Lecture 22 Thinfilm Deposition-Sputteringr 9 PDF

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1
Important issues in FILM
DEPOSITION chapter-9
Film parameters:
Thickness/uniformity
surface flatness/roughness
Composition/grain size
Stress free
Purity
Integrity
2
Low pressure extending the surface reaction
regime to higher temperature (review)
Since h
G
is much
larger at the lower
pressure, mass
transport through the
boundary layer
becomes much less
important compared
to the surface
reaction.
3
High Density Plasma HDPCVD
(review)
Remote high density plasma
with independent RF
substrate bias.
Allows simultaneous deposition
and sputtering for better
planarization and void-free
films (later).
Mostly used for SiO
2
deposition.
4
Physical Vapor Deposition ( PVD)
PVD uses mainly physical
processes to produce reactant
species in the gas phase and to
deposit films.
In evaporation, source material is
heated in high vacuum chamber.
(P <10
-5
torr)
Mostly line-of-sight deposition
since pressure is low.
Deposition rate is determined by
emitted flux and by geometry of
the target.
2
5
Vapor pressure as a function of temperature
6
7 8
Schematic illustration of (a) lattice-matched, (b) strained,
and (c) relaxed hetero-epitaxial structures. Homoepitaxy is
structurally identical to the lattice-matched heteroepitaxy.
Lattice matched and strained layer epitaxy
3
9
Sputter Deposition
Uses plasma to sputter target,
dislodging atoms which then
deposit on wafers to form
film.
Higher pressures than
evaporation - 1-100 mtorr.
Better at depositing alloys and
compounds than evaporation.
Typical sputtering energy range
from 0.5KeV- 5 KeV.
10
Plasma structure and voltage
distribution in DC sputter system
The plasma contains ~ equal
numbers of positive argon ions
and electrons as well as
neutral argon atoms.
Most of voltage drop of the
system (due to applied DC
voltage, Vc) occurs over
cathode sheath.
Ar
+
ions are accelerated
across cathode sheath to the
negatively charged cathode,
striking that electrode
(the target) and sputtering
off atoms (e.g. Al).
These travel through plasma
and deposit on wafers
sitting on anode.
11
Sputter Yield
Rate of sputtering depends on the
sputtering yield, S,
defined as the number of atoms or
molecules ejected from the target per
incident ion.
S is a function of the energy and mass
of ions, and the target material. It is
also a function of incident angle.
S does not vary between target
materials as much as the vapor
pressure does.
Yield vary from ~0.5-3, depending also
on the momentum of ion.
Controlling composition of alloys is
easier with sputtering than with
evaporation.
12
Important process in Sputter deposition
A minimum energy on
the order of 10-
20eV, is needed to
sputter an atom.
Sputtering targets
are generally large
and provide a
wide range of arrival
angles in contrast to
a point
source.
4
13 14
asymmetric depositions
Asymmetric deposition
means that thicker
deposition occurs on
one side of a feature (a
step, for example) than
the other
Target
Wafer
Wafer
Target
How can we
avoid
asymmetric
deposition?
Is there
another way
to reduce any
asymmetry ?
15
9.13. How does the ability to fill the bottom of a narrow trench using sputter
deposition change as the target is moved further away from the wafer?
Neglect any gas phase collision effects.

Answer:

The further away the target, the narrower the arrival angle distribution, similar to
making the target smaller. So n is greater and better filling of the bottom of a
narrow trench is achieved.
16
RF Sputter Deposition
For DC sputtering, target electrode
is conducting.
To sputter dielectric materials use
RF power source.
Due to slower mobility of ions vs.
electrons, the plasma biases
positively with respect to both
electrodes. (DC current must be
zero.) continuous sputtering.
When the electrode areas are not
equal, the field must be higher at
the smaller electrode (higher current
density), to maintain overall current
continuity.
Thus by making the target
electrode smaller, sputtering occurs
"only" on the target.
Wafer electrode can also be
connected to chamber walls, further
increasing V1/V2.
5
17
bias-sputter deposition
In bias sputtering deposition
and sputtering of the wafer
done simultaneously.
The wafer electrode can be
separately biased (RF), which
allows cleaning or controlled
sputtering of the wafer with
Ar
+
ions (bias-sputter
deposition).
This can allow more conformal
deposition because the ions are
highly directional and sputter
selectively.
In bias sputtering , the sputtering
of the wafer is a function of the geometry of
the surface feature, with pointed and slope
feature are more easy to remove than
horizontal or vertical surfaces. This feature
help to planarize the film and allowing
better filling of the hole or trench.
Because of the combine deposition
and etching of the wafer, the net
deposition rate is slow
18
Ionized Sputter Deposition or
HDP Sputtering
In some systems the
depositing atoms
themselves are ionized.
An RF coil around the
plasma induces collisions
in the plasma creating
the ions.
This provides a narrow
distribution of arrival
angles which may be
useful when filling or
coating the bottom of
deep contact hole.
Little deposition at the
bottom of the hole due
to shadowing effect.
19 20
6
21
. Calculate the mean free path of a particle in the gas phase of a deposition system
and estimate the number of collisions it experiences in traveling from the
source to the substrate in each of the cases below. Assume that in each case
the molecular collisional diameter is 0.4 nm, the source-to-substrate distance
is 5 cm, and that the number of collisions is approximately equal to the
source-to-substrate distance divided by the mean free path.

a. An evaporation system in which the pressure is 10
-5
torr and the
temperature is 25C.
b. A sputter deposition system in which the pressure is 3 mtorr and the
temperature is 25C.
c. An LPCVD system in which the pressure is 1 torr and the temperature is
600C.
d. An APCVD system in which the pressure is 1 atm and the temperature is
600C.
9.11
The mean free path of a gas particle is (Eqn. 9.26) =
kT
2d
2
P
where k =
1.36x10
-22
cm
3
atm K
-1
, T is the temperature in K, d is the collision diameter of the
molecule in cm (approximately 4x10
-8
cm for most molecules of interest), and P is
the pressure in atm. The # collisions is approximately equal to the source-to-
substrate distance divided by the mean free path in each case. Plugging in the
numbers gives:
(in cm) =
kT
2d
2
P
=
1.36x10
22
cm
3
atm K
1
T(K)
2 4x10
8
cm
( )
2
P(torr)
760torr / atm
= 1.45x10
5
T(K)
P(torr)

a. 433 cm, 1.2x10
-2
collisions;
b. 1.44 cm, 3.5 collisions;
c. 0.013 cm, 392 collisions;
d. 1.7x10
-5
cm, 3.0x10
5
collisions
22
Summary of the key ideas
In this chapter we have examined how thin films are deposited
as part of the fabrication of IC.
Important issues in thin film deposition include physical and
chemical properties of the films, step converge and filling of
the holes or trenches.
In the simple model for CVD presented, the deposition process
is seen to be limited by surface reaction or by mass transfer.
At low pressure the mass transfer is not a limiting step, and the
surface reaction become rate limiting.
In PVD arrival angle distribution of the source material at the
wafer surface is important.
Shadowing by topographical features can be very important in
PVD method.
Concurrent sputtering and redeposition of the material along
with the direct deposition of ionized species can lead to good
gap or hole filling of relatively high aspect ration features.

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