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    Digital Circuits and Systems EENG14000 - SOLUTIONS - C: University of Bristol - Faculty of Engineering May/June 2009

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    This document contains solutions to practice questions about digital circuits and systems from the University of Bristol's Faculty of Engineering. The questions cover topics like transistor symbols, MOSFET characteristics, transistor biasing, and transistor circuit analysis. Full solutions are provided for a multistage transistor circuit analysis question involving determining voltages, currents, and bias conditions.

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    Digital Circuits and Systems EENG14000 - SOLUTIONS - C: University of Bristol - Faculty of Engineering May/June 2009

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    22 views2 pages
    This document contains solutions to practice questions about digital circuits and systems from the University of Bristol's Faculty of Engineering. The questions cover topics like transistor symbols, MOSFET characteristics, transistor biasing, and transistor circuit analysis. Full solutions are provided for a multistage transistor circuit analysis question involving determining voltages, currents, and bias conditions.

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    2008-9-A2

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    This document contains solutions to practice questions about digital circuits and systems from the University of Bristol's Faculty of Engineering. The questions cover topics like transistor symbols, MOSFET characteristics, transistor biasing, and transistor circuit analysis. Full solutions are provided for a multistage transistor circuit analysis question involving determining voltages, currents, and bias conditions.

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    22 views2 pages

    Digital Circuits and Systems EENG14000 - SOLUTIONS - C: University of Bristol - Faculty of Engineering May/June 2009

    Uploaded by

    栾子璇
    This document contains solutions to practice questions about digital circuits and systems from the University of Bristol's Faculty of Engineering. The questions cover topics like transistor symbols, MOSFET characteristics, transistor biasing, and transistor circuit analysis. Full solutions are provided for a multistage transistor circuit analysis question involving determining voltages, currents, and bias conditions.

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    UNIVERSITY OF BRISTOL - FACULTY OF ENGINEERING

    May/June 2009

    Digital Circuits and Systems EENG14000 - SOLUTIONS - C

    QC1 (1 mark)
    Draw symbol here c
    b
    e
    n-p-n BJT – n-p-n is enough BJT alone is not.

    QC2 (2 marks)

    10

    iD
    mA

    0
    -1 0.0 vD volts 1.0

    QC3 (2 marks)
    vGS = Vt + 3.8V
    Full marks will be awarded vGS =Vt+5.0V
    vGS =Vt +4.6V
    for correctly identifying the 5mA vGS =Vt+4.2V

    regions. It is not necessary to iD


    vGS = Vt + 3.4V
    define the voltages. 4mA vDS = vGS - Vt
    The equation for the dotted vDS ≤ vGS - Vt vGS = Vt + 3.0V

    line is expected as shown. 3mA Triode region


    vGS = Vt + 2.6V

    2mA vDS ≥ vGS - Vt vGS = Vt + 2.2V


    Saturation region
    vGS = Vt + 1.8V
    1mA
    vGS = Vt + 1.4V
    vGS = Vt + 1.0V
    vGS = Vt + 0.6V
    0mA
    0V 1V 2V 3V 4V vDS 5V
    vGS ≤ Vt Cut-off region
    QC4 (3 mark)
    (b) Reversed biased - anode negative with respect to cathode -5V.
    (c) Forward biased - anode about 0.7V positive with respect to the cathode.

    QC5 (3 mark)
    ≈2V (Vt + 2)V 0V
    Drain metal contact (i)
    D G S

    p-type substrate (ii) n+ n+

    iD
    n-type source region (iii) induced n-type channel
    n-type MOSFET (iv)

    QC6 (4 marks)
    F2 = (P + R.S)' or (P'.(R' + S'))

    QC7 (10 marks)


    Analysis for a p-n-p transistor with VBEon = 0.7V, VCEsat = 0.3V and +3V
    iE = iB + iC
    β = 100. RC =10000 RE =1000 RB = 7500 1k0
    vE = Vx
    As the device is in saturation we know that the blob of solder iE = (3 - Vx)/1k0
    model holds and so to a first approximation vE=vB=vC=Vx. e ON
    iB = Vx /7k5
    +0V Q2 Linear
    So iE = (3-Vx)/RE; iC = (Vx -(-15))/RC; Vx/RB; and iE = iC + iB; 7k5 vB = Vx b
    c
    (3-Vx)/RE = (Vx + 15))/RC + Vx/RB so vC = Vx iC = (Vx +15)/10k
    RCRB(3-Vx)=RERB(Vx+15)+RERC Vx 10k

    3RCRB - 15RERB = (RERB + RERC +RCRB)Vx -15V

    Vx = (3RCRB - 15RERB)/(RERB + RERC +RCRB) = 1.22V. The voltage must be between 0 and 3V and not
    negative for the transistor to be on. All three terminals are at the same voltage in the “blob of solder”
    model. The current are: iE = 1.78 mA; iC =1.62 mA; 0.163 mA;
    The forced beta under these conditions is iC /iB = 10.13 so the transistor is well into saturation.
    The value of RB that just creates the onset of saturation or linear operation is for iB = 16.20 µA;
    Therefore RB = Vx /iB = 75308.64 or 75k.

    vC = 1.22 V vB = 1.22 V vE = 1.22 V

    iC = 1.62 mA iB = 0.163 mA iE = 1.78 mA

    βforced = 10.1 RB = 75k

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