage.
2. A Zener diode is always reverse connected I.e.,it is always reverse bias.
3. A zener diode has a sharp breakdown voltage called Zener voltage Vz.
4. When forward bias,its characteristics are just those of ordinary diodes.
5. The zener diode is not immediately burnt just because it has entered the breakdown region.
As long as the external circuit connected to the diode limits the diode current to less than
burn out value, the diode will not burn out.

ZENER DIODE SYMBOL:-
CIRCUIT DIAGRAM:-
R1
A B
1k
V1 D1
1V
D1N750
PROCEDURE FOR V-I CHARACTERISTICS OF ZENER DIODE:-
Forward Bias Characteristics:-
1. Make all the connections as shown in fig using patch cords. Connect positive socket of
power supply to one end of resistance. Connect other end of resistance to anode of Zener
diode & also to +ve socket of Voltmeter. Connect cathode of Zener diode to +ve socket of µ
A/mA. Connect -ve socket of power supply to -ve of voltmeter & to -ve of µ A/mA meter.
2. Select the voltmeter to 1V range and current meter to 15 mA range using SPDT.
3. Switch ON the instrument and set the voltage to 0 volt.

4. Increase the voltage slowly and note down the corresponding current. As the voltage approaches to
1V change the voltmeter range to 10 V using SPDT switch. Note down the observations in table.
5. Plot a graph between voltage and current as shown.
SR NO. FORWARD VOLTAGE FORWARD CURRENT
Reverse Bias Characteristics:-
1. Make all the connections as shown in fig using patch cords. Connect negative socket of
power supply to one end of resistance.
2. Connect other end of resistance to anode of Zener diode & also to -ve socket of Voltmeter.
3. Connect cathode of Zener diode to -ve socket of µ A/mA. Connect +ve socket of power
supply to +ve of voltmeter & to +ve of µ A/mA meter.
4. Select the current meter to 150 µ A range using SPDT. Switch ON the instrument and set
the voltage to 0 volt.
5. Increase the voltage slowly and note down the corresponding current. As the voltage
6. Approaches to 150 µ A, change the current meter range to 15mA using SPDT switch. Note
down the observations in table.
7. Plot a graph between voltage and current as shown.

OBSERVATION TABLE:-
S. NO. REVERSE REVERSE CURRENT

VOLTAGE
ZENER DIODE CHARACTERITICS:-

VARACTOR DIODE:-
A varactor diode is best explained as a variable capacitor. Think of the depletion region a variable
dielectric. The diode is placed in reverse bias. The dielectric is “adjusted” by bias changes. The var
actor diode can be useful in filter circuits as the adjustable component. The varactor diode symbol
is shown below with a diagram representation.
SYMBOL & CIRCUIT DIAGRAM:-
RESULT:-
The varactor diode is a variable capacitor whose capacitance is inversely proportional to applied
reverse (biased) voltage which can vary by varying biasing voltage.Varactor diode is advantageous
than variable capacitor hence it mostly used in various application for tuning purpose.
PRECAUTIONS:-

VIVA VOICE
Ques1: Which types of diode used in clipping and clamping ckt.
Ans: Zener diodes used in clipping and clamping ckt.
Ques2: Define Zener Diode ?
Ans: A properly doped crystal diode which has a sharp breakdown voltage is known as a Zener diode.
Its is used as a voltage Stabilizer.
Ques3: What is Knee Voltage ?
Ans: It is the forward voltage at which the current through the junction starts to increase rapidly.
Ques4: What is the Tunnel diode ?
Ans: A tunnel diode is a pn junction that is exhibits negative resistance b/w two values of
forward voltages(b/w peak point voltage & valley-point voltage.)
Ques5: What is the Varactor diode ?
Ans: A junction diode which acts as a variable capacitor under changing bias is known as a
var actor diode.

EXPERIMENT NO–3
AIM:-
To study the v-i characteristics of Schottky, tunnel, photo-diode.
1. Two continuously variable DC regulated power Supply of 0 -10 V and 0 – 100V.
2. Multimeter.
THEORY:-
These diodes are designed to have a very fast switching time which makes them a great diode for digital
circuit applications. They are very common in computers because of their ability to be switched on and off
so quickly. The Shockley diode is a four-layer diode while other diodes are normally made with only two
layers. These types of diodes are generally used to control the average power delivered to a load.
Tunnel diode:-
The tunnel diode exhibits negative resistance. It will actually conduct well with low forward bias. With further
increases in bias it reaches the negative resistance range where current will actually go down. This is
achieved by heavily-doped p and n materials that create a very thin depletion region which permits
electrons to “tunnel” thru the barrier region.Tank circuits oscillate but “die out” due to the internal resistance.
A tunnel diode will provide “negative resistance” that overcomes the loses and maintains the oscillations .

Photo diodes:-
Unlike LED’s, photo diodes receive light rather than produce light. The photo diode varies it’s current in
response to the amount of light that strikes it. It is placed in the circuit in reverse bias. As with most
diodes, no current flows when in reverse bias, but when light strikes the exposed junction through a
tiny window, reverse current increases proportional to light intensity (irradiate). Photo diodes all exhibit
a “reverse leakage current” which appears as an inverse variable resistance. Ir radiance causes the
device to exhibit a reduction in the variable resistance characteristic.
PRECAUTIONS:-

VIVA VOCE
Ques1: What is tunnel Diode ?
Ans: A tunnel diode is a pn junction that exhibits negative resistance b/w two values of
forward voltage.
Ques2: What is tunneling effect ?
Ans: The movement of valance electrons from the valance energy band to the conduction
band with little or no applied forward voltage is called tunning effect.
Ques3: What is photo diode ?
Ans: A photo -diode is reverse -biased silicon or germanium pn junction in which reverse
current increases when the junction is exposed to light.
Ques4: What is Optoisolator ?
Ans: An optoisolator is a device that uses light to couple a signal from input to its output.
Ques5: A photo diode is normally forward biased or reverse biased ?
Ans: Reverse Biased.

EXPERIMENT NO–4
AIM:-
To draw the input & Output characteristics of PNP transistor in common emitter configuration.
1. Input resistance.
2. Output resistance.
3. Current gain.
1. Study car.
2. DC power supplies -12V, -5V from externaL
4. 2 mm patch cords.
THEORY:-
Transistor characteristics are the curves, which represent relationship between different DC
currents and voltages of a transistor. These are helpful in studying the operation of a transistor
when connected in a circuit. The three important characteristics of a transistor are:
1. Input characteristic.
2. Output characteristic.
3. Constant current transfer characteristic.
Input Characteristic:-
In common emitter configuration, it is the curve plotted between the input current (IB) versus input
voltage (VEB) for various constant values of output voltage (VEC).
The approximated plot for input characteristic is shown in figure 1. This characteristic reveals that
for fixed value of output voltage VEC, as the base to emitter voltage increases, the emitter current
increases in a manner that closely resembles the diode characteristics.
Output Characteristic:-

This is the curve plotted between the outputs current IC versus output voltage VEC for various
constant values of input current IB.
The output characteristic has three basic region of interest as indicated in figure 2 the active
region, cutoff region and saturation region.
In active region the collector base junction is reverse biased while the base emitter junction is
forward biased. This region is normally employed for linear (undistorted) amplifier. In cutoff region
the collector base junction and base emitter junction of the transistor both are reverse biased. In
this region transistor acts as an ‘Off’ switch.
In saturation region the collector base junction and base emitter junction of the transistor both are
forward biased. In this region transistor acts as an ‘On’ switch.
Constant current transfer Characteristic:-
This is the curve plotted between output collector current IC versus input base current IB for
constant value of output voltage VEC.
The approximated plot for this characteristic is shown in figure .

CIRCUIT DIAGRAM:-
Circuit used to plot different characteristics of transistor is shown in figure .
PROCEDURE:-
Connect -5V and -12V DC power supplies at their indicated position from external source or ST2612.
Analog Lab.
o plot input characteristics proceed as follows:
1. Rotate both the potentiometer P1 and P2 fully in CCW (counter clockwise direction).
2. Connect Ammeter between test point 2 and 3 to measure input base current IB ( A).
3. Short or connect a 2mm patch cord between test point 4 and 5.
4. Connect one voltmeter between test point 1 and ground to measure input voltage VEB and
another voltmeter between test point 6 and ground to measure output voltage VEC.

6. Vary potentiometer P2 and set a value of output voltage VEC at some constant value (1V, 3V,)
PRECAUTIONS:-

VIVA VOCE
Ques1: Define CE ?
Ans: CE-When input is given by base-emitter terminal & output is taken from the collector-emitter
terminal. So, emitter is common for both i/p & o/p.
Ques2: Define CB ?
Ans: CB-When input is given by base-emitter terminal & output is taken from the base-collector
terminal. So, base is common for both i/p & o/p.
Ques3: Define CC ?
Ans: CC-When input is given by base-collector terminal & output is taken from the collector-emitter
terminal. So, collector is common for both i/p & o/p.
Ques4: Give the differences in Transistor & FET ?
Ans: Transistor is Bipolar device & current conduction is done by majority & minority carriers while
the FET's Transistor is Bipolar device & current conduction is done by majority & minority
carriers while the FET''s are Unipolar device in which current conduction is by one type of
carrier i.e. electrons or holes. Unipolar device in which current conduction is by one type of
carrier i.e. electrons or holes.
Ques5: The Number of Depletion layers in a transistor is Four or Two ?
Ans: Two.

EXPERIMENT NO–5
AIM:-
To draw the input & Output characteristics of NPN transistor in common emitter configuration.
1. Input resistance.
2. Output resistance.
3. Current gain.
1. Study card.
2. DC power supplies -12V, -5V from external source.
THEORY:-
Transistor characteristics are the curves, which represent relationship between different DC
currents and voltages of a transistor. These are helpful in studying the operation of a transistor
when connected in a circuit. The three important characteristics of a transistor are:
1. Input characteristic.
2. Output characteristic.
3. Constant current transfer characteristic.
Input Characteristic:-
In common emitter configuration, it is the curve plotted between the input current (IB) versus input
voltage (VEB) for various constant values of output voltage (VEC).
The approximated plot for input characteristic is shown in figure 1. This characteristic reveals that
for fixed value of output voltage VEC, as the base to emitter voltage increases, the emitter current
increases in a manner that closely resembles the diode characteristics.

Output Characteristic:-
This is the curve plotted between the outputs current IC versus output voltage VEC for various
constant values of input current IB.
The output characteristic has three basic region of interest as indicated in figure 2 the active
region, cutoff region and saturation region.
In active region the collector base junction is reverse biased while the base emitter junction is
forward biased. This region is normally employed for linear (undistorted) amplifier. In cutoff region
the collector base junction and base emitter junction of the transistor both are reverse biased. In
this region transistor acts as an ‘Off’ switch.
In saturation region the collector base junction and base emitter junction of the transistor both are
forward biased. In this region transistor acts as an ‘On’ switch.
Constant current transfer Characteristic:-
This is the curve plotted between output collector current IC versus input base current IB for constant
value of output voltage VEC. The approximated plot for this characteristic is shown in figure 3.

CIRCUIT DIAGRAM:-
Circuit used to plot different characteristics of transistor is shown in figure.
PROCEDURE:-
Connect -5V and -12V DC power supplies at their indicated position from external source or ST2612.
Analog Lab.
To plot input characteristics proceed as follows:
1. Rotate both the potentiometer P1 and P2 fully in CCW (counter clockwise direction).
2. Connect Ammeter between test point 2 and 3 to measure input base current IB ( A).
3. Short or connect a 2mm patch cord between test point 4 and 5 Connect one voltmeter
between test point 1 and ground to measure input voltage VEB and another voltmeter
between test point 6 and ground to measure output voltage V EC.
5. Vary potentiometer P2 and set a value of output voltage V EC at some constant value (1V, 3V,)

PRECAUTIONS:-

VIVA VOCE
Ques1: Which types of transistor voltage control device.
Ans: FET,MOSFET transistor are a voltage control device.
Ques2: Is transistor is voltage or current control device ?
Ans: Current control device.

Ques3: The value of amplification Factor for CB is ?
Ans: Less then 1.
Ques4: In a Transistor, the base current is about ........., of emitter current ?
Ans: 5.00%
Ans: Transistor is Bipolar device & current conduction is done by majority & minority carriers while
the FET is a Transistor is Bipolar device & current conduction is done by majority & minority
carriers while the FET are Unipolar device in which current conduction is by one type of
carrier i.e. electrons or holes. Unipolar device in which current conduction is by one type of
carrier i.e. electrons or holes.

EXPERIMENT NO–6
AIM:-
To observed the characteristics of FET (Junction field effect transistor) .
1. Analog board, AB26.
2. DC power supply +12V from external source or ST2612 Analog Lab.
3. Function Generator.
4. Oscilloscope.
5. 2mm patch cords.
6. Digital Multimeter.
THEORY:-
FET is a voltage controlled current device so its characteristics are the curves which Represent
relationship between different DC currents and voltages. These are helpful in studying different
region of operation of a Field effect transistor when connected in a circuit. The two important
characteristics of a Field Effect Transistor are:
1. Output /Drain characteristic.
2. Transfer characteristic.
Output / Drain Characteristics:-
It is the curve plotted between output drain current ID versus output drain to source Voltage VDS
for constant values of input Gate to source voltage VGS as shown in figure 1.

IT CAN BE SUBDIVIDED INTO FOLLOWING FOUR REGIONS:
Ohmic region OA:-
This part of the characteristic is linear indicating that for low values of VDS, current Varies directly
with voltage following Ohm's Law. It means that JFET behaves like an Ordinary resistor till point A
(called knee) is reached.
Curve AB:-
In this region, ID increases at inverse square law rate upto point B which is called Pinch-off point. This
progressive fall in the rate of increase of ID is caused by the Square law increase in the depletion
region at each gate up to point B where the two Regions are closest without touching each other. The
drain to source voltage VDS Corresponding to point B is called pinch-off voltage VPO.
Pinch-off region BC:-
It is also known as saturation region or 'amplifier' region. Here, JFET operates as a Constant-current device
because ID is relatively independent of VDS. It is due to the Fact that as VDS increases channel resistance
also increases proportionally thereby Keeping ID practically constant at IDSS. Drain current in this region is
given by Shockley's equation It is the normal operating region of the JFET when used as an amplifier.
ID = IDSS [1 – (VGS / VPO)2 ] = IDSS [ – (VGS / VGS (off))2 ]
Breakdown region:-
If VDS is increased beyond its value corresponding to point C (called avalanche Breakdown voltage), JFET
enters the breakdown region where ID increases to an Extensive value. This happens because the reversed
biased gate channel PN junction Undergoes avalanche breakdown when small change in VDS produce very

large Change in ID.
JFET characteristics with External Bias:-
Above Figure shows a family of ID versus VDS curves for different values of VGS. It is seen That
as the negative gate bias voltage is increased:Pinch-off voltage VP is reached at a lower value of
VDS than VGS = 0. Value of VDS For breakdown is decreased.
CIRCUIT DIAGRAM:-
Circuit used to plot different characteristics of transistor is shown in figure 4.

PROCEDURE:-
1. Connect +12V variable DC power supply at the indicated position from external source or
ST2612 Analog Lab.
3. Connect maximum 200 mVp-p, 10 KHz sine wave signal at the signal input of AB26 board
and observe the same on oscilloscope CH I.
4. Connect socket ‘a’ with socket ‘b’.
5. Observe the output waveform from “output signal” on oscilloscope CHI or CH II and note
down output voltage (VOUT) peak to peak
6. Note down the value of gain (AV=VOUT /VIN) in the observation table given
7. below.
8. Pull out patch cord from socket ‘a’ and ‘b' and insert red probe of multimeter in
9. socket ‘a’ and black probe in socket ‘b’ and position its dial at DC current measurement.
10. Note down the value of drain current IDQ in the observation table given below.
11. Again connect socket ‘a’ with socket ‘b’. Now keep red probe of multimeter at test point ‘d’
and black probe at test point ‘e’ and position multimeter dial at DC voltage measurement
12. Note down the value of gate–source voltage VGSQ in the observation table given below.
Mark that the value of VGS is negative.
13. Again keep red probe of multimeter at test point ‘c’ and black probe at test point ‘e’ and
position multimeter dial at DC voltage measurement
14. Note down the value of drain–source voltage VDSQ in the observation table given below.
15. Compare it with the value calculated theoretically.
Calculate the error value given by the formula :
Error in value = Theoretical value – Practical value.

OBSERVATION TABLE:-
OUTPUT OUTPUT DRAIN CURRENT ID (MA) AT CONSTANT VALUEOF INPUT
S. NO. VOLTAGE
VOLTAGE
VGS = -3V
VDS VGS = 0V VGS = -1V VGS = -2V
(VOLT)
0.0V
0.1V
0.2V
0.3V
0.4V
0.5V
0.6V
0.7V
0.8V
0.9V

VIVA VOCE
Ques1: What is FET ?
Ans: FET is Field Effect Transistor is a three terminal semiconductor device in which current
conduction is by one type of carrier i.e. electrons or holes.
Ans: Transistor is Bipolar device & current conduction is done by majority & minority carriers
while the FET is Transistor is Bipolar device & current conduction is done by majority &
minority carriers while the FET are Unipolar device in which current conduction is by
one type of carrier i.e. electrons or holes. Unipolar device in which current conduction is
by one type of carrier i.e. electrons or holes.
Ques3: Give the differences in D-MOSFET & E- MOSFET ?
Ans: In the D- MOS it can be operated in both modes depletion or enhancement modes while
in the E-MOS it can be operated only in enhancement mode.
Ques4: What is the classification of MOSFET.
Ans: There are two types of MOSFET classification,1=Enhancement type MOSFET,and

2=Depletion type MOSFET.
Ques5: What is the delay time of FET transistor.
Ans: 2-3ns delay time of FET transistor.

EXPERIMENT NO–7
AIM:-
To study the V-I characteristics of SCR.
1. Power Electronics Board ST2702.
3. Oscilloscope.
THEORY:-
A Silicon Controlled Rectifier (or Semiconductor Controlled Rectifier) is a four layer solid state
device that controls current flow The name “silicon controlled rectifier” is a trade name for the type
of thyristor commercialized at General Electric in 1957.
An SCR can be seen as a conventional rectifier controlled by a gate signal It is a 4-layered 3-terminal device
When the gate to cathode voltage exceeds a certain threshold, the device turns 'on' and conducts current The

operation of a SCR can be understood in terms of a pair of tightly coupled Bipolar Junction
Transistors SCR has three states: Reverse blocking mode, forward blocking mode, and forward
conducting mode Industrially SCRs are applied to produce DC voltages for motors from AC line
voltage Rectifier Half-wave rectifier, full-wave rectifier
Gate Characteristics:-
A Thyristor can be gated or triggered to the ON state by applying a small signal between the gate and the
cathode. The trigger source is a DC voltage and the gate current must be limited by a series resistor.
Typical gate trigger methods are as following:
1) DC trigger .
2) Pulse trigger .

3) AC phase control trigger.
CIRCUIT DIAGRAM:-
The circuit diagram for SCR Triggering circuits is as follows:
PROCEDURE:-
1. Connect the potentiometer points ‘D’ to point ‘d2’ and ‘E’ to point ‘e2’.
2. Connect the SCR points ‘A’ to point ‘a1’, ‘B’ to point ‘b2’ and ‘C’ to point ‘c2’.
3. Rotate the potentiometers ‘P1’ fully in the anticlockwise direction.
5. Connect the oscilloscope probe between the load test point ‘t3’ and ‘t4’ and observe the
Phase angle and voltage.

6. Now, connect the oscilloscope probe across the thyristor and observe thewaveform.
7. Vary the potentiometer slowly; you can see the phase angle variation.
8. Repeat the experiment from step 5 for various angles and plot the graphs.
OBSERVATION TABLE:-
S. NO. LOAD VOLTAGE(V) PHASE ANGLE (Α)
PRECAUTIONS:-

VIVA VOCE
Ques1: Explain the SCR ?

Ans: A silicon controlled rectifier is a semiconductor device that acts as a true electronic
switch. It can change alternating current into direct current & at the same time can
control the amount of power fed to the load.
Ques2: What is the Break over voltage in SCR ?
Ans: Break over voltage: It is the minimum forward voltage,gate being open,at which SCR
starts conducting heavily i.e. turned on.
Ques3: What is the Holding current in SCR ?
Ans: Holding Current: It is the maximum anode current,gate being open,at which SCR is
turned off from ON condition.
Ques4: What is PRV ?
Ans: The Peak Reverse voltage is the maximum reverse voltage(Cathode positive w.r.t.
Anode) that can be applied to an SCR without conducting in the reverse direction.
Ques5: What is Forward current rating ?
Ans: It is the maximum anode current that an SCR is capable of passing without destruction.

EXPERIMENT NO–8
AIM:-
To study the V-I characteristics of IGBT.
1. Power Electronics board ST2701.
2. Digital Multi-meter.
THEORY:-
The insulated gate bipolar transistor (IGBT) combines the positive attributes of BJTs and MOSFETs. BJTs
have lower conduction losses in the ‘On’-state, especially in devices with larger blocking voltages, but have
longer switching times, especially at turn-‘Off’ while MOSFETs can be turned on and off much faster, but
their on-state conduction losses are larger, especially in devices rated for higher blocking voltages. Hence,
IGBTs have lower on-state voltage drop with high blocking voltage capabilities in addition to fast switching
speeds and has become the most favored power device in Industrial application.
C
iC
v
G CE
E
IC
V
GE5
V
GE4
V
GE3
V
GE2
V
GE1
V
02 V CE
The vertical cross sectional structure of an IGBT is shown in Figure 1 having four alternate p-n-p-n layers
with three terminals Emitter, Collector and Gate. A heavily doped p+ substrate has a lightly doped n-type
drift region grown on to it by epitaxial process. Then the p-type emitter is diffused with two subsequent n-
type layers over doping windows. Two silicon dioxide layers are then deposited, and deposition of the metal
forms an interconnected gate as shown in Figure 2 The performance of an IGBT is closer to that of a

BJT rather than a MOSFET. The circuit symbol of an IGBT are shown in the below Figure 2. When
the gate is positive with respect to the emitter and this voltage is beyond the threshold value, an n-
channel is induced in the p-region of a MOSFET. These charge carriers forward bias the base-
emitter junction of the p-n-p transistor and holes are injected into the n-type drift region.
CIRCUIT DIAGRAM:-
Circuit used to plot the characteristics of an IGBT is shown in Figure.
PROCEDURE:-
1. Rotate the potentiometer ‘P1’ fully in clockwise direction and ‘P2’ fully in counter clockwise
direction.
2. Connect Ammeter between point d and e to measure collector current Ic (mA).
3. Connect a 2mm patch cord between point ‘a’ and ‘b’.
4. Connect voltmeter between point c and ground to measure the Gate voltage VGE and
between point f and ground.

6. Vary the potentiometer ‘P1’ in counterclockwise direction to set the gate voltage VGE
(between 4.8V and 5.6V).
7. Vary the potentiometer ‘P2’ in clockwise direction so as to increase the value of collector-emitter
voltage VCE from 0 to 35V in step and measure the corresponding values of collector current Ic
for different constant value of gate voltage VGE in an Observation Table 1.
8. Rotate the potentiometer ‘P2’ fully in the counterclockwise direction and potentiometer ‘P1’
fully in clockwise direction.
9. Repeat the procedure from step 6 for different sets of gate voltage VGE.
10. Plot a curve between collector-emitter voltage current (VCE) and Collector current Ic using suitable
scale with the help of observation Table 1. This curve is the required collector characteristic.
OBSERVATION TABLE:-
S.NO. COLLECTOR COLLECTOPR CURRENTIc AT CONSTENT VALUE OF

VOLTAGE GATE VOLTAGE VGE (VOLT)
VGE=V VGE=V VGE=V
10

PRECAUTIONS:-

VIVA VOCE
Ques1: What is transistor.
Ans: Transistor is a three terminal device,Emitter,Base, Collector.
Ques2: How many types of transistor configurations.
Ans: There are mainly three types of transistor configurations (1) CE configuration (2) CB
configuration (3) CC configuration.
Ques3: Which types of transistor in the form of single junction.
Ans: Only UJT transistor is a single junction.
Ques4: which types of transistor gives a negative resistance region.
Ans: UJT transistor gives a negative resistance regions.
Ques5: Which types of rectifier used in electrical ckt.
Ans: Both types of rectifier are used in electrical ckt but depending upon the types of output
waves needs.

EXPERIMENT NO–9
AIM:-
To study the power MOSFET.
1. Power Electronics Board, PE02.
2. DC power supplies + 15 V and + 35 V.
3. Digital multi-meter.
4. 2mm patch cords.
CIRCUIT DIAGRAM:-
Circuit used to plot different characteristics of MOSFET is shown in figure.

THEORY:-
Parasitic BJT. Held in cutoff by body-source short Integral anti-parallel diode. Formed from parasitic BJT.
Extension of gate metalization over drain drift region. Field plate and accumulation layer functions. Division
of source into many small areas connected electrically in parallel .Maximizes gate width-to-channel length
ratio in order to increase gain. Lightly doped drain drift region. Determines blocking voltage rating. Mobility
also decreases because large values of VGS increase free electron density. At larger carrier densities, free
carriers collide with each other (carrier-carrier scattering) more often than with lattice and mobility
decreases as a result. Mobility decreases, especially via carrier-carrier scattering lead to linear transfer
curve in power devices instead of square law transfer curve of logic level MOSFETs.
source gate conductor

body-source
field oxide
short
gate oxide
+ + +
N N N N+
P (body) P (body)
-
N parasitic i channel
(drift region) BJT
D length
+ integral
N
diode
drain
Power MOSFETs are fabricated in the form of arrays. This means that a single power MOSFET is
in reality a parallel combination of thousands of individual cells, each cell being a MOSFET in
itself. The device has three external terminals, called Drain, Source and Gate. The control voltage
to implement turn ON is applied between the gate and the source terminals. The direction of
forward current flow in an n-channel device is from the drain to the source, through it. The junction
structure one cell of an n-channel device is shown bellow.

MOSFET I-V Characteristics and Circuit Symbols:-
iD [v- V = v ]
GS GS(th) DS
ohmic
V
GS5
active
V
GS4
V
GS3
V
GS2
V
GS1
v
V< V DS
BV
GS GS(th) DSS
PROCEDURE:-
1. Connect +35 V and +15 V DC power supplies at their indicated position from external source.
2. To plot drain characteristics proceed as follows:
3. Rotate both the potentiometer P1 and P2 fully in counter clockwise direction.
4. Connect Ammeter between test point ‘2’ and ‘3’ to measure gate current IG (mA)
between test point ‘4’ and ‘5’ to measure drain current ID(mA).
5. Short or connect a 2mm patch cord between test point ‘4’ and ‘5’.
6. Connect one voltmeter between test point ‘6’ and ground to measure drain voltage VDS
other voltmeter between test point ‘1’ and ground to measure gate voltage VGS.
8. Vary potentiometer P2 and set a value of gate voltage VGS at some constant value (3
V, 3.1 V, 3.2 V)
9. Vary the potentiometer P1 so as to increase the value of drain voltage VDS from zero to
35 V in step and measure the corresponding values of drain current IE for different
constant value gate voltage VGS in an observation table.

10. Rotate potentiometer P1 fully in counter clockwise direction.
11. Repeat the procedure from step 6 for different sets of gate voltage VGS.
12. Plot a curve between drain voltage VGS and drain current 10 using suitable scale with
the help of observation table. This curve is the required drain characteristic.
OBSERVATION TABLE:-
S.NO. DRAIN DRAIN CURRENT ID(ma) AT A CONSTENT VALUE OF GATE VOLTAGE

VOLTAGE
(VDS) VGS=3V VGS=3.1V VGS=3.2V
10
PRECAUTIONS:-

VIVA VOCE
Ques1: What is a device use in power amplifier in the electronic device system.
Ans: The power amplifier device use in power amplification of electronics device ckt system.
Ques2: Which types of diode used in clipping and clamping ckt.
Ans: Zener diodes used in clipping and clamping ckt.
Ques3: What is the cut-off voltage of general type of diode.
Ans: The cut off voltage of general diodes for different types material for silicon=0.7 and
germanium =0.3.
Ques4: Which types of diode to gives the fast response.
Ans: Only Schottky diode to give the very fast response.
Ques5: What is half rectifier.
Ans: A half rectifier to only pass the positive half wave and only one diodes are used.

EXPERIMENT NO–10
AIM:-
To study of weign bridge oscillator and effect on output frequency with variation in RC combination
1. Experiment kit.
2. Connecting probes.
3. DC power supply .
4. 2 mm patch cord .
CIRCUIT DIAGRAM:-
THEORY :-
The Weign Bridge is one of the simplest and best known oscillators and is used extensively in circuits for
audio applications Figure I shows the basic Wain bridge circuit configuration On the positive side This
circuit has only a few components and good frequency stability Because of this simplicity and stability it is

most commonly used audio frequency oscillator The bridge has series RC network in one arm and parallel
RC network in the adjoining arm In the remaining two arms of the bridge resistor R1 and Rf are connected .
The phase angle criterion for oscillation is that the total phase shift around the circuit must be zero
This condition occur es only when the bridge is balanced that is at resonance. The frequency of
oscillation Fo is exactly the resonant frequency of the balanced Wain bridge and is given by
F0 =0.159/RC
PROCEDURE:-
1. Connect +12 v,-12 v DC power supply at their indicated position from external source
2. Connect a 2mm patch cord between test point 1 and H .
3. Switch on the power supply.
4. Vary Rf pot to make gain (Rf/R1)greater than 2.
5. Record the value of output frequency at test point G.
6. Compare measured frequency with theoretically calculated value.
7. Vary the gain pot of 470K to adjust the gain of the amplifier in case of clipped wave form.
8. Switch off the power supply.
9. Connect a 2mm patch cord between test point A and B ,D and E.
10. Repeat the above steps from step 3 to 8.
11.Switch off the power supply.
12. Connect a 2 mm patch cord between test point B and C ,E and F.
13. Repeat the above steps from step 3 to 8.
RESULT:-
Weign bridge oscillator is studied and wave form is observed.

VIVA VOCE
Ques1: What is Weign Bridge oscillator.
Ans: Weign Bridge is one of the simplest and best known oscillators and is used extensively in
circuits for audio applications.
Ques2: What are the RC network in Weign Bridge oscillator.
Ans: The bridge has series RC network in one arm and parallel RC network in the adjoining.
Ques3: What is frequency of oscillation Fo at resonance.
Ans: The frequency of oscillation Fo is exactly the resonant frequency of the balanced Wain bridge
and is given by F0 =0.159/RC.
Ques4: What should be the The phase angle criterion.
Ans: The phase angle criterion for oscillation is that the total phase shift around the circuit must be
zero.
Ques5: What is Knee Voltage ?
Ans: It is the forward voltage at which the current through the junction starts to increase rapidly.

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ANALOG ELECTRONICS

To plot and verify the VI characteristics of P-N junction diode.

1. Analog board of AB01.

2. DC power supplies +12V from external source or ST2612 Analog Lab.

3. Digital Multimeter (2 numbers).

Circuit used to plot different characteristics of Si diode is shown in figure.

When a P type semiconductor is suitably joined to N type semiconductor surface is PN junction.

LAB MANUAL AND WORK BOOK

LAB MANUAL AND WORK BOOK

The potential barrier is increased.

· To plot forward characteristics proceed as follows.

1. Rotate potentiometer P1 fully in CCW (counter clockwise direction).

4. Switch ‘On’ the power supply.

LAB MANUAL AND WORK BOOK

S.NO. DIODE VOLTAGE(VD) DIODE CURRENT(Id)

Reverse Bias Characteristics:-

Select the current meter to 150 µ A range using SPDT.

· To plot Reverse characteristics of a Si diode proceed as follows.

1. Rotate potentiometer P1 fully in CCW (counter clockwise direction).

LAB MANUAL AND WORK BOOK

4. Switch ‘On’ the power supply.

S.NO. DIODE VOLTAGE(VD) DIODE CURRENT(Id)

LAB MANUAL AND WORK BOOK

1. Connect all electrical connection as per diagram.

3. Handover the instrument kit to Lab tech. properly.

LAB MANUAL AND WORK BOOK

Ques1: What is the cut-off voltage of general type of diode.

Ques2: What is Intrinsic and Extrinsic Semiconductor ?

Ans: A semiconductor in an extremely pure form is known as Intrinsic Semiconductor. And

Ques3: Draw V-I Characteristics of Diode.

The V-I characteristics of Zener diode-

Ques4: Define Energy Bands. And What is Forbidden Energy Gap ?

Ques5: What is P-type and N-type Semiconductor ?

LAB MANUAL AND WORK BOOK

1. Two continuously variable DC regulated power Supply of 0 -10 V and 0 – 100V.

2. A Zener diode is always reverse connected I.e.,it is always reverse bias.

4. When forward bias,its characteristics are just those of ordinary diodes.

LAB MANUAL AND WORK BOOK

PROCEDURE FOR V-I CHARACTERISTICS OF ZENER DIODE:-

Forward Bias Characteristics:-

3. Switch ON the instrument and set the voltage to 0 volt.

LAB MANUAL AND WORK BOOK

5. Plot a graph between voltage and current as shown.

SR NO. FORWARD VOLTAGE FORWARD CURRENT

Reverse Bias Characteristics:-

7. Plot a graph between voltage and current as shown.

LAB MANUAL AND WORK BOOK

S. NO. REVERSE REVERSE CURRENT

ZENER DIODE CHARACTERITICS:-

LAB MANUAL AND WORK BOOK

SYMBOL & CIRCUIT DIAGRAM:-

1. Connect all electrical connection as per diagram.

3. Handover the instrument kit to Lab tech. properly.

LAB MANUAL AND WORK BOOK

Ques1: Which types of diode used in clipping and clamping ckt.

Ans: Zener diodes used in clipping and clamping ckt.

Ques2: Define Zener Diode ?

Its is used as a voltage Stabilizer.

Ques3: What is Knee Voltage ?