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    Shivalik Classes

    Physics for IITJEE and NEET | Yashasvi 2024


    Due Date :18/12/2024
    Senmiconductors_01 | Board Level
    1. If Ge is doped with As what are the majority charge carriers?
    2. What is the element doped in Si to obtain n-type semiconductor?
    3. If Si is doped with a pentavalent element. Find the energy required to set the additional electron free.
    4. If Ge is doped with a pentavalent element. Find the energy required to set the additional electron
    free.
    5. During formation of a p-n junction what are the direction of holes and electrons.
    6. Explain how does the barrier height and depletion region changes when p-n junction is subjected to
    reverse biasing.
    7. Suppose a pure Si crystal has 𝟓 × 𝟏𝟎𝟐𝟖 atoms 𝑚−3 . It is doped by 1 ppm concentration of boron.
    Calculate the concentration of holes and electrons, given that 𝒏𝒊 = 𝟏 · 𝟓 × 𝟏𝟎𝟏𝟔 𝒎−𝟑 . Is the doped
    crystal n-type or p-type ?
    8. Plot a graph showing the variation of current with voltage for the material GaAs. On the graph, mark
    the region where
    (a) resistance is negative, and
    (b) Ohm’s Law is obeyed
    9. Case Based Question
    Junction Diode as a Rectifier:
    The process of conversion of an ac voltage into a dc voltage is called rectification and the device
    which performs this conversion is called a rectifier. The characteristics of a p-n junction diode reveal
    that when a p-n junction diode is forward biased, it offers a low resistance and when it is reverse
    biased, it offers a high resistance. Hence, a p-n junction diode conducts only when it is forward
    biased. This property of a p-n junction diode makes it suitable for its use as a rectifier. Thus, when
    an ac voltage is applied across a p-n junction, it conducts only during those alternate half cycles for
    which it is forward biased. A rectifier which rectifies only half cycle of an ac voltage is called a half-
    wave rectifier and one that rectifies both the half cycles is known as a full-wave rectifier.
    a. If the root mean square value of an alternating voltage applied to a full-wave rectifier is V0/√2.
    Then find the root mean square value of the rectified output voltage.
    b. Draw a circuit diagram for half wave rectifier.
    c. An alternating voltage of frequency of 50 Hz is applied to a half-wave rectifier. Then find the
    ripple frequency of the output wave.
    d. A signal, as shown in the figure, is applied to a p-n junction diode. Identify the output across
    resistance RL

    10. With the help of a circuit diagram, explain the working of a p-n junction diode as a full wave rectifier.
    Draw its input and output waveforms.

    Shivalik Classes | P-252 Second Floor, Shivalik Nagar, Haridwar | web: www.shivalikclasses.com | Mob: 9410179453
    Shivalik Classes
    Physics for IITJEE and NEET | Yashasvi 2024
    11. Draw the circuit diagrams for obtaining the V I characteristics of a p-n junction diode. Explain briefly
    the salient features of the V-I characteristics in (i) forward biasing, and (ii) reverse biasing.
    12. On the basis of energy band diagrams, distinguish between (i) an insulator, (ii) a semiconductor, and
    (iii) a conductor.
    13. At a given temperature, the number of intrinsic charge carriers in a semi-conductor is 2 × 1010 𝑐𝑚−3 .
    It is doped with pentavalent impurity atom. As a result, the number of holes in it becomes
    8 × 103 𝑐𝑚−3. Find the number of electrons in the semiconductor.
    14. An ac voltage of 𝑉 = 0.5 sin(100𝜋𝑡) 𝑣𝑜𝑙𝑡 is applied, in turn, across a half wave rectifier. Find the
    frequency of the output voltage. What will be the output frequency if the voltage is applied across a
    full wave rectifier?
    15. Suppose a pure Si crystal has 𝟓 × 𝟏𝟎𝟐𝟖 atoms 𝑚−3 . It is doped by 1 ppm concentration of antimony.
    If the concentration of holes in the doped crystal is found to be 𝒏𝒊 = 𝟒 · 𝟓 × 𝟏𝟎𝟗 𝒎−𝟑 . Find the
    concentration of intrinsic charge carriers in Si crystal.?
    16. Explain the characteristics of a p-n junction diode that makes it suitable for its use as a rectifier.
    17. Explain the following
    a. A doped semiconductor is electrically neutral.
    b. In a p-n junction under equilibrium, there is no net current.
    c. In a diode, the reverse current is practically not dependent on the applied voltage.
    18. What are the important considerations for choosing dopants for Silicon or Germanium? Justify your
    answer.
    19. Explain the formation of energy bands in solids and hence define conduction band and valence band.
    20. Differentiate between conductor, semi-conductor and insulator based on the Ohm’s law.

    All the best | Rahul Bhaiya

    Shivalik Classes | P-252 Second Floor, Shivalik Nagar, Haridwar | web: www.shivalikclasses.com | Mob: 9410179453

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