DSA300I200NA

preliminary

Schottky Diode Gen ² VRRM = 200 V

I FAV = 300 A
VF = 0.91 V

High Performance Schottky Diode

Low Loss and Soft Recovery
Single Diode
Part number

DSA300I200NA

Backside: Isolated

2 1
3 4

Features / Advantages: Applications: Package: SOT-227B (minibloc)

● Very low Vf ● Rectifiers in switch mode power ● Isolation Voltage: 3000 V~
● Extremely low switching losses supplies (SMPS) ● Industry standard outline
● Low Irm values ● Free wheeling diode in low voltage ● RoHS compliant
● Improved thermal behaviour converters ● Epoxy meets UL 94V-0
● High reliability circuit operation ● Base plate: Copper
● Low voltage peaks for reduced internally DCB isolated
protection circuits ● Advanced power cycling
● Low noise switching

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20120907a

© 2012 IXYS all rights reserved

 DSA300I200NA
preliminary
Schottky Ratings
Symbol Definition Conditions min. typ. max. Unit
VRSM max. non-repetitive reverse blocking voltage TVJ = 25°C 200 V
VRRM max. repetitive reverse blocking voltage TVJ = 25°C 200 V
IR reverse current, drain current VR = 200 V TVJ = 25°C 3 mA
VR = 200 V TVJ = 150°C 30 mA
VF forward voltage drop I F = 300 A TVJ = 25°C 1.03 V
I F = 600 A 1.29 V
I F = 300 A TVJ = 125°C 0.91 V
I F = 600 A 1.22 V
I FAV average forward current TC = 95°C T VJ = 150 °C 300 A
rectangular d = 0.5
VF0 threshold voltage TVJ = 150 °C 0.57 V
for power loss calculation only
rF slope resistance 1.03 mΩ
R thJC thermal resistance junction to case 0.15 K/W
R thCH thermal resistance case to heatsink 0.10 K/W
Ptot total power dissipation TC = 25°C 830 W
I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C 4.80 kA
CJ junction capacitance VR = 24 V f = 1 MHz TVJ = 25°C 2.22 nF

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20120907a

© 2012 IXYS all rights reserved

 DSA300I200NA
preliminary
Package SOT-227B (minibloc) Ratings
Symbol Definition Conditions min. typ. max. Unit
1)
I RMS RMS current per terminal 150 A
Tstg storage temperature -40 150 °C
T VJ virtual junction temperature -40 150 °C
Weight 30 g
MD mounting torque 1.1 1.5 Nm
MT terminal torque 1.1 1.5 Nm
d Spp/App terminal to terminal 10.5 3.2 mm
creepage distance on surface | striking distance through air
d Spb/Apb terminal to backside 8.6 6.8 mm
VISOL isolation voltage t = 1 second 3000 V
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute 2500 V

Product Marking Part number

D = Diode
S = Schottky Diode
Logo abcde Part No. A
300
=
=
low VF
Current Rating [A]
YYWW Z XXXXXX I = Single Diode
200 = Reverse Voltage [V]
NA = SOT-227B (minibloc)
DateCode Assembly Code
Assembly Line

Ordering Part Number Marking on Product Delivery Mode Quantity Code No.
Standard DSA300I200NA DSA300I200NA Tube 10 511258

Similar Part Package Voltage class

DSA300I45NA SOT-227B (minibloc) 45
DSA300I100NA SOT-227B (minibloc) 100

Equivalent Circuits for Simulation * on die level T VJ = 150°C

V0 Schottky
I R0

V 0 max threshold voltage 0.57 V

R 0 max slope resistance * 0.21 mΩ

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20120907a

© 2012 IXYS all rights reserved

 DSA300I200NA
preliminary
Outlines SOT-227B (minibloc)

2 1
3 4

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20120907a

© 2012 IXYS all rights reserved

 DSA300I200NA
preliminary
Schottky
600

500

400
IF
300
TVJ =
[A]
25°C
200
125°C
150°C
100

0
0.4 0.8 1.2
VF [V]
Fig. 1 Max. forward voltage Fig. 2 Typ. reverse current Fig. 3 Typ. junction capacitance
drop characteristics IR vs. reverse voltage VR CT vs. reverse voltage VR

350
250 dc = RthHA
1 300
0.2
0.5
0.4
200 0.4
0.6 250
0.33
0.8 IF(AV) dc =
0.17
1.0 1
0.08 200
150 2.0 0.5
P(AV) [A] 0.4
150 0.33
100 0.17
[W] 100 0.08

50
50

0 0
0 50 100 150 200 250 0 40 80 120 160 0 40 80 120 160
IF(AV) [A] Tamb [°C] TC [°C]

Fig. 4a Power dissipation versus direct output current Fig. 5 Average forward current
Fig. 4b and ambient temperature IF(AV) vs. case temp. TC

0.16

0.12
Rthi [K/W] ti [s]
ZthJC 0.017 0.01
0.013 0.00001
0.08
0.02 0.01
[K/W] 0.05 0.045
0.05 0.3
0.04

0.00
1 10 100 1000 10000
t [ms]
Fig. 6 Transient thermal impedance junction to case

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20120907a

© 2012 IXYS all rights reserved