MPS2222A: Features

MPS2222A
New Product
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistor (NPN)
TO-226AA (TO-92)
0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6)
Features
NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. On special request, this transistor is also manufactured in the pin configuration TO-18. This transistor is also available in the SOT-23 case with the type designation MMBT2222A.
Mechanical Data
Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk 5K per container, 20K/box E7/4K per Ammo mag., 20K/box
max. 0.022 (0.55) 0.098 (2.5)

Dimensions in inches and (millimeters)
Bottom View
Maximum Ratings & Thermal Characteristics

Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Power Dissipation TA = 25C Derate above 25C TC = 25C Derate above 25C Symbol VCBO VCEO VEBO IC Ptot Ptot RJA RJC Tj TS
Ratings at 25C ambient temperature unless otherwise specified.
Value 75 40 6.0 600 625 5.0 1.5 12 200 83.3 150 55 to +150
Unit V V V mA mW mW/C W mW/C C/W C/W C C
Thermal Resistance Junction to Ambient Air Thermal Resistance Junction to Case Junction Temperature Storage Temperature Range
Document Number 88231 10-May-02
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MPS2222A
Electrical Characteristics (T
Parameter
= 25C unless otherwise noted)
Symbol
Test Condition VCE = 10 V, IC = 0.1 mA VCE = 10 V, IC = 1 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 10 mA TA = -55C VCE = 10 V, IC = 150 mA(1) VCE = 1.0 V, IC = 150 mA(1) VCE = 10 V, IC = 500 mA(1) IC = 10 A, IE = 0 IC = 10 mA, IB = 0 IE = 10 A, IC = 0 IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA VEB = 3 V, VCE = 60 V VCB = 60 V, IE = 0 VCB = 50V,IE =0,TA =125C VEB = 3 V, IC = 0 VCE = 60 V, VEB = 3.0 V VCE = 10 V, IC = 1 mA, f = 1 kHz VCE = 10 V, IC = 10 mA, f = 1 kHz VCE = 10 V, IC = 1 mA, f = 1 kHz VCE = 10 V, IC = 10 mA, f = 1 kHz
Min 35 50 75 35 100 50 40 75 40 6.0 0.6 2.0 0.25 300
Typ
Max 300 0.3 1.0 1.2 2.0 10 0.01 10 100 20 8.0
Unit
DC Current Gain
hFE
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Base Cut-off Current
(1)
V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBEsat ICEV ICBO IEBO IBL
V V V V V nA A nA nA
Input Impedance
hie
k 1.25 8 10-4 4 10 8.0 25

-4
Voltage Feedback Ratio
hre
Current Gain-Bandwidth Product Output Capacitance Input Capacitance

Note: (1) Pulse test: pulse width 300 s, cycle 2%
fT COBO CIBO
VCE = 20 V, IC = 20 mA f = 100 MHz VCB = 10 V, f = 1 MHz, IE = 0 VEB = 0.5 V, f = 1 MHz, IC = 0
MHz pF pF
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MPS2222A
Electrical Characteristics (T
Parameter
= 25C unless otherwise noted)
Symbol
Test Condition VCE = 10 V, IC = 1 mA, f = 1 kHz VCE = 10 V, IC = 10 mA, f = 1 kHz VCE = 10 V, IC = 1 mA, f = 1 kHz VCE = 10 V, IC = 10 mA, f = 1 kHz
Min 5.0 25 50 75
Typ
Max 35
Unit S
Output Admittance
hoe
200 300 375 150 4.0 10 25 225 60 ps dB ns ns ns ns
Small Signal Current Gain
hfe
Collector Base Time Constant Noise Figure Delay Time (see Fig. 1) Rise Time (see Fig. 1) Storage Time (see Fig. 2) Fall Time (see Fig. 2)
rbCC NF td tr ts tf
IE = 20 mA, VCB = 20 V, f = 31.8 MHz VCE = 10 V, IC = 100 A, RS = 1 k, f = 1 kHz IB1 = 15 mA, IC = 150 mA VCC = 30 V VBE = 0.5 V IB1 = 15 mA, IC = 150 mA VCC = 30 V VBE = 0.5 V IB1 = IB2 =15 mA, IC =150 mA VCC = 30 V IB1 = IB2 = 1 mA, IC = 10 mA VCC = 30 V
Switching Time Equivalent Test Circuit

Figure 1 - Turn-On Time
1.0 to 100 s, DUTY CYCLE 2% +16 V 0 -2 V < 2 ns 1k C S* < 10 pF Scope rise time < 4ns *Total shunt capacitance of test jig, connectors and oscilloscope +30V 200 +16 V 0 -14 V < 20 ns -4 V 1k C S* < 10 pF
Figure 2 - Turn-Off Time

1.0 to 100 s, DUTY CYCLE 2% +30V 200
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This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

MPS2222A: Features

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MPS2222A

Small Signal Transistor (NPN)

max. 0.022 (0.55) 0.098 (2.5)

Maximum Ratings & Thermal Characteristics

Ratings at 25C ambient temperature unless otherwise specified.

Unit V V V mA mW mW/C W mW/C C/W C/W C C

Document Number 88231 10-May-02

= 25C unless otherwise noted)

Min 35 50 75 35 100 50 40 75 40 6.0 0.6 2.0 0.25 300

Max 300 0.3 1.0 1.2 2.0 10 0.01 10 100 20 8.0

V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBEsat ICEV ICBO IEBO IBL

k 1.25 8 10-4 4 10 8.0 25

Voltage Feedback Ratio

Current Gain-Bandwidth Product Output Capacitance Input Capacitance

VCE = 20 V, IC = 20 mA f = 100 MHz VCB = 10 V, f = 1 MHz, IE = 0 VEB = 0.5 V, f = 1 MHz, IC = 0

Document Number 88231 10-May-02

= 25C unless otherwise noted)

200 300 375 150 4.0 10 25 225 60 ps dB ns ns ns ns

Small Signal Current Gain

Switching Time Equivalent Test Circuit

Figure 2 - Turn-Off Time

Document Number 88231 10-May-02

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