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Schmitt Trigger

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‫‪١‬‬ ‫ﻣﺪﺍﺭ ﻫﺎﻱ ﺍﺷﻤﻴﺖ ﺗﺮﻳﮕﺮ‬

‫ﺁﺷﻨﺎﻳﻲ ﺑﺎ ﻣﺪﺍﺭﻫﺎﻱ ﺍﺷﻤﻴﺖ ﺗﺮﻳﮕﺮ‬ ‫ﺑﺨﺶ ‪١‬‬

‫ﺣﺘﻤ ﹰﺎ ﺗﺎﻛﻨﻮﻥ ﺑﺎ ﻣﺪﺍﺭﻫﺎﻱ ﺗﻚﺳﻮﻳﻴﭻ )‪ (Single Switch‬ﺁﺷﻨﺎ ﺷﺪﻩﺍﻳﺪ‪ .‬ﻭﻳﮋﮔﻲ ﺍﺻﻠﻲ ﺍﻳﻦ‬
‫ﻼ ﺍﮔﺮ ﻣﺪﺍﺭﻱ ﺩﺍﺭﺍﻱ ﻧﻘﻄﻪ ﺳﻮﻳﻴﭻ‬ ‫ﻣﺪﺍﺭﻫﺎ ﺍﻳﻦ ﺍﺳﺖ ﻛﻪ ﺩﺍﺭﺍﻱ ﻳﻚ ﻧﻘﻄﻪ ﺳﻮﻳﻴﭻ ﻫﺴﺘﻨﺪ؛ ﻣﺜ ﹰ‬
‫ﻭﻟﺘﺎﮊﻱ ‪ Vt‬ﺑﺎﺷﺪ‪ ،‬ﻭﻗﺘﻲ ﺳﻄﺢ ﻭﻟﺘﺎﮊ ﻭﺭﻭﺩﻱ ﺍﺯ ‪ Vt‬ﮔﺬﺭ ﻣﻲﻛﻨﺪ‪ ،‬ﺧﺮﻭﺟﻲ ﺗﻐﻴﻴﺮ ﺧﻮﺍﻫﺪﻛﺮﺩ‪.‬‬
‫ﺍﻣﺎ ﺩﺭ ﺑﺴﻴﺎﺭﻱ ﺍﺯ ﻣﻮﺍﺭﺩ ﻣﺎ ﺑﻪ ﻣﺪﺍﺭﻫﺎﻱ ﺩﻭ ﺗﻐﻴﻴﺮﻩ )‪ (Double Switching‬ﻧﻴﺎﺯ ﺩﺍﺭﻳﻢ‪ .‬ﺍﺯ‬
‫ﺟﻤﻠﻪ ﻛﺎﺭﺑﺮﺩﻫﺎﻱ ﺍﻳﻦ ﻣﺪﺍﺭﻫﺎ ﺩﺭ ﺳﻨﺴﻮﺭﻫﺎ )‪ (Sensors‬ﻣﻲﺑﺎﺷﺪ‪ .‬ﻣﺜ ﹰ‬
‫ﻼ ﺳﻨﺴﻮﺭ ﻓﺸﺎﺭ ﺑﺎﻳﺪ‬
‫ﻫﻨﮕﺎﻡ ﺯﻳﺎﺩﺗﺮﺷﺪﻥ ﻓﺸﺎﺭ ﺩﺍﺧﻞ ﺗﺎﻧﻚ ﺍﺯ ﻳﻚ ﺣﺪ ﺍﺳﺘﺎﻧﺪﺍﺭﺩ‪ ،‬ﺷﻴﺮ ﺑﺨﺎﺭ ﺭﺍ ﺑﺒﻨﺪﺩ ﻳﺎ ﻫﻨﮕﺎﻡ‬
‫ﻛﻤﺘﺮ ﺷﺪﻥ ﻓﺸﺎﺭ ﺍﺯ ﻳﻚ ﺣﺪ ﭘﺎﻳﻴﻦ ﺷﻴﺮ ﺭﺍ ﺑﺎﺯﻛﻨﺪ‪ .‬ﻭﺍﺿﺢ ﺍﺳﺖ ﻛﻪ ﺩﺭ ﺍﻳﻦ ﻣﻮﺍﺭﺩ‪ ،‬ﻣﺪﺍﺭﻫﺎﻱ‬
‫ﺗﻚﺳﻮﻳﻴﭻ ﺑﺮﺍﻱ ﻃﺮﺍﺣﻲ ﻣﺪﺍﺭ ﻛﻨﺘﺮﻟﻲ ﻣﻨﺎﺳﺐ ﻧﻴﺴﺘﻨﺪ‪ .‬ﻭﻳﮋﮔﻲ ﻣﻬﻤﻲ ﻛﻪ ﺩﺭ ﻣﺪﺍﺭﻫﺎﻱ‬
‫ﺩﻭﺗﻐﻴﻴﺮﻩ ﻭﺟﻮﺩ ﺩﺍﺭﺩ ﻭ ﺑﻪ ﺁﻥ ﺍﺷﺎﺭﻩ ﺷﺪ‪ ،‬ﻫﻴﺴﺘﺮﺯﻳﺲ ﻧﺎﻡ ﺩﺍﺭﺩ‪ .‬ﻫﻴﺴﺘﺮﺯﻳﺲ ﺑﻪ ﻣﻌﻨﻲ‬
‫ﺍﺧﺘﻼﻑ ﺑﻴﻦ ﺩﻭ ﻧﻘﻄﻪ ﺳﻮﻳﻴﭻ ﺑﺎﻻ ) ‪ ( Upper Trigger Point = UTP‬ﻭ ﻧﻘﻄﻪ ﺳﻮﻳﻴﭻ‬
‫ﭘﺎﻳﻴﻦ ) ‪ ( Lower Trigger Point = LTP‬ﺍﺳﺖ‪.‬‬
‫ﻳﻜﻲ ﺍﺯ ﻣﻬﻤﺘﺮﻳﻦ ﻣﺪﺍﺭﺍﺕ ﺩﻭﺗﻐﻴﻴﺮﻩ‪ ،‬ﻣﺪﺍﺭ ﺍﺷﻤﻴﺖ ﺗﺮﻳﮕﺮ ﻣﻲﺑﺎﺷﺪ‪ .‬ﺍﻳﻦ ﻣﺪﺍﺭ ﻫﻢ ﺑﺎ‬
‫ﺗﺮﺍﻧﺰﻳﺴﺘﻮﺭ ﻭ ﻫﻢ ﺑﺎ ‪ op-amp‬ﻗﺎﺑﻞ ﭘﻴﺎﺩﻩﺳﺎﺯﻱ ﺍﺳﺖ ﻛﻪ ﻧﻮﻉ ﺗﺮﺍﻧﺰﻳﺴﺘﻮﺭﻱ ﺁﻥ ﺩﺭ ﺍﻳﻨﺠﺎ‬
‫ﻣﻮﺭﺩ ﺑﺤﺚ ﻗﺮﺍﺭ ﮔﺮﻓﺘﻪ ﺍﺳﺖ‪ .‬ﺑﺮﺭﺳﻲ ﻧﻮﻉ ﺩﻳﮕﺮ ﺁﻥ ﺑﻪﻋﻨﻮﺍﻥ ﺗﻤﺮﻳﻦ ﺩﺭ ﺍﻧﺘﻬﺎﻱ ﺑﺨﺶ ﺁﻣﺪﻩ‬
‫ﺍﺳﺖ‪.‬‬
‫ﺑﺮﺍﻱ ﺍﻧﺠﺎﻡ ﺁﺯﻣﺎﻳﺸﻬﺎﻱ ﺍﻳﻦ ﺑﺨﺶ‪ ،‬ﺍﺑﺘﺪﺍ ﻗﺴﻤﺖ ﺗﺌﻮﺭﻱ ﺭﺍ ﺑﻪ ﺩﻗﺖ ﻣﻄﺎﻟﻌﻪ ﻛﻨﻴﺪ‪ .‬ﻗﺒﻞ ﺍﺯ‬
‫ﺍﻧﺠﺎﻡ ﺁﺯﻣﺎﻳﺶ ﻣﻘﺎﺩﻳﺮ ﻋﻨﺎﺻﺮ ﻣﻮﺭﺩ ﺍﺳﺘﻔﺎﺩﻩ ﺭﺍ ﻣﺤﺎﺳﺒﻪ ﻛﻨﻴﺪ ﻭ ﺩﻗﺖ ﻧﺘﺎﻳﺞ ﺭﺍ ﺑﺎ ﻣﺤﺎﺳﺒﺎﺕ‬
‫ﺧﻮﺩ ﻣﻘﺎﻳﺴﻪ ﻛﻨﻴﺪ ﻭ ﺩﺭ ﮔﺰﺍﺭﺵ ﻛﺎﺭ ﺧﻮﺩ ﺫﻛﺮ ﻛﻨﻴﺪ‪.‬‬
‫ﭘﺎﺳﺦ ﭘﺮﺳﺸﻬﺎﻱ ﻣﺘﻦ ﺭﺍ ﻧﻴﺰ ﺩﺭ ﮔﺰﺍﺭﺵ ﻛﺎﺭ ﺧﻮﺩ ﺑﻴﺎﻭﺭﻳﺪ‪.‬‬

‫ﻣﺪﺍﺭﺍﺕ ﺍﺷﻤﻴﺖ ﺗﺮﻳﮕﺮ ﺗﺮﺍﻧﺰﻳﺴﺘﻮﺭﻱ ‪:‬‬


‫ﺑﻪ ﺷﻜﻞ ﺯﻳﺮ ﺩﻗﺖ ﻛﻨﻴﺪ ‪:‬‬
‫‪٢‬‬ ‫ﻣﺪﺍﺭ ﻫﺎﻱ ﺍﺷﻤﻴﺖ ﺗﺮﻳﮕﺮ‬

‫ﺩﻭ ﺗﺮﺍﻧﺰﻳﺴﺘﻮﺭ ‪ Q1‬ﻭ ‪ Q2‬ﻣﻘﺎﻭﻣﺖ ﺍﻣﻴﺘﺮ ﻣﺸﺘﺮﻙ ﺩﺍﺭﻧﺪ‪ .‬ﻭﻟﺘﺎﮊ ﺑﻴﺲ ‪ Q2‬ﺍﺯ ﻛﻠﻜﺘﻮﺭ ‪ Q1‬ﻭ‬
‫ﺗﻮﺳﻂ ﻣﻘﺴﻢ ﻭﻟﺘﺎﮊ ‪ R1‬ﻭ ‪ R2‬ﺗﻐﺬﻳﻪ ﻣﻲﺷﻮﺩ‪ .‬ﺁﺭﺍﻳﺶ ﻣﺪﺍﺭ ﺑﻪ ﺻﻮﺭﺗﻲ ﺍﺳﺖ ﻛﻪ ﻫﻨﮕﺎﻡ‬
‫ﺭﻭﺷﻦ ﺑﻮﺩﻥ ‪ Q2 ، Q1‬ﺧﺎﻣﻮﺵ ﻭ ﻫﻨﮕﺎﻡ ﺭﻭﺷﻦ ﺑﻮﺩﻥ ‪ Q1 ، Q2‬ﺧﺎﻣﻮﺵ ﺍﺳﺖ‪.‬‬
‫ﻭﻗﺘﻲ ﻭﻟﺘﺎﮊ ﻭﺭﻭﺩﻱ ﺻﻔﺮ ﺍﺳﺖ‪ Q1 ،‬ﺧﺎﻣﻮﺵ ﻭ ﺩﺭ ﻧﺘﻴﺠﻪ ﻭﻟﺘﺎﮊ ﻛﻠﻜﺘﻮﺭ ﺁﻥ ﺑﺎﻻﺧﻮﺍﻫﺪﺑﻮﺩ‪.‬‬
‫ﺍﻳﻦ ﻭﻟﺘﺎﮊ ﺍﺯ ﻃﺮﻳﻖ ‪ R1‬ﻭ ‪ R2‬ﺑﻪ ﺑﻴﺲ ‪ Q2‬ﻣﻨﺘﻘﻞ ﻣﻲﺷﻮﺩ ﻭ ‪ Q2‬ﺭﺍ ﺭﻭﺷﻦ ﻣﻲﻛﻨﺪ‪ .‬ﻭﻟﺘﺎﮊ‬
‫ﺧﺮﻭﺟﻲ ﺩﺭ ﺍﻳﻦ ﺣﺎﻟﺖ ﺑﺮﺍﺑﺮ ‪ Vcc – Rc2 * I2‬ﺍﺳﺖ‪.‬‬
‫ﻭﻗﺘﻲ ﻭﻟﺘﺎﮊ ﻭﺭﻭﺩﻱ ﺯﻳﺎﺩ ﻣﻲﺷﻮﺩ‪ ،‬ﻭﻟﺘﺎﮊ ﻛﻠﻜﺘﻮﺭ ‪ Q1‬ﺍﻓﺖ ﻛﺮﺩﻩ ﻭ ﻭﻟﺘﺎﮊ ﺍﻣﻴﺘﺮ ﺁﻥ )ﻛﻪ ﺑﺎ‬
‫ﺍﻣﻴﺘﺮ ‪ Q2‬ﻣﺸﺘﺮﻙ ﺍﺳﺖ( ﺷﺮﻭﻉ ﺑﻪﺯﻳﺎﺩ ﺷﺪﻥ ﻣﻲﻛﻨﺪ‪ .‬ﺑﻨﺎﺑﺮﺍﻳﻦ ﺯﻳﺎﺩ ﺷﺪﻥ ﻭﻟﺘﺎﮊ ﻭﺭﻭﺩﻱ ﺩﻭ‬
‫ﺗﻐﻴﻴﺮ ﺑﻪﻫﻤﺮﺍﻩ ﺩﺍﺭﺩ ‪:‬‬
‫ﻳﻜﻲ ﻛﺎﻫﺶ ﻭﻟﺘﺎﮊ ﺑﻴﺲ ‪ Q2‬ﺑﻪﺩﻟﻴﻞ ﻛﺎﻫﺶ ﻭﻟﺘﺎﮊ ﻛﻠﻜﺘﻮﺭ ‪ Q1‬ﻭ ﺩﻳﮕﺮ ﺍﻓﺰﺍﻳﺶ ﻭﻟﺘﺎﮊ ﺍﻣﻴﺘﺮ‬
‫‪ Q2‬ﻛﻪ ﺍﻳﻦ ﺩﻭ ﺗﻐﻴﻴﺮ ﺑﺎﻋﺚ ﻛﺎﻫﺶ ﺳﺮﻳﻊ ﻭﻟﺘﺎﮊ ﺑﻴﺲ–ﺍﻣﻴﺘﺮ ‪ Q2‬ﺧﻮﺍﻫﻨﺪﺷﺪ‪ .‬ﺍﻳﻦ ﺍﺛﺮ ﻛﻪ ﺑﻪ‬
‫ﺗﻐﻴﻴﺮ ﺣﺎﻟﺖ ﻣﺪﺍﺭ ﺳﺮﻋﺖ ﻣﻲﺑﺨﺸﺪ‪ ،‬ﻧﻮﻋﻲ ﻓﻴﺪﺑﻚ ﻣﺜﺒﺖ ﺍﺳﺖ‪ .‬ﺑﺎ ﻛﺎﻫﺶ ﻭﻟﺘﺎﮊ ﺑﻴﺲ‪-‬‬
‫ﺍﻣﻴﺘﺮ‪ ،‬ﺳﺮﺍﻧﺠﺎﻡ ‪ Q2‬ﺧﺎﻣﻮﺵ ﻣﻲﺷﻮﺩ ﻭ ﻭﻟﺘﺎﮊ ﺧﺮﻭﺟﻲ ﺑﻪ ‪ Vcc‬ﺧﻮﺍﻫﺪ ﺭﺳﻴﺪ‪ .‬ﺍﻛﻨﻮﻥ ﻫﺮﭼﻪ‬
‫ﻭﻟﺘﺎﮊ ﻭﺭﻭﺩﻱ ﺭﺍ ﺯﻳﺎﺩ ﻛﻨﻴﻢ‪ ،‬ﺩﺭ ﺧﺮﻭﺟﻲ ﺗﻐﻴﻴﺮﻱ ﺣﺎﺻﻞ ﻧﺨﻮﺍﻫﺪ ﺷﺪ‪.‬‬
‫ﺩﻭﺑﺎﺭﻩ ﺑﻪ ﺣﺎﻟﺖ ﺍﻭﻝ ﺑﺎﺯﻣﻲﮔﺮﺩﻳﻢ‪ .‬ﻓﺮﺽ ﻛﻨﻴﺪ ﺗﺮﺍﻧﺰﻳﺴﺘﻮﺭ ‪ Q1‬ﺭﻭﺷﻦ ﻭ ‪ Q2‬ﺧﺎﻣﻮﺵ ﺍﺳﺖ‪.‬‬
‫ﺑﺎ ﻛﺎﻫﺶ ﻭﻟﺘﺎﮊ ﻭﺭﻭﺩﻱ ﻭ ﮔﺬﺭ ﺁﻥ ﺍﺯ ‪ LTP‬ﺣﺎﻟﺖ ﻣﺪﺍﺭ ﺑﻪﺳﺮﻋﺖ ﺗﻐﻴﻴﺮ ﺧﻮﺍﻫﺪ ﻛﺮﺩ‪.‬‬

‫ﭘﺮﺳﺶ ‪ :‬ﺍﺛﺮ ﻓﻴﺪﺑﻚ ﻣﺜﺒﺖ ﺩﺭ ﺍﻳﻦ ﺣﺎﻟﺖ ﺭﺍ ﺷﺮﺡ ﺩﻫﻴﺪ‪.‬‬

‫ﻃﺮﺍﺣﻲ ﻣﺪﺍﺭ ﺑﺮﺍﻱ ﺩﺳﺘﻴﺎﺑﻲ ﺑﻪ ﻧﻘﺎﻁ ﺳﻮﻳﻴﭻ ﻣﻌﻠﻮﻡ ‪:‬‬


‫‪٣‬‬ ‫ﻣﺪﺍﺭ ﻫﺎﻱ ﺍﺷﻤﻴﺖ ﺗﺮﻳﮕﺮ‬

‫ﻃﺮﺍﺣﻲ ﻣﺪﺍﺭ ﺑﺮﺍﻱ ﺩﺳﺘﻴﺎﺑﻲ ﺑﻪ ﻳﻚ ‪ UTP‬ﻣﻌﻠﻮﻡ ﺑﺴﻴﺎﺭ ﺳﺎﺩﻩ ﺍﺳﺖ‪ .‬ﺑﺮﺍﻱ ﺍﻳﻦﻛﺎﺭ ﻓﺮﺽ‬
‫ﻣﻲﻛﻨﻴﻢ ‪ Q1‬ﺧﺎﻣﻮﺵ ﻭ ﺩﺭ ﺁﺳﺘﺎﻧﻪ ﺭﻭﺷﻦ ﺷﺪﻥ ﺍﺳﺖ‪.‬‬

‫ﭘﺮﺳﺶ ‪ :‬ﻧﺸﺎﻥ ﺩﻫﻴﺪ ﻛﻪ ﺩﺭ ﺍﻳﻦ ﺣﺎﻟﺖ ﻭﻟﺘﺎﮊ ﺑﻴﺲ ﻫﺮﺩﻭ ﺗﺮﺍﻧﺰﻳﺴﺘﻮﺭ ﺑﺎ ‪ UTP‬ﺑﺮﺍﺑﺮ ﺍﺳﺖ‪.‬‬

‫ﺍﺳﺎﺱ ﻛﺎﺭ‪ ،‬ﺍﻧﺘﺨﺎﺏ ﻣﻘﺎﻭﻣﺘﻬﺎﻱ ‪ R1‬ﻭ ‪ R2‬ﻭ ‪ Rc1‬ﺑﺮﺍﻱ ﺍﻳﺠﺎﺩ ﻳﻚ ﻭﻟﺘﺎﮊ ﺑﺎﻳﺎﺱ ﭘﺎﻳﺪﺍﺭ ﺩﺭ‬
‫ﺑﻴﺲ ‪ Q2‬ﺍﺳﺖ‪ .‬ﺍﺯ ﺁﻧﺠﺎ ﻛﻪ ‪ R1‬ﻭ ‪ R2‬ﺑﺎﻳﺪ ﺁﻥﻗﺪﺭ ﺑﺰﺭﮒ ﺑﺎﺷﻨﺪ ﺗﺎ ﺍﺛﺮ ﺑﺎﺭﮔﺬﺍﺭﻱ ﺁﻧﻬﺎ ﺑﺮ‬
‫‪ Rc1‬ﺣﺪﺍﻗﻞ ﺑﺎﺷﺪ‪ ،‬ﺑﻨﺎﺑﺮﺍﻳﻦ ﺑﺎ ﺗﻘﺮﻳﺐ‪ ،‬ﺟﺮﻳﺎﻥ ﺍﻣﻴﺘﺮ ﺭﺍ ﺩﻩ ﺑﺮﺍﺑﺮ ﺟﺮﻳﺎﻥ ﻣﻘﺎﻭﻣﺖ ‪ R2‬ﺩﺭ‬
‫ﻧﻈﺮﻣﻲﮔﻴﺮﻳﻢ‪.‬‬
‫ﺑﺮﺍﻱ ﻃﺮﺍﺣﻲ ﻣﺪﺍﺭ ﺑﻪﺍﺯﺍﻱ ‪ LTP‬ﻣﻌﻠﻮﻡ‪ ،‬ﺍﺑﺘﺪﺍ ﻣﺪﺍﺭ ﺭﺍ ﺗﺎ ﻣﺮﺣﻠﻪ ﺍﻧﺘﺨﺎﺏ ‪ Rc1‬ﺑﻪ ﺍﺯﺍﻱ ‪UTP‬‬
‫ﻣﺸﺨﺺ ﻃﺮﺍﺣﻲ ﻣﻲﻛﻨﻴﻢ‪ .‬ﺑﺮﺍﻱ ‪ LTP‬ﻣﻌﻠﻮﻡ‪ ،‬ﺑﺎﻳﺪ ﺣﺎﻟﺘﻲﺭﺍ ﺩﺭ ﻧﻈﺮ ﺑﮕﻴﺮﻳﻢ ﻛﻪ ‪ Q1‬ﺭﻭﺷﻦ‬
‫ﻭ ‪ Q2‬ﺧﺎﻣﻮﺵ ﻭ ﺩﺭﺁﺳﺘﺎﻧﻪ ﺭﻭﺷﻦ ﺷﺪﻥ ﺍﺳﺖ‪.‬ﺩﺭ ﺍﻳﻦﺣﺎﻟﺖ ﻭﻟﺘﺎﮊ ﺑﻴﺲﺩﻭﺗﺮﺍﻧﺰﻳﺴﺘﻮﺭ ﺑﺮﺍﺑﺮ‬
‫‪ LTP‬ﺧﻮﺍﻫﺪ ﺑﻮﺩ‪.‬‬

‫ﺁﺯﻣﺎﻳﺶ ‪: ١-١‬‬
‫ﻳﻚ ﻣﺪﺍﺭ ﺍﺷﻤﻴﺖ ﺗﺮﻳﮕﺮ ﺑﺎ ﻣﺸﺨﺼﺎﺕ )‪ UTP = 5(v‬ﻭ )‪ LTP = 2(v‬ﻃﺮﺍﺣﻲ ﻛﻨﻴﺪ‪ .‬ﺍﺯ‬
‫ﺗﺮﺍﻧﺰﻳﺴﺘﻮﺭ ‪ 2N3904‬ﻭ )‪ Vcc = 12(v‬ﺍﺳﺘﻔﺎﺩﻩ ﻛﻨﻴﺪ‪ .‬ﺗﻤﺎﻡ ﻣﺤﺎﺳﺒﺎﺕ ﻣﻮﺭﺩ ﻧﻴﺎﺯ ﺑﺮﺍﻱ‬
‫ﻃﺮﺍﺣﻲ ﻣﺪﺍﺭ ﻭ ﻧﻴﺰ ﻣﻘﺎﺩﻳﺮ ﺍﻧﺪﺍﺯﻩﮔﻴﺮﻱ ﺷﺪﻩ ﻭﻟﺘﺎﮊﻫﺎﻱ ﺧﺮﻭﺟﻲ ﺩﺭ ﺩﻭ ﺣﺎﻟﺖ ﺭﻭﺷﻦ ﻭ‬
‫ﺧﺎﻣﻮﺵ ﺭﺍ ﺩﺭ ﮔﺰﺍﺭﺵ ﻛﺎﺭ ﺧﻮﺩ ﺑﻴﺎﻭﺭﻳﺪ‪.‬‬

‫ﭘﺮﺳﺶ ‪ :‬ﺑﻪ ﻋﻠﺖ ﺍﻧﺘﺨﺎﺏ ﻣﻘﺎﺩﻳﺮ ﺍﺳﺘﺎﻧﺪﺍﺭﺩ‪ ،‬ﻧﻘﺎﻁ ﺳﻮﻳﻴﭻ ﺩﻗﻴﻘ ﹰﺎ ﻣﻄﺎﺑﻖ ﻣﻘﺎﺩﻳﺮ ﺧﻮﺍﺳﺘﻪ‬
‫ﺷﺪﻩ ﻧﻴﺴﺖ‪ .‬ﺍﻳﻦ ﺍﺧﺘﻼﻑ ﺭﺍ ﺩﺭ ﻣﻮﺭﺩ ﻣﺪﺍﺭ ﺧﻮﺩ ﻣﺤﺎﺳﺒﻪ ﻛﻨﻴﺪ ﻭ ﻧﺸﺎﻥ ﺩﻫﻴﺪ ﭼﮕﻮﻧﻪ ﺑﺎ‬
‫ﺍﺳﺘﻔﺎﺩﻩ ﺍﺯ ﻋﻨﺎﺻﺮ ﻣﺘﻐﻴﺮ ﻣﻲﺗﻮﺍﻥ ﺑﻪ ﺩﻗﺖ ﺩﻟﺨﻮﺍﻩ ﺩﺳﺖﻳﺎﻓﺖ‪.‬‬

‫ﺍﺛﺮ ﺧﺎﺯﻥ ﺗﺴﺮﻳﻊ ‪:‬‬


‫ﺑﺮﺍﻱ ﺳﺮﻋﺖ ﺑﺨﺸﻴﺪﻥ ﺑﻪ ﺭﻭﺷﻦ ﺷﺪﻥ ﺗﺮﺍﻧﺰﻳﺴﺘﻮﺭ‪ ،‬ﻣﻲﺗﻮﺍﻥ ﺁﻥ ﺭﺍ ﺑﺎ ﺍﺿﺎﻓﻪ ﺗﺤﺮﻳﻚ ﺭﻭﺷﻦ‬
‫ﻛﺮﺩ )ﻳﻌﻨﻲ ﺟﺮﻳﺎﻥ ﺑﻴﺲ ﺍﺯ ﻣﻘﺪﺍﺭ ﻻﺯﻡ ﺑﺮﺍﻱ ﺍﺷﺒﺎﻉ ﺑﺰﺭﮔﺘﺮ ﺑﺎﺷﺪ( ﺍﻣﺎ ﺍﻳﻦ ﻛﺎﺭ ﺑﺎﻋﺚ‬
‫ﻃﻮﻻﻧﻲﺗﺮ ﺷﺪﻥ ﺯﻣﺎﻥ ﺧﺎﻣﻮﺵ ﺷﺪﻥ ﺗﺮﺍﻧﺰﻳﺴﺘﻮﺭ ﺧﻮﺍﻫﺪ ﺷﺪ‪ .‬ﻳﻚ ﺭﺍﻩ ﻛﺎﻫﺶ ﺯﻣﺎﻥ‬
‫ﺧﺎﻣﻮﺵ ﺷﺪﻥ‪ ،‬ﺑﺰﺭﮔﺘﺮ ﻛﺮﺩﻥ ﻭﻟﺘﺎﮊ ﻣﻨﻔﻲ ﺍﻋﻤﺎﻝ ﺷﺪﻩ ﺑﺮﺍﻱ ﻗﻄﻊ ﺗﺮﺍﻧﺰﻳﺴﺘﻮﺭ ﺍﺳﺖ‪ .‬ﺍﻣﺎ ﺍﻳﻦ‬
‫‪٤‬‬ ‫ﻣﺪﺍﺭ ﻫﺎﻱ ﺍﺷﻤﻴﺖ ﺗﺮﻳﮕﺮ‬

‫ﻛﺎﺭ ﺑﻪﻋﻠﺖ ﺍﻳﺠﺎﺩ ﺑﺎﻳﺎﺱ ﻣﻌﻜﻮﺱ ﺍﻭﻟﻴﻪ ﺑﻴﺲ‪-‬ﺍﻣﻴﺘﺮ‪ ،‬ﺯﻣﺎﻥ ﺭﻭﺷﻦ ﺷﺪﻥ ﺭﺍ ﺍﻓﺰﺍﻳﺶ ﻣﻲﺩﻫﺪ‪.‬‬
‫ﻳﻚ ﺭﺍﻩ ﻣﻄﻠﻮﺏ ﺑﺮﺍﻱ ﺍﺳﺘﻔﺎﺩﻩ ﺍﺯ ﻫﺮ ﺩﻭ ﺧﺎﺻﻴﺖ ﻓﻮﻕ‪ ،‬ﺍﺳﺘﻔﺎﺩﻩ ﺍﺯ ﻳﻚ ﺧﺎﺯﻥ ﻣﻮﺍﺯﻱ ﺑﺎ‬
‫ﻣﻘﺎﻭﻣﺖ ﺑﻴﺲ )ﺧﺎﺯﻥ ‪ C1‬ﺩﺭ ﺷﻜﻞ ﺁﺯﻣﺎﻳﺶ( ﺍﺳﺖ‪ .‬ﺍﻳﻦ ﺧﺎﺯﻥ ﺩﺭ ﻫﻨﮕﺎﻡ ﺭﻭﺷﻦ ﺷﺪﻥ‬
‫ﺗﺮﺍﻧﺰﻳﺴﺘﻮﺭ‪ ،‬ﺍﺗﺼﺎﻝ ﻛﻮﺗﺎﻩ ﺍﺳﺖ ﻭ ﺁﻥ ﺭﺍﺳﺮﻳﻌﺘﺮ ﺭﻭﺷﻦ ﻣﻲﻛﻨﺪ ﻭﺩﺭ ﻫﻨﮕﺎﻡ ﻗﻄﻊ ﺗﺮﺍﻧﺰﻳﺴﺘﻮﺭ‪،‬‬
‫ﺑﺎ ﻇﺎﻫﺮ ﻛﺮﺩﻥ ﻳﻚ ﻭﻟﺘﺎﮊ ﻣﻨﻔﻲ ﺭﻭﻱ ﺑﻴﺲ ﺗﺮﺍﻧﺰﻳﺴﺘﻮﺭ ﺁﻥ ﺭﺍ ﺑﻪﺳﺮﻋﺖ ﺧﺎﻣﻮﺵ ﻣﻲﻛﻨﺪ‪.‬‬
‫ﺧﺎﺯﻥ ﺗﺴﺮﻳﻊ ﺑﺎﻳﺪ ﺁﻥﻗﺪﺭ ﺑﺰﺭﮒ ﺑﺎﺷﺪ ﻛﻪ ﺩﺭ ﺯﻣﺎﻥ ﻣﻮﺭﺩ ﻧﻴﺎﺯ ﺗﺮﺍﻧﺰﻳﺴﺘﻮﺭ ﺑﺮﺍﻱ ﺭﻭﺷﻦ‬
‫ﺷﺪﻥ‪ ،‬ﺟﺮﻳﺎﻥ ﺁﻥ ﺛﺎﺑﺖ ﺑﻤﺎﻧﺪ )ﻳﻌﻨﻲ ﺧﺎﺯﻥ ﺑﻴﺶ ﺍﺯ ‪ %١٠‬ﺷﺎﺭﮊ ﻧﺸﻮﺩ(‪ .‬ﻳﻌﻨﻲ ﺩﺍﺭﻳﻢ ‪:‬‬
‫‪ = 0.1*R*C‬ﺯﻣﺎﻥ ﺭﻭﺷﻦ ﺷﺪﻥ ﺗﺮﺍﻧﺰﻳﺴﺘﻮﺭ‬
‫ﻛﻪ ‪ R‬ﻣﻘﺎﻭﻣﺖ ﺷﺎﺭﮊﻛﻨﻨﺪﻩ ﺧﺎﺯﻥ ﺍﺳﺖ‪.‬‬
‫ﺍﺯ ﻃﺮﻑ ﺩﻳﮕﺮ ﺍﮔﺮ ﺧﺎﺯﻥ ﺗﺴﺮﻳﻊ ﺧﻴﻠﻲ ﺑﺰﺭﮒ ﺑﺎﺷﺪ‪ ،‬ﺩﺭ ﺯﻣﺎﻥ ﺧﺎﻣﻮﺵ ﺑﻮﺩﻥ ﭘﺎﻟﺲ ﻭﺭﻭﺩﻱ‪،‬‬
‫ﺑﻪ ﺍﻧﺪﺍﺯﻩ ﻛﺎﻓﻲ ﺗﺨﻠﻴﻪ ﻧﻤﻲﺷﻮﺩ ﻭ ﻓﺮﻛﺎﻧﺲ ﺳﻴﮕﻨﺎﻝ ﺭﺍ ﻣﺤﺪﻭﺩ ﻣﻲﻛﻨﺪ‪ .‬ﺑﻨﺎﺑﺮﺍﻳﻦ ﺧﺎﺯﻥ‬
‫ﺗﺴﺮﻳﻊ ﺑﺎﻳﺪ ﺁﻥﻗﺪﺭ ﻛﻮﭼﻚ ﺑﺎﺷﺪ ﻛﻪ ﺩﺭ ﺯﻣﺎﻥ ﺧﺎﻣﻮﺵ ﺑﻮﺩﻥ ﭘﺎﻟﺲ ﻭﺭﻭﺩﻱ ﺑﻴﺶ ﺍﺯ ‪%٩٠‬‬
‫ﺁﻥ ﺗﺨﻠﻴﻪ ﺷﻮﺩ‪ .‬ﻳﻌﻨﻲ ﺩﺍﺭﻳﻢ ‪:‬‬
‫‪ = 2.3 * R * C‬ﺯﻣﺎﻥ ﺧﺎﻣﻮﺵ ﺑﻮﺩﻥ ﭘﺎﻟﺲ ﻭﺭﻭﺩﻱ‪.‬‬
‫ﻛﻪ ‪ R‬ﻣﻘﺎﻭﻣﺖ ﺩﺷﺎﺭﮊﻛﻨﻨﺪﻩ ﺧﺎﺯﻥ ﺍﺳﺖ‪.‬‬

‫ﺁﺯﻣﺎﻳﺶ ‪: ١-٢‬‬
‫ﻳﻚ ﻣﻮﺝ ﺳﻴﻨﻮﺳﻲ ﺑﺎ ﻓﺮﻛﺎﻧﺲ ‪ 500kHz‬ﻭ ﺩﺍﻣﻨﻪ )‪ Vpp = 8 (v‬ﺭﺍ ﺑﻪ ﻭﺭﻭﺩﻱ ﻣﺪﺍﺭ‬
‫ﺍﺷﻤﻴﺖﺗﺮﻳﮕﺮ ﺍﻋﻤﺎﻝ ﻛﻨﻴﺪ‪ .‬ﻣﻘﺪﺍﺭ ﺧﺎﺯﻥ ﺗﺴﺮﻳﻊ ‪ C1‬ﺭﺍ ﺑﻪﺩﺳﺖ ﺁﻭﺭﻳﺪ ﻭ ﺧﺮﻭﺟﻲ ﻣﺪﺍﺭ ﺭﺍ ﺩﺭ‬
‫ﺩﻭ ﺣﺎﻟﺖ ﻭﺟﻮﺩ ﻳﺎ ﻋﺪﻡ ﻭﺟﻮﺩ ‪ C1‬ﺑﺮﺭﺳﻲ ﻛﻨﻴﺪ ﻭ ﺷﻜﻞ ﻫﺮ ﺩﻭ ﺧﺮﻭﺟﻲ ﺭﺍ ﺩﺭ ﮔﺰﺍﺭﺵ ﻛﺎﺭ‬
‫ﺧﻮﺩ ﺭﺳﻢ ﻛﻨﻴﺪ‪.‬‬

‫ﭘﺮﺳﺶ ‪ :‬ﺩﻟﻴﻞ ﻭﺟﻮﺩ ﻫﻴﺴﺘﺮﺯﻳﺲ ﺩﺭ ﻣﺪﺍﺭ ﺍﺷﻤﻴﺖﺗﺮﻳﮕﺮ ﺗﺮﺍﻧﺰﻳﺴﺘﻮﺭﻱ ﺭﺍ ﺗﻮﺿﻴﺢ ﺩﻫﻴﺪ‪.‬‬

‫ﭘﺮﺳﺶ ‪ :‬ﺷﻜﻞ ﺯﻳﺮ ﺍﺷﻤﻴﺖﺗﺮﻳﮕﺮ ﺁﭖﺍﻣﭙﻲ ﺭﺍ ﻧﺸﺎﻥ ﻣﻲﺩﻫﺪ ‪:‬‬


‫‪٥‬‬ ‫ﻣﺪﺍﺭ ﻫﺎﻱ ﺍﺷﻤﻴﺖ ﺗﺮﻳﮕﺮ‬

‫ﺍﺳﺎﺱ ﻛﺎﺭ ﻣﺪﺍﺭ ﺭﺍ ﺷﺮﺡ ﺩﻫﻴﺪ ﻭ ﺗﻮﺿﻴﺢ ﺩﻫﻴﺪ ﭼﮕﻮﻧﻪ ﺑﺎ ﺍﺳﺘﻔﺎﺩﻩ ﺍﺯ ﺩﻳﻮﺩ ﻳﺎ ﻣﻘﺴﻢ ﻭﻟﺘﺎﮊ‬
‫ﻣﻲﺗﻮﺍﻥ ‪ UTP‬ﻭ ‪ LTP‬ﻣﺨﺘﻠﻔﻲ ﺩﺍﺷﺖ‪.‬‬

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