AO3435

P-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AO3435/L uses advanced trench technology to VDS = -20V

provide excellent RDS(ON), low gate charge and ID = -3.5A (VGS = -4.5V)
operation with gate voltages as low as 1.5V. This RDS(ON) < 70mΩ (VGS =- 4.5V)
device is suitable for use in buck convertor RDS(ON) < 90mΩ (VGS = -2.5V)
applications.
RDS(ON) < 110mΩ (VGS = -1.8V)
AO3435 and AO3435L are electrically identical.
-RoHS Compliant RDS(ON) < 130mΩ (VGS = -1.5V)
-AO3435L is Halogen Free

TO-236 D
(SOT-23)
Top View

G
D
S G
S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol 10 Sec Steady State Units
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS ±8 V
Continuous Drain TA=25°C -3.5 -2.9
Current A TA=70°C ID -2.7 -2.3 A
B
Pulsed Drain Current IDM -25
TA=25°C 1.4 1
PD W
Power Dissipation A TA=70°C 0.9 0.6
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
A
Maximum Junction-to-Ambient t ≤ 10s 70 90 °C/W
A RθJA
Maximum Junction-to-Ambient Steady-State 100 125 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 63 80 °C/W

Alpha & Omega Semiconductor, Ltd.

AO3435

Electrical Characteristics (T J=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -20 V
VDS=-20V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±8V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.5 -0.65 -1 V
ID(ON) On state drain current VGS=-4.5V, VDS=-5V -25 A
VGS=-4.5V, ID=-3.5A 56 70
mΩ
TJ=125°C 80 100
RDS(ON) Static Drain-Source On-Resistance VGS=-2.5V, ID=-3.0A 70 90 mΩ
VGS=-1.8V, ID=-2.0A 85 110 mΩ
VGS=-1.5V, ID=-0.5A 100 130 mΩ
gFS Forward Transconductance VDS=-5V, ID=-3.5A 15 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.7 -1 V
IS Maximum Body-Diode Continuous Current -1.4 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 560 745 pF
Coss Output Capacitance VGS=0V, VDS=-10V, f=1MHz 80 pF
Crss Reverse Transfer Capacitance 70 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 15 23 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 8.5 11 nC
Qgs Gate Source Charge VGS=-4.5V, VDS=-10V, ID=-3.5A 1.2 nC
Qgd Gate Drain Charge 2.1 nC
tD(on) Turn-On DelayTime 7.2 ns
tr Turn-On Rise Time VGS=-4.5V, VDS=-10V, RL=3Ω, 36 ns
tD(off) Turn-Off DelayTime RGEN=6Ω 53 ns
tf Turn-Off Fall Time 56 ns
trr Body Diode Reverse Recovery Time IF=-3.5A, dI/dt=100A/µs 37 49 ns
Qrr Body Diode Reverse Recovery Charge IF=-3.5A, dI/dt=100A/µs 27 nC
A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 300µs pulse width, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air
12environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev0 : April 2008

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AO3435

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

25 20
-3.0V VDS=-5V
-4.5V
20 -2.5V
15

15

-ID(A)
-ID (A)

-2.0V 10
10

VGS=-1.5V 5
5
125°C
25°C
0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3
-VDS (Volts) -VGS(Volts)
Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics

150 1.6

VGS=-1.5V VGS=-
Normalized On-Resistance

130
1.4 2.5V
RDS(ON) (mΩ)

110 VGS=-1.8V
VGS=-4.5V
1.2 ID=-3.5A
90 VGS=-1.5V
VGS=-2.5V ID=-0.5A
1
70
VGS=-4.5V

50 0.8
0 2 4 6 8 10 0 25 50 75 100 125 150 175
-ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

180 1E+02
ID=-3.5A
160 1E+01
12
140 1E+00
RDS(ON) (mΩ)

120 1E-01 125°C

-IS (A)

100 125°C 1E-02 25°C

80 1E-03

60 25°C 1E-04

40 1E-05
0 2 4 6 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

AO3435

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 1400
VDS=-10V
ID=-3.5A 1200
4
1000

Capacitance (pF)
-VGS (Volts)

3
800
Ciss
2 600

400
1 Coss
200
Crss
0 0
0 2 4 6 8 10 0 5 10 15 20
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.00 1000
TJ(Max)=150°C
TA=25°C
RDS(ON) 10µs
10.00 100
limited 100µ
Power (W)
-ID (Amps)

1ms
1.00 10
10ms
0.1s
0.10 1s
1
TJ(Max)=150°C DC
TA=25°C
0.01 0.1
0.1 1 10 100 0.00001 0.001 0.1 10 1000
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E)
Ambient (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

12
RθJA=90°C/W
Thermal Resistance

0.1
PD

0.01
Ton
T
Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)

Alpha & Omega Semiconductor, Ltd.