JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

, LTD

JC(T SOT-323 Plastic-Encapsulate Transistors

SS8050 TRANSISTOR (NPN)

SOT-323
FEATURES
Complimentary to SS8550 1. BASE
2. EMITTER
MARKING: Y1
3. COLLECTOR

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 1.5 A
PC Collector Power Dissipation 250 mW
RΘJA Thermal Resistance From Junction To Ambient 500 ℃/W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55～+150 ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit

Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 40 V

Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V

Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V

Collector cut-off current ICBO VCB=40V, IE=0 0.1 μA

Collector cut-off current ICEO VCE=20V, IE=0 0.1 μA

Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA

hFE(1) VCE=1V, IC= 100mA 120 400

DC current gain
hFE(2) VCE=1V, IC= 800mA 40

Collector-emitter saturation voltage VCE(sat) IC=800mA, IB= 80mA 0.5 V

Base-emitter saturation voltage VBE(sat) IC=800mA, IB= 80mA 1.2 V

VCE=10V, IC= 50mA,
Transition frequency fT 100 MHz
f=30MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 15 pF

CLASSIFICATION OF hFE(1)
Rank L H J
Range 120-200 200-350 300-400

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 Typical Characteristics
Static Characteristic hFE —— IC
0.30 1000
1000uA
COMMON
900uA EMITTER
Ta=25℃ Ta=100℃
0.25
800uA
(A)

hFE
700uA
IC

0.20
Ta=25℃

DC CURRENT GAIN
COLLECTOR CURRENT

600uA

0.15 500uA 100

0.10 400uA

300uA
0.05
200uA

IB=100uA VCE=1V
0.00 10
0.0 0.5 1.0 1.5 2.0 1 10 100 1000 1500

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA)

VCEsat —— IC VBEsat —— IC
1000 2000
COLLECTOR-EMITTER SATURATION

BASE-EMITTER SATURATION 1000

Ta=25℃
VOLTAGE VBEsat (mV)
VOLTAGE VCEsat (mV)

Ta=100℃
100

Ta=100℃
Ta=25℃

10

β=10 β=10
1 100
1 10 100 1000 1500 1 10 100 1000 1500
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)

VBE —— IC Cob/ Cib —— VCB/ VEB

1500 200
1000 f=1MHz
IE=0/IC=0
100
Ta=25℃
Cib
(pF)
(mA)

Ta=100℃
100
C
IC

Cob
CAPACITANCE
COLLCETOR CURRENT

Ta=25℃
10

10

VCE=1V
1 1
200 300 400 500 600 700 800 900 1000 0.1 1 10 20
BASE-EMMITER VOLTAGE VBE (mV) REVERSE VOLTAGE V (V)

fT —— IC PC —— Ta
1000 300
(MHz)

250
COLLECTOR POWER DISSIPATION
fT

100 200
PC (mW)
TRANSITION FREQUENCY

150

10 100

50
VCE=10V
Ta=25℃
1 0
1 10 100 0 25 50 75 100 125 150

COLLECTOR CURRENT IC (mA) AMBIENT TEMPERATURE Ta (℃ )

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 SOT-323 Package Outline Dimensions

Dimensions In Millimeters Dimensions In Inches

Symbol
Min Max Min Max
A 0.900 1.100 0.035 0.043
A1 0.000 0.100 0.000 0.004
A2 0.900 1.000 0.035 0.039
b 0.200 0.400 0.008 0.016
c 0.080 0.150 0.003 0.006
D 2.000 2.200 0.079 0.087
E 1.150 1.350 0.045 0.053
E1 2.150 2.450 0.085 0.096
e 0.650 TYP 0.026 TYP
e1 1.200 1.400 0.047 0.055
L 0.525 REF 0.021 REF
L1 0.260 0.460 0.010 0.018
θ 0° 8° 0° 8°

SOT-323 Suggested Pad Layout

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SOT-323 Tape and Reel

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