BUH1215

 BUH1215
HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR
■ STMicroelectronics PREFERRED
SALESTYPE
■ HIGH VOLTAGE CAPABILITY
■ VERY HIGH SWITCHING SPEED
APPLICATIONS:
■ HORIZONTAL DEFLECTION FOR COLOUR
TV AND MONITORS 3
2
1
DESCRIPTION
The BUH1215 is manufactured using
Multiepitaxial Mesa technology for cost-effective TO-218
high performance and uses a Hollow Emitter
structure to enhance switching speeds.
The BUH series is designed for use in horizontal
deflection circuits in televisions and monitors.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Uni t
V CBO Collector-Base Voltage (I E = 0) 1500 V
V CEO Collector-Emitter Voltage (IB = 0) 700 V
V EBO Emitter-Base Voltage (IC = 0) 10 V
IC Collector Current 16 A
I CM Collector Peak Current (tp < 5 ms) 22 A
IB Base Current 9 A
I BM Base Peak Current (tp < 5 ms) 12 A
o
P t ot Total Dissipation at Tc = 25 C 200 W
o
T stg St orage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
January 1999 1/7

BUH1215
THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-case Max 0.63 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CES Collector Cut-off V CE = 1500 V 0.2 mA
o
Current (V BE = 0) V CE = 1500 V Tj = 125 C 2 mA
I EBO Emitter Cut-off Current V EB = 5 V 100 µA
(I C = 0)
V CEO(sus) Collector-Emitter I C = 100 mA 700 V
Sustaining Voltage
V EBO Emitter-Base Voltage I E = 10 mA 10 V
(I C = 0)
V CE(sat )∗ Collector-Emitter I C = 12 A IB = 2.4 A 1.5 V
Saturation Voltage
V BE(s at)∗ Base-Emitt er I C = 12 A IB = 2.4 A 1.5 V
Saturation Voltage
h F E∗ DC Current Gain I C = 12 A VCE = 5 V 7 10 14
o
I C = 12 A VCE = 5 V Tj = 100 C 5
RESISTIVE LO AD V CC = 400 V I C = 12 A
ts Storage Time I B1 = 2 A I B2 = -6 A 1.5 µs
tf Fall Time 110 ns
INDUCTIVE LO AD I C = 12 A f = 31250 Hz
ts Storage Time I B1 = 2 A I B2 = -1.5 A 4 µs
tf Fall Time  π 6 220 ns
V c eflybac k = 1050 sin  10  t V
5 
INDUCTIVE LO AD IC = 6 A f = 64 KHz
ts Storage Time I B1 = 1 A V BE(off ) = -2 A 3.5 µs
tf Fall Time π  180 ns
V c eflybac k = 1200 sin  106 t V
 5 
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area Thermal Impedance
2/7
BUH1215
Derating Curve DC Current Gain
Collector Emitter Saturation Voltage Base Emitter Saturation Voltage
Power Losses at 64 KHz Switching Time Inductive Load at 64 KHz

(see figure 2)
3/7
BUH1215
Reverse Biased SOA
BASE DRIVE INFORMATION

In order to saturate the power switch and reduce choosing the optimum negative drive. The test
conduction losses, adequate direct base current circuit is illustrated in figure 1.
IB1 has to be provided for the lowest gain hFE at The values of L and C are calculated from the
100 oC (line scan phase). On the other hand, following equations:
negative base current IB2 must be provided the 1 1
transistor to turn off (retrace phase). L (IC)2 = C (VCEfly)2
2 2
Most of the dissipation, especially in the 1
deflection application, occurs at switch-off so it is ω = 2 πf =

√ L C
essential to determine the value of IB2 which
Where IC = operating collector current, VCEfly=
minimizes power losses, fall time tf and,
flyback voltage, f= frequency of oscillation during
consequently, Tj. A new set of curves have been
retrace.
defined to give total power losses, ts and tf as a
function of IB1 at 64 KHz scanning frequencies for
4/7
BUH1215
Figure 1: Inductive Load Switching Test Circuits.
Figure 2: Switching Waveforms in a Deflection Circuit
5/7
BUH1215
TO-218 (SOT-93) MECHANICAL DATA
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 4.9 0.185 0.193
C 1.17 1.37 0.046 0.054
D 2.5 0.098
E 0.5 0.78 0.019 0.030
F 1.1 1.3 0.043 0.051
G 10.8 11.1 0.425 0.437
H 14.7 15.2 0.578 0.598
L2 – 16.2 – 0.637
L3 18 0.708
L5 3.95 4.15 0.155 0.163
L6 31 1.220
R – 12.2 – 0.480
Ø 4 4.1 0.157 0.161
E
A
C
L5 L6
L3
L2
G
H
¯
F
R 1 2 3 P025A
6/7
BUH1215
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
 1999 STMicroelectronics – Printed in Italy – All Rights Reserved

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7/7
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 BUH1215

HIGH VOLTAGE FAST-SWITCHING

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

January 1999 1/7

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area Thermal Impedance

Derating Curve DC Current Gain

Collector Emitter Saturation Voltage Base Emitter Saturation Voltage

Power Losses at 64 KHz Switching Time Inductive Load at 64 KHz

Reverse Biased SOA

BASE DRIVE INFORMATION

Figure 1: Inductive Load Switching Test Circuits.

Figure 2: Switching Waveforms in a Deflection Circuit

TO-218 (SOT-93) MECHANICAL DATA

A 4.7 4.9 0.185 0.193

C 1.17 1.37 0.046 0.054

E 0.5 0.78 0.019 0.030

F 1.1 1.3 0.043 0.051

G 10.8 11.1 0.425 0.437

H 14.7 15.2 0.578 0.598

L5 3.95 4.15 0.155 0.163

Ø 4 4.1 0.157 0.161

 1999 STMicroelectronics – Printed in Italy – All Rights Reserved

Copyright © Each Manufacturing Company.

All Datasheets cannot be modified without permission.

This datasheet has been download from :

100% Free DataSheet Search Site.

Fast Search System.

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