PD - 95849

AUTOMOTIVE MOSFET IRLZ44Z

IRLZ44ZS
IRLZ44ZL
Features HEXFET® Power MOSFET
● Logic Level
● Advanced Process Technology D
● Ultra Low On-Resistance VDSS = 55V
● 175°C Operating Temperature
● Fast Switching RDS(on) = 13.5mΩ
● Repetitive Avalanche Allowed up to Tjmax G

Description ID = 51A
Specifically designed for Automotive applications, S
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety TO-220AB D2Pak TO-262
of other applications. IRLZ44Z IRLZ44ZS IRLZ44ZL
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 51
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 36 A
IDM Pulsed Drain Current c 204
PD @TC = 25°C Power Dissipation 80 W
Linear Derating Factor 0.53 W/°C
VGS Gate-to-Source Voltage ± 16 V
EAS (Thermally limited) Single Pulse Avalanche Energy d 78 mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value h 110
IAR Avalanche Current c See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy g mJ
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw i y
10 lbf in (1.1N m)y
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case k ––– 1.87 °C/W
RθCS Case-to-Sink, Flat Greased Surface ik 0.50 –––
RθJA Junction-to-Ambient ik ––– 62
RθJA Junction-to-Ambient (PCB Mount) jk ––– 40

www.irf.com 1
3/2/04
IRLZ44Z/S/L

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.05 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 11 13.5 mΩ VGS = 10V, ID = 31A e
––– ––– 20 mΩ VGS = 5.0V, ID = 30A e
––– ––– 22.5 mΩ VGS = 4.5V, ID = 15A e
VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 27 ––– ––– V VDS = 25V, ID = 31A
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 55V, VGS = 0V
––– ––– 250 VDS = 55V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -16V
Qg Total Gate Charge ––– 24 36 ID = 31A
Qgs Gate-to-Source Charge ––– 7.5 ––– nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– 12 ––– VGS = 5.0V e
td(on) Turn-On Delay Time ––– 14 ––– VDD = 50V
tr Rise Time ––– 160 ––– ID = 31A
td(off) Turn-Off Delay Time ––– 25 ––– ns RG = 7.5 Ω
tf Fall Time ––– 42 ––– VGS = 5.0V e
LD Internal Drain Inductance ––– 4.5 ––– Between lead, D

nH 6mm (0.25in.)
LS Internal Source Inductance ––– 7.5 ––– from package G

and center of die contact S

Ciss Input Capacitance ––– 1620 ––– VGS = 0V

Coss Output Capacitance ––– 230 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 130 ––– pF ƒ = 1.0MHz
Coss Output Capacitance ––– 860 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 180 ––– VGS = 0V, VDS = 44V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 280 ––– VGS = 0V, VDS = 0V to 44V f
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 51 MOSFET symbol
(Body Diode) A showing the
ISM Pulsed Source Current ––– ––– 204 integral reverse
(Body Diode)c p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 31A, VGS = 0V e
trr Reverse Recovery Time ––– 21 32 ns TJ = 25°C, IF = 31A, VDD = 28V
Qrr Reverse Recovery Charge ––– 16 24 nC di/dt = 100A/µs e
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

2 www.irf.com
 IRLZ44Z/S/L

1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

8.0V 8.0V
5.0V 5.0V
100 4.5V 4.5V
4.0V 4.0V
3.5V
100 3.5V
BOTTOM 3.0V BOTTOM 3.0V

10

10
3.0V
1 3.0V

≤ 60µs PULSE WIDTH ≤ 60µs PULSE WIDTH

Tj = 25°C Tj = 175°C
0.1 1
0.1 1 10 100 0.1 1 10 100

VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000.0 60

T J = 175°C
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current (Α)

T J = 25°C

100.0
T J = 175°C 40

T J = 25°C

10.0
20

VDS = 20V
VDS = 10V
≤ 60µs PULSE WIDTH
1.0 380µs PULSE WIDTH
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0
0 10 20 30 40 50
VGS, Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)

Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance

Vs. Drain Current
www.irf.com 3
IRLZ44Z/S/L

2500 12
VGS = 0V, f = 1 MHZ ID= 31A
C iss = C gs + C gd, C ds SHORTED
VDS= 44V

VGS, Gate-to-Source Voltage (V)

C rss = C gd 10
2000 VDS= 28V
C oss = C ds + C gd
VDS= 11V
C, Capacitance (pF)

Ciss 8
1500

1000
4

500 2
Coss
Crss
0
0
0 10 20 30 40 50
1 10 100
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000.0 1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)

100.0 100
T J = 175°C

100µsec
10.0 10

T J = 25°C
1msec
1.0 1
Tc = 25°C 10msec
Tj = 175°C
VGS = 0V Single Pulse
0.1 0.1
0.2 0.6 1.0 1.4 1.8 1 10 100 1000

VSD, Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
4 www.irf.com
 IRLZ44Z/S/L

60 2.5

RDS(on) , Drain-to-Source On Resistance

ID = 30A
VGS = 5.0V
50
2.0
ID , Drain Current (A)

40

(Normalized)
30 1.5

20
1.0
10

0 0.5
25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

T J , Junction Temperature (°C) T J , Junction Temperature (°C)

Fig 9. Maximum Drain Current Vs. Fig 10. Normalized On-Resistance

Case Temperature Vs. Temperature

10
Thermal Response ( Z thJC )

1 D = 0.50

0.20
0.10 R1
R1
R2
R2
R3
R3 Ri (°C/W) τi (sec)
0.1 0.05 τJ τC
τJ τ
0.736 0.000345
τ1 τ2 τ3
0.02 τ1 τ2 τ3 0.687 0.00147
0.01
Ci= τi/Ri 0.449 0.007058
Ci τi/Ri
0.01

SINGLE PULSE Notes:

( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5
IRLZ44Z/S/L

320
15V

EAS, Single Pulse Avalanche Energy (mJ)

ID
TOP 3.7A
5.7A
L DRIVER BOTTOM 31A
VDS 240

RG D.U.T +
V
- DD
IAS A 160
VGS
20V
tp 0.01Ω

Fig 12a. Unclamped Inductive Test Circuit 80

V(BR)DSS
tp

0
25 50 75 100 125 150 175

Starting T J, Junction Temperature (°C)

I AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
QG

10 V
QGS QGD 3.0
VGS(th) Gate threshold Voltage (V)

VG
2.5

ID = 250µA
Charge 2.0

Fig 13a. Basic Gate Charge Waveform

1.5

1.0
L
VCC
DUT
0 0.5
1K -75 -50 -25 0 25 50 75 100 125 150 175

T J , Temperature ( °C )

Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage Vs. Temperature
6 www.irf.com
 IRLZ44Z/S/L

1000

Duty Cycle = Single Pulse

100
Allowed avalanche Current vs
Avalanche Current (A)

avalanche pulsewidth, tav

assuming ∆ Tj = 25°C due to
0.01 avalanche losses. Note: In no
10 case should Tj be allowed to
0.05 exceed Tjmax
0.10

0.1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

100 Notes on Repetitive Avalanche Curves , Figures 15, 16:

TOP Single Pulse (For further info, see AN-1005 at www.irf.com)
BOTTOM 1% Duty Cycle 1. Avalanche failures assumption:
ID = 31A Purely a thermal phenomenon and failure occurs at a
EAR , Avalanche Energy (mJ)

80
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
60 not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
40 4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
20
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
0 tav = Average time in avalanche.
25 50 75 100 125 150 175 D = Duty cycle in avalanche = tav ·f
Starting T J , Junction Temperature (°C) ZthJC(D, tav) = Transient thermal resistance, see figure 11)

PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC

Fig 16. Maximum Avalanche Energy Iav = 2DT/ [1.3·BV·Zth]
Vs. Temperature EAS (AR) = PD (ave)·tav
www.irf.com 7
IRLZ44Z/S/L

Driver Gate Drive

D.U.T Period D=
P.W.
Period
+ P.W.

ƒ
*
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚
-
„ +
Recovery
Current
Body Diode Forward
Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG • di/dt controlled by RG VDD Re-Applied

• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
• ISD controlled by Duty Factor "D" - Inductor Current
Inductor Curent
• D.U.T. - Device Under Test

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 17. Diode Reverse Recovery Test Circuit for N-Channel

HEXFET® Power MOSFETs

RD
VDS

VGS
D.U.T.
RG
+
-VDD

10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

VDS
90%

10%
VGS
td(on) tr t d(off) tf

Fig 18b. Switching Time Waveforms

8 www.irf.com
 IRLZ44Z/S/L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415) 3.78 (.149) -B-
2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)
2.62 (.103) 4.20 (.165)
-A- 1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045) LEAD ASSIGNMENTS
MIN 1 - GATE
1 2 3 2 - DRAIN
3 - SOURCE
4 - DRAIN
14.09 (.555)
13.47 (.530) 4.06 (.160)
3.55 (.140)

0.93 (.037) 0.55 (.022)

3X 3X
0.69 (.027) 0.46 (.018)
1.40 (.055)
3X
1.15 (.045) 0.36 (.014) M B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

TO-220AB Part Marking Information

EXAMPLE: THIS IS AN IRF1010
LOT CODE 1789
AS S EMBLED ON WW 19, 1997 INTERNATIONAL PART NUMBER
IN T HE AS S EMBLY LINE "C" RECTIFIER
LOGO
DAT E CODE
YEAR 7 = 1997
AS S EMBLY
LOT CODE WEEK 19
LINE C

For GB Production
EXAMPLE: THIS IS AN IRF1010
LOT CODE 1789
AS S EMBLED ON WW 19, 1997 INTERNATIONAL PART NUMBER
IN T HE AS S EMBLY LINE "C" RECT IFIER
LOGO

DAT E CODE
LOT CODE

www.irf.com 9
IRLZ44Z/S/L
D2Pak Package Outline
Dimensions are shown in millimeters (inches)

D2Pak Part Marking Information

T HIS IS AN IRF530S WIT H PART NUMBER
LOT CODE 8024 INT ERNAT IONAL
AS S EMBLED ON WW 02, 2000 RECT IFIER F530S
IN T HE AS S EMBLY LINE "L" LOGO
DAT E CODE
YEAR 0 = 2000
AS S EMBLY
LOT CODE WEEK 02
LINE L
For GB Production
T HIS IS AN IRF530S WIT H PART NUMBER
LOT CODE 8024 INT ERNAT IONAL
AS S EMBLED ON WW 02, 2000 RECT IFIER F530S
IN T HE AS S EMBLY LINE "L" LOGO

DAT E CODE
LOT CODE

10 www.irf.com
 IRLZ44Z/S/L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)

IGBT
1- GATE
2- COLLEC-
TOR

TO-262 Part Marking Information

EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789 PART NUMBER
INT ERNAT IONAL
AS SEMBLED ON WW 19, 1997
RECTIFIER
IN T HE AS S EMBLY LINE "C" LOGO
DAT E CODE
YEAR 7 = 1997
AS SEMBLY
LOT CODE WEEK 19
LINE C

www.irf.com 11
IRLZ44Z/S/L
D2Pak Tape & Reel Information
TRR

1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161) 1.50 (.059)
3.90 (.153) 0.368 (.0145)
0.342 (.0135)

FEED DIRECTION 1.85 (.073) 11.60 (.457)

1.65 (.065) 11.40 (.449) 24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)

FEED DIRECTION

13.50 (.532) 27.40 (1.079)

12.80 (.504) 23.90 (.941)

330.00 60.00 (2.362)

(14.173) MIN.
MAX.

30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

Notes:
 Repetitive rating; pulse width limited by … Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
max. junction temperature. (See fig. 11). avalanche performance.
‚ Limited by TJmax, starting TJ = 25°C, L = 0.166mH † This value determined from sample failure population. 100%
RG = 25Ω, IAS = 31A, VGS =10V. Part not tested to this value in production.
recommended for use above this value. ‡ This is only applied to TO-220AB pakcage.
ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%. ˆ This is applied to D2Pak, when mounted on 1" square PCB (FR-
„ Coss eff. is a fixed capacitance that gives the 4 or G-10 Material). For recommended footprint and soldering
same charging time as Coss while VDS is rising
techniques refer to application note #AN-994.
from 0 to 80% VDSS .
‰ Rθ is measured at TJ approximately 90°C
TO-220AB package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101]market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/04
12 www.irf.com
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/