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    AprilMay 2023

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    Prasad

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    AprilMay 2023

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    AprilMay-2023

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    Code No: 153AT R18

    JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD


    B. Tech II Year I Semester Examinations, April/May - 2023
    ELECTRONIC DEVICES AND CIRCUITS
    JN
    (Common to ECE, EIE, MCT)
    Time: 3 Hours Max. Marks: 75

    Note: i) Question paper consists of Part A, Part B.


    TU
    ii) Part A is compulsory, which carries 25 marks. In Part A, Answer all questions.
    iii) In Part B, Answer any one question from each unit. Each question carries 10 marks
    and may have a, b as sub questions.
    H
    PART – A
    (25 Marks)
    U
    1.a) Define forward static and dynamic resistances of diode. [2]
    b) What is the difference between Clipping and Clamping? [3]
    se
    c) Why is BJT a current controlled Transistor? [2]
    d) Define the Stability factors for Fixed Bias Circuit. [3]
    e) Define Transconductance. [2]
    d
    f) What are the advantages of FET over BJT? [3]
    g) What are the conditions for approximate h-parameter model? [2]
    h) Draw h-parameter model for CE amplifier. [3]
    pa
    i) Draw the Small Signal Model of FJET. [2]
    j) Why the input impedance of FET is higher than BJT? [3]

    PART – B
    pe
    (50 Marks)

    2.a) Explain the operation of forward biased and reverse biased PN junction Diode.
    rs
    b) Discuss the operation of capacitive filter with bridge rectifier and also derive an
    expression for its stability factor. [5+5]
    OR
    20
    3.a) Describe the current components in a PN junction diode. Also derive the Diode current
    equation.
    b) Explain the operation of negative clamping circuit. [5+5]
    23
    4.a) With necessary circuit and waveform, explain the switching characteristics of a transistor
    in detail.
    b) In a Silicon transistor circuit with a fixed bias, VCC=9V, RC=3KΩ, RB=8KΩ, β = 50,
    VBE=0.7V. Find the operating point and Stability factor. [5+5]
    OR
    5.a) Explain the DC and AC load Line analysis.
    b) Briefly explain about Bias Compensation and Stabilization. [5+5]
    6.a) Describe the construction and working of UJT with its equivalent circuit and V-I
    Characteristics.
    b) With a neat diagram explain the working of Varactor Diode. [5+5]
    JN
    OR
    7.a) Describe the principle of operation of Tunnel diode with a neat diagram.
    b) Explain the working of a P channel JFET and draw the V-I characteristics of it. [5+5]
    TU
    8.a) Derive the equations for voltage gain, current gain, input impedance and output
    admittance for a BJT using low frequency h-parameter model for CC configuration.
    b) If the Common Emitter h –parameters of a transistor are given by hie = 2000 Ω, hfe = 49,
    hre = 5.5 × 10-4 and hoe = 2.5 × 10-5, find the common base h-parameters of the transistor.
    H
    [5+5]
    OR
    9.a) Illustrate the steps involved in analyzing a BJT amplifier circuit using small signal model.
    U
    b) Draw the circuit diagram and equivalent circuit of an emitter follower amplifier and
    derive the expression for Av, Ai and input impedance. [5+5]
    se
    10.a) Draw the circuit of source follower Amplifier and derive the expressions for AI , AV, Ri
    and Ro.
    d
    b) Describe the construction and explain the operation of depletion mode MOSFET. Also
    draw the static characteristics. [5+5]
    OR
    pa
    11.a) Illustrate the behavior of a MOSFET based amplifier circuit with tuned load. Also deduce
    expression for voltage gain at center frequency, Q and Bandwidth.
    b) Draw and explain small-signal model of a MOSFET. [5+5]
    pe

    ---ooOoo---
    rs
    20
    23

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