June 2003

AO3413
P-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AO3413 uses advanced trench technology to VDS (V) = -20V

provide excellent RDS(ON), low gate charge and ID = -3 A
operation with gate voltages as low as 1.8V. This RDS(ON) < 97mΩ (VGS = -4.5V)
device is suitable for use as a load switch or in PWM RDS(ON) < 130mΩ (VGS = -2.5V)
applications.
RDS(ON) < 190mΩ (VGS = -1.8V)

D
TO-236
(SOT-23)
Top View

G
D G
S S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS ±8 V
Continuous Drain TA=25°C -3
Current A TA=70°C ID -2.4 A
B
Pulsed Drain Current IDM -15
TA=25°C 1.4
PD W
Power Dissipation A TA=70°C 0.9
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 70 90 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 100 125 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 63 80 °C/W

Alpha & Omega Semiconductor, Ltd.

AO3413

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -20 V
VDS=-16V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±8V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.3 -0.55 -1 V
ID(ON) On state drain current VGS=-4.5V, VDS=-5V -15 A
VGS=-4.5V, ID=-3A 81 97
mΩ
TJ=125°C 111 135
RDS(ON) Static Drain-Source On-Resistance
VGS=-2.5V, ID=-2.6A 108 130 mΩ
VGS=-1.8V, ID=-1A 146 190 mΩ
gFS Forward Transconductance VDS=-5V, ID=-3A 4 7 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.78 -1 V
IS Maximum Body-Diode Continuous Current -2 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 540 pF
Coss Output Capacitance VGS=0V, VDS=-10V, f=1MHz 72 pF
Crss Reverse Transfer Capacitance 49 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 12 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 6.1 nC
Qgs Gate Source Charge VGS=-4.5V, VDS=-10V, ID=-3A 0.6 nC
Qgd Gate Drain Charge 1.6 nC
tD(on) Turn-On DelayTime 10 ns
tr Turn-On Rise Time VGS=-4.5V, VDS=-10V, RL=3.3Ω, 12 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 44 ns
tf Turn-Off Fall Time 22 ns
trr Body Diode Reverse Recovery Time IF=-3A, dI/dt=100A/µs 21 ns
Qrr Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/µs 7.5 nC

A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.

Alpha & Omega Semiconductor, Ltd.

AO3413

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

15 6
-4.5V
VDS=-5V
-3.0V -2.5V
-8V
10 4

-2.0V
-ID (A)

-ID(A)
5 2 125°C
VGS=-1.5V

25°C

0 0
0 1 2 3 4 5 0 0.5 1 1.5 2
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

200 1.8

VGS=-2.5V
Normalized On-Resistance

VGS=-1.8V 1.6

150
RDS(ON) (mΩ)

VGS=-1.8V
1.4
VGS=-2.5V VGS=-4.5V

1.2
100
VGS=-4.5V
1

50 0.8
0 2 4 6 0 25 50 75 100 125 150 175
-ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

200 1E+01

1E+00
ID=-4A
1E-01 125°C
150
RDS(ON) (mΩ)

1E-02 25°C
-IS (A)

125°C
1E-03
100 25°C
1E-04

1E-05

50
1E-06
0 2 4 6 8
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

AO3413

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 800

VDS=-10V
4 ID=-3A Ciss
600

Capacitance (pF)
-VGS (Volts)

3
400
2

200 Crss
1
Coss

0 0
0 2 4 6 8 0 5 10 15 20
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
20
TJ(Max)=150°C TJ(Max)=150°C
TA=25°C 100µs TA=25°C
10µs 15
10.0
Power (W)
-ID (Amps)

RDS(ON) 1ms
10
limited 0.1s 10ms
1.0
1s 5
10s
DC
0
0.1
0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100
-VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note E)
Operating Area (Note E)

10
In descending order
D=Ton/(Ton+Toff) D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA
Thermal Resistance

RθJA=90°C/W
1

PD
0.1
Ton
Single Pulse T

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

 SOT-23 Package Data

DIMENSIONS IN MILLIMETERS
SYMBOLS
MIN NOM MAX
A 1.00 −−− 1.25
θ A1 0.00 −−− 0.10
A2 1.00 1.10 1.15
b 0.35 0.40 0.50
C 0.10 0.15 0.25
D 2.80 2.90 3.04
E 2.60 2.80 2.95
E1 1.40 1.60 1.80
e −−− 0.95 BSC −−−
e1 −−− 1.90 BSC −−−
L 0.40 −−− 0.60
θ1 1° 5° 8°

NOTE:
SEATING PLANE
GAUGE PLANE

1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN.

THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD
2. TOLERANCE ±0.10 mm (4 mil) UNLESS OTHERWISE
SPECIFIED
3. COPLANARITY : 0.10 mm
4. DIMENSION L IS MEASURED IN GAGE PLANE

PACKAGE MARKING DESCRIPTION RECOMMENDATION OF LAND PATTERN

SOT-23 PART NO. CODE

PNDLN PART NO. CODE

AO3411 AB

NOTE:
P N - PART NUMBER CODE.
D - YAER AND WEEK CODE.
L N - ASSEMBLY LOT CODE, FAB AND
ASSEMBLY LOCATION CODE.

Rev. A
 ALPHA & OMEGA SOT-23 Tape and Reel Data
SEMICONDUCTOR, INC.

SOT-23 Carrier Tape

SOT-23 Reel

SOT-23 Tape
Leader / Trailer
& Orientation