Noise Tutorial: Low-Frequency CMOS Analog Design: Rafael J. Betancourt-Zamora

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Rafael J. Betancourt-Zamora
http://www.betasoft.org/
May 16, 2002
Noise Tutorial:
Low-frequency CMOS
Analog Design
2 of 30
Noise Tutorial: Low-frequency CMOS Analog Design
2002, Rafael J. Betancourt-Zamora http://www.betasoft.org/
Outline
Goals
Noise Overview
Resistor Noise Sources
MOSFET Noise Sources
Noise of Common Amplifier Topologies
Examples
Summary
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Grasp the importance of noise performance in low-frequency
instrumentation design
Understand the types of noise present in integrated resistors
and MOS devices.
Understand the noise trade-offs of different circuit topologies
Perform simple noise analysis
Goals
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Outline
Goals
Noise Overview
Examples
Summary
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What is noise?
Unwanted disturbance that interferes with a desired signal
External: power supply & substrate coupling, crosstalk, EMI, etc.
Internal: random fluctuations that result from the physics of the devices or materials
Smallest detectable signal, signal-to-noise ratio (SNR), and dynamic range are
determined by noise
SNR
P
signal
P
noise
--------------------
V
rms signal ,
2
V
rms noise ,
2
------------------------- = =
We will look at internal noise sources and how
they affect key performance metrics.
6 of 30
t
V t ( )
P x ( )
FUZZ 6
Random process with zero mean
Instantateous amplitude is unpredictable
Average noise power can be measured (variance)
What does it look like?
WHITE NOISE (GAUSSIAN DISTRIBUTION)
m 0 =
V
rms
=
STANDARD DEVIATION
VARIANCE
MEAN
2
V
rms
2
=
f
V
rms
2
Hz
Noise Power Spectral Density
(Normalized Noise Power)
7 of 30
Types of Noise
THERMAL
SHOT
FLICKER
thermal excitation of charge carriers
fluctuations in dc current flow through junctions
traps in semiconductors
f
V
rms
2
Hz
f
V
rms
2
Hz
f
A
rms
2
Hz
1 f
V
rms
2
f
---------- 4kTR =
I
rms
2
f
----------- 2qI
DC
=
V
rms
2
f
-------------
K
f
V
DC
2
f
-------------------- =
, V
2
/Hz
, A
2
/Hz
, V
2
/Hz
k = 1.38 x 10
-23
J/K
q = 1.6 x 10
-19
C
T = Temperature, K
K
f
= Flicker coefficient
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Outline
Goals
Noise Overview
Examples
Summary
9 of 30
Resistor Thermal Noise
V
n
2
f
------ 4kTR =
, V
2
/Hz
R

*
R

V
n
2
4kTRfn =
V
n
2
I
n
2 4kT
R
----------------
fn =
I
n
2
, V
2
, A
2
NOISE DENSITY
NOISE POWER
I
n
2
f
-------
4kT
R
---------------- =
, A
2
/Hz
1k @ 25 C
nV Hz
pA Hz
4.05
4.05
fn = NOISE BANDWIDTH
Integrate noise PSD over frequency to arrive at total noise power.
For white noise, multiply PSD by noise bandwidth.
10 of 30
Noise Bandwidth
NOISE BW
Noise bandwidth is defined for a brickwall transfer function
Noise bandwidth is not the same as 3dB bandwidth
f

f
3dB
f
n

A
vo
2
A
vo
2
f
n
A
v
f ( )
2
0
df =
No. Poles
1
2
3
2nd-order BPF
f
n

2
--- f
3dB
=
f
n
1.22 f
3dB
=
f
n
1.16 f
3dB
=
f
n

2
--- f
3dB
=
A
v
f ( )
2
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kT/C Limit
C

R

*
V
n
2
V
o
2
f
n

2
--- f
3dB
=
f
3dB
1
2RC
--------------- =
f
n
1
4RC
----------- =
V
o
2
4kTRfn = , V
2
}
V
o
2
4kTR
1
4RC
-----------

=
V
o
2 kT
C
------ =
Total noise power is independent of R
Capacitor is noiseless, but accumulates noise from resistor
This fundamental limit is important for sampled systems
, V
2
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Combining Noise Sources
R1

*
R2

V
n1
2
I
n2
2
R2

*
V
n2
2
R1+R2

*
V
n1
2
V
n2
2
+
R1
I
n1
2
R1||R2

I
n1
2
I
n2
2
+
For uncorrelated noise sources, just add the noise powers.
For correlated sources use:
V
o
2
V
n1
2
V
n2
2
2cV
n1
V
n2
+ + =
c 1
CORRELATION COEFFICIENT
SERIES PARALLEL
V
o
2
4kT R1 R2 + ( )fn =
I
o
2
4kT
1
R1
-------
1
R2
------- + ( )fn =
13 of 30
Resistor Flicker (1/f) Noise
f
V
n
2
Hz
1 f
V
nf
2
f
-------
K
f
V
DC
2
f
--------------------- =
, V
2
/Hz
THERMAL
f
c
fff
V
nf
2
K
f
V
DC
2
f
---------------------
f
L
f
H
df K
f
V
DC
2
f
H
f
L
-----

ln = =
V
o
2
4kTRfn K
f
V
DC
2
f
H
f
L
------

ln + =
TOTAL RESISTOR NOISE
, V
2
Constant noise power per decade
f
c
defines 1/f corner frequency where
flicker noise is equal to thermal noise.
V
nf
2
2.3K
f
V
DC
2
= FOR f
H
/f
L
= 10
f
L
f
H
, V
2
ASSUMES
fn f
c
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Noise Index
V
nf
2
V
DC
2
-------------
DEC
K
f
V
DC
2
10 ( ) ln
V
DC
2
----------------------------------------------------- 2.3K
f
= =
Normalize 1/f noise per Volt, per decade of frequency
Can express 1/f noise PSD and f
c
in terms of NI
NI 2.3K
f
10
6
= , V/V/decade
V
nf
2
NI
2
V
DC
2
2.3 10
12
-----------------------------
1
f
---
= , V
2
/Hz
f
c
NI
2
V
DC
2
2.3 10
12
4kTR
-------------------------------------------------- =
, Hz
20log(NI)
poly
pdiff
ndiff
-10dB
-5dB
-15dB
[Motchenbacher93]
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Outline
Goals
Noise Overview
Examples
Summary
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Noise Sources in a MOSFET
*
V
nf
2
I
nd
2
*
V
ng
2
DRAIN THERMAL NOISE
FLICKER NOISE
GATE THERMAL NOISE
V
ng
2
f
-------- 4kTR
G
3 =
I
nd
2
f
------- 4kTg
m
=
, V
2
/Hz
, A
2
/Hz
=
{ {
2/3, long channel
2-3, short channel
Rds = 1/g
m
Long Channel
Saturation
due to limited channel conductance
can be neglected with good layout
V
nf
2
f
-------
K
f
WLC
ox
f
------------------- =
, V
2
/Hz
K
f
1.2 10
24
= V
2
F
FOR NMOS
[Razavi01]
SPICE
I
nf
2
f
------
K
f
I
DC
AF
L
EFF
2
C
ox
f
----------------------- =
, A
2
/Hz
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Input-referred Noise
*
V
nf
2
I
nd
2
*
V
ni
2
I
ni
2
Define equivalent input voltage and
current noise sources.
MOSFET input current noise source
can be neglected at low frequencies.
*
V
ni
2
V
nd
2
f
--------
I
nd
2
f
-------
g
m
2
4kT
g
m
--------------------- = =
, V
2
/Hz
INPUT-REFERRED DRAIN NOISE
TOTAL INPUT-REFERRED NOISE
V
ni
2
f
-------
4kT
g
m
---------------------
K
f
WLC
ox
f
------------------- + =
, V
2
/Hz
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1/f Corner Frequency
4kT
g
m
---------------------
K
f
WLC
ox
f
c
---------------------- =
f
V
n
2
Hz
1 f
THERMAL
f
c
fff
Defines where flicker noise is equal to thermal noise.
Need to increase transistor area to reduce flicker noise.
f
c
K
f
g
m
4kTWLC
ox
--------------------------------------- =
19 of 30
Outline
Goals
Noise Overview
Examples
Summary
20 of 30
Current Source
I
n1
2
I
1
V
BIAS
I
n1
2
f
------- 4kTg
m
=
Neglected flicker noise of M1
Need to minimize output current noise
Minimize gm for low noise
V
o
2
V
o
2
f
--------
I
n1
2
f
------- r
o
2
=
, V
2
/Hz
, A
2
/Hz
V
DD

M1
V
o
2
f
-------- 4kTg
m
r
o
2
=
, V
2
/Hz
21 of 30
Common Source
R
L
V
DD

M1
I
nL
2
*
V
nf
2
I
n1
2
V
o
2
V
i
Neglected output conductance of M1
Maximize g
m
, R
L
, and transistor area for low noise
For a differential pair, double the noise
V
ni
2
f
-------
4kT
g
m
---------------------
K
f
WLC
ox
f
-------------------
4kT
g
m
2
R
L
---------------------- + + =
, V
2
/Hz
I
n1
2
f
------- 4kTg
m
=
, A
2
/Hz
I
nL
2
f
---------
4kT
R
L
---------------- =
, A
2
/Hz
V
nf
2
f
-------
K
f
WLC
ox
f
------------------- =
, V
2
/Hz
22 of 30
Source Follower
M1
I
n2
2
V
o
2
*
V
n1
2
V
DD

V
i
V
BIAS
M2
Neglected flicker noise of M2
VERY NOISY, AVOID
V
ni
2
f
-------
V
n1
2
f
--------
I
n2
2
f
-------
1
g
m1
--------------- r
o1
2
r
o2
2
|| ||

2
A
v
2
--------------------------------------------------------------------------- + = , V
2
/Hz
V
n1
2
f
--------
4kT
g
m1
---------------------
K
f
WLC
ox
f
------------------- + = , V
2
/Hz
I
n2
2
f
------- 4kTg
m
=
, A
2
/Hz
A
v
1 WHERE
23 of 30
Common Gate
I
n1
2
V
o
2
V
BIAS
M1
R
L
V
DD

I
nL
2
V
i
Define equivalent input voltage and current noise sources
Input noise current cannot be ignored
Transfers load current noise to the input
I
nL
2
f
---------
4kT
R
L
---------------- =
, A
2
/Hz
I
n1
2
f
------- 4kTg
m
=
, A
2
/Hz
I
ni
2
f
-------
4kT
R
L
----------------
g
m
2
K
f
WLC
ox
f
------------------- + =
, A
2
/Hz
V
ni
2
f
-------
4kT
g
m
---------------------
4kT
g
m
2
R
L
----------------------
K
f
WLC
ox
f
------------------- + + = , V
2
/Hz
Rs = 1/g
m
(neglecting
body effect)
*
V
nf
2
V
nf
2
f
-------
K
f
WLC
ox
f
------------------- =
, V
2
/Hz
24 of 30
Cascode
V
o
2
V
BIAS
M1
R
L
V
DD

I
nL
2
*
V
n1
2
V
i
I
n2
2
M2
V
n1
2
f
--------
4kT
g
m1
---------------------
K
f
WLC
ox
f
------------------- + = , V
2
/Hz
I
nL
2
f
---------
4kT
R
L
---------------- =
, A
2
/Hz
M2s noise contribution is negligible at low frequencies
Capacitance at M1s drain increase noise at high frequencies
V
ni
2
f
-------
4kT
g
m1
---------------------
K
f
WLC
ox
f
-------------------
4kT
g
m1
2
R
L
-------------------------- + + =
, V
2
/Hz
25 of 30
Outline
Goals
Noise Overview
Examples
Summary
26 of 30
Variable Resistor
(1-k)R
T
I
n2
2
kR
T I
n1
2
V
o
V
i
(1-k)R
T
I
n
2
kR
T
V
o
R
eq
= k(1-k)R
T
WORST CASE
k = 0.5
R
eq
= R
T
/4
I
n
2
f
-------
4kT
R
eq
---------------- =
, A
2
/Hz
I
n
2
f
-------
16kT
R
T
--------------------- =
, A
2
/Hz
27 of 30
Inverting Operational Amplifier Filter
R1

*
R2

*
C

*
V
n1
2
V
n2
2
V
o
V
i
V
na
2
-
+
Negligible input noise current
Ignore 1/f noise
Low frequency operation
where
V
ni
2
f
------- V
n1
2
V
n2
2
A
vi
2
-------- + =
A
vi
R2
R1
------- =
1. SHORT V
na
2. SHORT V
i
V
ni
2
f
------- V
na
2
A
vni
2
A
vi
2
------------

V
na
2
1
R1
R2
------- +

2
= =
A
vni
1
R2
R1
------- + =
3. APPLY SUPERPOSITION
V
ni
2
f
------- V
n1
2
V
n2
2
A
vi
2
-------- + V
na
2
1
R1
R2
------- +

2
+ =
FOR LARGE GAIN, R2 >> R1
V
ni
2
f
------- V
n1
2
V
n2
2
A
vi
2
-------- + V
na
2
+ = , V
2
/Hz
f
n

2
---
1
2R
2
C
-----------------
1
4R
2
C
------------- = =
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Outline
Goals
Noise Overview
Examples
Summary
29 of 30
What We Learned
Thermal noise and flicker noise are the major sources of headaches
for low-noise, low frequency instrumentation design in CMOS.
Noise bandwidth is not the same as 3dB bandwidth.
Capacitors are noiseless, but they can accumulate noise.
Resistors can have flicker noise, but only when there is current flow.
NOISE IN GENERAL
NOISE IN MOSFETS
Need to increase transistor area to reduce flicker noise.
Current source: Minimize gm for low noise current
Common source: Maximize g
m
, R
L
, and transistor area for low noise
Source follower: VERY NOISY, AVOID
Common gate: Transfers load current noise to the input. Input noise
current cannot be ignored.
Cascode: Cascode transistor noise contribution is negligible at low
frequencies.
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1. P.H. Garret, Analog I/O Design: Acquisition, Conversion,
Recovery, Reston Publishing, Reston, VA, pp. 264, 1981.
2. D.A. Johns, K. Martin Analog Integrated Circuit Design,
John Wiley & Sons, pp. 706, 1997.
3. C.D. Motchenbacher, J.A. Connelly, Low Noise Electronic
System Design, John Wiley & Sons, pp. 422, 1993.
4. B. Razavi, Design of Analog CMOS Integrated Circuits,
McGraw-Hill, pp. 684, 2001.
References

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