DJT4031N

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

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Features Mechanical Data

• Ideally Suited for Automated Assembly Processes • Case: SOT-223
• Complementary PNP Type Available (DJT4030P) • Case Material: Molded Plastic, "Green” Molding Compound.
• Low Collector-Emitter Saturation Voltage UL Flammability Classification Rating 94V-0
• Ideal for Medium Power Switching or Amplification Applications • Moisture Sensitivity: Level 1 per J-STD-020D
NEW PRODUCT

• Lead Free By Design/RoHS Compliant (Note 1) • Terminals: Finish — Matte Tin annealed over Copper leadframe
• "Green" Device (Note 2) (Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.115 grams (approximate)

COLLECTOR
2,4 3 E

C 4 2 C
1
BASE
3
1 B
EMITTER
Top View Device Schematic Pin Out Configuration

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Peak Pulse Current ICM 5 A
Continuous Collector Current IC 3 A
Base Current IB 1 A

Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD 1.2 W
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C RθJA 104 °C/W
Power Dissipation (Note 4) @ TA = 25°C PD 2 W
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C RθJA 62.5 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch2 copper pad layout.

DJT4031N 1 of 5 March 2009

Document number: DS31603 Rev. 2 - 2 www.diodes.com © Diodes Incorporated
 DJT4031N

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Conditions

OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage V(BR)CBO 40 ⎯ ⎯ V IC = 100μA
Collector-Emitter Breakdown Voltage V(BR)CEO 40 ⎯ ⎯ V IC = 10mA
Emitter-Base Breakdown Voltage V(BR)EBO 6 ⎯ ⎯ V IE = 50μA
⎯ ⎯ 100 nA VCB = 40V, IE = 0
NEW PRODUCT

Collector-Base Cutoff Current ICBO

⎯ ⎯ 50 μA VCB = 40V, IE = 0, TA = 150°C
Emitter-Base Cutoff Current IEBO ⎯ ⎯ 100 nA VEB = 6V, IC = 0
ON CHARACTERISTICS (Note 4)
220 ⎯ ⎯ VCE = 1V, IC = 0.5A
DC Current Gain hFE 200 ⎯ 500 ⎯ VCE = 1V, IC = 1A
100 ⎯ ⎯ VCE = 1V, IC = 3A
⎯ ⎯ 100 IC = 0.5A, IB = 5mA
Collector-Emitter Saturation Voltage VCE(SAT) ⎯ ⎯ 150 mV IC = 1A, IB = 10mA
⎯ ⎯ 300 IC = 3A, IB = 0.3A
Equivalent On-Resistance RCE(SAT) ⎯ ⎯ 100 mΩ IE = 3A, IB = 0.3A
Base-Emitter Saturation Voltage VBE(SAT) ⎯ ⎯ 1.0 V IC = 1A, IB = 0.1A
Base-Emitter Turn-on Voltage VBE(ON) ⎯ ⎯ 1.0 V VCE = 2V, IC = 1A
SMALL SIGNAL CHARACTERISTICS
VCE = 10V, IC = 100mA,
Transition Frequency fT ⎯ 105 ⎯ MHz
f = 100MHz
Output Capacitance Cobo ⎯ 27 ⎯ pF VCB = 10V, f = 1MHz
Input Capacitance CIbo ⎯ 180 ⎯ pF VCB = 5V, f = 1MHz
SWITCHING CHARACTERISTICS
Turn-On Time ton ⎯ 45 ⎯ ns
VCC = 10V, IC = 2A,
Delay Time td ⎯ 14 ⎯ ns
IB1 = 200mA
Rise Time tr ⎯ 31 ⎯ ns
Turn-Off Time toff ⎯ 276 ⎯ ns
VCC = 10V, IC = 2A,
Storage Time ts ⎯ 244 ⎯ ns
IB1 = IB2 = 200mA
Fall Time tf ⎯ 32 ⎯ ns
Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

2.0 10

Pw = 1ms
IC, COLLECTOR CURRENT (A)

1.6
PD, POWER DISSIPATION (W)

1
DC Pw = 100ms
1.2 (Note 4)

Pw = 10ms

0.8

(Note 3) 0.10

0.4

0 0.01
0 25 50 75 100 125 150 0.1 1 10 100
TA, AMBIENT TEMPERATURE (°C) VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 1 Power Dissipation vs. Ambient Temperature Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage (Note 3)

DJT4031N 2 of 5 March 2009

Document number: DS31603 Rev. 2 - 2 www.diodes.com © Diodes Incorporated
 DJT4031N

600 1

VCE = 1V IC/IB = 10

500

VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
TA = 150°C
hFE, DC CURRENT GAIN

400 0.1
T A = 85°C TA = 150°C
NEW PRODUCT

T A = 85°C
300
T A = 25°C

TA = 25°C
200 0.01
TA = -55°C
T A = -55°C

100

0 0.001
1 10 100 1,000 10,000 1 10 100 1,000 10,000
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current

VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)

1.2 1.2
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)

VCE = 1V
1.0 1.0 IC/IB = 10

0.8 0.8

T A = -55°C TA = -55°C

0.6 0.6
TA = 25°C
T A = 25°C
0.4 0.4
TA = 85°C
T A = 85°C

0.2 0.2 T A = 150°C

TA = 150°C

0 0
0.1 1 10 100 1,000 0.1 1 10 100 1,000 10,000
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical Base-Emitter Turn-On Voltage Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current vs. Collector Current

1,000
f = 1MHz
CAPACITANCE (pF)

Cibo

100

Cobo

10
0.1 1 10 100
VR, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics

DJT4031N 3 of 5 March 2009

Document number: DS31603 Rev. 2 - 2 www.diodes.com © Diodes Incorporated
 DJT4031N

r(t), TRANSIENT THERMAL RESISTANCE

D = 0.7
D = 0.5

D = 0.3

0.1
D = 0.1
NEW PRODUCT

D = 0.05 RθJA(t) = r(t) * RθJA

D = 0.9
RθJA = 101°C/W

D = 0.02
P(pk)
0.01 t1
D = 0.01
t2
TJ - TA = P * RθJA(t)
D = 0.005
Duty Cycle, D = t1/t2

D = Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000
t1, PULSE DURATION TIME (s)
Fig. 8 Transient Thermal Response (Note 3)

Ordering Information (Note 5)

Part Number Case Packaging

DJT4031N-13 SOT-223 2500/Tape & Reel
Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

ZNS34 = Product Type Marking Code

YWW YWW = Date Code Marking
ZNS34 Y = Last digit of year (ex: 8 = 2008)
WW = Week code 01 - 52

Package Outline Dimensions

SOT-223
Dim Min Max Typ
A 1.55 1.65 1.60
A1 0.010 0.15 0.05
b1 2.90 3.10 3.00
b2 0.60 0.80 0.70
C 0.20 0.30 0.25
D 6.45 6.55 6.50
E 3.45 3.55 3.50
E1 6.90 7.10 7.00
e — — 4.60
e1 — — 2.30
L 0.85 1.05 0.95
A Q 0.84 0.94 0.89
All Dimensions in mm
A1

DJT4031N 4 of 5 March 2009

Document number: DS31603 Rev. 2 - 2 www.diodes.com © Diodes Incorporated
 DJT4031N

Suggested Pad Layout

X1

Y1 Dimensions Value (in mm)

X1 3.3
X2 1.2
NEW PRODUCT

C1 Y1 1.6
Y2 1.6
C1 6.4
Y2 C2 2.3
C2
X2

IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.

DJT4031N 5 of 5 March 2009

Document number: DS31603 Rev. 2 - 2 www.diodes.com © Diodes Incorporated