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    Technical Data: Unitized Dual NPN Silicon Transistor

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    Eynar Jose Atahuichi Quisbert
    This document provides technical specifications for a unitized dual NPN silicon transistor. The maximum ratings include collector-emitter voltage up to 60V, collector-base voltage up to 100V, and collector current up to 500mA. Electrical characteristics at 25°C include a minimum collector-emitter breakdown voltage of 80V, minimum gain of 25, and maximum saturation voltages of 0.3V and 0.9V. Dynamic characteristics include a minimum short-circuit forward current transfer ratio of 3 at 20MHz and maximum input and output capacitances of 16pF and 85pF from 100kHz to 1MHz.

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    Download as PDF, TXT or read online from Scribd

    Technical Data: Unitized Dual NPN Silicon Transistor

    Uploaded by

    Eynar Jose Atahuichi Quisbert
    25 views2 pages
    This document provides technical specifications for a unitized dual NPN silicon transistor. The maximum ratings include collector-emitter voltage up to 60V, collector-base voltage up to 100V, and collector current up to 500mA. Electrical characteristics at 25°C include a minimum collector-emitter breakdown voltage of 80V, minimum gain of 25, and maximum saturation voltages of 0.3V and 0.9V. Dynamic characteristics include a minimum short-circuit forward current transfer ratio of 3 at 20MHz and maximum input and output capacitances of 16pF and 85pF from 100kHz to 1MHz.

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    2n2060

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    This document provides technical specifications for a unitized dual NPN silicon transistor. The maximum ratings include collector-emitter voltage up to 60V, collector-base voltage up to 100V, and collector current up to 500mA. Electrical characteristics at 25°C include a minimum collector-emitter breakdown voltage of 80V, minimum gain of 25, and maximum saturation voltages of 0.3V and 0.9V. Dynamic characteristics include a minimum short-circuit forward current transfer ratio of 3 at 20MHz and maximum input and output capacitances of 16pF and 85pF from 100kHz to 1MHz.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    25 views2 pages

    Technical Data: Unitized Dual NPN Silicon Transistor

    Uploaded by

    Eynar Jose Atahuichi Quisbert
    This document provides technical specifications for a unitized dual NPN silicon transistor. The maximum ratings include collector-emitter voltage up to 60V, collector-base voltage up to 100V, and collector current up to 500mA. Electrical characteristics at 25°C include a minimum collector-emitter breakdown voltage of 80V, minimum gain of 25, and maximum saturation voltages of 0.3V and 0.9V. Dynamic characteristics include a minimum short-circuit forward current transfer ratio of 3 at 20MHz and maximum input and output capacitances of 16pF and 85pF from 100kHz to 1MHz.

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    TECHNICAL DATA

    UNITIZED DUAL NPN SILICON TRANSISTOR


    Qualified per MIL-PRF-19500/270 Devices 2N2060 2N2060L Qualified Level JAN JANTX JANTXV

    MAXIMUM RATINGS Ratings


    Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current

    Symbol
    VCEO VCBO VEBO IC

    2N2060
    60 100 7.0 500

    Unit
    Vdc Vdc Vdc mAdc

    One Both Section Sections Total Power Dissipation @ TA = +250C (1) 540 600 PT @ TC = +250C (2) 1.5 2.12 Operating & Storage Junction Temperature Range -65 to +200 TJ, Tstg 0 0 0 1) Derate linearly 3.08 mW/ C for TA > 25 C for one section, 3.48 mW/ C for both sections 2) Derate linearly 8.6 mW/0C for TC > 250C for one section, 12.1 mW/0C for both sections

    mW W 0 C

    TO-78*
    *See appendix A for package outline

    ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted)


    Characteristics Symbol V(BR)CER V(BR)CEO ICBO Min. 80 60 10 2.0 10 2.0 Max. Unit Vdc Vdc Adc Adc Adc Adc

    OFF CHARACTERISTICS
    Collector-Emitter Breakdown Voltage(3) RBE 10 , IC = 10 mAdc Collector-Emitter Breakdown Voltage IC = 30 mAdc Collector-Base Cutoff Current VCB = 100 Vdc VCB = 80 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc VEB = 5.0 Vdc

    IEBO

    6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

    120101 Page 1 of 2

    2N2060, 2N2060L JAN SERIES

    ELECTRICAL CHARACTERISTICS (cont)


    Characteristics Symbol Min. Max. Unit

    ON CHARACTERISTICS (3)
    Forward-Current Transfer Ratio IC = 10 Adc, VCE = 5.0 Vdc IC = 100 Adc, VCE = 5.0 Vdc IC = 1.0 mAdc, VCE = 5.0 Vdc IC = 10 mAdc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage IC = 50 mAdc, IB = 5.0 mAdc Base-Emitter Saturation Voltage IC = 50 mAdc, IB = 5.0 mAdc 25 30 40 50 75 90 120 150 0.3 0.9 Vdc Vdc

    hFE

    VCE(sat) VBE(sat)

    DYNAMIC CHARACTERISTICS
    Common Emitter Small-Signal Short-Circuit Forward-Current Transfer ratio IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz Small-Signal Short-Circuit Input Impedance IC = 1.0 mAdc, VCB = 5.0 Vdc, f = 1.0 kHz Small-Signal Short-Circuit Forward-Current Transfer Ratio IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz Small-Signal Short-Circuit Input Impedance IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz Small-Signal Open-Circuit Output Admittance IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz Input Capacitance VEB = 0.5 Vdc, IE = 0, 100 kHz f 1.0 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz (3)Pulse Test: Pulse Width 250 to 350s, Duty Cycle 2.0%. hfe hib hfe hie hoe Cibo Cobo 3 20 50 1,000 0 25 30 150 4,000 16 85 15 mhos pF pF

    6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

    120101 Page 2 of 2

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