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    Transistor H9014 o S9014

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    Tux Tux
    The document provides specifications for the S9014 NPN epitaxial planar transistor, including its features, maximum ratings, electrical characteristics, classification based on current gain, characteristic curves, and TO-92 package dimensions. The transistor is designed for use in pre-amplifiers requiring low noise and power.

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    Transistor H9014 o S9014

    Uploaded by

    Tux Tux
    31 views3 pages
    The document provides specifications for the S9014 NPN epitaxial planar transistor, including its features, maximum ratings, electrical characteristics, classification based on current gain, characteristic curves, and TO-92 package dimensions. The transistor is designed for use in pre-amplifiers requiring low noise and power.

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    The document provides specifications for the S9014 NPN epitaxial planar transistor, including its features, maximum ratings, electrical characteristics, classification based on current gain, characteristic curves, and TO-92 package dimensions. The transistor is designed for use in pre-amplifiers requiring low noise and power.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    31 views3 pages

    Transistor H9014 o S9014

    Uploaded by

    Tux Tux
    The document provides specifications for the S9014 NPN epitaxial planar transistor, including its features, maximum ratings, electrical characteristics, classification based on current gain, characteristic curves, and TO-92 package dimensions. The transistor is designed for use in pre-amplifiers requiring low noise and power.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    TIGER ELECTRONIC CO.

    ,LTD

    S9014
    NPN EPITAXIAL PLANAR TRANSISTOR

    Description
    The S9014 is designed for use in pre-amplifier of low level and low
    noise.

    Features
    • High Total Power Dissipation. (PD:450mW)
    • Complementary to S9015
    • High hFE and Good Linearity.

    Absolute Maximum Ratings


    • Maximum Temperatures
    Storage Temperature ............................................................................................... -55~+150°C
    Junction Temperature ..................................................................................... +150°C Maximum
    • Maximum Power Dissipation
    Total Power Dissipation (Ta=25°C) ................................................................................ 450 mW
    • Maximum Voltages and Currents (Ta=25°C)
    VCBO Collector to Base Voltage ......................................................................................... 50 V
    VCEO Collector to Emitter Voltage ...................................................................................... 45 V
    VEBO Emitter to Base Voltage .............................................................................................. 5 V
    IC Collector Current ........................................................................................................ 100 mA

    Characteristics (Ta=25°C)
    Symbol Min. Typ. Max. Unit Test Conditions
    BVCBO 50 - - V IC=100uA, IE=0
    BVCEO 45 - - V IC=1mA, IB=0
    BVEBO 5.0 - - V IE=100uA, IC=0
    ICBO - - 50 nA VCB=50V, IE=0
    IEBO - - 50 nA VEB=5V, IC=0
    VCE(sat) - 0.14 0.3 V IC=100mA, IB=5mA
    VBE(sat) - 0.84 1.0 V IC=100mA, IB=5mA
    VBE(on) 0.58 0.63 0.7 V VCE=5V, IC=2mA
    hFE 100 280 1000 VCE=5V, IC=1mA
    Cob - 2.20 3.5 pF VCB=10V, f=1MHz, IE=0
    fT 150 270 - MHz VCE=5V, IC=10mA

    Classification on hFE
    Rank B C D
    Range 100-300 200-600 400-1000

    TIGER ELECTRONIC CO.,LTD


    TIGER ELECTRONIC CO.,LTD

    Characteristics Curve

    Current Gain & Collector Current Saturation Voltage & Collector Current
    1000 10000

    Saturation Voltage (mV)


    1000

    hFE @ VCE=5V VBE(sat) @ IC=10IB


    hFE

    100

    100

    VCE(sat) @ IC=10IB

    10 10
    0.1 1 10 100 1000 10000 0.1 1 10 100 1000
    Collector Current (mA) Collector Current (mA)

    On Voltage & Collector Current Capacitance & Reverse-Biased Voltage


    10000 100
    Capacitance (pF)
    On Voltage (mV)

    1000 10

    Cob
    VBE(on) @ VCE=5V

    100 1
    0.1 1 10 100 1000 0.1 1 10 100
    Collector Current (mA) Reverse-Biased Voltage (V)

    Cutoff Frequency & Collector Current Safe Operating Area


    1000 10000
    PT=1ms

    PT=100ms
    1000
    Cutoff Frequency (MHz)

    Collector Current-IC (mA)

    PT=1s

    VCE=1V

    100 100

    10

    10 1
    1 10 100 1000 1 10 100
    Collector Current (mA) Forward Voltage-VCE (V)

    TIGER ELECTRONIC CO.,LTD


    TIGER ELECTRONIC CO.,LTD

    TO-92 Dimension

    α2
    A

    B
    1 2 3

    α3

    C 3-Lead TO-92 Plastic Package


    D TGS Package Code : A

    H G

    I α1
    E
    F

    *:Typical
    Inches Millimeters Inches Millimeters
    DIM DIM
    Min. Max. Min. Max. Min. Max. Min. Max.
    A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
    B 0.1704 0.1902 4.33 4.83 H - *0.1000 - *2.54
    C 0.5000 - 12.70 - I - *0.0500 - *1.27
    D 0.0142 0.0220 0.36 0.56 α1 - *5° - *5°
    E - *0.0500 - *1.27 α2 - *2° - *2°
    F 0.1323 0.1480 3.36 3.76 α3 - *2° - *2°

    TIGER ELECTRONIC CO.,LTD

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