FSFR-US Series — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter

May 2010

FSFR-US Series — Fairchild Power Switch (FPS™)

for Half-Bridge Resonant Converters
Features Description
ƒ Variable Frequency Control with 50% Duty Cycle The FSFR-US series are a highly integrated power
for Half-Bridge Resonant Converter Topology switches designed for high-efficiency half-bridge
ƒ High Efficiency through Zero Voltage Switching (ZVS) resonant converters. Offering everything necessary to
ƒ Internal UniFET™s with Fast-Recovery Type build a reliable and robust resonant converter, the FSFR-
Body Diode US series simplifies designs and improves productivity,
while improving performance. The FSFR-US series
ƒ Fixed Dead Time (350ns) Optimized for MOSFETs combines power MOSFETs with fast-recovery type body
ƒ Up to 300kHz Operating Frequency diodes, a high-side gate-drive circuit, an accurate current
ƒ Auto-Restart Operation for All Protections with An controlled oscillator, frequency limit circuit, soft-start, and
External LVCC built-in protection functions. The high-side gate-drive
circuit has a common-mode noise cancellation capability,
ƒ Protection Functions: Over-Voltage Protection
which guarantees stable operation with excellent noise
(OVP), Over-Current Protection (OCP), Abnormal immunity. The fast-recovery body diode of the MOSFETs
Over-Current Protection (AOCP), Internal Thermal improves reliability against abnormal operation
Shutdown (TSD) conditions, while minimizing the effect of the reverse
recovery. Using the zero-voltage-switching (ZVS)
Applications technique dramatically reduces the switching losses and
efficiency is significantly improved. The ZVS also
ƒ PDP and LCD TVs reduces the switching noise noticeably, which allows a
small-sized Electromagnetic Interference (EMI) filter.
ƒ Desktop PCs and Servers
ƒ Adapters The FSFR-US series can be applied to various resonant
ƒ Telecom Power Supplies converter topologies such as series resonant, parallel
resonant, and LLC resonant converters.

Related Resources
AN4151 — Half-bridge LLC Resonant Converter Design
TM
using FSFR-Series Fairchild Power Switch (FPS )

Ordering Information
Operating Maximum Output Power Maximum Output
Part Number Package Junction RDS(ON_MAX) without Heatsink Power with Heatsink
(1,2) (1,2)
Temperature (VIN=350~400V) (VIN=350~400V)

FSFR2100US 0.51Ω 180W 400W

FSFR1800US 9-SIP 0.95Ω 120W 260W
FSFR1700US 1.25Ω 100W 200W
-40 to +130°C
FSFR2100USL 0.51Ω 180W 400W
9-SIP
FSFR1800USL 0.95Ω 120W 260W
L-Forming
FSFR1700USL 1.25Ω 100W 200W
Notes:
1. The junction temperature can limit the maximum output power.
2. Maximum practical continuous power in an open-frame design at 50°C ambient.

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FSFR-US Series • Rev.1.0.2
 FSFR-US Series — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter
Application Circuit Diagram

Figure 1. Typical Application Circuit (LLC Resonant Half-Bridge Converter)

Block Diagram

Figure 2. Internal Block Diagram

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FSFR-US Series • Rev.1.0.2 2
 FSFR-US Series — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter
Pin Configuration

Figure 3. Package Diagram

Pin Definitions
Pin # Name Description
1 VDL This is the drain of the high-side MOSFET, typically connected to the input DC link voltage.
This pin is for discharging the external soft-start capacitor when any protections are
2 AR triggered. When the voltage of this pin drops to 0.2, all protections are reset and the
controller starts to operate again.
This pin programs the switching frequency. Typically, an opto-coupler is connected to control
3 RT
the switching frequency for the output voltage regulation.
This pin senses the current flowing through the low-side MOSFET. Typically, negative
4 CS
voltage is applied on this pin.
5 SG This pin is the control ground.
6 PG This pin is the power ground. This pin is connected to the source of the low-side MOSFET.
7 LVCC This pin is the supply voltage of the control IC.
8 NC No connection.
9 HVCC This is the supply voltage of the high-side gate-drive circuit IC.
10 VCTR This is the drain of the low-side MOSFET. Typically, a transformer is connected to this pin.

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FSFR-US Series • Rev.1.0.2 3
 FSFR-US Series — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In
addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. TA=25°C unless otherwise specified.

Symbol Parameter Min. Max. Unit

Maximum Drain-to-Source Voltage
VDS 500 V
(VDL-VCTR and VCTR-PG)
LVCC Low-Side Supply Voltage -0.3 25.0 V
HVCC to VCTR High-Side VCC Pin to Low-Side Drain Voltage -0.3 25.0 V
HVCC High-Side Floating Supply Voltage -0.3 525.0 V
VAR Auto-Restart Pin Input Voltage -0.3 LVCC V
VCS Current Sense (CS) Pin Input Voltage -5.0 1.0 V
VRT RT Pin Input Voltage -0.3 5.0 V
dVCTR/dt Allowable Low-Side MOSFET Drain Voltage Slew Rate 50 V/ns
FSFR2100US/L 12.0
(3)
PD Total Power Dissipation FSFR1800US/L 11.7 W
FSFR1700US/L 11.6
(4)
Maximum Junction Temperature +150
TJ (4) °C
Recommended Operating Junction Temperature -40 +130
TSTG Storage Temperature Range -55 +150 °C
Notes:
3. Per MOSFET when both MOSFETs are conducting.
4. The maximum value of the recommended operating junction temperature is limited by thermal shutdown.

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FSFR-US Series • Rev.1.0.2 4
 FSFR-US Series — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter
Absolute Maximum Ratings (Continued)

Symbol Parameter Min. Max. Unit

MOSFET Section
VDGR Drain Gate Voltage (RGS=1MΩ) 500 V
VGS Gate Source (GND) Voltage ±30 V
FSFR2100US/L 32
(5)
IDM Drain Current Pulsed FSFR1800US/L 23 A
FSFR1700US/L 20
TC=25°C 10.5
FSFR2100US/L
TC=100°C 6.5
TC=25°C 7.0
ID Continuous Drain Current FSFR1800US/L A
TC=100°C 4.5
TC=25°C 6.0
FSFR1700US/L
TC=100°C 3.9
Package Section
Torque Recommended Screw Torque 5~7 kgf·cm
Notes:
5. Pulse width is limited by maximum junction temperature.

Thermal Impedance
TA=25°C unless otherwise specified.

Symbol Parameter Value Unit

FSFR2100US/L 10.44
Junction-to-Case Center Thermal Impedance
θJC FSFR1800US/L 10.68 ºC/W
(Both MOSFETs Conducting)
FSFR1700US/L 10.79

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FSFR-US Series • Rev.1.0.2 5
 FSFR-US Series — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter
Electrical Characteristics
TA=25°C unless otherwise specified.

Specifications
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
MOSFET Section
ID=200μA, TA=25°C 500
BVDSS Drain-to-Source Breakdown Voltage V
ID=200μA, TA=125°C 540
FSFR2100US/L VGS=10V, ID=6.0A 0.41 0.51
RDS(ON) On-State Resistance FSFR1800US/L VGS=10V, ID=3.0A 0.77 0.95 Ω
FSFR1700US/L VGS=10V, ID=2.0A 1.00 1.25
VGS=0V, IDiode=12.0A,
FSFR2100US/L 120
dIDiode/dt=100A/μs
Body Diode Reverse V =0V, IDiode=7.0A,
trr (6) FSFR1800US/L GS 160 ns
Recovery Time dIDiode/dt=100A/μs
VGS=0V, IDiode=6.0A,
FSFR1700US/L 160
dIDiode/dt=100A/μs
Supply Section
ILK Offset Supply Leakage Current H-VCC=VCTR=500V 50 μA
IQHVCC Quiescent HVCC Supply Current (HVCCUV+) - 0.1V 50 120 μA
IQLVCC Quiescent LVCC Supply Current (LVCCUV+) - 0.1V 100 200 μA

Operating HVCC Supply Current fOSC=100KHz 6 9 mA

IOHVCC
(RMS Value) No Switching 100 200 μA

Operating LVCC Supply Current fOSC=100KHz 7 11 mA

IOLVCC
(RMS Value) No Switching 2 4 mA
UVLO Section
LVCCUV+ LVCC Supply Under-Voltage Positive Going Threshold (LVCC Start) 11.2 12.5 13.8 V
LVCCUV- LVCC Supply Under-Voltage Negative Going Threshold (LVCC Stop) 8.90 10.0 11.1 V
LVCCUVH LVCC Supply Under-Voltage Hysteresis 2.50 V
HVCCUV+ HVCC Supply Under-Voltage Positive Going Threshold (HVCC Start) 8.2 9.2 10.2 V
HVCCUV- HVCC Supply Under-Voltage Negative Going Threshold (HVCC Stop) 7.8 8.7 9.6 V
HVCCUVH HVCC Supply Under-Voltage Hysteresis 0.5 V

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FSFR-US Series • Rev.1.0.2 6
 FSFR-US Series — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter
Electrical Characteristics (Continued)
TA=25°C unless otherwise specified.

Specifications Unit
Symbol Parameter Test Conditions
Min Typ Max
Oscillator & Feedback Section
VRT V-I Converter Threshold Voltage 1.5 2.0 2.5 V
fOSC Output Oscillation Frequency RT=5.2KΩ 94 100 106 KHz
DC Output Duty Cycle 48 50 52 %
fSS=fOSC+40kHz,
fSS Internal Soft-Start Initial Frequency 140 KHz
RT=5.2KΩ
tSS Internal Soft-Start Time 2 3 4 ms
Protection Section
VCssH Beginning Voltage to Discharge CSS 0.9 1.0 1.1 V
VCssL Beginning Voltage to Charge CSS and Restart 0.16 0.20 0.24 V
VOVP LVCC Over-Voltage Protection L-VCC > 21V 21 23 25 V
VAOCP AOCP Threshold Voltage ΔV/Δt=-0.1V/µs -1.0 -0.9 -0.8 V

(6) VCS < VAOCP;

tBAO AOCP Blanking Time 50 ns
ΔV/Δt=-0.1V/µs
VOCP OCP Threshold Voltage V/Δt=-1V/µs -0.64 -0.58 -0.52 V

(6) VCS < VOCP;

tBO OCP Blanking Time 1.0 1.5 2.0 μs
ΔV/Δt=-1V/µs
Delay Time (Low Side) Detecting from VAOCP
tDA (6) ΔV/Δt=-1V/µs 250 400 ns
to Switch Off
(6)
TSD Thermal Shutdown Temperature 120 135 150 °C
Dead-Time Control Section
(7)
DT Dead Time 350 ns
Notes:
6. This parameter, although guaranteed, is not tested in production.
7. These parameters, although guaranteed, are tested only in EDS (wafer test) process.

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FSFR-US Series • Rev.1.0.2 7
 FSFR-US Series — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter
Typical Performance Characteristics
These characteristic graphs are normalized at TA=25ºC.

1.1 1.1

1.05 1.05
Normalized at 25OC

Normalized at 25OC
1 1

0.95 0.95

0.9 0.9
-50 -25 0 25 50 75 100 -50 -25 0 25 50 75 100
Temp (OC) Temp (OC)

Figure 4. Low-Side MOSFET Duty Cycle Figure 5. Switching Frequency vs. Temperature
vs. Temperature

1.1 1.1

1.05 1.05
Normalized at 25OC
Normalized at 25OC

1 1

0.95 0.95

0.9 0.9
-50 -25 0 25 50 75 100 -50 -25 0 25 50 75 100
Temp (OC) Temp (OC)

Figure 6. High-Side VCC (HVCC) Start vs. Temperature Figure 7. High-Side VCC (HVCC) Stop vs. Temperature

1.1 1.1

1.05 1.05
Normalized at 25OC
Normalized at 25OC

1 1

0.95 0.95

0.9 0.9
-50 -25 0 25 50 75 100 -50 -25 0 25 50 75 100

Temp (OC) Temp (OC)

Figure 8. Low-Side VCC (LVCC) Start vs. Temperature Figure 9. Low-Side VCC (LVCC) Stop vs. Temperature

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FSFR-US Series • Rev.1.0.2 8
 FSFR-US Series — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter
Typical Performance Characteristics (Continued)
These characteristic graphs are normalized at TA=25ºC.

1.1 1.1

1.05 1.05
Normalized at 25OC

Normalized at 25OC
1 1

0.95 0.95

0.9 0.9
-50 -25 0 25 50 75 100 -50 -25 0 25 50 75 100
Temp (OC) Temp (OC)

Figure 10. LVCC OVP Voltage vs. Temperature Figure 11. RT Voltage vs. Temperature

1.10 1.10

1.05 1.05
Normalized at 25Ԩ

Normalized at 25Ԩ

1.00 1.00

0.95 0.95

0.90 0.90
-50 -25 0 25 50 75 100 -50 -25 0 25 50 75 100
Temp(Ԩ) Temp(Ԩ)

Figure 12. VCssL vs. Temperature Figure 13. VCssH vs. Temperature

1.1

1.05
Normalized at 25OC

0.95

0.9
-50 -25 0 25 50 75 100
Temp (OC)

Figure 14. OCP Voltage vs. Temperature

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FSFR-US Series • Rev.1.0.2 9
 FSFR-US Series — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter
Functional Description
1. Basic Operation: FSFR-US series is designed to
drive high-side and low-side MOSFETs complementarily
with 50% duty cycle. A fixed dead time of 350ns is
introduced between consecutive transitions, as shown in
Figure 15.

Figure 15. MOSFETs Gate Drive Signal

2. Internal Oscillator: FSFR-US series employs a

current-controlled oscillator, as shown in Figure 16. Figure 17. Resonant Converter Typical Gain Curve
Internally, the voltage of RT pin is regulated at 2V and the
charging / discharging current for the oscillator capacitor,
CT, is obtained by copying the current flowing out of the
RT pin (ICTC) using a current mirror. Therefore, the
switching frequency increases as ICTC increases.

FSFR-US
Figure 16. Current Controlled Oscillator Figure 18. Frequency Control Circuit

3. Frequency Setting: Figure 17 shows the typical To prevent excessive inrush current and overshoot of
voltage gain curve of a resonant converter, where the output voltage during startup, increase the voltage gain
gain is inversely proportional to the switching frequency of the resonant converter progressively. Since the
in the ZVS region. The output voltage can be regulated voltage gain of the resonant converter is inversely
by modulating the switching frequency. Figure 18 shows proportional to the switching frequency, the soft-start is
the typical circuit configuration for the RT pin, where the implemented by sweeping down the switching frequency
ISS
opto-coupler transistor is connected to the RT pin to from an initial high frequency (f ) until the output
modulate the switching frequency. voltage is established. The soft-start circuit is made by
connecting R-C series network on the RT pin, as shown
The minimum switching frequency is determined as: in Figure 18. FSFR-US series also has an internal soft-
start for 3ms to reduce the current overshoot during the
5.2k Ω
f min = × 100(kHz) (1) initial cycles, which adds 40kHz to the initial frequency of
Rmin the external soft-start circuit, as shown in Figure 19. The
Assuming the saturation voltage of opto-coupler initial frequency of the soft-start is given as:
transistor is 0.2V, the maximum switching frequency is
determined as: 5.2k Ω 5.2k Ω
f ISS = ( + ) × 100 + 40 (kHz ) (3)
Rmin RSS
5.2 k Ω 4.68k Ω
f max =( + ) × 100(kHz ) (2)
Rmin Rmax

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FSFR-US Series • Rev.1.0.2 10
 FSFR-US Series — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter
It is typical to set the initial frequency of soft-start two to For the soft-start time, ts/s it can be set as Equation (4).
three times the resonant frequency (fO) of the resonant
(a ) (b ) ( a) (b ) (a ) (b )
network.
L V CC
The soft-start time is three to four times of the RC time
constant. The RC time constant is as follows: V AR
V C ssH
V C ssL
τ = RSS • CSS (4)

ICr

t stop tS /S

(a ) P r o te ction s a r e tr igge r e d, ( b ) F S F R- U S r e sta r ts

Figure 21. Self Auto-Restart Operation

5. Protection Circuits: The FSFR-US series has several

self-protective functions, such as Over-Current Protection
(OCP), Abnormal Over-Current Protection (AOCP), Over-
Figure 19. Frequency Sweeping of Soft-Start Voltage Protection (OVP), and Thermal Shutdown (TSD).
These protections are auto-restart mode protections as
shown in Figure 22.
4. Self Auto-Restart: The FSFR-US series can restart
Once a fault condition is detected, switching is terminated
automatically even though any built-in protections are
and the MOSFETs remain off. When LVCC falls to the LVCC
triggered with external supply voltage. As can be seen in
stop voltage of 10V or AR signal is HIGH, the protection is
Figure 20 and Figure 21, once any protections are
reset. The FSFR-US resumes normal operation when
triggered, M1 switch turns on and V-I converter is
LVCC reaches the start voltage of 12.5V.
disabled. CSS starts to be discharged until VCss across
CSS drops to VCssL. Then, all protections are reset, M1
turns off, and V-I converter resumes at the same time.
The FSFR-US starts switching again with soft-start. If the
protections occur while VCss is under VCssL and VCssH
level, the switching is terminated immediately, VCss
continues to increase until reaching VCssH, then CSS is
discharged by M1.

Figure 22. Protection Blocks

5.1 Over-Current Protection (OCP): When the

sensing pin voltage drops below -0.58V, OCP is
triggered and the MOSFETs remain off. This protection
has a shutdown time delay of 1.5µs to prevent
premature shutdown during startup.
Figure 20. Internal Block of AR Pin 5.2 Abnormal Over-Current Protection (AOCP): If
the secondary rectifier diodes are shorted, large
current with extremely high di/dt can flow through the
After protections trigger, FSFR-US is disabled during the MOSFET before OCP is triggered. AOCP is triggered
stop-time, tstop, where VCss decreases and reaches to without shutdown delay when the sensing pin voltage
VCssL. The stop-time of FSFR-US can be estimated as: drops below -0.9V.

t STOP = CSS • {(RSS = RMIN ) || 5 kΩ} (5)

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FSFR-US Series • Rev.1.0.2 11
 FSFR-US Series — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter
5.3 Over-Voltage Protection (OVP): When the LVCC 7. PCB Layout Guidelines: Duty unbalance problems
reaches 23V, OVP is triggered. This protection is used may occur due to the radiated noise from main
when auxiliary winding of the transformer to supply VCC transformer, the inequality of the secondary side leakage
to FPS is utilized. inductances of main transformer, and so on. Among
them, it is one of the dominant reasons that the control
5.4 Thermal Shutdown (TSD): The MOSFETs and
components in the vicinity of RT pin are enclosed by the
the control IC in one package makes it easy for the primary current flows pattern on PCB layout. The
control IC to detect the abnormal over-temperature of direction of the magnetic field on the components caused
the MOSFETs. If the temperature exceeds by the primary current flow is changed when the high-and
approximately 130°C, the thermal shutdown triggers. low-side MOSFET turn on by turns. The magnetic fields
with opposite directions induce a current through, into, or
out of the RT pin, which makes the turn-on duration of
6. Current Sensing Using Resistor: FSFR-US series each MOSFET different. It is strongly recommended to
senses drain current as a negative voltage, as shown in separate the control components in the vicinity of RT pin
Figure 23 and Figure 24. Half-wave sensing allows low from the primary current flow pattern on PCB layout.
power dissipation in the sensing resistor, while full-wave Figure 25 shows an example for the duty-balanced case.
sensing has less switching noise in the sensing signal.
Cr

Np Ns

Ns

Control
IC
VCS
Ids
CS

SG PG
Rsense

VCS
Ids

Figure 25. Example for Duty Balancing

Figure 23. Half-Wave Sensing

Ids

VCS

Cr
Control
IC
VCS
Np Ns
CS

SG PG
Rsense Ns

Ids

Figure 24. Full-Wave Sensing

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FSFR-US Series • Rev.1.0.2 12
 FSFR-US Series — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter
Physical Dimensions

26.20
25.80 3.4 0
3.0 0
23.10
22.90 (1.7 0) (1.2 0)
(R0.5 0)

5.35
5.15
10 .70
10 .30 (1 1.0 0)
1 4.50
(0 .7 0) 1 3.50
(0.5 0) 1 8.50
R0 .55 1 7.50

R0 .55
8.00
7.00 M AX 1.30 (7 .0 0)
1.3 0
1.1 0

(5 .0 8)
0.60
1 .27 MAX 0.80 0.40
0.7 0
0.5 0 3.4 8
2 .88
1 5.24

(R0.5 0)
3.4 0
3.0 0

N OTES: UNL ESS O THERW IS E S P ECIFIED

A) THIS PACKAG E DO ES N OT COM PLY
TO ANY CURRENT PACKAGIN G STAN DAR D.
B) ALL DIM ENSIO NS ARE IN MIL LIMETERS.
C) DIMENSIO NS ARE EXCLUSIVE OF BU R RS,
MOL D FL ASH, AND TIE BAR EXT RUSIONS.

SIPMO DAA0 9revA

Figure 26. 9-SIP Package

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FSFR-US Series • Rev.1.0.2 13
 FSFR-US Series — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter
Physical Dimensions

Figure 27. 9-SIP L-Forming Package

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FSFR-US Series • Rev.1.0.2 14
 FSFR-US Series — Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FSFR-US Series • Rev.1.0.2 15