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    2 N 5179

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    Naul Nbn
    This document provides information about the MPS5179/MMBT5179/PN5179 NPN RF transistor. It includes maximum ratings, electrical characteristics, typical DC and AC characteristics, a test circuit, and SPICE model parameters.

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    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    2 N 5179

    Uploaded by

    Naul Nbn
    102 views4 pages
    This document provides information about the MPS5179/MMBT5179/PN5179 NPN RF transistor. It includes maximum ratings, electrical characteristics, typical DC and AC characteristics, a test circuit, and SPICE model parameters.

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    This document provides information about the MPS5179/MMBT5179/PN5179 NPN RF transistor. It includes maximum ratings, electrical characteristics, typical DC and AC characteristics, a test circuit, and SPICE model parameters.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    102 views4 pages

    2 N 5179

    Uploaded by

    Naul Nbn
    This document provides information about the MPS5179/MMBT5179/PN5179 NPN RF transistor. It includes maximum ratings, electrical characteristics, typical DC and AC characteristics, a test circuit, and SPICE model parameters.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
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    MPS5179 / MMBT5179 / PN5179

    Discrete POWER & Signal Technologies

    MPS5179

    MMBT5179
    C

    PN5179

    E C B

    TO-92
    E

    SOT-23
    Mark: 3C

    TO-92
    B

    NPN RF Transistor
    This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 A to 30 mA range in common emitter or common base mode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40.

    Absolute Maximum Ratings*


    Symbol
    VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

    TA = 25C unless otherwise noted

    Parameter

    Value
    12 20 2.5 50 -55 to +150

    Units
    V V V mA C

    Operating and Storage Junction Temperature Range

    *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
    NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

    Thermal Characteristics
    Symbol
    PD RJA

    TA = 25C unless otherwise noted

    Characteristic
    Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient

    Max
    PN/MPS5179 350 2.8 357 *MMBT5179 225 1.8 556

    Units
    mW mW/C C/W

    *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

    1997 Fairchild Semiconductor Corporation

    5179, Rev B

    MPS5179 / MMBT5179 / PN5179

    NPN RF Transistor
    (continued)

    Electrical Characteristics
    Symbol Parameter

    TA = 25C unless otherwise noted

    Test Conditions

    Min

    Max

    Units

    OFF CHARACTERISTICS
    VCEO(sus) V(BR)CBO V(BR)EBO ICBO Collector-Emitter Sustaining Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current IC = 3.0 mA, IB = 0 IC = 1.0 A, IE = 0 IE = 10 A, IC = 0 VCB = 15 V, IE = 0 VCB = 15 V, TA = 150C 12 20 2.5 0.02 1.0 V V V A A

    ON CHARACTERISTICS
    hFE VCE(sat) VBE(sat) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 3.0 mA, VCE = 1.0 V IC = 10 mA, IB = 1.0 mA IC = 10 mA, IB = 1.0 mA 25 250 0.4 1.0 V V

    SMALL SIGNAL CHARACTERISTICS


    fT Ccb hfe rbCc NF Current Gain - Bandwidth Product Collector-Base Capacitance Small-Signal Current Gain Collector Base Time Constant Noise Figure IC = 5.0 mA, VCE = 6.0 V, f = 100 MHz VCB = 10 V, IE = 0, f = 0.1 to 1.0 MHz IC = 2.0 mA, VCE = 6.0 V, f = 1.0 kHz IC = 2.0 mA, VCB = 6.0 V, f = 31.9 MHz IC = 1.5 mA, VCE = 6.0 V, RS = 50, f = 200 MHz 900 2000 1.0 25 3.0 300 14 5.0 ps dB MHz pF

    FUNCTIONAL TEST
    Gpe PO Amplifier Power Gain Power Output VCE = 6.0 V, IC = 5.0 mA, f = 200 MHz VCB = 10 V, IE = 12 mA, f 500 MHz 15 20 dB mW

    *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

    Spice Model
    NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=282.1 Ne=1.177 Ise=69.28E-18 Ikf=22.03m Xtb=1.5 Br=1.176 Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.588n Tf=135.6p Itf=.27 Vtf=10 Xtf=30 Rb=10)

    MPS5179 / MMBT5179 / PN5179

    NPN RF Transistor
    (continued)

    DC Typical Characteristics

    VCESAT- COLLECTOR-EMITTER VOLTAGE (V)

    DC Current Gain vs Collector Current


    250 h FE - DC CURRENT GAIN
    125 C

    Collector-Emitter Saturation Voltage vs Collector Current


    0.2 = 10

    200 150 100


    - 40 C

    0.15
    125 C

    25 C

    0.1
    25 C

    50 0 0.001

    V CE = 5V
    0.01 I C - COLLECTOR CURRENT (A) 0.1

    0.05

    - 40 C

    0.1

    1 10 I C - COLLECTOR CURRENT (mA)


    P 40

    20 30

    V - BASE-EMITTER ON VOLTAGE (V) BE(ON)

    VBESAT- BASE-EMITTER VOLTAGE (V)

    Base-Emitter Saturation Voltage vs Collector Current


    1.2 1
    - 40 C

    Base-Emitter ON Voltage vs Collector Current


    1

    0.8

    - 40 C 25 C

    0.8 0.6 0.4 0.1 IC

    25 C 125 C

    0.6
    125 C

    = 10

    0.4

    V CE = 5V
    0.1 1 10 I C - COLLECTOR CURRENT (mA) 50

    1 10 - COLLECTOR CURRENT (mA)

    20 30

    0.2 0.01

    Collector-Cutoff Current vs Ambient Temperature


    I CBO- COLLECTOR CURRENT (nA) 100

    V
    10

    CB

    = 20V

    0.1

    25

    50 75 100 125 T A - AMBIENT TEMPERATURE (C)

    150

    MPS5179 / MMBT5179 / PN5179

    NPN RF Transistor
    (continued)

    AC Typical Characteristics
    POWER DISSIPATION vs AMBIENT TEMPERATURE
    PD - POWER DISSIPATION (mW) 350 300 250 SOT-23 200 150 100 50 0 0 25 50 75 100 TEMPERATURE ( C) 125 150

    TO-92

    Test Circuit

    50 pF

    (NOTE 2)

    175 pF 500 mHz Output into 50

    RFC

    (NOTE 1)

    NOTE 1: 2 turns No. 16 AWG wire, 3/8 inch OD, 1 1/4 inch long NOTE 2: 9 turns No. 22 AWG wire, 3/16 inch OD, 1/2 inch long

    1000 pF

    1000 pF

    2.2 K

    RFC

    - VCC

    VCC

    FIGURE 1: 500 MHz Oscillator Circuit

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