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    Rca-40822 - Dual Mosfet - Datasheet

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    Mauricio Nunes
    This document provides specifications for the ASI 40822 N-Channel Dual-Gate Depletion Type Transistor. The transistor is used in RF, IF amplifier and mixer applications up to 150 MHz. It has maximum ratings of 50 mA for drain current and 24 V for drain voltage. The document lists typical characteristics such as threshold voltages for the two gates, drain current, transconductance, capacitances, power gain, and noise figure.

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    Rca-40822 - Dual Mosfet - Datasheet

    Uploaded by

    Mauricio Nunes
    528 views1 page
    This document provides specifications for the ASI 40822 N-Channel Dual-Gate Depletion Type Transistor. The transistor is used in RF, IF amplifier and mixer applications up to 150 MHz. It has maximum ratings of 50 mA for drain current and 24 V for drain voltage. The document lists typical characteristics such as threshold voltages for the two gates, drain current, transconductance, capacitances, power gain, and noise figure.

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    rca-40822 - dual mosfet -datasheet

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    This document provides specifications for the ASI 40822 N-Channel Dual-Gate Depletion Type Transistor. The transistor is used in RF, IF amplifier and mixer applications up to 150 MHz. It has maximum ratings of 50 mA for drain current and 24 V for drain voltage. The document lists typical characteristics such as threshold voltages for the two gates, drain current, transconductance, capacitances, power gain, and noise figure.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    528 views1 page

    Rca-40822 - Dual Mosfet - Datasheet

    Uploaded by

    Mauricio Nunes
    This document provides specifications for the ASI 40822 N-Channel Dual-Gate Depletion Type Transistor. The transistor is used in RF, IF amplifier and mixer applications up to 150 MHz. It has maximum ratings of 50 mA for drain current and 24 V for drain voltage. The document lists typical characteristics such as threshold voltages for the two gates, drain current, transconductance, capacitances, power gain, and noise figure.

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    40822

    MOS FIELD-EFFECT TRANSISTOR

    DESCRIPTION:
    The ASI 40822 is a N-Channel Dual-
    Gate Depletion Type Transistor With PACKAGE STYLE TO-72
    Monolithic Gate Protection Diodes,
    used in RF,IF Amplifier and Mixer
    Applications up to 150 MHz.

    MAXIMUM RATINGS
    ID 50 mA
    VD 24 V
    PDISS 330 mW @ TA = 25 OC
    TJ -65 OC to +175 OC
    1 = Drain 2 = Gate #2
    TSTG -65 OC to +175 OC 3 = Gate #1 4 = Source, Case, and Substrate

    CHARACTERISTICS O
    TA = 25 C NONE
    SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
    VG1S(OFF) VDS = 15 V VG2S = 4.0 V ID = 50 µA -2.0 -4.0 V
    VG2S(OFF) VDS = 15 V VG1S = 0 V ID = 50 µA -2.0 -4.0 V
    IG1SSF VG1S = 6.0 V VG2S = VDS = 0 V 50 µA
    IG1SSR VG1S = -6.0 V VG2S = VDS = 0 V 50 µA
    IG2SSF VG2S = 6.0 V VG1S = VDS = 0 V 50 µA
    IG2SSR VG2S = -6.0 V VG1S = VDS = 0 V 50 µA
    IDS VDS = 15 V VG1S = 0 V VG2S = 4.0 V 5.0 15 30 mA
    V(BR)G1 IG1 = ±100 µA 9.0 V
    V(BR)G2 IG2 = ±100 µA 9.0 V

    gfs VDS = 15 V VG2S = 4.0 V ID = 10 mA 12000 µmho


    f = 1.0 KHz
    Crss VDS = 15 V VG2S = 4.0 V ID = 10 mA 0.005 0.03
    Ciss 6.5 9.5 pF
    f = 1.0 MHz
    Coss 2.0
    GPS VDS = 15 V VG2S = 4.0 V ID = 10 mA f 19 24 dB
    NF = 200 MHz 2.0 3.5

    A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
    7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1

    Specifications are subject to change without

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