AT25M01 SPI Serial EEPROM Data Sheet 20006226A
AT25M01 SPI Serial EEPROM Data Sheet 20006226A
AT25M01 SPI Serial EEPROM Data Sheet 20006226A
Features
• Serial Peripheral Interface (SPI) Compatible
• Supports SPI Modes 0 (0,0) and 3 (1,1):
– Data sheet describes mode 0 operation
• Low-Voltage Operation:
– 1.7V (VCC = 1.7V to 5.5V)
• Industrial Temperature Range: -40°C to +85°C
• 20 MHz Clock Rate (5V)
• 256‑Byte Page Mode
• Block Write Protection:
– Protect 1/4, 1/2 or entire array
• Write-Protect (WP) Pin and Write Disable Instructions for Both Hardware and Software Data
Protection
• Self-Timed Write Cycle within 5 ms Maximum
• ESD Protection > 4,000V
• High Reliability:
– Endurance: 1,000,000 write cycles
– Data retention: 100 years
• Green (Lead-free/Halide-free/RoHS Compliant) Package Options
• Die Sale Options: Wafer Form and Bumped Wafers
Packages
• 8-Lead SOIC, 8-Lead SOIJ and 8-Ball WLCSP
Table of Contents
Features.......................................................................................................................... 1
Packages.........................................................................................................................1
2. Pin Description.......................................................................................................... 5
2.1. Chip Select (CS)...........................................................................................................................5
2.2. Serial Data Output (SO)............................................................................................................... 5
2.3. Write-Protect (WP)....................................................................................................................... 5
2.4. Ground (GND).............................................................................................................................. 5
2.5. Serial Data Input (SI)....................................................................................................................6
2.6. Serial Data Clock (SCK)...............................................................................................................6
2.7. Suspend Serial Input (HOLD).......................................................................................................6
2.8. Device Power Supply (VCC)......................................................................................................... 6
3. Description.................................................................................................................7
3.1. SPI Bus Master Connections to Serial EEPROMs.......................................................................7
3.2. Block Diagram.............................................................................................................................. 8
4. Electrical Characteristics........................................................................................... 9
4.1. Absolute Maximum Ratings..........................................................................................................9
4.2. DC and AC Operating Range.......................................................................................................9
4.3. DC Characteristics....................................................................................................................... 9
4.4. AC Characteristics......................................................................................................................10
4.5. SPI Synchronous Data Timimg.................................................................................................. 13
4.6. Electrical Specifications..............................................................................................................13
5. Device Operation.....................................................................................................15
5.1. Interfacing the AT25M01 on the SPI Bus................................................................................... 15
5.2. Device Opcodes......................................................................................................................... 16
5.3. Hold Function............................................................................................................................. 16
5.4. Write Protection..........................................................................................................................17
7. Read Sequence.......................................................................................................23
8. Write Sequence....................................................................................................... 24
8.1. Byte Write...................................................................................................................................24
8.2. Page Write..................................................................................................................................24
8.3. Polling Routine........................................................................................................................... 25
9. Packaging Information.............................................................................................26
9.1. Package Marking Information.....................................................................................................26
Customer Support......................................................................................................... 35
Legal Notice...................................................................................................................37
Trademarks................................................................................................................... 37
CS 1 8 Vcc
SO 2 7 HOLD
WP 3 6 SCK
GND 4 5 SI
8-Ball WLCSP
(Top View)
VCC SI
SCK
HOLD WP
SO
CS GND
2. Pin Description
The descriptions of the pins are listed in Table 2-1.
Table 2-1. Pin Function Table
Name 8-Lead SOIC 8-Lead SOIJ 8-Ball WLCSP Function
CS 1 1 A5 Chip Select
SO 2 2 B4 Serial Data Output
WP(1) 3 3 C3 Write-Protect
GND 4 4 C5 Ground
SI 5 5 C1 Serial Data Input
SCK 6 6 B2 Serial Data Clock
HOLD(1) 7 7 A3 Suspends Serial Input
VCC 8 8 A1 Device Power Supply
Note:
1. The Write-Protect (WP) and Hold (HOLD) pins should be driven high or low as appropriate.
3. Description
The AT25M01 provides 1,048,576 bits of Serial Electrically Erasable and Programmable Read-Only
Memory (EEPROM) organized as 131,072 words of 8 bits each. The device is optimized for use in many
industrial and commercial applications where low‑power and low‑voltage operation are essential. The
device is available in space-saving 8‑lead SOIC, 8‑lead SOIJ and 8-ball WLCSP packages. All packages
operate from 1.7V to 5.5V.
CS Memory Power-on
System Control Reset VCC
High-Voltage Module Generator
Generation
Circuit
Register Bank:
STATUS Register
Pause
SO Operation HOLD
Control
Row Decoder
EEPROM Array
1 page
Address Register
and Counter
Column Decoder
WP SCK
Data Register
Data Output
Buffer
4. Electrical Characteristics
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operation listings of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
AT25M01
Operating Temperature (Case) Industrial Temperature Range -40°C to +85°C
VCC Power Supply Low-Voltage Grade 1.7V to 5.5V
4.3 DC Characteristics
Table 4-2. DC Characteristics(1)
...........continued
Parameter Symbol Minimum Typical Maximum Units Conditions
Standby Current ISB2 — 0.4 3.0 µA VCC = 2.5V, CS = VCC
Standby Current ISB3 — 2.0 5.0 µA VCC = 5.0V, CS = VCC
Input Leakage IIL -3.0 — 3.0 µA VIN = 0V to VCC
Output Leakage IOL -3.0 — 3.0 µA VIN = 0V to VCC,
TA = 0°C to +70°C
Note:
1. Applicable over recommended operating range from: TA = -40°C to +85°C, VCC = 1.7V to 5.5V
(unless otherwise noted).
2. VIL min and VIH max are reference only and are not tested.
4.4 AC Characteristics
Table 4-3. AC Characteristics(1)
...........continued
Parameter Symbol Minimum Maximum Units Conditions
Input Fall Time tFI — 15 ns VCC = 4.5V to 5.5V
— 40 ns VCC = 2.5V to 5.5V
— 80 ns VCC = 1.7V to 5.5V
SCK High Time tWH 20 — ns VCC = 4.5V to 5.5V
40 — ns VCC = 2.5V to 5.5V
80 — ns VCC = 1.7V to 5.5V
SCK Low Time tWL 20 — ns VCC = 4.5V to 5.5V
40 — ns VCC = 2.5V to 5.5V
80 — ns VCC = 1.7V to 5.5V
CS High Time tCS 100 — ns VCC = 4.5V to 5.5V
100 — ns VCC = 2.5V to 5.5V
200 — ns VCC = 1.7V to 5.5V
CS Setup Time tCSS 100 — ns VCC = 4.5V to 5.5V
100 — ns VCC = 2.5V to 5.5V
200 — ns VCC = 1.7V to 5.5V
CS Hold Time tCSH 100 — ns VCC = 4.5V to 5.5V
100 — ns VCC = 2.5V to 5.5V
200 — ns VCC = 1.7V to 5.5V
Data In Setup Time tSU 5 — ns VCC = 4.5V to 5.5V
10 — ns VCC = 2.5V to 5.5V
20 — ns VCC = 1.7V to 5.5V
Data In Hold Time tH 5 — ns VCC = 4.5V to 5.5V
10 — ns VCC = 2.5V to 5.5V
20 — ns VCC = 1.7V to 5.5V
HOLD Setup Time tHD 5 — ns VCC = 4.5V to 5.5V
10 — ns VCC = 2.5V to 5.5V
20 — ns VCC = 1.7V to 5.5V
HOLD Hold Time tCD 5 — ns VCC = 4.5V to 5.5V
10 — ns VCC = 2.5V to 5.5V
20 — ns VCC = 1.7V to 5.5V
...........continued
Parameter Symbol Minimum Maximum Units Conditions
Output Valid tV 0 20 ns VCC = 4.5V to 5.5V
0 40 ns VCC = 2.5V to 5.5V
0 80 ns VCC = 1.7V to 5.5V
Output Hold Time tHO 0 — ns VCC = 4.5V to 5.5V
0 — ns VCC = 2.5V to 5.5V
0 — ns VCC = 1.7V to 5.5V
HOLD to Output Low Z tLZ 0 25 ns VCC = 4.5V to 5.5V
0 50 ns VCC = 2.5V to 5.5V
0 100 ns VCC = 1.7V to 5.5V
HOLD to Output High Z tHZ — 25 ns VCC = 4.5V to 5.5V
— 50 ns VCC = 2.5V to 5.5V
— 100 ns VCC = 1.7V to 5.5V
Output Disable Time tDIS — 25 ns VCC = 4.5V to 5.5V
— 50 ns VCC = 2.5V to 5.5V
— 100 ns VCC = 1.7V to 5.5V
Write Cycle Time tWC — 5 ms VCC = 4.5V to 5.5V
— 5 ms VCC = 2.5V to 5.5V
— 5 ms VCC = 1.7V to 5.5V
Note:
1. Applicable over recommended operating range from TA = -40°C to +85°C, VCC = As Specified,
CL = 1 TTL Gate and 30 pF (unless otherwise noted).
CS
VIL
tCSS tCSH
VIH
tWH tWL
SCK
VIL
tSU tH
VIH
SI Valid Data In
VIL
tV tHO tDIS
VOH
High High
SO Impedance Impedance
VOL
Note:
1. These parameters are characterized but they are not 100% tested in production.
If an event occurs in the system where the VCC level supplied to the AT25M01 drops below the maximum
VPOR level specified, it is recommended that a full-power cycle sequence be performed by first driving the
VCC pin to GND in less than 1 ms, waiting at least the minimum tPOFF time and then performing a new
power-up sequence in compliance with the requirements defined in this section.
Note:
1. This parameter is characterized but is not 100% tested in production.
2. Applicable over recommended operating range from: TA = 25°C, fSCK = 1.0 MHz, VCC = 5.0V
(unless otherwise noted).
4.6.1.3 EEPROM Cell Performance Characteristics
Table 4-6. EEPROM Cell Performance Characteristics
Note:
1. Performance is determined through characterization and the qualification process.
4.6.1.4 Software Reset
The SPI interface of the AT25M01 can be reset by toggling the CS input. If the CS line is already in the
active state, it must complete a transition from the inactive state (≥VIH) to the active state (≤VIL) and then
back to the inactive state (≥VIH) without sending clocks on the SCK line. Upon completion of this
sequence, the device will be ready to receive a new opcode on the SI line.
4.6.1.5 Device Default State at Power-Up
The AT25M01 default state upon power-up consists of:
• Standby Power mode
• A high-to-low-level transition on CS is required to enter active state
• Write Enable Latch (WEL) bit in the STATUS register = 0
• Ready/Busy bit in the STATUS register = 0, indicating the device is ready to accept a new command
• Device is not selected
• Not in Hold condition
• WPEN, BP1 and BP0 bits in the STATUS register are unchanged from their previous state due to the
fact that they are nonvolatile values
4.6.1.6 Device Default Condition
The AT25M01 is shipped from Microchip to the customer with the EEPROM array set to an all FFh data
pattern (logic ‘1’ state). The Write-Protect Enable bit in the STATUS register is set to logic ‘0’ and the
Block Write‑Protection bits in the STATUS register are set to logic ‘0’.
5. Device Operation
The AT25M01 is controlled by a set of instructions that are sent from a host controller, commonly referred
to as the SPI Master. The SPI Master communicates with the AT25M01 via the SPI bus which is
comprised of four signal lines: Chip Select (CS), Serial Data Clock (SCK), Serial Data Input (SI) and
Serial Data Output (SO).
The SPI protocol defines a total of four modes of operation (Mode 0, 1, 2 or 3) with each mode differing in
respect to the SCK polarity and phase and how the polarity and phase control the flow of data on the SPI
bus. The AT25M01 supports the two most common modes, SPI Modes 0 and 3. With SPI Modes 0 and 3,
data is always latched in on the rising edge of SCK and always output on the falling edge of SCK. The
only difference between SPI Modes 0 and 3 is the polarity of the SCK signal when in the inactive state
(when the SPI Master is in Standby mode and not transferring any data). SPI Mode 0 is defined as a low
SCK while CS is not asserted (at VCC) and SPI Mode 3 has SCK high in the inactive state. The SCK Idle
state must match when the CS is deasserted both before and after the communication sequence in SPI
Mode 0 and 3. The figures in this document depict Mode 0 with a solid line on SCK while CS is inactive
and Mode 3 with a dotted line.
Figure 5-1. SPI Mode 0 and Mode 3
CS
Mode 3 Mode 3
SCK
Mode 0 Mode 0
SI MSB LSB
SO MSB LSB
CS
SCK
HOLD
CS
t CD t CD
SCK
t HD
HOLD
t HD
t HZ
SO
tLZ
6:4 RFU Reserved for Future Use R 0 Reads as zeros when the device is not in a write
cycle
1 Reads as ones when the device is in a write cycle
3:2 BP1 Block Write Protection R/W 00 No array write protection (Factory Default)
BP0
01 Quarter array write protection (see Table 6-4)
10 Half array write protection (see Table 6-4)
11 Entire array write protection (see Table 6-4)
1 WEL Write Enable Latch R 0 Device is not write enabled (Power-up Default)
1 Device is write enabled
...........continued
Bit Name Type Description
0 RDY/BSY Ready/Busy Status R 0 Device is ready for a new sequence
1 Device is busy with an internal operation
CS
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
SCK
SI 0 0 0 0 0 1 0 1
MSB
High-Impedance
SO D7 D6 D5 D4 D3 D2 D1 D0
MSB
CS
0 1 2 3 4 5 6 7
SCK
SI 0 0 0 0 0 1 1 0
MSB
High-Impedance
SO
CS
0 1 2 3 4 5 6 7
SCK
SI 0 0 0 0 0 1 0 0
MSB
High-Impedance
SO
The AT25M01 will not respond to commands other than a RDSR after a WRSR instruction until
the self‑timed internal write cycle has completed. When the write cycle is completed, the WEL bit in the
STATUS register is reset to logic ‘0’.
Figure 6-4. WRSR Waveform
CS tWC(1)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
SCK
SI 0 0 0 0 0 0 0 1 D7 X X X D3 D2 X X
MSB MSB
High-Impedance
SO
Note:
1. This instruction initiates a self-timed internal write cycle (tWC) on the rising edge of CS after a valid
sequence.
7. Read Sequence
Reading the AT25M01 via the SO pin requires the following sequence. After the CS line is pulled low to
select a device, the READ (03h) instruction is transmitted via the SI line followed by the 24‑bit address to
be read. Refer to Table 7-1 for the address bits for AT25M01.
Table 7-1. AT25M01 Address Bits
Address AT25M01
AN A16—A0
Don't Care Bits A23—A17
Upon completion of the 24‑bit address, any data on the SI line will be ignored. The data (D7‑D0) at the
specified address is then shifted out onto the SO line. If only one byte is to be read, the CS line should be
driven high after the data comes out. The read sequence can be continued since the byte address is
automatically incremented and data will continue to be shifted out. When the highest‑order address bit is
reached, the address counter will rollover to the lowest‑order address bit allowing the entire memory to be
read in one continuous read cycle regardless of the starting address.
Figure 7-1. Read Waveform
CS
0 1 2 3 4 5 6 7 8 9 10 11 12 28 29 31 32 33 34 35 36 37 38 39 40 41
SCK
SI 0 0 0 0 0 0 1 1 A A A A A A A A A
MSB MSB
Data Byte 1
High-Impedance
SO D D D D D D D D D D
MSB MSB
8. Write Sequence
In order to program the AT25M01, two separate instructions must be executed. First, the device must be
write enabled via the Write Enable (WREN) instruction. Then, one of the two possible write sequences
described in this section may be executed.
Note: If the device is not Write Enabled (WREN), the device will ignore the WRITE instruction and will
return to the standby state when CS is brought high. A new CS assertion is required to re-initiate
communication.
The address of the memory location(s) to be programmed must be outside the protected address field
location selected by the block write protection level. During an internal write cycle, all commands will be
ignored except the RDSR instruction. Refer to Table 8-1 for the address bits for AT25M01.
Table 8-1. AT25M01 Address Bits
Address AT25M01
AN A16—A0
Don’t Care Bits A23—A17
CS tWC(1)
0 1 2 3 4 5 6 7 8 9 10 11 12 28 29 31 32 33 34 35 36 37 38 39
SCK
SI 0 0 0 0 0 0 1 0 A A A A A A A A A D7 D6 D5 D4 D3 D2 D1 D0
MSB MSB MSB
High-Impedance
SO
Note:
1. This instruction initiates a self-timed internal write cycle (tWC) on the rising edge of CS after a valid
sequence.
following the receipt of each data byte. The higher order address bits are not incremented and retain the
memory array page location. If more bytes of data are transmitted that what will fit to the end of that
memory row, the address counter will rollover to the beginning of the same row. Nevertheless, creating a
rollover event should be avoided as previously loaded data in the page could become unintentionally
altered. The AT25M01 is automatically returned to the Write Disable state (WEL = 0) at the completion of
a write cycle.
Figure 8-2. Page Write
CS tWC(1)
0 1 2 3 4 5 6 7 8 9 29 30 31 32 33 34 35 36 37 38 39
SCK
WRITE Opcode (02h) Address Bits A23-A0 Data In Byte 1 Data In Byte 256
SI 0 0 0 0 0 0 1 0 A A A A A A D D D D D D D D D D D D D D D D
MSB MSB MSB MSB
High-Impedance
SO
Note:
1. This instruction initiates a self‑timed internal write cycle (tWC) on the rising edge of CS after a valid
sequence.
9. Packaging Information
ATMLHYWW
ATMLHYWW ## % CO ATMEL
## % CO YYWWNNN ## %
YYWWNNN
UWNNN
8-Lead Plastic Small Outline (SN) - Narrow, 3.90 mm (.150 In.) Body [SOIC]
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2X
0.10 C A–B
D
A D
NOTE 5
N
E
2
E1
2
E1 E
NOTE 1 1 2
e NX b
B 0.25 C A–B D
NOTE 5
TOP VIEW
0.10 C
C A A2
SEATING
PLANE 8X
0.10 C
A1 SIDE VIEW
h
R0.13
h
R0.13
H 0.23
L
SEE VIEW C
(L1)
VIEW A–A
VIEW C
Microchip Technology Drawing No. C04-057-SN Rev E Sheet 1 of 2
8-Lead Plastic Small Outline (SN) - Narrow, 3.90 mm (.150 In.) Body [SOIC]
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units MILLIMETERS
Dimension Limits MIN NOM MAX
Number of Pins N 8
Pitch e 1.27 BSC
Overall Height A - - 1.75
Molded Package Thickness A2 1.25 - -
Standoff § A1 0.10 - 0.25
Overall Width E 6.00 BSC
Molded Package Width E1 3.90 BSC
Overall Length D 4.90 BSC
Chamfer (Optional) h 0.25 - 0.50
Foot Length L 0.40 - 1.27
Footprint L1 1.04 REF
Foot Angle 0° - 8°
Lead Thickness c 0.17 - 0.25
Lead Width b 0.31 - 0.51
Mold Draft Angle Top 5° - 15°
Mold Draft Angle Bottom 5° - 15°
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. § Significant Characteristic
3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or
protrusions shall not exceed 0.15mm per side.
4. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
5. Datums A & B to be determined at Datum H.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
SILK SCREEN
Y1
X1
E
Units MILLIMETERS
Dimension Limits MIN NOM MAX
Contact Pitch E 1.27 BSC
Contact Pad Spacing C 5.40
Contact Pad Width (X8) X1 0.60
Contact Pad Length (X8) Y1 1.55
Notes:
1. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Pin 1 A1
1 2 3 4 5 Øb
5 4 3 2 1
Pin 1
A A
B E B e
C C
A2 e2
d2
d
A
Note: Dimensions are not to scale
COMMON DIMENSIONS
PIN ASSIGNMENT MATRIX
(Unit of Measure = mm)
07/19/2015
TITLE GPC DRAWING NO. REV.
8U-7, 8-ball (5x3 Array) Wafer Level Chip-Scale
Package (WLCSP)
GXG 8U-7 D
Note: For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging.
Customer Support
Users of Microchip products can receive assistance through several channels:
• Distributor or Representative
• Local Sales Office
• Embedded Solutions Engineer (ESE)
• Technical Support
Customers should contact their distributor, representative or ESE for support. Local sales offices are also
available to help customers. A listing of sales offices and locations is included in this document.
Technical support is available through the web site at: http://www.microchip.com/support
AT 25M01 -S S H M-B
Package Option
SS = SOIC
S = SOIJ
U = WLCSP
WWU = Wafer Unsawn
Examples:
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