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    2SC5200 PDF

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    Bhadreshkumar Sharma

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    © All Rights Reserved
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    2SC5200 PDF

    Uploaded by

    Bhadreshkumar Sharma
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    2SC5200.pdf

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    180 views3 pages

    2SC5200 PDF

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    Bhadreshkumar Sharma

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    © All Rights Reserved
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    UTC 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR

    POWER AMPLIFIER
    APPLICATIONS

    FEATURES
    * Recommended for 100W High Fidelity Audio Frequency
    Amplifier Output Stage.
    * Complementary to UTC 2SA1943

    TO-3PL

    *Pb-free plating product number: 2SC5200L

    ABSOLUTE MAXIMUM RATINGS (TC = 25℃)


    PARAMETER SYMBOL RATINGS UNIT
    Collector-Base Voltage VCBO 230 V
    Collector-Emitter Voltage VCEO 230 V
    Emitter-Base Voltage VEBO 5 V
    Collector Current IC 15 A
    Base Current IB 1.5 A
    Collector Power Dissipation (Tc=25℃) PC 150 W
    Junction Temperature TJ 150 ℃
    Storage Temperature Range Tstg -55 ~ 150 ℃

    ELECTRICAL CHARACTERISTICS (Tc=25℃)


    PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
    Collector-Emitter Breakdown Voltage V(BR) CEO IC= 50mA, IB=0 230 V
    Collector-Emitter Saturation Voltage VCE (sat) IC= 8A, IB= 0.8A 0.40 3.0 V
    Base -Emitter Voltage VBE VCE= 5V, IC= 7A 1.0 1.5 V
    Collector Cut-off Current ICBO VCB = 230V, IE=0 5.0 μA
    Emitter Cut-off Current IEBO VEB= 5V, IC=0 5.0 μA
    DC Current Gain hFE1 VCE= 5V, IC= 1A 55 160
    hFE2 VCE= 5V, IC= 7A 35 60
    Transition Frequency fT VCE= 5V, IC= 1A 30 MHz
    Collector Output Capacitance Cob VCB= 10V, IE=0, f=1MHz 200 pF
    Note: hFE (1) Classification, R : 55 ~ 110, O : 80 ~ 160

    CLASSIFICATION OF HFE1
    RANK R O
    Range 55 ~ 110 80 ~ 160

    UTC UNISONIC TECHNOLOGIES CO. LTD 1


    QW-R214-005,A
    UTC 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR
    TYPICAL CHARACTERISTICS
    IC - VCE IC - VBE
    -20 -20
    COMMON EMITTER COMMON EMITTER
    TC =25℃ VCE = 5V
    COLLECTOR CURRENT, IC (A)

    COLLECTOR CURRENT, IC (A)


    -16 800 -16
    600
    400
    -12
    300 250 -12
    200
    150
    100 TC =100℃
    -8 -8
    IB = 10mA
    50
    40 25
    -4 -4
    30 -25
    20
    0 0
    0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2.0
    COLLECTOR-EMITTER VOLTAGE, V CE (V) BASE-EMITTER VOLTAGE, V BE (V)

    VCE(sat) - IC hFE - IC
    COLLECTOR-EMITTER SATURATION

    3 300
    TC =100℃
    DC CURRENT GAIN, hFE
    VOLTAGE, VCE(sat) (V)

    1 100 25

    -25
    0.3 30
    TC =100℃

    0.1 -25 10

    25
    0.03 3
    COMMON EMITTER COMMON EMITTER
    IC / IB = 10 IC / IB = 10
    0.01 1
    0.01 0.1 1 10 100 0.01 0.1 1 10 100

    COLLECTOR CURRENT, IC (A) COLLECTOR CURRENT, IC (A)

    SAFE OPERATING AREA


    50
    IC MAX. (PULSED)※
    30 1ms※
    IC MAX.
    (CONTINUOUS)
    10ms※
    10
    COLLECTOR CURRENT, I C (A)

    DC OPERATION
    5
    TC =25℃
    3 100ms※

    0.5
    0.3
    ※SINGLE NONREPETITIVE
    PULSE TC = 25℃
    0.1 CURVES MUST BE
    DERATED LINEARLY
    0.05 WITH INCREASE IN VCEO MAX.
    TEMPERATURE.
    0.03
    3 10 30 100 300 1000

    COLLECTOR-EMITTER VOLTAGE, VCE (V)

    UTC UNISONIC TECHNOLOGIES CO. LTD 2


    QW-R214-005,A
    UTC 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR

    UTC assumes no responsibility for equipment failures that result from using products at values that
    exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
    other parameters) listed in products specifications of any and all UTC products described or contained
    herein. UTC products are not designed for use in life support appliances, devices or systems where
    malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
    whole or in part is prohibited without the prior written consent of the copyright owner. The information
    presented in this document does not form part of any quotation or contract, is believed to be accurate
    and reliable and may be changed without notice.

    UTC UNISONIC TECHNOLOGIES CO. LTD 3


    QW-R214-005,A

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