STH12NA60/FI

STW12NA60
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR

TYPE V DSS R DS( on) ID

STH12NA60 600 V < 0.6 Ω 12 A
STH12NA60FI 600 V < 0.6 Ω 7A
TO-247
STW12NA60 600 V < 0.6 Ω 12 A

■ TYPICAL RDS(on) = 0.44 Ω

■ ± 30V GATE TO SOURCE VOLTAGE RATING 3
2
■ 100% AVALANCHE TESTED 1
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW INTRINSIC CAPACITANCES
■ GATE GHARGE MINIMIZED
■ REDUCED THRESHOLD VOLTAGE SPREAD
3 3
2 2
DESCRIPTION 1
1
This series of POWER MOSFETS represents the TO-218 ISOWATT218
most advanced high voltage technology. The op-
timized cell layout coupled with a new proprietary
edge termination concur to give the device low
RDS(on) and gate charge, unequalled ruggedness INTERNAL SCHEMATIC DIAGRAM
and superior switching performance.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STH/STW12NA60 STH12NA60FI
VD S Drain-source Voltage (V GS = 0) 600 V
V DG R Drain- gate Voltage (R GS = 20 kΩ) 600 V
V GS Gate-source Voltage ± 30 V
o
ID Drain Current (continuous) at T c = 25 C 12 7 A
ID Drain Current (continuous) at T c = 100 oC 7.6 4.4 A
ID M(•) Drain Current (pulsed) 48 48 A
o
P tot Total Dissipation at Tc = 25 C 190 80 W
Derating Factor 1.52 0.64 W/o C
V ISO Insulation Withstand Voltage (DC)  4000 V
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
(•) Pulse width limited by safe operating area

November 1996 1/11

STH12NA60/FI - STW12NA60

THERMAL DATA

TO-218/TO-247 ISOWATT218
o
R thj-cas e Thermal Resistance Junction-case Max 0.66 1.56 C/W
o
Rthj- amb Thermal Resistance Junction-ambient Max 30 C/W
o
Rt hc- sin k Thermal Resistance Case-sink Typ 0.1 C/W
o
Tl Maximum Lead Temperature For Soldering Purpose 300 C

AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IA R Avalanche Current, Repetitive or Not-Repetitive 12 A
(pulse width limited by T j max, δ < 1%)
E AS Single Pulse Avalanche Energy 700 mJ
(starting T j = 25 o C, ID = I AR, VD D = 50 V)
E AR Repetitive Avalanche Energy 28 mJ
(pulse width limited by T j max, δ < 1%)
IA R Avalanche Current, Repetitive or Not-Repetitive 7.6 A
(T c = 100 o C, pulse width limited by T j max, δ < 1%)

o
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V( BR)DSS Drain-source I D = 250 µA VG S = 0 600 V
Breakdown Voltage
I DS S Zero Gate Voltage V DS = Max Rating 25 µA
Drain Current (V GS = 0) V DS = Max Rating x 0.8 T c = 125 oC 250 µA
IG SS Gate-body Leakage V GS = ± 30 V ± 100 nA
Current (V D S = 0)

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V G S(th) Gate Threshold Voltage V DS = V GS ID = 250 µA 2.25 3 3.75 V
R DS( on) Static Drain-source On V GS = 10V ID = 6 A 0.44 0.6 Ω
Resistance
I D( on) On State Drain Current V DS > ID( on) x RD S(on) max 12 A
V GS = 10 V

DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗) Forward V DS > ID( on) x RD S(on) max ID = 6 A 8 12 S
Transconductance
C iss Input Capacitance V DS = 25 V f = 1 MHz VG S = 0 2500 3250 pF
C oss Output Capacitance 310 410 pF
C rss Reverse Transfer 85 110 pF
Capacitance

2/11
 STH12NA60/FI - STW12NA60

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t d(on) Turn-on Time V DD = 300 V I D = 6 A 25 35 ns
tr Rise Time R G = 4.7 Ω V GS = 10 V 35 50 ns
(see test circuit, figure 3)
(di/dt) on Turn-on Current Slope V DD = 480 V I D = 12 A 190 A/µs
R G = 47 Ω VGS = 10 V
(see test circuit, figure 5)
Qg Total Gate Charge V DD = 480 V ID = 12 A VG S = 10 V 110 150 nC
Q gs Gate-Source Charge 15 nC
Q gd Gate-Drain Charge 47 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t r(Vof f) Off-voltage Rise Time V DD = 480 V ID = 12 A 35 50 ns
tf Fall Time R G = 4.7 Ω V GS = 10 V 20 30 ns
tc Cross-over Time (see test circuit, figure 5) 57 80 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit
IS D Source-drain Current 12 A
I SDM(•) Source-drain Current 48 A
(pulsed)
V S D (∗) Forward On Voltage I SD = 12 A VG S = 0 1.6 V
t rr Reverse Recovery I SD = 12 A di/dt = 100 A/µs 670 ns
Time V DD = 100 V T j = 150 o C
Q rr Reverse Recovery (see test circuit, figure 5) 12.7 µC
Charge
I RRM Reverse Recovery 38 A
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area

Safe Operating Areas For TO-218 and TO-247 Safe Operating Areas For ISOWATT218

3/11
STH12NA60/FI - STW12NA60

Thermal Impedeance For TO-218 and TO-247 Thermal Impedance For ISOWATT218

Derating Curve For TO-218 and TO-247 Derating Curve For ISOWATT218

Output Characteristics Transfer Characteristics

4/11
 STH12NA60/FI - STW12NA60

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

Normalized Gate Threshold Voltage vs Normalized On Resistance vs Temperature

Temperature

5/11
STH12NA60/FI - STW12NA60

Turn-on Current Slope Turn-off Drain-source Voltage Slope

Cross-over Time Switching Safe Operating Area

Accidental Overload Area Source-drain Diode Forward Characteristics

6/11
 STH12NA60/FI - STW12NA60

Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms

Fig. 3: Switching Times Test Circuits For Fig. 4: Gate Charge Test Circuit
Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Reverse Recovery Time

7/11
STH12NA60/FI - STW12NA60

TO-247 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 4.7 5.3 0.185 0.208

A1 2.87 0.113

A2 1.5 2.5 0.059 0.098

b 1 1.4 0.039 0.055

b1 2.25 0.088

b2 3.05 3.43 0.120 0.135

C 0.4 0.8 0.015 0.031

D 20.4 21.18 0.803 0.833

e 5.43 5.47 0.213 0.215

E 15.3 15.95 0.602 0.628

L 15.57 0.613

L1 3.7 4.3 0.145 0.169

Q 5.3 5.84 0.208 0.230

ØP 3.5 3.71 0.137 0.146

C
A

A1
A2

D L

Q L1
b1

ø
e
E

b2

8/11
 STH12NA60/FI - STW12NA60

TO-218 (SOT-93) MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 4.7 4.9 0.185 0.193

C 1.17 1.37 0.046 0.054

D 2.5 0.098

E 0.5 0.78 0.019 0.030

F 1.1 1.3 0.043 0.051

G 10.8 11.1 0.425 0.437

H 14.7 15.2 0.578 0.598

L2 – 16.2 – 0.637

L3 18 0.708

L5 3.95 4.15 0.155 0.163

L6 31 1.220

R – 12.2 – 0.480

Ø 4 4.1 0.157 0.161

E
A
C

L5 L6

L3
L2
G
H

Ø
F

R 1 2 3 P025A

9/11
STH12NA60/FI - STW12NA60

ISOWATT218 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 5.35 5.65 0.210 0.222
C 3.3 3.8 0.130 0.149
D 2.9 3.1 0.114 0.122
D1 1.88 2.08 0.074 0.081
E 0.45 1 0.017 0.039
F 1.05 1.25 0.041 0.049
G 10.8 11.2 0.425 0.441
H 15.8 16.2 0.622 0.637
L1 20.8 21.2 0.818 0.834
L2 19.1 19.9 0.752 0.783
L3 22.8 23.6 0.897 0.929
L4 40.5 42.5 1.594 1.673
L5 4.85 5.25 0.190 0.206
L6 20.25 20.75 0.797 0.817
M 3.5 3.7 0.137 0.145
N 2.1 2.3 0.082 0.090
U 4.6 0.181

L3

N
E
A

D
D1
C

L2

L5 L6
F

M
U

G
H

1 2 3
L1
L4
P025C

10/11
 STH12NA60/FI - STW12NA60

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.

 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved

SGS-THOMSON Microelectronics GROUP OF COMPANIES

Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
.

11/11