Lec10 Cmos

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Faculty of Engineering

ECE 334: Electronic Circuits

Lecture 10:
Digital CMOS Circuits

CMOS Technology
Complementary MOS, or CMOS, needs both
PMOS and NMOS FET devices for their logic
gates to be realized
The concept of CMOS was introduced in 1963
by Frank Wanlass and Chi-Tang Sah of Fairchild
did not become common until the 1980s as
NMOS microprocessors were dissipating as much
as 50W and alternative design techniques were
needed

CMOS still dominates digital IC design today

Properties of NMOS and CMOS Logic


Gates
No current flows through the gate unless the input signal
is changing
High input impedance
High fan-out

Sandwich structure of MOS transistor creates capacitor


between the gate and substrate
High input capacitance
Slows transition time
Limits fan-out or switching speed

NMOS dissipates power in low output state


CMOS gate only dissipates power when it is changing state
The faster a CMOS gate switches the more power it dissipates, so
there is a tradeoff between speed and power

Why CMOS is Better


Low DC Power Consumption
Abrupt & well defined Voltage transfer
Characteristic
Noise Immunity due to Low impedance between
logic levels and Supply/Gnd.
Symmetry between Tfall & Trise
High Density: Si real estate Yield Cost
Highly Integrated Active & High input
Impedance Composition equality
No real trade off between the above

NMOS Logic
Negative charge carriers (electrons)
Positive biasing voltage at gate

CMOS Logic
Transistors come in complementary pairs

CMOS Inverter
CMOS gates are built around
the technology of the basic
CMOS inverter:
Vdd
PMOS
in
in

out

out
NMOS

Symbol
Circuit

Basic CMOS Logic Technology


Based on the fundamental
inverter circuit at right
Transistors (two) are
enhancement mode MOSFETs
N-Channel with its source
grounded
P-Channel with its source
connected to +V

Input: gates connected


together
Output: drains connected

Vdd
s
PMOS
d
out

in
d
g

NMOS
s

CMOS Inverter - Operation


When input A is grounded (logic 0),
the N-Channel MOSFET is unbiased,
and therefore has no channel
enhanced within itself. It is an open
circuit, and therefore leaves the
output line disconnected from ground.
At the same time, the P-Channel
MOSFET is forward biased, so it has a
channel enhanced within itself,
connecting the output line to the +VDD
supply. This pulls the output up to
+VDD (logic 1).

VDD
Charge

A
Open

CMOS Inverter - Operation


When input A is at +VDD (logic 1),
the P-channel MOSFET is off and
the N-channel MOSFET is on, thus
pulling the output down to
ground (logic 0). Thus, this circuit
correctly performs logic inversion,
and at the same time provides
active pull-up and pull-down,
according to the output state.

VDD

VDD
Open
Out

A
Discharge

CMOS Inverter - Operation


Vout

Since the gate is essentially an


open circuit it draws no current,
and the output voltage will be
equal to either ground or to the
power supply voltage, depending
on which transistor is conducting.

VDD

VDD

indeterminant range

Vin

CMOS Inverter A Switch Model

a)
b)
c)

Circuit schematic for a CMOS inverter


Simplified operation model with a high input applied
Simplified operation model with a low input applied

Static Characteristics of the CMOS


Inverter Switch Model
The figure shows the
two modes of static
operation with the
circuit and simplified
models
Logic 1 (a) and (b)
Logic 0 (c) and (d)

Notice that VH = 5V
and VL = 0V, and that
ID = 0A which means
that there is no static
power dissipation

CMOS Inverter Operation


Summarizing:
When vI is pulled high (VDD), the PMOS
inverter is turned off, while the NMOS is
turned on pulling the output down to GND
When vI is pulled low (GND), the NMOS
inverter is turned off, while the PMOS is
turned on pulling the output up to VDD

Propagation Delay Estimate

The two modes of capacitive discharging and charging that


contribute to propagation delay

Fan-Out in CMOS Circuits


While the fan-out of CMOS gates is affected by current
limits, the fan-out of CMOS gates driving CMOS gates is
enormous since the input currents of CMOS gates is very
low.
Why are the input currents low?

On the other hand the high capacitance of CMOS gate inputs


means that the capacitive load on a gate driving CMOS gates
increases with fan-out.
This increased capacitance limits switching speeds and is a far more
significant limit on the maximum fan-out.

Complementary CMOS
Complementary CMOS logic gates
pMOS pull-up network
nMOS pull-down network
a.k.a. static CMOS

pMOS
pull-up
network

inputs
output
nMOS
pull-down
network

Pull-up OFF

Pull-up ON

Pull-down OFF Z (float)

Pull-down ON

X (crowbar)

Complementary CMOS

To build a logic gate we need to build two switch networks:

PUN

PDN

Conduction Complement
Complementary CMOS gates always
produce 0 or 1
Ex: NAND gate
Series nMOS: Y=0 when both inputs are 1
Thus Y=1 when either input is 0
A
Requires parallel pMOS

Rule of Conduction Complements

Pull-up network is complement of pull-down


parallel series, series parallel

CMOS Gate Design


Work out the
values for both
the push and
pull networks
Compare them
What is the
result?

CMOS Gate Design


A 2-input CMOS NAND gate

CMOS Gate Design


Work out the
values for both
the push and
pull networks
Compare them
What is the
result?

CMOS Gate Design


A 2-input CMOS NOR gate

CMOS Gate Design


A 4-input CMOS NOR gate
A
B
C
D
Y

NAND and NOR are Popular


Logical inversion comes free
as a result an inverting gate needs smaller number of transistors compared
to the non-inverting one

In CMOS (and in most other logic families)


the simples gates are inverters
the next simplest are NAND and NOR gates

Compound Gates
Lets take a
look at a
gate that
implements
a more
complex
function

Compound Gates
Compound gates can do any inverting function
Ex: Y = A B +C D
A

(a)

(b)

B C

(c)

(d)

A
B
C
D

(e)

(f)

Example: O3AI

Y = ( A + B + C) D

A
B
C

D
Y
D

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