Scribd Logo
Upload

Welcome to Scribd!

  • 11 views

    Ss 9012

    Uploaded by

    ali Abbas
    This document provides specifications for the SS9012 transistor. It is a PNP epitaxial silicon transistor intended for use in class B push-pull radio amplifiers. The document lists maximum ratings, electrical characteristics, and packaging details for the transistor.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Ss 9012

    Uploaded by

    ali Abbas
    11 views3 pages
    This document provides specifications for the SS9012 transistor. It is a PNP epitaxial silicon transistor intended for use in class B push-pull radio amplifiers. The document lists maximum ratings, electrical characteristics, and packaging details for the transistor.

    Original Title

    ss9012

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document provides specifications for the SS9012 transistor. It is a PNP epitaxial silicon transistor intended for use in class B push-pull radio amplifiers. The document lists maximum ratings, electrical characteristics, and packaging details for the transistor.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    11 views3 pages

    Ss 9012

    Uploaded by

    ali Abbas
    This document provides specifications for the SS9012 transistor. It is a PNP epitaxial silicon transistor intended for use in class B push-pull radio amplifiers. The document lists maximum ratings, electrical characteristics, and packaging details for the transistor.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    You are on page 1of 3

    SS9012

    SS9012

    1W Output Amplifier of Potable Radios in


    Class B Push-pull Operation.
    • High total power dissipation. (PT=625mW)
    • High Collector Current. (IC= -500mA)
    • Complementary to SS9013
    • Excellent hFE linearity.
    1 TO-92
    1. Emitter 2. Base 3. Collector

    PNP Epitaxial Silicon Transistor


    Absolute Maximum Ratings Ta=25°C unless otherwise noted
    Symbol Parameter Ratings Units
    VCBO Collector-Base Voltage -40 V
    VCEO Collector-Emitter Voltage -20 V
    VEBO Emitter-Base Voltage -5 V
    IC Collector Current -500 mA
    PC Collector Power Dissipation 625 mW
    TJ Junction Temperature 150 °C
    TSTG Storage Temperature -55 ~ 150 °C

    Electrical Characteristics Ta=25°C unless otherwise noted


    Symbol Parameter Test Condition Min. Typ. Max. Units
    BVCBO Collector-Base Breakdown Voltage IC = -100µA, IE =0 -40 V
    BVCEO Collector-Emitter Breakdown Voltage IC = -1mA, IB =0 -20 V
    BVEBO Emitter-Base Breakdown Voltage IE = -100µA, IC =0 -5 V
    ICBO Collector Cut-off Current VCB = -25V, IE =0 -100 nA
    IEBO Emitter Cut-off Current VEB = -3V, IC =0 -100 nA
    hFE1 DC Current Gain VCE = -1V, IC = -50mA 64 120 202
    hFE2 VCE = -1V, IC = -500mA 40 90
    VCE (sat) Collector-Emitter Saturation Voltage IC = -500mA, IB = -50mA -0.18 -0.6 V
    VBE (sat) Base-Emitter Saturation Voltage IC = -500mA, IB = -50mA -0.95 -1.2 V
    VBE (on) Base-Emitter On Voltage VCE = -1V, IC = -10mA -0.6 -0.67 -0.7 V

    hFE Classification
    Classification D E F G H
    hFE1 64 ~ 91 78 ~ 112 96 ~ 135 112 ~ 166 144 ~ 202

    ©2002 Fairchild Semiconductor Corporation Rev. A3, May 2002


    SS9012
    Typical Characteristics

    -50 1000
    IB=-300µA
    VCE = -1V
    IB=-250µA
    IC[mA], COLLECTOR CURRENT

    -40

    hFE, DC CURRENT GAIN


    IB=-200µA

    -30
    IB=-150µA
    100

    IB=-100µA
    -20

    IB=-50µA
    -10

    10
    -0 -10 -100 -1000
    -0 -10 -20 -30 -40 -50

    VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT

    Figure 1. Static Characteristic Figure 2. DC current Gain

    fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 1000


    -1000
    VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

    VCE=-6V
    VBE(sat)

    100

    -100
    VCE(sat)

    10

    IC=10IB
    -10 1
    -10 -100 -1000 -1 -10 -100 -1000 -10000

    IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT

    Figure 3. Base-Emitter Saturation Voltage Figure 4. Current Gain Bandwidth Product


    Collector-Emitter Saturation Voltage

    ©2002 Fairchild Semiconductor Corporation Rev. A3, May 2002


    SS9012
    Package Demensions

    TO-92
    +0.25
    4.58 –0.15

    4.58 ±0.20

    0.46 ±0.10
    14.47 ±0.40

    +0.10
    1.27TYP 1.27TYP 0.38 –0.05
    [1.27 ±0.20] [1.27 ±0.20]

    3.60 ±0.20
    3.86MAX

    (0.25)
    +0.10
    0.38 –0.05
    1.02 ±0.10

    (R2.29)

    Dimensions in Millimeters

    ©2002 Fairchild Semiconductor Corporation Rev. A3, May 2002

    You might also like