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    Edc Paper

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    Edc Paper

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    of Pages: 02

    NETAJI SUBHAS UNIVERSITY OF TECHNOLOGY


    B. Tech. - II Semester
    Open Book Exam - July 2020
    Course Code: ICECC02 Course Title: Electronics Devices & Circuits Max. Marks: 25
    Time: 2 Hrs (for Writing Answers) + 30 Mins (Download Question Paper, Scan & Upload
    Answer Script)

    Note:
    ❖ There are 8 questions. Each question is of equal marks. Student may attempt any 5
    question.
    ❖ Students must answer the questions in the same order as listed in the question
    paper.
    ❖ Students must use A4 size sheets to write the answers and must number each page at
    Top Right Corner in a clearly readable form. Each of the A4 size sheet used must be
    signed by the student at the Bottom Right in a clearly readable form.
    ❖ Students must scan all the pages of their answer scripts and duly filled in undertaking
    form using a scanning App (like Adobe Scan) to create a PDF file. Students must
    upload this PDF file on the Google classroom / on any other platform as suggested
    by the Chairperson, CCC.
    ❖ After uploading their answer script, Students must scan all the pages used for rough
    work in a separate PDF file and keep it ready with them so as to submit immediately
    to the Chairperson, CCC as and when asked. Students should retain the physically
    written answer script pages & rough work pages securely. The students may be
    required to submit these to Chairperson, CCC after the university gets opened for
    physical presence of the students.
    ❖ Missing data / information, if any, maybe suitably assumed & mentioned in the
    answer.

    Q.
    Question Marks
    No.
    Show that the intrinsic concentration of Silicon and Gallium Arsenide
    1 5
    at 300 K are 1.4995𝑥1010 𝑐𝑚−3 and 1.797𝑥106 𝑐𝑚−3, respectively.
    The doping concentrations of an n-region is 5𝑥1015 𝑐𝑚−2 and that of
    A p-region is 5𝑥1017 𝑐𝑚−2 . The zero bias depletion capacitance
    2 across the p-n junction formed with these concentrations is 0.60 pF. 5
    What value of inductor will be used here with a reverse bias of 1V to
    select a channel that is transmitting at a frequency of 6.57 MHz?
    Determine the current passing through each diode and the voltage VA
    3 5
    and VB in the circuit of Fig. 1 assuming 𝑉𝛾 = 0.7 𝑉 for each diode.
    For the circuit in Fig. 2,  = 100, R1 = 10 k, and R2 = 20 k. Find
    4 (i) RBB, and VBB, (ii) IBQ, ICQ, VE, and VC. Also show that this biasing 5
    scheme puts the Q-point in normal active region of the transistor.

    1
    The circuit in Fig. 3 has  = 100 and VA = . For RE = 1 k, determine
    (i) ICQ such that the small-signal voltage gain 𝐴𝑣 = 0.95. (ii) the
    5 5
    voltage gain if VA = 20 V using the vaue of part (i), (c) the small-
    signal output resistance RO for both parts (i) and (ii).
    The circuit in Fig. 4 has 𝑉𝑡𝑛 = −2 𝑉,  = 0.01/V, 𝑘𝑛 = 10 𝑚𝐴/𝑉 2 ,
    RL = 1 k, and RG = 100 k. Design the circuit such that 𝐼𝐷𝑄 = 5 𝑚𝐴.
    6 5
    Find the output resistance and the small-signal voltage gain 𝐴𝑣 =
    𝑣𝑂 /𝑣𝑖 of the amplifier. Here, 𝑘𝑛 = 𝜇𝑛 𝐶𝑜𝑥 (𝑊/𝐿).
    The circuit in Fig. 5 has RD = RL = 5 k, RG = 200 k, 𝑉𝑡𝑝 = −2 𝑉,
    and = 0. Determine (i) the value of 𝑘𝑝 and RS such that the source to
    7 5
    drain voltage is equal to 6 V, (ii) the value of 𝐼𝐷 and the small-signal
    voltage gain. Here, 𝑘𝑝 = 𝜇𝑝 𝐶𝑜𝑥 (𝑊/𝐿).
    The maximum ON state current through an SCR is 40 A. If the
    conduction angle of the SCR is (a) 900 and (b) 300, what are the
    8 5
    average and the rms current of the SCR for controlling the power of a
    circuit?

    +5 V +10 V
    + 5V

    10 k
    D2 D3 1 k
    VA R1
    VB VE
    𝑣𝑖
    D1 T
    10 k 𝑣𝑂
    VC
    5 k R2 RE
    2 k
    −5 V
    −10 V
    −5 V
    Fig. 1 Fig. 2 −10 V Fig. 3
    +5V

    +5V RS

    CG CG CS
    CS
    CD
    𝑣𝑂
    RG 𝑣𝑂
    𝑣𝑖 +− RL + 𝑣𝑖 RG
    RS − RD RL
    −5V
    Fig. 4 −5 V
    Fig. 5
    .

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