DXT751

LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

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Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (DXT651)
• Ideally Suited for Automated Assembly Processes
•
NEW PRODUCT

Ideal for Medium Power Switching or Amplification Applications

• Lead Free By Design/RoHS Compliant (Note 1)
SOT89-3L
• "Green" Device (Note 2)
COLLECTOR
Mechanical Data 2,4
3 E
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound. C 4 2 C 1
UL Flammability Classification Rating 94V-0 BASE
• Moisture Sensitivity: Level 1 per J-STD-020C 1 B 3
• Terminals: Finish — Matte Tin annealed over Copper leadframe EMITTER
(Lead Free Plating). Solderable per MIL-STD-202, Method 208 TOP VIEW
Schematic and Pin Configuration
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072 grams (approximate)

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage VCBO -80 V
Collector-Emitter Voltage VCEO -60 V
Emitter-Base Voltage VEBO -5 V
Continuous Collector Current IC -3 A
Peak Pulse Collector Current ICM -6 A

Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD 1 W
Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C RθJA 125 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

DS31185 Rev. 3 - 2 1 of 4 DXT751

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 Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Conditions

OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage V(BR)CBO -80 ⎯ ⎯ V IC = -100μA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO -60 ⎯ ⎯ V IC = -10mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO -5 ⎯ ⎯ V IE = -100μA, IC = 0
-0.1 μA VCB = -60V, IE = 0
Collector Cutoff Current ICBO ⎯ ⎯
NEW PRODUCT

-10 μA VCB = -60V, IE = 0, TA = 100°C

Emitter Cutoff Current IEBO ⎯ ⎯ -0.1 μA VEB = -4V, IC = 0
ON CHARACTERISTICS (Note 4)
⎯ -0.08 -0.3 IC = -1A, IB = -100mA
Collector-Emitter Saturation Voltage VCE(SAT) V
⎯ -0.2 -0.6 IC = -3A, IB = -300mA
Base-Emitter Saturation Voltage VBE(SAT) ⎯ -0.9 -1.25 V IC = -1A, IB = -100mA
Base-Emitter Turn-On Voltage VBE(ON) ⎯ -0.8 -1 V VCE = -2V, IC = -1A
70 200 ⎯ VCE = -2V, IC = -50mA
100 180 300 VCE = -2V, IC = -500mA
DC Current Gain hFE ⎯
80 160 ⎯ VCE = -2V, IC = -1A
40 140 ⎯ VCE = -2V, IC = -2A
AC CHARACTERISTICS
Transition Frequency fT 100 145 ⎯ MHz VCE = -10V, IC = -50mA, f = 100MHz
Output Capacitance Cobo ⎯ ⎯ 30 pF VCB = -10V, f = 1MHz
ton ⎯ 45 ⎯ ns IC = -500mA, VCC = -10V
Switching Times
toff ⎯ 200 ⎯ ns IB1 = IB2 = -50mA
Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

1.0
PD, POWER DISSIPATION (W)

0.8

0.6

0.4

0.2

0
0 25 50 75 100 125 150 0 1 2 3 4 5
TA, AMBIENT TEMPERATURE (°C) -VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 1 Power Dissipation Fig. 2 Typical Collector Current
vs. Ambient Temperature (Note 3) vs. Collector-Emitter Voltage

DS31185 Rev. 3 - 2 2 of 4 DXT751

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 400 0.3

350
0.25
300
0.2
250
NEW PRODUCT

200 0.15

150
0.1
100
0.05
50

0 0

-IC, COLLECTOR CURRENT (A) -IC, COLLECTOR CURRENT (A)

Fig. 3 Typical DC Current Gain Fig. 4 Typical Collector-Emitter Saturation
vs. Collector Current Voltage vs. Collector Current

1
-IC, COLLECTOR CURRENT (A) -IC, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Turn-On Voltage Fig. 6 Typical Base-Emitter Saturation
vs. Collector Current Voltage vs. Collector Current

400 200
fT, CURRENT GAIN-BANDWIDTH PRODUCT (MHz)

350

300 150

250

200 100

150

VCE = -10V
100 50 f = 100MHz

50

0 0
0 10 20 30 40 50 60 70 80 90 100
-IC, COLLECTOR CURRENT (mA)
VR , REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current

DS31185 Rev. 3 - 2 3 of 4 DXT751

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 Ordering Information (Note 5)
Device Packaging Shipping
DXT751-13 SOT89-3L 2500/Tape & Reel
Notes: 5. For packaging details, go to our website at http://www.diodes.com/ap02007.pdf.

Marking Information
NEW PRODUCT

(Top View)

KP2 = Product Type Marking Code

YWW YWW = Date Code Marking
KP2 Y = Last digit of year ex: 7 = 2007
WW = Week code 01 - 52

Package Outline Dimensions

0
20
D1 0.
R C SOT89-3L
Dim Min Max Typ
A 1.40 1.60 1.50
B 0.45 0.55 0.50
E
H B1 0.37 0.47 0.42
C 0.35 0.43 0.38
B L D 4.40 4.60 4.50
e
D1 1.50 1.70 1.60
B1
8°
(4X E 2.40 2.60 2.50
)
e — — 1.50
A H 3.95 4.25 4.10
L 0.90 1.20 1.05
All Dimensions in mm
D

Suggested Pad Layout

1.7

2.7

0.4

1.9
1.3

0.9
3.0
Unit: mm

IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.

DS31185 Rev. 3 - 2 4 of 4 DXT751

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