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Course Code and Title:: Eee 416: Vlsi Circuits & Systems

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Md. Abu Shayem

This document describes an experiment conducted to design and simulate a nMOS device using the SILVACO platform. The experiment involves defining the device structure by specifying regions, materials, doping concentrations, and electrodes. Device simulations are then carried out by solving for various gate and drain voltages and the resulting characteristics such as ID-VG curves, threshold voltage, subthreshold slope, and DIBL are analyzed. Simulation output files and structure files are saved for plotting the device characteristics.

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Course Code and Title:: Eee 416: Vlsi Circuits & Systems

Uploaded by

Md. Abu Shayem
50 views15 pages
This document describes an experiment conducted to design and simulate a nMOS device using the SILVACO platform. The experiment involves defining the device structure by specifying regions, materials, doping concentrations, and electrodes. Device simulations are then carried out by solving for various gate and drain voltages and the resulting characteristics such as ID-VG curves, threshold voltage, subthreshold slope, and DIBL are analyzed. Simulation output files and structure files are saved for plotting the device characteristics.

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EEE416_Lab-3_2019-1-80-021

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This document describes an experiment conducted to design and simulate a nMOS device using the SILVACO platform. The experiment involves defining the device structure by specifying regions, materials, doping concentrations, and electrodes. Device simulations are then carried out by solving for various gate and drain voltages and the resulting characteristics such as ID-VG curves, threshold voltage, subthreshold slope, and DIBL are analyzed. Simulation output files and structure files are saved for plotting the device characteristics.

Copyright:

© All Rights Reserved
Download as PDF, TXT or read online from Scribd
Download as pdf or txt
50 views15 pages

Course Code and Title:: Eee 416: Vlsi Circuits & Systems

Uploaded by

Md. Abu Shayem
This document describes an experiment conducted to design and simulate a nMOS device using the SILVACO platform. The experiment involves defining the device structure by specifying regions, materials, doping concentrations, and electrodes. Device simulations are then carried out by solving for various gate and drain voltages and the resulting characteristics such as ID-VG curves, threshold voltage, subthreshold slope, and DIBL are analyzed. Simulation output files and structure files are saved for plotting the device characteristics.

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Course Code and Title:

EEE 416: VLSI CIRCUITS & SYSTEMS


Semester and Year:

Spring – 2022

Experiment Number and Name:

Experiment-3: Design of a nMOS device in SILVACO platform and simulation of


its characteristics
Name of Student and ID: Instructor:

Md. Abu Shayem Dr. Mohammad Mojammel Al Hakim


ID: 2019-1-80-021 Chairperson, EEE
Date of Submission: Date of Performance:

27 March, 2022 20 March, 2022


go atlas
# Here the mesh for the device is defined.
mesh
x.mesh loc=-0.20 spac=0.025
# This defines the x-axis mesh starting from x = -inf to -0.2
x.mesh loc=-0.15 spac=0.025
# The mesh for x - the previous x = -0.2 to -0.15 is defined with a spacing of 0.025
x.mesh loc=-0.05 spac=0.010
x.mesh loc=0.05 spac=0.010
x.mesh loc=0.15 spac=0.025
x.mesh loc=0.20 spac=0.025
y.mesh loc=-0.04 spac=0.005
#y-axis mesh from y = -inf to -0.04 with spacing of 0.005
y.mesh loc=-0.03 spac=0.005
#mesh for y = -0.04 to -0.03 is defined with a spacing of 0.005
y.mesh loc=-0.005 spac=0.0025
y.mesh loc=0.0 spac=0.0005
y.mesh loc=0.01 spac=0.002
y.mesh loc=0.10 spac=0.02
region number=1 x.min=-0.20 x.max=0.20 y.min=-0.04 y.max=0.0 material=oxide
#This region as defined by x and y will be the material oxide
region number=2 x.min=-0.20 x.max=0.20 y.min=0.0 y.max=0.10 material=silicon
region number=3 x.min=-0.05 x.max=0.05 y.min=-0.03 y.max=-0.005 material=poly
#The following are metal used to contact the device regions
region number=4 x.min=-0.05 x.max=0.05 y.min=-0.04 y.max=-0.03 material=aluminum
region number=5 x.min=-0.20 x.max=-0.15 y.min=-0.04 y.max=0.0 material=aluminum
region number=6 x.min=0.15 x.max=0.20 y.min=-0.04 y.max=0.0 material=aluminum
#In this part names are assigned to different metal contacts/electrodes
electrode x.min=-0.20 x.max=-0.15 y.min=-0.04 y.max=0.0 name=source
electrode x.min=-0.05 x.max=0.05 y.min=-0.04 y.max=-0.03 name=gate
electrode x.min=0.15 x.max=0.20 y.min=-0.04 y.max=0.0 name=drain
electrode bottom name=substrate
#The doping concentrations of different segments are defined in this segments
doping region=2 p.type concentration=1e16 uniform
doping region=3 n.type concentration=1e20 uniform
doping x.min=-0.2 x.max=-0.05 y.min=0.0 y.max=0.01 concentration=1e20 n.type uniform
#this part is the source
doping x.min=0.05 x.max=0.2 y.min=0.0 y.max=0.01 concentration=1e20 n.type uniform
#this part is the drain
save outfile=lab3_2019_1_80_021_device_structure.str
tonyplot lab3_2019_1_80_021_device_structure.str
# Device simulation
models cvt srh
# ID-VG curves at VD=0.1V
solve init
solve vdrain=0.005
solve vdrain=0.1
log outfile= lab3_2019_1_80_021_IDVG_VD01.log
solve vgate=0 vstep=0.05 vfinal=3.0 name=gate

# ID-VG curves at VD=1V


log outfile= temp.log
solve init
solve vdrain=0.005
solve vdrain=0.01
solve vdrain=0.1
solve vdrain=0.5
solve vdrain=1
log outfile= lab3_2019_1_80_021_IDVG_VD10.log
solve vgate=0 vstep=0.05 vfinal=3.0 name=gate

tonyplot -overlay lab3_2019_1_80_021_IDVG_VD01.log


lab3_2019_1_80_021_IDVG_VD10.log

# ID-VD curves at VG=0V


log outfile= temp.log
solve init
solve vgate=0.0

log outfile= lab3_2019_1_80_021_IDVG_VG0.log


solve vdrain=0 vstep=0.05 vfinal=3.0 name=drain

# ID-VD curves at VG=0.5V


log outfile= temp.log
solve init
solve vgate=0.005
solve vgate=0.01
solve vgate=0.1
solve vgate=0.3
solve vgate=0.5

log outfile= lab3_2019_1_80_021_IDVG_VG0_5.log


solve vdrain=0 vstep=0.05 vfinal=3.0 name=drain
#
# ID-VD curves at VG=1V
log outfile= temp.log
solve init
solve vgate=0.005
solve vgate=0.01
solve vgate=0.1
solve vgate=0.3
solve vgate=0.5
solve vgate=0.8
solve vgate=0.9
solve vgate=1

log outfile= lab3_2019_1_80_021_IDVG_VG1.log


solve vdrain=0 vstep=0.05 vfinal=3.0 name=drain
#
# ID-VD curves at VG=1.5V
log outfile= temp.log
solve init
solve vgate=0.005
solve vgate=0.01
solve vgate=0.1
solve vgate=0.3
solve vgate=0.5
solve vgate=0.8
solve vgate=0.9
solve vgate=1
solve vgate=1.1
solve vgate=1.3
solve vgate=1.5

log outfile= lab3_2019_1_80_021_IDVG_VG1_5.log


solve vdrain=0 vstep=0.05 vfinal=3.0 name=drain
#
# ID-VD curves at VG=2V
log outfile= temp.log
solve init
solve vgate=0.005
solve vgate=0.01
solve vgate=0.1
solve vgate=0.3
solve vgate=0.5
solve vgate=0.8
solve vgate=0.9
solve vgate=1
solve vgate=1.1
solve vgate=1.3
solve vgate=1.5
solve vgate=1.8
solve vgate=2
log outfile= lab3_2019_1_80_021_IDVG_VG2.log
solve vdrain=0 vstep=0.05 vfinal=3.0 name=drain
#
# ID-VD curves at VG=2.5V
log outfile= temp.log
solve init
solve vgate=0.005
solve vgate=0.01
solve vgate=0.1
solve vgate=0.3
solve vgate=0.5
solve vgate=0.8
solve vgate=0.9
solve vgate=1
solve vgate=1.1
solve vgate=1.3
solve vgate=1.5
solve vgate=1.8
solve vgate=2
solve vgate=2.2
solve vgate=2.5
log outfile= lab3_2019_1_80_021_IDVG_VG2_5.log
solve vdrain=0 vstep=0.05 vfinal=3.0 name=drain

# ID-VD curves at VG=3V


log outfile= temp.log
solve init
solve vgate=0.005
solve vgate=0.01
solve vgate=0.1
solve vgate=0.3
solve vgate=0.5
solve vgate=0.8
solve vgate=0.9
solve vgate=1
solve vgate=1.1
solve vgate=1.3
solve vgate=1.5
solve vgate=1.8
solve vgate=2
solve vgate=2.2
solve vgate=2.5
solve vgate=2.8
solve vgate=3
log outfile= lab3_2019_1_80_021_IDVG_VG3.log
solve vdrain=0 vstep=0.05 vfinal=3.0 name=drain
#
tonyplot -overlay lab3_2019_1_80_021_IDVG_VG0.log
lab3_2019_1_80_021_IDVG_VG0_5.log lab3_2019_1_80_021_IDVG_VG1.log
lab3_2019_1_80_021_IDVG_VG1_5.log lab3_2019_1_80_021_IDVG_VG2.log
lab3_2019_1_80_021_IDVG_VG2_5.log lab3_2019_1_80_021_IDVG_VG3.log
quit
Fig-1: Device structure plot

Fig-2: Plot to find subthreshold slop and DIBL for VD=0.1V and VD=1V.
Fig-3: Plot of IDVG curve for VD=0.1V and VD=1V.

Fig-4: Plot of IDVG curve for VD=0.1V to find threshold voltage


3.

Fig-5: Plot of IDVD curve for different VG at 1× 1018 /𝑐𝑚3 body doping.
Fig-6: Plot of IDVD curve for different VG at 1× 1015 /𝑐𝑚3 body doping.
Fig-7: Plot of IDVD curve for different VG at 1× 1016 /𝑐𝑚3 body doping.

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