Silicon PNP Power Transistors: Inchange Semiconductor Product Specification
Silicon PNP Power Transistors: Inchange Semiconductor Product Specification
Silicon PNP Power Transistors: Inchange Semiconductor Product Specification
Product Specification
2SA1265N
DESCRIPTION With TO-3P(I) package Complement to type 2SC3182 2SA1265 with short pin APPLICATIONS Power amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3P(I)) and symbol
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector
CONDITIONS
UNIT V V V A A W
PT Tj Tstg
Inchange Semiconductor
Product Specification
2SA1265N
TYP.
MAX
UNIT
V(BR)CEO
IC=-50mA ,IB=0
-140
VCEsat VBE
-0.8
-2.0
Base-emitter voltage
-1.0
-1.5
V A A
ICBO
VCB=-140V; IE=0
-5
IEBO
VEB=-5V; IC=0
-5
hFE-1
DC current gain
IC=-1A ; VCE=-5V
55
160
hFE-2
DC current gain
IC=-5A ; VCE=5V
35
fT Cob
Transition frequency
30
MHz
Output capacitance
480
pF
Inchange Semiconductor
Product Specification
2SA1265N
Inchange Semiconductor
Product Specification
2SA1265N