AO8807

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AO8807 uses advanced trench technology to VDS (V) = -12V

provide excellent RDS(ON), low gate charge and ID = -6.5 A (VGS = -4.5V)
operation with gate voltages as low as 1.8V. This RDS(ON) < 20mΩ (VGS = -4.5V)
device is suitable for use as a load switch. AO8807 RDS(ON) < 24mΩ (VGS = -2.5V)
and AO8807L are electrically identical.
RDS(ON) < 30mΩ (VGS = -1.8V)
- RoHS Compliant
ESD Protected!
-Halogen Free

D1 D2
TSSOP-8
Top View

D1 1 8 D2 Rg Rg
S1 2 7 S2
S1 3 6 S2 G1 G2
G1 4 5 G2

S1 S2

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -12 V
Gate-Source Voltage VGS ±8 V
Continuous Drain TA=25°C -6.5
Current TA=70°C ID -5 A
C
Pulsed Drain Current IDM -60
TA=25°C 1.4
PD W
Power Dissipation B TA=70°C 0.9
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 73 90 °C/W
RθJA
Maximum Junction-to-Ambient AD Steady-State 96 125 °C/W
Maximum Junction-to-Lead Steady-State RθJL 63 75 °C/W

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO8807

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -12 V
VDS=-12V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±8V ±10 µA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.35 -0.53 -0.85
ID(ON) On state drain current VGS=-4.5V, VDS=-5V -60 A
VGS=-4.5V, ID=-6.5A 16 20
mΩ
TJ=125°C 23 28
RDS(ON) Static Drain-Source On-Resistance VGS=-2.5V, ID=-6A 19 24 mΩ
VGS=-1.8V, ID=-5.5A 23 30 mΩ
VGS=-1.5V, ID=-5A 28 36 mΩ
gFS Forward Transconductance VDS=-5V, ID=-6.5A 45 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.56 -1 V
IS Maximum Body-Diode Continuous Current -1.4 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1740 2100 pF
Coss Output Capacitance VGS=0V, VDS=-6V, f=1MHz 334 pF
Crss Reverse Transfer Capacitance 200 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.3 1.7 kΩ
SWITCHING PARAMETERS
Qg Total Gate Charge 19 23 nC
Qgs Gate Source Charge VGS=-4.5V, VDS=-6V, ID=-6.5A 4.5 nC
Qgd Gate Drain Charge 5.3 nC
tD(on) Turn-On Delay Time 240 ns
tr Turn-On Rise Time VGS=-4.5V, VDS=-6V, RL=0.9Ω, 580 ns
tD(off) Turn-Off Delay Time RGEN=3Ω 7 µs
tf Turn-Off Fall Time 4.2 µs
trr Body Diode Reverse Recovery Time IF=-6.5A, dI/dt=100A/µs 22 27 ns
Qrr Body Diode Reverse Recovery Charge IF=-6.5A, dI/dt=100A/µs 17 nC

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on T J(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev1 :April 2010

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO8807

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 60

-4.5V -2.5V VDS=-5V

50 50
-3V

40 40
-2V
-ID (A)

-ID(A)
30 30

20 20
125°C
10 VGS=-1.5V 10
25°C
0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3
-VDS (Volts) -VGS(Volts)
Figure 1: On-Region Characteristics(Note E) Figure 2: Transfer Characteristics(Note E)

45 1.6

40 ID=-6A, VGS=-2.5V
Normalized On-Resistance

VGS=-1.5V 1.4
35 ID=-6.5A, VGS=-4.5V
RDS(ON) (mΩ)

VGS=-2.5V
30 VGS=-1.8V
1.2
25 ID=-5A, VGS=-1.5V

20 ID=-5.5A, VGS=-1.8V
1.0
15
VGS=-4.5V
10 0.8
0 2 4 6 8 10 12 14 16 18 20 0 25 50 75 100 125 150 175
-ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage(Note E) Temperature(Note E)

50 1E+01

45 ID=-6.5A
1E+00
125°C
40
1E-01
35
RDS(ON) (mΩ)

25°C
-IS (A)

30 1E-02
125°C
25
1E-03
20
1E-04
15
25°C
10 1E-05
0 2 4 6 8 0.0 0.2 0.4 0.6 0.8 1.0
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Figure 6: Body-Diode Characteristics(Note E)
Voltage(Note E)

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO8807

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

4.5 2800

4 VDS=-6V
2400
ID=-6.5A Ciss
3.5
2000

Capacitance (pF)
3
-VGS (Volts)

2.5 1600

2 1200
1.5
800
1 Coss

0.5 400
Crss
0 0
0 4 8 12 16 20 0 2 4 6 8 10 12
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 80

10µs TJ(Max)=150°C
10 RDS(ON) 60 TA=25°C
limited 100µs
Power (W)
ID (Amps)

1ms 40
1
10s 0.1s
1s 20
0
DC
TJ(Max)=150°C
TA=25°C
0
0
0.0001 0.001 0.01 0.1 1 10 100
0.01 0.1 1 10 100
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Ambient (Note F)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

RθJA=125°C/W
Thermal Resistance

PD
0.1
Ton
T
Single Pulse

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note F)

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO8807

Gate Charge Test Circuit & Waveform

Vgs
Qg
- -10V
VDC
-
+ Vds Qgs Qgd
VDC
+
DUT
Vgs

Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds
Vds

- 90%

Vgs DUT VDC

Vdd
Rg
+
10%

Vgs Vgs td(on) tr t d(off) tf

ton t off

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds

Alpha & Omega Semiconductor, Ltd. www.aosmd.com