ESD

ESD Course
Dr. Lim Soo King

BSc (Hons)(Lond); Dip. Mgt (Dist)(MIM); MSc (Mal); PhD (Mal); MIPM Associate Professor
Universiti Tunku Abdul Rahman
Dr. Lim Soo King
ESD Course
Objectives of the Course
Understand the phenomena of ESD. Mechanism of ESD Process. Identify ESD materials. Ability to set-up the prevention and protection scheme for ESD occurrence. Understand the ESD protection design for circuit. Continuous improving process in ESD monitoring. Be a trainer.
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Outline of the Course
Introduction and Overviews
History. ESD Failure Rate. World Semiconductor Production. Field Return Rate. National Technology Roadmap for Semiconductor. Picture Illustrating ESD Failure. Evolution and Interpretation. What is ESD?
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Materials and Environment
Material properties. Movement and discharge time. Temperature and relative humidity.
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Mechanism of ESD
Electrification. Induction. Gas discharge. Chargeability. Triboelectric series. Causes of ESD . Factors influencing static charge generation.
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ESD Failure Mechanism
How does static electricity damage a circuit? Effects of ESD damage.
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ESD Reliability Test
Classification of ESD susceptibility. Models of ESD reliability test.
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Prevention and Protection
Principles of Static Control. Setting up ESD requirement production line. Handling and storage of ESD sensitive parts. Electrostatic protected area. Good practice in ESD work area. Audit.
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ESD Materials Identification and Selection
Material structures and properties. Criteria of selection. Material design physics.
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ESD Materials Monitoring/Measurement Tools and Awareness Label
ESD materials. Monitoring tools. Prevention materials. Protection materials.
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Circuit Design Protection
Approach. Methods employed for design protection and prevention.
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Case Study
Self audit.
Assessment
Twenty questions.
Discussion
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Introduction and Overviews
History. ESD Failure Rate. World Semiconductor Production. Field Return Rate. National Technology Roadmap for Semiconductor Picture illustrating ESD Failure. Evolution ad Interpretation. What is ESD?
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History
In 1400s ESD procedure was installed to prevent electrostatic discharge ignition of black gun power in Europe and Caribbean. In1860, it was used to prevent fire and during drying process in paper mill. In modern world, ESD control is employed in many areas such as ship yard, paper industry, assembly plant, microelectronics industry, and others.
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ESD Failure Rate
Descriptions Component Manufacturer Subcontractor Contractors User Min. Loss 4% 3% 2% 5% Max. Loss 97 % 70 % 35 % 70 % Est. Avg. Loss 16 22 % 9 15 % 8- 14 % 27 33 %
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World Production of Semiconductor
250 Bil $ 200 150 100 50 0 '86 '90 '92 '94 '96 '98 '00 '02 '05 '06
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Field Return Failure Mode
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National Technology Roadmap for Semiconductor
Year Channel length (m) Equivalent oxide thickness (m) Transistor density (cm2)
Red is actual channel.
99 0.18 (0.18) 1.9 2.5 6.6 M
02
05
08
11
14 0.035 0.5 0.6 664 M
0.13 0.10 0.07 0.050 (0.13) (0.065) (0.045) 1.5 1.9 18 M 1.0 1.5 44 M 0.8 1.2 109 M 0.6 0.8 269 M
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Pictures of ESD Failure
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Picture of ESD Failure
Junction spiking
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Dielectric Breakdown
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Diffusion damage
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Base-emitter region
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Secondary breakdown
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Metallization Burn
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Evolution and Interpretation
Intentionally left blank
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What is ESD?
ESD is defined as electrostatic discharge. It is a process of electron transfer between materials.
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What is ESD?
Insulator is the main contributor of ESD. It is a material that conducts very small amount of electricity. Once the material loses or acquires electron, the electron equilibrium state remains for a long time. Material loses electron has net positive charge. Material acquires electron has net negative charge. The most common way of generating static electricity is friction (contact and separate).
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What is ESD?
Induction by EM interference causing polarization of charge to other material at the polarized end. Example of such source is high tension terminal. When two materials come in contact and separate, static electricity will be generated. When the charge material comes in contact with another material, transfer of electron would occur resulting damage to the material.
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Balance of Charge
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Transfer of Charge After Separation
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Transfer of Charge After Separation
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Generation of Static Charge by Separation
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Generation of Static Charge by Separation
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Materials and Environment
Material properties. Movement and discharge time. Temperature and relative humidity.
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Material Properties
Conductor Conduct good electricity. Low resistance. No band-gap. Semiconductor Conduct small amount of electricity.
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Material Properties
Moderate resistance. Narrow band-gap. Insulator Conduct very small amount or no electricity. High resistance Large band-gap
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Band-gap of Insulator
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Band-gap of Conductor
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Discharge Time Using Human Body Model
Resistance Time (ms) Resistance Time (ms) 102 92 ns 109 103 2.0 s 1010 106 920 s 1011 92 s 107 9.2 ms 1012 920 s 108 76.6 ms 1013 2.5 hrs
92 ms 920 ms
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Movement time of Typical Operation
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Temperature and Relative Humidity
High temperature, high thermionic emission. High relative humidity, more dissociation of water molecule, less charge generation. Reduce surface resistivity. Increase surface conductivity.
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Typical Electrostatic Voltage at Different RH
Means of Static Generation 10 - 20% 65 90 % at Room Temperature
Walking across carpet Walking over vinyl floor Worker at bench Vinyl envelope Poly bag Chair padded with poly ethane foam.
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35,000 12,000 6,000 7,000 20,000 18,000
1,500 250 100 600 1,200 1,500
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Surface Resistivity versus RH at 25C
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Mechanism of ESD
Electrification. Induction. Gas discharge. Chargeability. Triboelectric series. Causes of ESD . Factors influencing static charge generation.
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Electrification
Materials in Contact
+ A + + + + + B
Helmholtz Interface (10 nm)

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Materials Separation
+ A + + + + Point of Neutralization + B
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The interface gap increased many folds. Capacitance decreased many folds. Potential difference between positively and negatively charged layers increased tremendously. Electric field is extremely high. Neutralization tends to happen due to gas discharge. Gas discharge if electric field is greater than 3 MV/m. Neutralization depends on rate of separation, surface resistivity of material, temperature and humidity.
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Materials After Separation
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Electrostatic Induction
Position of Neutral Objects

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Positive charge induced on conductor

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Grounding conductor to remove negative charge

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Moving away charged sphere, redistribution of positive charge

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Positive charge remains on conductor

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Electrostatic Discharge
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Electrostatic Discharge
Inhomogeneous field gas discharges occur first at the strongest part of the field when it is sufficient to cause an avalanche. Small surface high electric field. Breakdown of air closed to pointed electrode. Glow is usually observed in dark caused by relaxation of atom from excited state with emission of photons. Violet color is nitrogen and red color is oxygen.
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Type of Electrostatic Discharge
Corona discharge. Spark discharge. Flash lightning.
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Corona Discharge
Charged object
Electric field Corona needle point
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Corona Discharge
Presence of electric field. As the pointed needle is closed to charged conductor, the electric field builds up. Ionization (corona) occurs when reaches critical field (3 MV/m). Positive and negative ions generated. Color visual light can be observed. Micro-ammeter will register current. Corona discharge can be occurred with applied high potential to pointed needle. This principle is used to eliminate static charge.
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Demonstration of Corona Discharge
Corona discharge
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Spark Discharge
Discharge between flat metallic electrodes.
Capacitor
Metallic plate
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Chargeability Versus Surface Resistivity
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Trioelectric Series
It determines how different materials compare with their tendency to lose or acquire electron when one in contact and separation with another. It is a table showing the order of charge type acquired by the common insulating materials. It is a prediction of the charge polarity. If wool comes in contact with PVC and separate, wool would lose electron and PVC would gain electron.
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Trioelectric Series
Positive (donor) + Human hands Rabbit fur Glass Polyamide Nylon Wool Silk Aluminum Paper Steel Neutral 0 Cotton
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Trioelectric Series continues
Wood Hard rubber Brass Silver Sealing wax Polyester Polyethylene PVC Silicon Negative (acceptor) - Teflon
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Trioelectric Series
Material with high relative permittivity tends to lose electron easier than material with low relative permittivity. High surface conductivity, less charge.
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Triboelectric -Relative Permittivity
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Typical Source of Static Generator in MFG Area
Work surface Floor Clothes Chair Packaging and handling Assembly Cleaning Test Repair Waxed, painted or varnished surface. Common vinyl or plastic. Sealed concrete or sheeting. Synthetic personal garments. Finished wood. Fiber glass. Plastic, bag, wraps, envelope, boxes, trays, bubble pack. Spray cleaner, ungrounded solder iron, brushes, sand blasting, heat gun, temperature chamber, and etc.
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Causes of ESD
Inadequate protection, prevention, and verification. Too many static generators in work area. Lack of proper training. Lack of focus. i.e. no steering committee to handle ESD issue.
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Causes of ESD
Rapid flow of charge between two objects in contact. Point of contact. Surface resistivity. Work function of materials. Humidity and temperature. Insufficient knowledge and poor work procedure.
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Factors Influencing ESD Generation
Material Type
Conductor - surface resistivity < 105/ . Too rapid discharge. Dissipative surface resisitivity 106/ and 1012/ . Moderate discharge. Insulator surface resistivity > 1012/ . Too long discharge. 30 years ago 10-20 m. Today is sub-micron. Oxide thickness from 1000th Armstrong to less than 100 Armstrong. 90 nm device by Intel has five layers of SiO2 gate only.
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Integration Scale of ICs
ESD Course
Less electric field is required to damage oxide and active part.
Relative Humidity (RH)

High RH means more water. High water content means higher H+ and OH- ions. Increase the surface conductivity. Lesser tendency to lose or acquire electron. Less water content easier to lose or acquire electron.
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How does static electricity damage a circuit? Effects of ESD damage.
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Thermal secondary breakdown Dielectric breakdown Gaseous arc discharge/junction spiking. Bulk breakdown. Latent and catastrophic failure. ESD upset resulting soft bit. I/O and functional failure. Joule Heating. T = ASE Dt . D-thermal diffusivitiy, S-specific heat. Electrical overstress (EOS).
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Identifying of ESD Failure Mechanism
Initial test result high leakage failure. Functional test failure. Pattern test failure. Deviation of curve tracer results. Before burn-in, LCD static analysis for hot spot. After burn-in, high leakage failure at final test results. Failure analysis to trace the failure site. High power optical inspection. Scanning electron microscope analysis.
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A Typical Set-Up to Measure Output High Leakage Current IOH
Positive current means possible transistor M3 and M4 have problem. Negative current means possible transistor M1 and M2 have problem. Most problem found at the gate, source of p-MOS or drain of n-MOS transistors.
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Layout of a Two-input NOR Gate
Source
Drain
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A Typical Set-Up to Measure Output Low Leakage Current IOL
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Layout of a Two-input AND Gate
Source
Drain
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Curve Tracer Analysis
50 40 30 20 10 0
0. 5 1. 5 -3 .7 -3 .5 2. 5
Bad Good
-10 -20 -30
-3
-2
-1
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Drain of n-MOSFET damaged by ESD causing leakage to p-substrate region.
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Metal 1 fused open and re-flowed/melted
Fused open
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Re-flowed/melted
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SEM picture showing oxide damage
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SEM picture showing drain/gate damage
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SEM picture showing silicon melt
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Effects of ESD Damage
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How does ICs damaged by static electricity?
Primary factor is transfer of charge between ICs, which termed as discharge process. Reduction in capacitance by lifting resulting damage due to increase of voltage. Charge from operator transfer to ICs device.
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Failure Mechanism due to Transfer of Charge
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Failure Mechanism due to Lifting
Capacitance is inverse proportional to separation of the capacitor. If a device on the bench having a few hundred of volt of static charge and is not sufficient to damage the circuit lifting by operator, the reduction in capacitance resulting in increase of static voltage to several thousand voltage can instantly damage the device
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ESD Reliability Test
Classification of ESD susceptibility. Models of ESD reliability test.
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Classification of ESD Susceptibility
It depends on the ESD failure model use. The most susceptible class of product is MOSFET, TFT, GaAsFET, and others. Schottky diode, Op-Amp, and MOS devices are moderate class. Resistor chip, low power transistor, SiC devices are least susceptible.
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HBM Classification of ESD Susceptibility
Class 0 1A 1B 1C 2 3A 3B Voltage Range < 250 V 250 to < 500 V 500 to < 1,000 V 1,000 to < 2,000 V 2,000 to < 4,000 V 4,000 to < 8,000 V 8,000 V
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MM Classification of Product Susceptibility
Class M1 M2 M3 M4 Voltage Range < 100 V 100 to < 200 V 200 < 400 V > or = 400 V
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CDM Classification of Product Susceptibility
Class C1 C2 C3 C4 C5 C6 C7 Voltage Range < 125 V 125 V to 250 V 250 V to 500 V 500 V to 1,000 V 1,000 V to 1,500 V 1,500 V to 2,000 V > 2,000 V
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ESD Failure Model
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Human Body Model
Involve at least two pins. One is the ground pins.

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Machine Model
Involve at least two pins. One is the ground pins.

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Charged Device Model
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Field Induced Model
Presence of electric field damaging unprotected circuit without discharging.
Floating Induced Model

Presence of electric field damaging floating gate.
Charged Board Model

Charged board damage is more severe than HBM or CDM due finger inductance and board capacitance.
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Ideal RLC Parameters of HBM, MM and CDM
ESD Capacitance Resistance Inductance Voltage Model C R I V
HBM MM CDM
100 pF 200 pF 10 pF
1.5 k 20 20
7500 nH 750 nH 5 nH
5 kV 500 V 500 V
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Prevention and Protection
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Principles of Static Control
Design in immunity. Eliminate and reduce generation of static electricity. Dissipate and neutralize. Prevent and protect from ESD.
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Setting-up an ESD Requirement Production Line
Using ESDA S20.20, DOD-HBK-263B, JESD625-A, Mil-std-1686A, and 883 method 3015.7 specifications as the guides. Convert the requirements into own internal specifications. Generate audit check sheets and records. Set-up a ESD Steering Committee A cross functional team ideally headed by QRA. Determine the policy and provide recommendation.
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Setting-up an ESD Requirement Production Line
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ESD Safe Workstation
Grounding either hard ground and soft ground. Conductive flooring/dissipative flooring. Ground strap. ESD garment such as finger cot, attire, and shoes. Dissipative table mat and non-static generating materials. Localized ionization. Continuous grounding monitoring system.
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Device/PCB Protection
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Protect the edge connector of the PCB with conductive shunting bar. Transport the device/PCB in shielded bag/Faraday cage.
Personnel Protection
Always wear a ground strap or ESD footwear before handling device/PCB.
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Always wear ESD protective smock.
Warning and Awareness

ESD warning signage at the entrance to ESD work area.
Training
Involve all levels of personnel.
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Awareness and re-training. Constant update of ESD knowledge.
Audit
Ensure periodic audit. Daily check the functionality of ground strap. Certification and re-certification of personnel for ESD awareness and knowledge.
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Typical Facility Areas Requiring ESD Protection
Receiving. Inspection. Stores and warehouse. Assembly. Test and inspection.
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Typical Facility Areas Requiring ESD Protection
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A Typical ESD Safe Workstation
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Good Practices in ESD Work Area
Always ground yourself by wearing a ground strap. Keep away ESD generator from the device/PCB. e.g. paper, high tension terminal, plastic, and etc. Always use ESD workstation and wearing ESD attire. Use shielded box or low charge generation tube to store or transport device/PCB.
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Good Practices in ESD Work Area
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ESD Materials Identification and Selection
Material structures and properties. Criteria of selection. Material design physics.
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Material Properties and Structures
Insulator. Conduct little electricity. High surface resistivity.
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Resistance and Resistivity of Materials
Surface Resistance (ohm) S11.11.1993 Conductive Static Dissipative Value 1.0x103 1.0x104 1.0x105 1.0x106 1.0x107 1.0x108 1.0x109 1.0x1010 1.0x1011 1.0x1012 Surface Resistivity (/) ASTM D257 Conductive
Static Dissipative
Insulative
Insulative
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How to Interpret Surface Resistivity?
Surface resistivity (SR) is measured in /. It is the same irrespective of the square area. People tend to measure SR using a normal resistance meter and probe, which is wrong. SR should be measured using mega-ohm meter and square contact as provided in ASTM D257 and S11.11.
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How to Interpret Surface Resistivity?
If a 10 resistance has a square surface. We say the resistance is 10 and SR is 10 /. If two similar resistors are connected in series then the resistance is 20 and the SR is not 20 /. If two of these two resistors are connected in parallel then the effective resistance is 10 and SR is 10 /. This example illustrates that SR is same irrespective of the size of the square.
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Criteria for Selection of ESD Materials
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Material Design Physics
Turning insulator into having antistatic properties. Antistatic surfactant such as ethoxylated amines or ethoxylated ester mixed with polymer. Commonly known as pink poly. Conductive filler such as carbon black, carbon fiber, stainless-steel fiber, and etc mixed with polymer. Inherently Dissipative polymer alloys IDP.
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Antistatic surfactant
Carbon-filled polymer
Coating of carbon black
Inherently Dissipative poly alloy

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Surface resistivity comparison for various techniques

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ESD Materials, Monitoring/Measurement Tools and Awareness Label
ESD materials. Monitoring tools. Prevention materials. Protection materials.
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Common ESD Control Materials in ESD Work Area
Personal grounding. Protective clothing/smock/shoes. Dissipative table mat. ESD chair. Conductive box/bag. Conductive foam. Antistatic tube. Antistatic flooring.
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Common ESD Control/Monitoring Materials in ESD Work Area
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Ground Strap
Physical Appearance
Internal construction with Human body model
2.0 kV ESD voltage generates 1.3 A current without ground strap. 2.0 kV ESD voltage generates 2.0 mA current with ground strap. Discharge time 150 s without ground strap. Discharge time 100 ms with ground strap.
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ESD Smock
Cotton type is ideal because it is relatively neutral

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Static Dissipative Bag
Low static generator (antistatic) pink poly polyethylene type, which is low-end ESD bag. Carbonate non-transparent conductive bag. Static shielding bag (Faraday shield) has a aluminum coating deposited on polyester film outer layer and inner polyethylene layer. Metal in has high resistance and metal out has lower resistance. Moisture Vapor Barrier shielding bag has 10X thickness of normal bag.
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Static Dissipative Bag A Typical Construction
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Conductive Bag
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Conductive Foam and Antistatic Tube
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Conductive Box Carbon filled polymer
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Antistatic Flooring
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Static Dissipative Mat
Volumetric type-Homogeneous Non constant discharge time. Difficult to ground. Cheap. Ideal for service not for production. Conductive type Non-Homogeneous Constant discharge time. Easy ground. Costly. Ideal for production.
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Antistatic Mat
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ESD Symbols
Ground Point Symbol
ESD Susceptibility Symbol
ESD Protective Symbol
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ESD Chair
The ESD Chair is designed
conductive materials. hooded static-free casters. static-free fabric material. comfort ergonomic.
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Ionizer
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Ionizer An ac Type
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Ionizer A dc Type
Corona discharge depends on curvature of the electrode. 100 m radius 2 kV, 500 m radius 4 kV and 1000 m radius 6 kV.
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Shoes/Shoes Strap
Use human sweat as the conducting medium.
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ESD Monitor Equipment
Static Field Meter

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Megaohm meter
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ESD Monitor Equipment Charge Plate
Discharge time measurement. Ion balance check.

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ESD Monitor Equipment Faraday Cup
Measurement of charge
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Approach. Methods employed for design protection and prevention.
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Approach
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Electrical Strength of Semiconductor Material
Field strength of silicon dioxide is 109 volts/meter. A device of oxide thickness 500 Armstrong, it needs only 50 volts to destroy the oxide. The typical diode avalanche voltage is 5 V to 20 volts. Junction breakdown for JFET and MOSFET is typically 20 V.
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Resistor Limiting current and provide voltage drop. Diode Low resistance large current handling capability to bypass charge. Thickness field oxide device (TFO).
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Resistor - Diode Circuit
Resistor R 1.5 shall cause voltage drop. Positive ESD bypassed through diode D1. Negative ESD bypassed through diode D2.
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Resistor - Diode Circuit
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n-Type Diffusion Resistor
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Thickness Field Oxide Device
Operate like a lateral npn transistor. The drain space determines the maximum current carrying capacity.
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n-MOS Pull Down Model
It may cause secondary breakdown

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p-MOSFET Pull-Up Model
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Triggering Graph of Lateral npn Transistor
Point 1, avalanche begins. Point 2, snapback occurs. The lateral npn transistor is selfBiased mode. Point 3, heating up of drainsubstrate causes secondary breakdown exceed junction temperature.
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Silicon Control Rectifier- Low Voltage Triggered Type
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Model of Silicon Control Rectifier
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Triggering Graph of Silicon Control Rectifier
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Generic Protection Circuit - NMOS Clamp
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Specifications and Standards
ESD/EOS standard. Compliance. Own specifications.
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ESD Compliance Specifications
DOD-HBK-263 B, JESD625-A, Mil-std1686A, and 883 E method 3015.7 are sufficient. ESDA S20.20 is sufficient to industrial standard.
The spec. covers many areas of control.
Design immunity, ESD susceptibility, and classification.

ESD Course
ESD Compliance Specifications
Control and prevention. Qualification and acceptance of new equipment and materials. Testing circuit including ESD classification tests. Auditing. Training. Quality system.
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Assessment Test
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Discussion
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Thank You
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ESD Course

Dr. Lim Soo King

Universiti Tunku Abdul Rahman

Dr. Lim Soo King

Dr. Lim Soo King

Dr. Lim Soo King

Dr. Lim Soo King

Dr. Lim Soo King

Dr. Lim Soo King

Dr. Lim Soo King

Dr. Lim Soo King

Dr. Lim Soo King

Dr. Lim Soo King

99 0.18 (0.18) 1.9 2.5 6.6 M

14 0.035 0.5 0.6 664 M

Dr. Lim Soo King

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Dr. Lim Soo King

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35,000 12,000 6,000 7,000 20,000 18,000

1,500 250 100 600 1,200 1,500

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Dr. Lim Soo King

Helmholtz Interface (10 nm)

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Dr. Lim Soo King

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Position of Neutral Objects

Positive charge induced on conductor

Grounding conductor to remove negative charge

Moving away charged sphere, redistribution of positive charge

Positive charge remains on conductor

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Dr. Lim Soo King

Dr. Lim Soo King

Dr. Lim Soo King