STF3NK80Z

Datasheet

N-channel 800 V, 3.6 Ω typ., 2.5 A SuperMESH Power MOSFET

in a TO-220FP package

Features

Order code VDS RDS(on) max. ID

STF3NK80Z 800 V 4.5 Ω 2.5 A

2
3 • 100% avalanche tested
1
• Gate charge minimized
TO-220FP • Very low intrinsic capacitance
D(2) • Zener-protected

Applications

G(1) • Switching applications

Description
This high-voltage device is a Zener-protected N-channel Power MOSFET developed
S(3) AM15572v1_no_tab using the SuperMESH technology by STMicroelectronics, an optimization of the well-
established PowerMESH. In addition to a significant reduction in on-resistance, this
device is designed to ensure a high level of dv/dt capability for the most demanding
applications.

Product status link

STF3NK80Z

Product summary

Order code STF3NK80Z

Marking F3NK80Z
Package TO-220FP
Packing Tube

DS14366 - Rev 1 - June 2023 www.st.com

For further information contact your local STMicroelectronics sales office.
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Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage 800 V

VGS Gate-source voltage ±30 V

Drain current (continuous) at TC = 25 °C 2.5

ID(1) A
Drain current (continuous) at TC = 100 °C 1.57

IDM(1)(2) Drain current (pulsed) 10 A

PTOT Total power dissipation at TC = 25 °C 25 W

ESD Gate-source, human body model (R = 1.5 kΩ, C = 100 pF) 2 kV

dv/dt(3) Peak diode recovery voltage slope 4.5 V/ns

Insulation withstand voltage (RMS) from all three leads to external heat sink
VISO 2.5 kV
(t = 1 s, TC = 25 °C)

Tstg Storage temperature range °C

-55 to 150
TJ Operating junction temperature range °C

1. This value is limited by maximum junction temperature.

2. Pulse width limited by safe operating area.
3. ISD ≤ 2.5 A, di/dt ≤ 200 A/μs, VDS (Peak) < V(BR)DSS, VDD = 640 V.

Table 2. Thermal data

Symbol Parameter Value Unit

RthJC Thermal resistance, junction-to-case 5 °C/W

RthJA Thermal resistance, junction-to-ambient 62.5 °C/W

Table 3. Avalanche characteristics

Symbol Parameter Value Unit

IAR Avalanche current, repetitive or not repetitive (pulse width is limited by TJ max.) 2.5 A

EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 170 mJ

DS14366 - Rev 1 page 2/12

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Electrical characteristics

2 Electrical characteristics

TC = 25 °C unless otherwise specified.

Table 4. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 800 V

VGS = 0 V, VDS = 800 V 1

IDSS Zero gate voltage drain current µA
VGS = 0 V, VDS = 800 V, TC = 125 °C(1) 50

IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V ±10 µA

VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 3 3.75 4.5 V

RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 1.25 A 3.6 4.5 Ω

1. Specified by design, not tested in production.

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance - 485 - pF

Coss Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz - 57 - pF

Crss Reverse transfer capacitance - 11 - pF

Coss eq(1) Equivalent output capacitance VGS = 0 V, VDS = 0 to 640 V - 22 - pF

Qg Total gate charge - 19 - nC

VDD = 640 V, ID = 2.5 A, VGS = 0 to 10 V
Qgs Gate-source charge (see Figure 14. Test circuit for gate - 3.2 - nC

Qgd charge behavior)

Gate-drain charge - 10.8 - nC

1. Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80%.

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VDD = 400 V, ID = 1.25 A, - 17 - ns

tr Rise time RG = 4.7 Ω, VGS =10 V - 27 - ns

td(off) Turn-off delay time (see Figure 13. Test circuit for resistive - 36 - ns
load switching times and
tf Fall time Figure 18. Switching time waveform) - 40 - ns

DS14366 - Rev 1 page 3/12

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Electrical characteristics

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD (1)
Source-drain current - 2.5 A

ISDM(2) Source-drain current (pulsed) - 10 A

VSD(3) Forward on voltage ISD = 2.5 A, VGS = 0 V - 1.6 V

trr Reverse recovery time ISD = 2.5 A, di/dt = 100 A/µs - 384 ns

Qrr Reverse recovery charge VDD = 50 V - 1.6 μC

(see Figure 15. Test circuit for inductive
IRRM Reverse recovery current - 8.4 A
load switching and diode recovery times)
trr Reverse recovery time ISD = 2.5 A, di/dt = 100 A/µs, - 474 ns

Qrr Reverse recovery charge VDD = 50 V , TJ = 150 °C - 2.1 μC

(see Figure 15. Test circuit for inductive
IRRM Reverse recovery current - 8.8 A
load switching and diode recovery times)

1. This value is limited by maximum junction temperature.

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
3. Pulse width is limited by safe operating area.

DS14366 - Rev 1 page 4/12

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Electrical characteristics (curves)

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance

K GC20940

10-1

Zth = k * RthJC
10-2
δ = tp / Ƭ

tp
Ƭ
10-3
10-4 10-3 10-2 10-1 100 tp (s)

Figure 3. Output characteristics Figure 4. Transfer characteristics

Figure 5. Static drain-source on-resistance Figure 6. Gate charge vs gate-source voltage

DS14366 - Rev 1 page 5/12

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Electrical characteristics (curves)

Figure 8. Normalized gate threshold voltage vs

Figure 7. Capacitance variations
temperature

Figure 9. Normalized on-resistance vs temperature Figure 10. Source-drain diode forward characteristics

Figure 11. Normalized V(BR)DSS vs temperature Figure 12. Maximum avalanche energy vs temperature

DS14366 - Rev 1 page 6/12

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Test circuits

3 Test circuits

Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior

VDD

12 V 47 kΩ
1 kΩ
100 nF
RL
2200 3.3
+ μF μF VDD
VD IG= CONST
VGS 100 Ω D.U.T.

VGS
RG D.U.T. pulse width +
2.7 kΩ
2200 VG
pulse width μF
47 kΩ

1 kΩ

AM01468v1 AM01469v1

Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit
diode recovery times

A A A
D L
fast 100 µH VD
G D.U.T. diode
S B 3.3 1000 2200 3.3
B B + µF
25 Ω D
µF + µF VDD µF VDD
ID
G D.U.T.
+ RG S

_ Vi D.U.T.

pulse width

AM01470v1
AM01471v1

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

ton toff
V(BR)DSS
td(on) tr td(off) tf
VD

90% 90%
IDM

10% VDS 10%

ID 0

VDD VDD
VGS 90%

0 10%

AM01472v1 AM01473v1

DS14366 - Rev 1 page 7/12

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Package information

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 TO-220FP type B package information

Figure 19. TO-220FP type B package outline

7012510_B_rev.14

DS14366 - Rev 1 page 8/12

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TO-220FP type B package information

Table 8. TO-220FP type B package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
B 2.50 2.70
D 2.50 2.75
E 0.45 0.70
F 0.75 1.00
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.20
G1 2.40 2.70
H 10.00 10.40
L2 16.00
L3 28.60 30.60
L4 9.80 10.60
L5 2.90 3.60
L6 15.90 16.40
L7 9.00 9.30
Dia 3.00 3.20

DS14366 - Rev 1 page 9/12

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Revision history
Table 9. Document revision history

Date Revision Changes

27-Jun-2023 1 First release. The part number STF3NK80Z was previously inserted in the DS3337.

DS14366 - Rev 1 page 10/12

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Contents

Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1 TO-220FP type B package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

DS14366 - Rev 1 page 11/12

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DS14366 - Rev 1 page 12/12