Lec10 Cmos
Lec10 Cmos
Lec10 Cmos
Lecture 10:
Digital CMOS Circuits
CMOS Technology
Complementary MOS, or CMOS, needs both
PMOS and NMOS FET devices for their logic
gates to be realized
The concept of CMOS was introduced in 1963
by Frank Wanlass and Chi-Tang Sah of Fairchild
did not become common until the 1980s as
NMOS microprocessors were dissipating as much
as 50W and alternative design techniques were
needed
NMOS Logic
Negative charge carriers (electrons)
Positive biasing voltage at gate
CMOS Logic
Transistors come in complementary pairs
CMOS Inverter
CMOS gates are built around
the technology of the basic
CMOS inverter:
Vdd
PMOS
in
in
out
out
NMOS
Symbol
Circuit
Vdd
s
PMOS
d
out
in
d
g
NMOS
s
VDD
Charge
A
Open
VDD
VDD
Open
Out
A
Discharge
VDD
VDD
indeterminant range
Vin
a)
b)
c)
Notice that VH = 5V
and VL = 0V, and that
ID = 0A which means
that there is no static
power dissipation
Complementary CMOS
Complementary CMOS logic gates
pMOS pull-up network
nMOS pull-down network
a.k.a. static CMOS
pMOS
pull-up
network
inputs
output
nMOS
pull-down
network
Pull-up OFF
Pull-up ON
Pull-down ON
X (crowbar)
Complementary CMOS
PUN
PDN
Conduction Complement
Complementary CMOS gates always
produce 0 or 1
Ex: NAND gate
Series nMOS: Y=0 when both inputs are 1
Thus Y=1 when either input is 0
A
Requires parallel pMOS
Compound Gates
Lets take a
look at a
gate that
implements
a more
complex
function
Compound Gates
Compound gates can do any inverting function
Ex: Y = A B +C D
A
(a)
(b)
B C
(c)
(d)
A
B
C
D
(e)
(f)
Example: O3AI
Y = ( A + B + C) D
A
B
C
D
Y
D