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    Silicon PNP Power Transistors

    Uploaded by

    Alfredo Valencia Rodriguez
    The document provides the product specification for the 2SB863 silicon PNP power transistor from JMnic. Key details include: - It has a TO-3P(I) package and is intended as a complement to the 2SD1148 transistor for power amplifier applications like 70W high fidelity audio frequency amplifiers. - Absolute maximum ratings include a collector-emitter voltage of -140V, collector current of -10A, and junction temperature of 150°C. - Electrical characteristics include a collector-emitter breakdown voltage of -140V minimum, collector-emitter saturation voltage of -0.60V typical, and DC current gain ranges of 55-110 or 80-160

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    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    Silicon PNP Power Transistors

    Uploaded by

    Alfredo Valencia Rodriguez
    29 views4 pages
    The document provides the product specification for the 2SB863 silicon PNP power transistor from JMnic. Key details include: - It has a TO-3P(I) package and is intended as a complement to the 2SD1148 transistor for power amplifier applications like 70W high fidelity audio frequency amplifiers. - Absolute maximum ratings include a collector-emitter voltage of -140V, collector current of -10A, and junction temperature of 150°C. - Electrical characteristics include a collector-emitter breakdown voltage of -140V minimum, collector-emitter saturation voltage of -0.60V typical, and DC current gain ranges of 55-110 or 80-160

    Original Title

    2SB863

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    The document provides the product specification for the 2SB863 silicon PNP power transistor from JMnic. Key details include: - It has a TO-3P(I) package and is intended as a complement to the 2SD1148 transistor for power amplifier applications like 70W high fidelity audio frequency amplifiers. - Absolute maximum ratings include a collector-emitter voltage of -140V, collector current of -10A, and junction temperature of 150°C. - Electrical characteristics include a collector-emitter breakdown voltage of -140V minimum, collector-emitter saturation voltage of -0.60V typical, and DC current gain ranges of 55-110 or 80-160

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    29 views4 pages

    Silicon PNP Power Transistors

    Uploaded by

    Alfredo Valencia Rodriguez
    The document provides the product specification for the 2SB863 silicon PNP power transistor from JMnic. Key details include: - It has a TO-3P(I) package and is intended as a complement to the 2SD1148 transistor for power amplifier applications like 70W high fidelity audio frequency amplifiers. - Absolute maximum ratings include a collector-emitter voltage of -140V, collector current of -10A, and junction temperature of 150°C. - Electrical characteristics include a collector-emitter breakdown voltage of -140V minimum, collector-emitter saturation voltage of -0.60V typical, and DC current gain ranges of 55-110 or 80-160

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
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    JMnic

    Product Specification

    Silicon PNP Power Transistors

    2SB863

    DESCRIPTION With TO-3P(I) package Complement to type 2SD1148 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage
    PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION

    Absolute maximum ratings(Ta=25)


    SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -140 -140 -5 -10 -1 100 150 -55~150 UNIT V V V A A W

    JMnic

    Product Specification

    Silicon PNP Power Transistors


    CHARACTERISTICS
    Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA; IB=0 IC=-5.0A ;IB=-0.5A IC=-5A ; VCE=-5V VCB=-140V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IC=-1A ; VCE=-10V IC=0;f=1MHz ; VCB=-10V 55 25 15 400 MIN -140 -0.60 -0.96 TYP.

    2SB863

    MAX

    UNIT V

    -2.0 -1.5 -5.0 -5.0 160

    V V A A

    MHz pF

    hFE-1 Classifications R 55-110 O 80-160

    JMnic

    Product Specification

    Silicon PNP Power Transistors


    PACKAGE OUTLINE

    2SB863

    Fig.2 Outline dimensions (unindicated tolerance: 0.10 mm)

    JMnic

    Product Specification

    Silicon PNP Power Transistors

    2SB863

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