Magnetic properties of (Ga,Mn)As films & related nano-wire(s) with higher Curie temperature Jianhua Zhao

State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China Collaborated with:
L.Chen, S.Yan, P. F.Xu, X.Qian, Y.Ji, X.Yang, F.H.Yang, X.Chen, L.H.Chen, K. Zhu, H.Z. Zheng, Institute of Semiconductors, CAS Kh. Khazen, H. J. von Bardeleben Universit Paris 6, UMR 7588 au CNRS, France

Supported by: National Nature Science Foundations of China Special Funds for Major State Basic Research Project Knowledge Innovation Program Project of CAS WUN-SPIN10

Outline
Background Growth and magnetic property of highly Mn-doped (Ga,Mn)As films Magneto-transport behaviors of highly Mn-doped (Ga,Mn)As films & nano-wire(s) A brief review on our recent study about some typical semiconductor spintronic materials Summary

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Outline
Background Growth and magnetic property of highly Mn-doped (Ga,Mn)As films Magneto-transport behaviors of highly Mn-doped (Ga,Mn)As films & nano-wire(s) A brief review on our recent study about some typical semiconductor spintronic materials Summary

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Background: Semiconductor Spintronics

Spin

Charge

Electron

Two important material systems: (1) Ferromagnetic semiconductors (2) Ferromagnet/semiconductor heterostructures Challenges: Ferromagnetic semiconductors with high Curie temperature (III-V, II-VI, IV groups) Ferromagnet/semiconductor heterostructures with high quality (high spin-polarization, high-quality interface, crystalline)

Background: Ferromagnetic semiconductors

Typical III-V group: (In,Mn)As, (Ga,Mn)As Other III-V group: (Ga,Mn)N, (Ga,Cr)N, (Ga,Fe)As, (Ga,Mn)Sb, (Ga,Cr)As II-VI group: (Cd,Mn)Te, (Zn,Mn)Se, (Zn,Co)O, (Zn,Mn)O , (Zn,Cr)Te IV group: GeMn, SiMn III-VI group: (Ga,Mn)S, (Ga,Fe)Se, (In,Mn)S, (In,Mn)Se IV-VI group: (Pb,Sn,Mn)Te, (Ge,Cr)Te, (Ge,Mn)Te, (Pb,Sn,Mn)Te Diluted magnetic semiconductor QDs: (In,Mn)As, (In,Cr)As

Some DMS with spontaneous magnetization at 300 K

(Ga,Mn)N, (In,Mn)N, (Ga,Cr)N, (Al,Cr)N, (Ga,Gd)N, (Ga,Fe)N, (Ga,Mn)Sb, (Ga,Mn)P:C (Zn,Mn)O, (Zn,Ni)O, (Zn,Co)O, (Zn,V)O, (Zn,Fe,Cu)O, (Zn,Cr)Te (Ti,Co)O2, (Sn,Co)O2, (Sn,Fe)O2, (Hf,Co)O2 (Cd,Ge,Mn)P2, (Zn,Ge,Mn)P2, (Zn,Sn,Mn)As2 (Ge,Mn) (La,Ca)B6,C, C60, HfO2

Mechanism of room-temperature ferromagnetism is unclear!

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Background: Ferromagnetic semiconductors

(Ga,Mn)N

M-H SQUID

MCD-H

The room-temperature ferromagnetism of the sample arises from an unidentified material that is not detected by the x-ray diffraction K. Ando, APL Vol. 82, (2003)100 WUN-SPIN10

Background: Ferromagnetic semiconductors

(Zn,Cr)Te

MCD-H

M-H SQUID

Ferromagnetic semiconductor with intrinsic ferromagnetism?

H. Saito et al., PRL, Vol 20, (2003)207202 WUN-SPIN10

Background: Ferromagnetic semiconductors

(Zn,Cr)Te

Formation of Cr-rich (Zn,Cr)Te metallic nanocrystals embedded in the Cr-poor (Zn,Cr)Te matrix T. Dietl, Nature materials, Vol. 6 (2007)440 WUN-SPIN10

Background: Ferromagnetic semiconductors

RT ferromagnetism in DMS theoretically requires:

holes magnetic ions

Magnetization above room temperature reported even:

without valence band holes without magnetic ions

Mechanism of room-temperature ferromagnetism is unclear!

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Phantom ferromagnetism Inhomogeneous ferromagnetism

a) random distribution b) crystallographic or chemical phase separation c) aggregation at surfaces or interfaces d) aggregation in grain boundaries
from J. M. D. Coey

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Background: The model material of diluted magnetic semiconductors: (Ga,Mn)As

(Ga,Mn)Asthe model of DMS
abnormal Hall effect non-zero coercive force in MCD-H curves non-zero coercive force in M-H curves Mr-T curves is clean

Tomasz Dietl

xMn = 0.05,

p = 3 1020 cm-3

(Ga,Mn)As: Tc ~ 300 K xMn = 0.125, p = 3.5 1020 cm-3 Hideo Ohno T. Dietl et al, Science, 287, 1019 (2000) P. R. B63, 195205 (2001) H. Ohno, et al., APL 69, 363 (1996)

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Background: Historical records of the Curie temperature of (Ga,Mn)As

TC increased in 10 K/year since 1996

Annealed Tc = 185 K PRL, Vol. 101 (2008) 077201 University of Nottingham

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Outline
Background Growth and magnetic property of highly Mn-doped (Ga,Mn)As films Magneto-transport behaviors of highly Mn-doped (Ga,Mn)As films & nano-wire(s) A brief review on our recent study about some typical semiconductor spintronic materials Summary

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Growth and magneto-transport measurement systems of (Ga,Mn)As

SQUID Ga, As , Mn

MBE system with two growth chambers (V80) PPMS WUN-SPIN10

Growth of heavily Mn-doped (Ga,Mn)As films

200 oC 200 oC 580 oC

V/III = 8 Thickness = 5~70 nm Ta= 160 oC

L. Chen et al., Appl. Phys. Lett., Vol.95, (2009) 182505 WUN-SPIN10

Excellent interface and crystal quality

X-ray reflection spectra of sample A red dots and B blue line. Inset: high-resolution XRD spectrum black line and its simulation red dotted line for sample A. Kh. Khazen, H. J. von Bardeleben, J. L. Cantin, A. Mauger, L. Chen and J. H. Zhao, Phys. Rev. B 81, 235201 (2010)

Mn%=14.7%

Magnetic homogeneity

T = 60K

Both magnetization and FMR measurements show excellent magnetic homogeneity. With no gradient in the Mn concentrations and no Mn clustering effects.

Kh. Khazen, H. J. von Bardeleben, J. L. Cantin, A. Mauger, L. Chen and J. H. Zhao, Phys. Rev. B 81, 235201 (2010)

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Magnetization versus field of (Ga,Mn)As films with high Mn concentration

7 nm, 14%

Robust!

GaMnAs 7 nm GaAs buffer

GaAs S-I (001)

500 nm, 6%

T=5K

Mn: ~14%

Both coercive forces: 25 Guass 8 times larger than normal sample

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Abnormal Hall effect of highly Mn-doped (Ga,Mn)As films

0.8

1.5 K 100 K 185 K

0.4

RHall ()

0.0

-0.4

-0.8 -1.5 -1.0 -0.5 0.0 B (T) 0.5 1.0 1.5

Important fingerprint of DMS WUN-SPIN10

MCD curves of highly Mn-doped (Ga,Mn)As films

Important fingerprint of DMS WUN-SPIN10

Magnetic anisotropy of highly Mn-doped (Ga,Mn)As films

KU, KC (10 erg/cm )
3

50 M (emu/cm )
3

T=5K
B // [-1 1 0] B // [ 1 1 0] B // [ 1 0 0]

KC KU

-50 0 -0.10 -0.05 0.00 B (T) 0.05 0.10

50

100 T (K)

150

(a) M-H loops measured at 5 K. (b) KU and KC estimated from M-H curves. Consistently [-110] magnetic easy axis is revealed.

PRL, 95, 217204 (2005)

arXiv: 0908.421v1

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Remanent magnetization versus temperature of highly Mn-doped (Ga,Mn)As films with different thickness

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The highest Curie temperature of (Ga,Mn)As: 191K

50 0 -50 -1200 -600
80 Mr (emu/cm ) 60 40 20 0 0 50 100 150 T (K) 200 250 300 as grown annealed B=0T
3

M (emu/cm )

B // Plane

5K 170 K 190 K
0 600 1200

B (Oe)
xeff =10.1%

TC = 191 K

xeff = M S / 0 N 0 g B S

L. Chen et al., Appl. Phys. Lett., Vol.95, (2009) 182505 WUN-SPIN10

Outline
Background Growth and magnetic property of highly Mn-doped (Ga,Mn)As films Magneto-transport behaviors of highly Mn-doped (Ga,Mn)As films & nano-wire(s) A brief review on our recent study about some typical semiconductor spintronic materials Summary

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Temperature dependence of sheet resistivity of (Ga,Mn)As films

Resistivity minimum at Tm = 10 K

x: less than 2% or around 7% usually show an insulating character F. Matsukura et al., PRB., Vol. 57 (1998)

x: around 5%, at temperature well below TC the resistivity starts to decrease and reach a minimum at about 10 K, and then increase again with decreasing temperature. H.T. He et al, APL., 87 (2005)

x: 6%, very metallic samples with the resistivity decreases steadily and does not show any minimum at temperature below Tc. L. Thevenard, et al, APL., 87 (2005)

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Magneto-transport behaviors of highly Mn-doped (Ga,Mn)As

As-grown

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Magneto-transport behaviors of highly Mn-doped (Ga,Mn)As

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Kondo effect of heavily Mn-doped (Ga,Mn)As films?

= + T 2 + ln(T )
= 0.00007 = 0.19502
rmin merely changes under the external field

Seem to be a typical Kondo effect

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Magneto-transport behaviors of highly Mn-doped (Ga,Mn)As

Kondo effect

Mott variable-range-hopping

Altshulter scaling

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Magneto-transport behaviors of highly Mn-doped (Ga,Mn)As

Including the spin disorder scattering of holes by spin fluctuation (=T2)

Transport in these samples is characterized by Mott variable-range hopping

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Possible magneto-transport mechanism at low temperature

Kondo effect Electron-electron interaction Mott variable-range-hopping Three-dimensional scaling theory of Andersons transition

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Manipulation of magnetization
Light Electric field Magnetic field Nano-structures

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AFM image of ensemble (Ga,Mn)As wires along the [-110] direction

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40 M (emu/cm )
3

T=5K H // [-110] H // [100]

M (emu/cm )

10
3

Hc = 60 Oe
0

T=5K Hc = 200 Oe H // [-110] H // [100]

-40

parent layer
-2000 -1000 0 H (Oe) 1000 2000

-10 -2000 -1000

pattern layer
0 H (Oe) 1000 2000

Ensemble (Ga,Mn)As wires along [-110] direction

60 30 M (emu/cm )
3

T=5K H // [-1 1 0] H // [ 1 1 0]
M (emu/cm )
3

T=5K

0 -30

H // [-110] H // [110]
-5

parent layer
-60 -400 0 H (Oe) 400
-2000 -1000 0

pattern layer
1000 2000 H (Oe)

Ensemble (Ga,Mn)As wires along [110] direction

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SEM image of (Ga,Mn)As wire along the [-110] direction

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Transport behaviors of a single nano-wire of (Ga,Mn)As

7.0

6.58

350nmx 47nm wire

(m.cm)
(m.cm)
6.51

1.5 K

6.5

3.3 K

6.44

4.2 K 6.0 K

6.0

6.37 -1.0 -0.5 0.0 0.5

1.0

50

100

150

200

H (T)

T (K)

(a) Temperature dependence of resistivity curve. (b) Magnetic field dependence of resistivity curves.

Summary (I)

1. The highest TC of 191 K has been obtained in (Ga,Mn)As films 2. Both TEM and XRD confirm their high crystalline quality 3. SQUID, FMR, MCD demonstrate their magnetic homogeneity 4. Abnormal low-temperature transport behaviors have been investigated 5. Manipulation of magnetic properties by patterning

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Outline
Background Growth and magnetic property of highly Mn-doped (Ga,Mn)As films Magneto-transport behaviors of highly Mn-doped (Ga,Mn)As films & nano-wire(s) A brief review on our recent study about some typical semiconductor spintronic materials Summary

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Molecular-beam epitaxy with twin growth chambers

Mn, Cr Ga, In, Al As, Sb, Si

Fe, Mn, Co, Ga, Al, As, Be Si, Nb (e-beam)

(VG80)
17 source materials, including 5 magnetic cells

Metal & alloy films

Fe single crystal film grown on GaAs

Fe/GaAs

Calculated normalized magnetic anisotropy energy J.Lu et al., Physica E 42 (2009) J. Lu et al., J. Appl. Phys. 106 (2009)

Growth of hexagonal MnAs films on GaAs (011)

[0001]

[1010]

The Curie temperature of MnAs /GaAs (011) exceeds 350K

Half-metallic films

A novel kind of half metal zincblende chromium pnictides

J. F. Bi et al., Appl. Phys. Lett.. 88, 142509 (2006) J.J. Deng et al., J. Appl. Phys. 99 (2006) 093902 J.J. Denget al., Chin. Phys. Lett., Vol.23 (2006) 493

Growth of half metal---Heusler alloy Co2FeAl films on GaAs

100000

GaAs(004)

10000

Intensity

1000

Co2FeAl(004)

100

10
63 64 65 66 67

2(degree)
1.5
1.0

1.0

0.5

0.5

M/Ms

0.0

M/Ms

Hc=20Oe
-0.5

Hs=50 Oe
0.0

H//[110]
-80 -60 -40 -20 0 20 40 60 80 100

-0.5

-1.0
-1.0

H//[-110]
-100 -80 -60 -40 -20 0 20 40 60 80 100

-1.5 -100

H (Oe)

H (Oe)

Self-assembled ferromagnetic semiconductor quantum dots

(In,Cr)As QDs with room-temperature ferromagnetism

H. J. Meng et al., Phys. Lett. A 373 (2009) H. J. Meng et al., EPL, 84 (2008) Y.H. Zheng, et al., CPL, 2118, (2007)

Summary (II)
Mn(Ga)As clusters (Ga,Mn)As (Ga,Cr)As

Zinblende CrAs

(In,Cr)As QDs

Fe/GaAs

SKLSM

Thank you!
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