STGW80H65FB, STGWA80H65FB,

STGWT80H65FB
Trench gate field-stop IGBT, HB series
650 V, 80 A high speed
Datasheet - production data

Features
• Maximum junction temperature: TJ = 175 °C
TAB
• High speed switching series
• Minimized tail current
• VCE(sat) = 1.6 V (typ.) @ IC = 80 A
2
3
2
3
• Tight parameter distribution
1 1
• Safe paralleling
TO-247 TO-3P
• Low thermal resistance
TO-247 long leads

Applications
• Photovoltaic inverters
Figure 1. Internal schematic diagram
• High frequency converters
C (2 or TAB)

Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the new “HB”
G (1) series of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of any
frequency converter. Furthermore, a slightly
positive VCE(sat) temperature coefficient and very
tight parameter distribution result in safer
E (3) paralleling operation.

Table 1. Device summary

Order code Marking Package Packaging

STGW80H65FB GW80H65FB TO-247 Tube

STGWA80H65FB GWA80H65FB TO-247 long leads Tube
STGWT80H65FB GWT80H65FB TO-3P Tube

June 2014 DocID026401 Rev 1 1/18

This is information on a product in full production. www.st.com 18
Contents STGW80H65FB, STGWA80H65FB, STGWT80H65FB

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

4.1 TO-247, STGW80H65FB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.2 TO-247 long leads, STGWA80H65FB . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.3 TO-3P, STGWT80H65FB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

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STGW80H65FB, STGWA80H65FB, STGWT80H65FB Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0) 650 V

IC (1)
Continuous collector current at TC = 25 °C 120 A
IC Continuous collector current at TC = 100 °C 80 A
ICP(2) Pulsed collector current 240 A
VGE Gate-emitter voltage ±20 V
PTOT Total dissipation at TC = 25 °C 469 W
TSTG Storage temperature range - 55 to 150 °C
TJ Operating junction temperature - 55 to 175 °C
1. Current level is limited by bond wires.
2. Pulse width limited by maximum junction temperature.

Table 3. Thermal data

Symbol Parameter Value Unit

RthJC Thermal resistance junction-case 0.32 °C/W

RthJA Thermal resistance junction-ambient 50 °C/W

DocID026401 Rev 1 3/18

Electrical characteristics STGW80H65FB, STGWA80H65FB, STGWT80H65FB

2 Electrical characteristics

TJ = 25 °C unless otherwise specified.

Table 4. Static characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Collector-emitter
V(BR)CES breakdown voltage IC = 2 mA 650 V
(VGE = 0)
VGE = 15 V, IC = 80 A 1.6 2
VGE = 15 V, IC = 80 A
Collector-emitter saturation 1.8
VCE(sat) TJ = 125 °C V
voltage
VGE = 15 V, IC = 80 A
1.9
TJ = 175 °C
VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V
Collector cut-off current
ICES VCE = 650 V 100 µA
(VGE = 0)
Gate-emitter leakage
IGES VGE = ± 20 V 250 nA
current (VCE = 0)

Table 5. Dynamic characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Cies Input capacitance - 10524 - pF

Coes Output capacitance VCE = 25 V, f = 1 MHz, - 385 - pF
VGE = 0
Reverse transfer
Cres - 215 - pF
capacitance
Qg Total gate charge - 414 - nC
VCC = 520 V, IC = 80 A,
Qge Gate-emitter charge - 78 - nC
VGE = 15 V, see Figure 23
Qgc Gate-collector charge - 170 - nC

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STGW80H65FB, STGWA80H65FB, STGWT80H65FB Electrical characteristics

Table 6. IGBT switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time - 84 - ns

tr Current rise time - 52 - ns
(di/dt)on Turn-on current slope - 1270 - A/µs
VCE = 400 V, IC = 80 A,
td(off) Turn-off delay time - 280 - ns
RG = 10 Ω, VGE = 15 V,
tf Current fall time - 31 - ns
see Figure 22
Eon(1) Turn-on switching losses - 2.1 - mJ
Eoff(2) Turn-off switching losses - 1.5 - mJ
Ets Total switching losses - 3.6 - mJ
td(on) Turn-on delay time - 77 - ns
tr Current rise time - 51 - ns
(di/dt)on Turn-on current slope - 1270 - A/µs
td(off) Turn-off delay time VCE = 400 V, IC = 80 A, - 328 - ns
RG = 10 Ω, VGE = 15 V,
tf Current fall time TJ = 175 °C, see Figure 22 - 30 - ns
Eon(1) Turn-on switching losses - 4.4 - mJ
Eoff(2) Turn-off switching losses - 2.1 - mJ
Ets Total switching losses - 6.5 - mJ
1. Energy losses include reverse recovery of the external diode. The diode is the same of the co-packed
STGW80H65DFB
2. Turn-off losses include also the tail of the collector current.

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Electrical characteristics STGW80H65FB, STGWA80H65FB, STGWT80H65FB

2.1 Electrical characteristics (curves)

Figure 2. Output characteristics (TJ = 25°C) Figure 3. Output characteristics (TJ = 175°C)
GIPD130920131606FSR GIPD160920130919FSR
IC IC
(A) (A)
VGE=15V VGE=15V 11V
11V
140 140
9V
120 9V 120

100 100

80 80

60 60
40 40
7V
20 20
0 0
0 1 2 3 4 VCE(V) 0 1 2 3 4 VCE(V)

Figure 4. Transfer characteristics Figure 5. Collector current vs. case temperature

GIPD160920130924FSR GIPD160920130941FSR
IC IC
(A) (A)
VGE = 15 V, TJ = 175 °C
VCE=10V 120
140

120 100
25°C
100 80
TJ=175°C
80 -40°C
60
60
40
40

20 20

0 0
6 7 8 9 10 11 VGE(V) 0 25 50 75 100 125 150 TJ(°C)

Figure 6. Power dissipation vs. case Figure 7. VCE(sat) vs. junction temperature
temperature
GIPD160920130948FSR GIPD160920130952FSR
Ptot VCE(sat)
(W) VGE = 15 V, TJ = 175 °C (V)
450 2.6 VGE= 15V
400
2.4
350 IC= 160A
2.2
300
250 2
200
1.8
150 IC= 80A
1.6
100
50 1.4
IC= 40A
0 1.2
0 25 50 75 100 125 150 TJ(°C) -50 0 50 100 150 TJ(°C)

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STGW80H65FB, STGWA80H65FB, STGWT80H65FB Electrical characteristics

Figure 8. VCE(sat) vs. collector current Figure 9. Forward bias safe operating area
GIPD160920131029FSR GIPD160920131115FSR
VCE(sat) IC
(V) (A)
2.6 VGE= 15V
2.4
TJ= 175°C 100
2.2
TJ= 25°C
2 10μs

1.8 10 100μs
1.6 Single pulse 1ms
TJ= -40°C Tc= 25°C, TJ ≤ 175°C
1.4
1 VGE= 15V
1.2
1
0.8 0.1
0 20 40 60 80 100 120 140 IC(A) 1 10 100 VCE(V)

Figure 10. Capacitance variations Figure 11. Normalized V(BR)CES vs. junction
temperature
GIPD160920131200FSR GIPD160920131144FSR
C V(BR)CES
(pF) (norm)

1.1
10000 Cies

1000
1
IC= 2mA

Coes
100
Cres

10 0.9
0.1 1 10 100 VCE(V) -50 0 50 100 150 TJ(°C)

Figure 12. Normalized VGE(th) vs. junction Figure 13. Gate charge vs. gate-emitter voltage
temperature
GIPD160920131151FSR GIPD160920131156FSR
VGE VGE
(norm) (V)
1.1 16
IC= 1mA
IC= 80A
14 VCC= 520V
1
12

0.9 10

8
0.8 6
4
0.7
2

0.6 0
-50 0 50 100 150 TJ(°C) 0 100 200 300 400 Qg(nC)

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Electrical characteristics STGW80H65FB, STGWA80H65FB, STGWT80H65FB

Figure 14. Switching loss vs temperature Figure 15. Switching loss vs gate resistance
GIPD160920131504FSR GIPD160920131208FSR
E E
(μJ) (μJ)
VCC= 400V, VGE = 15V VCC= 400V, VGE = 15V
4500 IC= 80A, Rg= 10Ω IC= 80A, TJ= 175°C
EON 5000
4000
EON
3500 4200

3000 3400
2500
EOFF 2600
2000
1800 EOFF
1500

1000 1000
0 25 50 75 100 125 150 175 TJ(°C) 2 6 10 14 18 RG(Ω)

Figure 16. Switching loss vs collector current Figure 17. Switching loss vs collector emitter
voltage
GIPD160920131436FSR GIPD160920131524FSR
E E
(μJ) (μJ)
VCC= 400V, VGE = 15V 6000 TJ= 175°C, VGE = 15V
RG= 10Ω, TJ= 175°C IC= 80A, Rg= 10Ω
9000 EON
8000 5000
7000
EON
6000 4000
5000
4000 3000
3000
EOFF 2000 EOFF
2000
1000
0 1000
0 20 40 60 80 100 120 140 IC(A) 150 200 250 300 350 400 450 VCE(V)

Figure 18. Switching times vs. collector current Figure 19. Switching times vs. gate resistance
GIPD160920131533FSR GIPD160920131539FSR
t t
(ns) (ns) TJ= 175°C, VGE = 15V tdoff
tdoff VCC= 400V, IC= 80A

100 tdon
tdon
tr
100
tr

10 tf
tf

TJ= 175°C, VGE = 15V

VCC= 400V, Rg= 10Ω
1 10
20 40 60 80 100 120 140 IC(A) 4 8 12 16 20 Rg(Ω)

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STGW80H65FB, STGWA80H65FB, STGWT80H65FB Electrical characteristics

Figure 20. Collector current vs. switching

frequency
GIPD260520141426FSR
Ic [A]

160

140 Tc=80°C

120 Tc=100 °C

100

80
rectangular current shape,
60 (duty cycle=0.5, VCC = 400V, RG=10 Ω,
VGE = 0/15 V, TJ =175°C)

40
1 10 f [kHz]

Figure 21. Thermal impedance

ZthTO2T_A
K
d=0.5

0.2

0.1

10-1 0.05

0.02

0.01

Single pulse
10-2
10-5 10-4 10-3 10-2 10-1 tp (s)

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Test circuits STGW80H65FB, STGWA80H65FB, STGWT80H65FB

3 Test circuits

Figure 22. Test circuit for inductive load Figure 23. Gate charge test circuit
switching

k
k

AM01504v1 AM01505v1

Figure 24. Switching waveform

90%

VG 10%

90%

VCE Tr(Voff)
10%
Tcross

90%

IC Td(off)
10%
Td(on) Tf
Tr(Ion)
Toff
Ton

AM01506v1

10/18 DocID026401 Rev 1

STGW80H65FB, STGWA80H65FB, STGWT80H65FB Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.

4.1 TO-247, STGW80H65FB

Figure 25. TO-247 drawing

0075325_G

DocID026401 Rev 1 11/18

Package mechanical data STGW80H65FB, STGWA80H65FB, STGWT80H65FB

Table 7. TO-247 mechanical data

mm.
Dim.
Min. Typ. Max.

A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70

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STGW80H65FB, STGWA80H65FB, STGWT80H65FB Package mechanical data

4.2 TO-247 long leads, STGWA80H65FB

Figure 26. TO-247 long leads drawing

8463846_A_F

DocID026401 Rev 1 13/18

Package mechanical data STGW80H65FB, STGWA80H65FB, STGWT80H65FB

Table 8. TO-247 long leads mechanical data

mm
Dim.
Min. Typ. Max.

A 4.90 5.00 5.10

A1 2.31 2.41 2.51
A2 1.90 2.00 2.10
b 1.16 1.26
b2 3.25
b3 2.25
c 0.59 0.66
D 20.90 21.00 21.10
E 15.70 15.80 15.90
E2 4.90 5.00 5.10
E3 2.40 2.50 2.60
e 5.34 5.44 5.54
L 19.80 19.92 20.10
L1 4.30
P 3.50 3.60 3.70
Q 5.60 6.00
S 6.05 6.15 6.25

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STGW80H65FB, STGWA80H65FB, STGWT80H65FB Package mechanical data

4.3 TO-3P, STGWT80H65FB

Figure 27. TO-3P drawing

8045950_B

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Package mechanical data STGW80H65FB, STGWA80H65FB, STGWT80H65FB

Table 9. TO-3P mechanical data

mm
Dim.
Min. Typ. Max.

A 4.60 4.80 5
A1 1.45 1.50 1.65
A2 1.20 1.40 1.60
b 0.80 1.00 1.20
b1 1.80 2.00 2.20
b2 2.80 3.00 3.20
c 0.55 0.60 0.75
D 19.70 19.90 20.10
D1 13.70 13.90 14.10
E 15.40 15.60 15.80
E1 13.40 13.60 13.80
E2 9.40 9.60 9.90
e 5.15 5.45 5.75
L 19.80 20 20.20
L1 3.30 3.50 3.70
L2 18.20 18.40 18.60
øP 3.30 3.40 3.50
øP1 3.10 3.20 3.30
Q 4.80 5 5.20
Q1 3.60 3.80 4

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STGW80H65FB, STGWA80H65FB, STGWT80H65FB Revision history

5 Revision history

Table 10. Document revision history

Date Revision Changes

13-Jun-2014 1 Initial release.

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 STGW80H65FB, STGWA80H65FB, STGWT80H65FB

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18/18 DocID026401 Rev 1