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    BiCMOS Technology

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    keyareddykarthi

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    BiCMOS Technology

    Uploaded by

    keyareddykarthi
    8 views9 pages

    Original Title

    4. BiCMOS Technology

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    8 views9 pages

    BiCMOS Technology

    Uploaded by

    keyareddykarthi

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    © All Rights Reserved
    Download as PPT, PDF, TXT or read online from Scribd
    Download as ppt, pdf, or txt
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    Bi-CMOS Technology

     Bi-polar transistors provide higher gain.


     The deficiency of MOS technology lies in the limited load
    driving capabilities of MOS transistors. This is due to the
    limited current sourcing and current abilities associated
    with both p and n transistors.
     Bi-CMOS gates may be an affecting way of speeding up
    VLSI circuits.
    Bi-CMOS Inverter
     Two bipolar transistors (T3 and T4), one nMOS and one pMOS transistor
    (both enhancement-type devices)
     The MOS switches perform the logic function & bipolar transistors drive
    output loads

    Simplified BiCMOS Invereter


    Operation:
    Vin = 0
     T1 is off. Therefore T3 is non-conducting

     T2 ON - supplies current to base of T4

     T4 base voltage set to Vdd.

     T4 conducts & acts as current source to charge load CL towards Vdd.

     Vout rises to Vdd

    Vin = 1
     T2 is off. Therefore T4 is non-conducting.

     T1 is on and supplies current to the base of T3

     T3 conducts & acts as a current sink to discharge load CL towards 0V.

     Vout falls to 0V

     Inverter has high drive capability but occupies a relatively small area.
    Comparisons between CMOS and Bipolar
    Technologies

    CMOS Technology Bipolar Technology

    Low static power dissipation High power dissipation

    High input impedance Low input impedance

    Scalable threshold voltage ……………..

    High noise margin Low voltage swing logic

    High packing density Low packing density


    CMOS Technology Bipolar Technology

    High delay sensitivity to Low delay sensitivity to


    load load

    Low output drive current High output drive current

    Low gm High gm

    Bidirectional capability Essentially unidirectional

    A near ideal switching ……………...


    device
    Bi-CMOS Fabrication
     The production of npn bipolar transistors with good performance
    characteristics can be achieved by extending the standard n-well CMOS
    processing to include further masks to add two additional layers such as
    the n+subcollector and p+ base layers.

     The npn transistor is formed in an n- well and the additional p+ base region
    is located in the well to form the p-base region of the transistor.

     The second additional layer, the buried n+subcollector (BCCD), is added to


    reduce the n-well (collector) resistance and thus improve the quality of the
    bipolar transistor.

     The arrangement of BiCMOS npn transistor is shown in below fig.


    Bi-CMOS Fabrication

    Arrangement of BiCMOS npn transistor


    N-well BiCMOS fabrication steps:
    Applications of BiCMOS
     Full custom ICs
     ALU’s, Barrel Shifters
     SRAM, DRAM
     Microprocessor, Controller
     Semi custom ICs
     Register, Flip-flop ,Standard cells
     Adders, mixers, ADC, DAC
     Gate arrays
     Flash A/D Converters

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