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    Nte 22

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    Remy Mendoza
    The document describes an NTE22 silicon NPN transistor for general purpose amplifier and driver applications. It has a high breakdown voltage of 80V, can handle continuous currents of 1A and pulsed currents of 2A, and is suitable for medium power output stages and high-voltage drivers. The document provides the transistor's maximum ratings and typical electrical characteristics.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Nte 22

    Uploaded by

    Remy Mendoza
    48 views2 pages
    The document describes an NTE22 silicon NPN transistor for general purpose amplifier and driver applications. It has a high breakdown voltage of 80V, can handle continuous currents of 1A and pulsed currents of 2A, and is suitable for medium power output stages and high-voltage drivers. The document provides the transistor's maximum ratings and typical electrical characteristics.

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    nte22

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    The document describes an NTE22 silicon NPN transistor for general purpose amplifier and driver applications. It has a high breakdown voltage of 80V, can handle continuous currents of 1A and pulsed currents of 2A, and is suitable for medium power output stages and high-voltage drivers. The document provides the transistor's maximum ratings and typical electrical characteristics.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    48 views2 pages

    Nte 22

    Uploaded by

    Remy Mendoza
    The document describes an NTE22 silicon NPN transistor for general purpose amplifier and driver applications. It has a high breakdown voltage of 80V, can handle continuous currents of 1A and pulsed currents of 2A, and is suitable for medium power output stages and high-voltage drivers. The document provides the transistor's maximum ratings and typical electrical characteristics.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    NTE22

    Silicon NPN Transistor


    AF PO, General Purpose Amp, Driver
    Features:
    D High Breakdown Voltage: VCEO = 80V
    D Large IC Capacity: IC = 1A DC
    D Good hFE Linearity
    D Low Collector Saturation Voltage
    Applications:
    D Medium Power Output Stages
    D High–Voltage Drivers
    Absolute Maximum Ratings:
    Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
    Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
    Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
    Collector Current, IC
    Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
    Pulse (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
    Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900mW
    Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +135°C
    Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
    Note 1. PW = 20ms, Duty Cycle = 1/2
    Electrical Characteristics: (TA = +25°C unless otherwise specified)
    Parameter Symbol Test Conditions Min Typ Max Unit
    Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA 80 – – V
    Collector–Base Breakdown Voltage V(BR)CBO IC = 50µA 100 – – V
    Emitter–Base Breakdown Voltage V(BR)EBO IE = 50µA 5 – – V
    Collector Cutoff Current ICBO VCB = 80V – – 1 µA
    Emitter Cutoff Current IEBO VEB = 4V – – 1 µA
    DC Current Gain hFE VCE = 3V, IC = 50mA 120 – 270
    Collector Saturation Voltage VCE(sat) IC = 500A, IB = 50mA – 0.15 0.4 V
    Transition Frequency fT VCE = 10V, IC = 50mA – 100 – MHz
    Output Capacitance Cob VCB = 10V, f = 1MHz – 20 – pF
    .102 (2.6) .280 (7.11)

    E C B .185 (4.7)

    .100 (2.54) .138 (3.5)

    .051 (1.29) .022 (0.55)

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