PD - 97470

AUTOMOTIVE GRADE AUIRF3710Z

AUIRF3710ZS
Features HEXFET® Power MOSFET
O Low On-Resistance
O 175°C Operating Temperature
D
O Fast Switching VDSS = 100V
O Fully Avalanche Rated
O Repetitive Avalanche Allowed up to Tjmax RDS(on) = 18mΩ
O Lead-Free, RoHS Compliant G
O Automotive Qualified * ID = 59A
Description
S
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient TO-220AB D2Pak
and reliable device for use in Automotive applica- AUIRF3710Z AUIRF3710ZS
tions and a wide variety of other applications.

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure
to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation
ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 59 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 42
IDM Pulsed Drain Current c 240
PD @TC = 25°C Maximum Power Dissipation 160 W
Linear Derating Factor 1.1 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy (Thermally limited) d 170 mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value h 200
IAR Avalanche Current c See Fig.12a,12b,15,16 A
EAR Repetitive Avalanche Energy mJ
TJ Operating Junction and -55 to + 175 °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw k 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case j ––– 0.92 °C/W
RθCS Case-to-Sink, Flat, Greased Surface 0.50 –––
RθJA Junction-to-Ambient (PCB Mount, steady state) ––– 40

HEXFET® is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/
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AUIRF3710Z/S
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250μA
ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.10 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 14 18 mΩ VGS = 10V, ID = 35A f
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250μA
gfs Forward Transconductance 35 ––– ––– S VDS = 50V, ID = 35A
IDSS Drain-to-Source Leakage Current ––– ––– 20 μA VDS = 100V, VGS = 0V
––– ––– 250 VDS = 100V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -20V

Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)

Qg Total Gate Charge ––– 82 120 nC ID = 35A
Qgs Gate-to-Source Charge ––– 19 28 VDS = 80V
Qgd Gate-to-Drain ("Miller") Charge ––– 27 40 VGS = 10V f
td(on) Turn-On Delay Time ––– 17 ––– ns VDD = 50V
tr Rise Time ––– 77 ––– ID = 35A
td(off) Turn-Off Delay Time ––– 41 ––– RG = 6.8Ω
tf Fall Time ––– 56 ––– VGS = 10V f
LD Internal Drain Inductance ––– 4.5 ––– nH Between lead, D

6mm (0.25in.)
G
LS Internal Source Inductance ––– 7.5 ––– from package
S
and center of die contact
Ciss Input Capacitance ––– 2900 ––– pF VGS = 0V
Coss Output Capacitance ––– 290 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 150 ––– ƒ = 1.0MHz, See Fig. 5
Coss Output Capacitance ––– 1130 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 170 ––– VGS = 0V, VDS = 80V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 280 ––– VGS = 0V, VDS = 0V to 80V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 59 MOSFET symbol D

(Body Diode) A showing the

ISM Pulsed Source Current ––– ––– 240 integral reverse G

(Body Diode) c p-n junction diode.

f
S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 35A, VGS = 0V
trr Reverse Recovery Time ––– 50 75 ns TJ = 25°C, IF = 35A, VDD = 25V
Qrr Reverse Recovery Charge ––– 100 160 nC di/dt = 100A/μs f
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by … Coss eff. is a fixed capacitance that gives the same charging time
max. junction temperature. (See fig. 11). as Coss while VDS is rising from 0 to 80% VDSS .
‚ Limited by TJmax, starting TJ = 25°C, L = 0.27mH, † This value determined from sample failure population,
RG = 25Ω, IAS = 35A, VGS =10V. Part not starting TJ = 25°C, L = 0.27mH,RG = 25Ω, IAS = 35A, VGS =10V
recommended for use above this value. ‡ This is applied to D2Pak, when mounted on 1" square PCB
ƒ ISD ≤ 35A, di/dt ≤ 380A/μs, VDD ≤ V(BR)DSS, ( FR-4 or G-10 Material ). For recommended footprint and
TJ ≤ 175°C. soldering techniques refer to application note #AN-994.
„ Pulse width ≤ 1.0ms; duty cycle ≤ 2%. ˆ Rθ is measured at TJ approximately 90°C.
‰ This is only applied to TO-220AB pakcage.

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†
Qualification Information
Automotive
††
(per AEC-Q101)

Qualification Level Comments: This part number(s) passed Automotive

qualification. IR’s Industrial and Consumer qualification level is
granted by extension of the higher Automotive level.

Moisture Sensitivity Level TO-220AB N/A

2
D PAK MSL1
Machine Model Class M4
AEC-Q101-002
Human Body Model Class H1C
ESD
AEC-Q101-001
Charged Device Model Class C3
AEC-Q101-005
RoHS Compliant Yes

† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/

†† Exceptions to AEC-Q101 requirements are noted in the qualification report.

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 AUIRF3710Z/S

1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V

ID, Drain-to-Source Current (A)

8.0V
ID, Drain-to-Source Current (A)

100 8.0V
7.0V 7.0V
6.0V 6.0V
5.5V 100 5.5V
5.0V 5.0V
10
BOTTOM 4.5V BOTTOM 4.5V

1
4.5V 10 4.5V

0.1
20μs PULSE WIDTH 20μs PULSE WIDTH
Tj = 25°C Tj = 175°C
0.01 1
0.1 1 10 100 0.1 1 10 100

V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 120
GFS, Forward Transconductance (S)

100
ID, Drain-to-Source Current (Α)

TJ = 25°C
100 T J = 175°C

80
T J = 175°C
10 60

40
T J = 25°C
1

20
VDS = 25V VDS = 15V
20μs PULSE WIDTH 20μs PULSE WIDTH
0
0
2 4 6 8 10
0 10 20 30 40 50 60 70
VGS, Gate-to-Source Voltage (V) ID, Drain-to-Source Current (A)

Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance

vs. Drain Current

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 AUIRF3710Z/S

100000 12.0
VGS = 0V, f = 1 MHZ
C =C + C , C SHORTED
ID= 35A
iss gs gd ds V DS= 80V
C rss = Cgd 10.0

V GS, Gate-to-Source Voltage (V)

C oss = Cds + C gd
V DS= 50V
10000
V DS= 20V
C, Capacitance(pF)

8.0
Ciss

1000 6.0
Coss

Crss 4.0
100

2.0

10
0.0
1 10 100
0 20 40 60 80 100
V DS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)

Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000.00 1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)

100.00 100
TJ = 175°C

100μsec
10.00 10

TJ = 25°C
1 1msec
1.00
Tc = 25°C
Tj = 175°C 10msec
V GS = 0V Single Pulse
0.10 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 1000

V SD, Source-to-Drain Voltage (V) V DS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage

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60 3.0
ID = 59A

RDS(on) , Drain-to-Source On Resistance

50 2.5 V GS = 10V
ID, Drain Current (A)

40 2.0

(Normalized)
30 1.5

20 1.0

10 0.5

0 0.0
25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

TC , Case Temperature (°C) TJ , Junction Temperature (°C)

Fig 9. Maximum Drain Current vs. Fig 10. Normalized On-Resistance

Case Temperature vs. Temperature

10
Thermal Response ( Z thJC )

1
D = 0.50

0.20
0.1 0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )

0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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15V 300
ID

EAS , Single Pulse Avalanche Energy (mJ)

250 TOP 15A
L DRIVER 25A
VDS
BOTTOM 35A
200
RG D.U.T +
V
- DD
IAS A
VGS
20V 150
tp 0.01Ω

100
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS 50

tp
0
25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

I AS

Fig 12c. Maximum Avalanche Energy

Fig 12b. Unclamped Inductive Waveforms
vs. Drain Current
QG
10 V
QGS QGD
5.0

VG
V GS(th) Gate threshold Voltage (V)

4.0

Charge

Fig 13a. Basic Gate Charge Waveform 3.0 ID = 250μA

Current Regulator
Same Type as D.U.T.

2.0
50KΩ

12V .2μF
.3μF

+
V
D.U.T. - DS 1.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
VGS
TJ , Temperature ( °C )
3mA

IG ID
Current Sampling Resistors

Fig 14. Threshold Voltage vs. Temperature

Fig 13b. Gate Charge Test Circuit

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 AUIRF3710Z/S

1000
Duty Cycle = Single Pulse

100
Allowed avalanche Current vs
Avalanche Current (A)

avalanche pulsewidth, tav

0.01
assuming Δ Tj = 25°C due to
avalanche losses
10
0.05
0.10

0.1
1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current vs.Pulsewidth

200 Notes on Repetitive Avalanche Curves , Figures 15, 16:

TOP Single Pulse (For further info, see AN-1005 at www.irf.com)
BOTTOM 10% Duty Cycle 1. Avalanche failures assumption:
ID = 35A Purely a thermal phenomenon and failure occurs at a
EAR , Avalanche Energy (mJ)

150 temperature far in excess of Tjmax. This is validated for

every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
100 3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
50
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
0 tav = Average time in avalanche.
25 50 75 100 125 150 175 D = Duty cycle in avalanche = tav ·f
Starting TJ , Junction Temperature (°C) ZthJC(D, tav) = Transient thermal resistance, see figure 11)

PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC

Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs. Temperature

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Driver Gate Drive

P.W.
D.U.T P.W.
Period D=
Period
+

VGS=10V *
ƒ Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance
D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚ Recovery Body Diode Forward
-
„ + Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG • dv/dt controlled by RG VDD Re-Applied

• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
• I SD controlled by Duty Factor "D" - Inductor Curent
• D.U.T. - Device Under Test

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs

RD
VDS

V GS
D.U.T.
RG
+
- VDD

10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

VDS
90%

10%
VGS
td(on) tr t d(off) tf

Fig 18b. Switching Time Waveforms

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TO-220AB Package Outline
Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

Part Number AUIRF3710Z

Date Code
Y= Year
IR Logo
YWWA WW= Work Week
A= Automotive, Leadfree

XX or XX

Lot Code

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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 AUIRF3710Z/S

D2Pak Package Outline (Dimensions are shown in millimeters (inches))

D2Pak Part Marking Information

Part Number AUIRF3710ZS

Date Code
Y= Year
IR Logo
YWWA WW= Work Week
A= Automotive, Leadfree

XX or XX

Lot Code

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF3710Z/S
D2Pak Tape & Reel Infomation
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161) 1.50 (.059)
3.90 (.153) 0.368 (.0145)
0.342 (.0135)

FEED DIRECTION 1.85 (.073) 11.60 (.457)

1.65 (.065) 11.40 (.449) 24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)

FEED DIRECTION

13.50 (.532) 27.40 (1.079)

12.80 (.504) 23.90 (.941)

330.00 60.00 (2.362)

(14.173) MIN.
MAX.

30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

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Ordering Information
Base part number Package Type Standard Pack Complete Part Number
Form Quantity
AUIRF3710Z TO-220 Tube 50 AUIRF3710ZS
AUIRF3710ZS D2Pak Tube 50 AUIRF3710ZS
AUIRF3710ZS Tape and Reel Left 800 AUIRF3710ZSTRL
AUIRF3710ZS Tape and Reel Right 800 AUIRF3710ZSTRR

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AUIRF3710Z/S

IMPORTANT NOTICE

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries
(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to
its products and services at any time and to discontinue any product or services without notice. Part numbers
designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and
conditions of sale supplied at the time of order acknowledgment.

IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR
deems necessary to support this warranty. Except where mandated by government requirements, testing of all
parameters of each product is not necessarily performed.

IR assumes no liability for applications assistance or customer product design. Customers are responsible for
their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.

Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without
alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction
of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable
for such altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that
product or service voids all express and any implied warranties for the associated IR product or service and is
an unfair and deceptive business practice. IR is not responsible or liable for any such statements.

IR products are not designed, intended, or authorized for use as components in systems intended for surgical
implant into the body, or in other applications intended to support or sustain life, or in any other application in which
the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer
purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold
International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any
claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges
that IR was negligent regarding the design or manufacture of the product.

IR products are neither designed nor intended for use in military/aerospace applications or environments unless
the IR products are specifically designated by IR as military-grade or “enhanced plastic.” Only products
designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such
use of IR products which IR has not designated as military-grade is solely at the Buyer’s risk, and that they are
solely responsible for compliance with all legal and regulatory requirements in connection with such use.

IR products are neither designed nor intended for use in automotive applications or environments unless the
specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number
including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products
in automotive applications, IR will not be responsible for any failure to meet such requirements.

For technical support, please contact IR’s Technical Assistance Center

http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105

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