SS8 550

TRANSISTOR(PNP)
SOT-323
FEATURES
Complimentary to SS8050

MARKING: Y2 1. Base
2. Emitter
3. Collector

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol Parameter Value Units

VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -1.5 A
PC Collector Power Dissipation 0.2 W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-100μA, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V
Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 μA
Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 μA
Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 μA
hFE(1) VCE=-1V, IC=-100mA 120 400
DC current gain
hFE(2) VCE=-1V, IC=-800mA 40
Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB=-80mA -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V
Base-emitter on voltage VBE(on) IC=-1V,VCE=-10mA -1 V
Base-emitter positive favor voltage VBEF IB=-1A -1.55 V
VCE=-10V,IC=-50mA,
Transition frequency fT 100 MHz
f=30MHz
output capacitance Cob VCB=-10V,IE=0,f=1MHz 20 pF

CLASSIFICATION OF hFE(1)
Rank L H J

Range 120-200 200-350 300-400

１　
JinYu www.htsemi.com
semiconductor

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 SS8 550

-0.5 1000
VCE = -1V
IB=-4.0mA
-0.4 IB=-3.5mA
IC[A], COLLECTOR CURRENT

hFE, DC CURRENT GAIN

IB=-3.0mA 100
-0.3 IB=-2.5mA

IB=-2.0mA
-0.2 IB=-1.5mA
10

IB=-1.0mA
-0.1

IB=-0.5mA

1
-0.4 -0.8 -1.2 -1.6 -2.0 -0.1 -1 -10 -100 -1000

VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT

VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE

-10000 -100
IC=10IB VCE = -1V
IC[mA], COLLECTOR CURRENT

-1000 -10

VBE(sat)

-100 -1

VCE(sat)

-10 -0.1
-0.1 -1 -10 -100 -1000 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2

IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE

fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT

100 1000
f=1MHz VCE=-10V
IE=0
Cob[pF], CAPACITANCE

10 100

1 10
-1 -10 -100 -1000 -1 -10 -100 -1000

VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT

２
JinYu www.htsemi.com
semiconductor

Ｄａｔｅ：２０１１／０５