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    April 2018

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    This document is a question paper for an exam on basic electrical and electronics engineering. It has two parts, with Part A consisting of short answer questions worth a total of 25 marks. Part B consists of 5 sections, with students required to answer one full question from each section worth 10 marks each, for a total of 50 marks. The questions cover topics such as circuit analysis techniques, AC circuits, rectifiers, semiconductor devices including diodes, BJTs and JFETs. Students are required to calculate values, draw diagrams, derive expressions, compare different configurations, and explain concepts.

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    April 2018

    Uploaded by

    keerthan nani entertainment channel
    24 views3 pages
    This document is a question paper for an exam on basic electrical and electronics engineering. It has two parts, with Part A consisting of short answer questions worth a total of 25 marks. Part B consists of 5 sections, with students required to answer one full question from each section worth 10 marks each, for a total of 50 marks. The questions cover topics such as circuit analysis techniques, AC circuits, rectifiers, semiconductor devices including diodes, BJTs and JFETs. Students are required to calculate values, draw diagrams, derive expressions, compare different configurations, and explain concepts.

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    April-2018

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    This document is a question paper for an exam on basic electrical and electronics engineering. It has two parts, with Part A consisting of short answer questions worth a total of 25 marks. Part B consists of 5 sections, with students required to answer one full question from each section worth 10 marks each, for a total of 50 marks. The questions cover topics such as circuit analysis techniques, AC circuits, rectifiers, semiconductor devices including diodes, BJTs and JFETs. Students are required to calculate values, draw diagrams, derive expressions, compare different configurations, and explain concepts.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    24 views3 pages

    April 2018

    Uploaded by

    keerthan nani entertainment channel
    This document is a question paper for an exam on basic electrical and electronics engineering. It has two parts, with Part A consisting of short answer questions worth a total of 25 marks. Part B consists of 5 sections, with students required to answer one full question from each section worth 10 marks each, for a total of 50 marks. The questions cover topics such as circuit analysis techniques, AC circuits, rectifiers, semiconductor devices including diodes, BJTs and JFETs. Students are required to calculate values, draw diagrams, derive expressions, compare different configurations, and explain concepts.

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    Code No: 132AJ

    R16
    JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD
    B.Tech I Year II Semester Examinations, April - 2018
    JN
    BASIC ELECTRICAL AND ELECTRONICS ENGINEERING
    (Common to CE, ME, MCT, MMT, AE, MIE, PTM, CEE, MSNT)
    Time: 3 hours Max. Marks: 75
    TU
    Note: This question paper contains two parts A and B.
    Part A is compulsory which carries 25 marks. Answer all questions in Part A.
    Part B consists of 5 Units. Answer any one full question from each unit. Each
    H
    question carries 10 marks and may have a, b, c as sub questions.

    PART- A
    U
    (25 Marks)

    1.a) Distinguish between ideal and practical voltage source? [2]


    SE
    b) State Ohm’s law and give an example. [3]
    c) What is resonance in electric circuits? [2]
    d) State the Maximum Power Transfer theorem. [3]
    e) Draw the equivalent circuit of an ideal diode and that of a piecewise linear model of it.
    D
    [2]
    f) Show the current paths in a full wave bridge rectifier for a sinusoidal input during
    positive and negative half cycles. [3]
    25
    g) Define operating point of a BJT. List the parameters against the variations of which the
    operating point needs to be stabilized. [2]
    h) Define hfe and hoe of a BJT in CE configuration. Mention their units. [3]
    -0
    i) What is pinch-off voltage for a JFET? [2]
    j) Draw the symbols of p-channel JFET, NPN-BJT, tunnel diode and varactor diode.
    [3]
    4-
    PART-B
    20
    (50 Marks)

    2.a) Making use of star/delta transformation, determine the resistance between terminals A
    1
    and B as shown in figure 1.
    8P
    M

    Figure: 1
    b) Derive the expression for the RMS, average values, peak factor and form factor of
    sinusoidal signal. [5+5]
    OR
    3.a) An inductance of 0.5H, a resistance of 5 ohms, and a capacitance of 8 μF are in series
    across a 220V, 50Hz AC supply. Find the voltage across each element and total current
    supplied by the supply and draw the phasor diagram for the circuit.
    JN
    b) In the following circuit shown in figure 2, the effective voltage between points A and B is
    25 volts. Find the corresponding effective values of V and IT. [5+5]
    TU
    H
    U
    Figure: 2
    SE
    Figure: 2
    4.a) Explain the procedure to draw the locus diagram of R-L series circuit, when L is varying.
    b) Apply super position theorem to the network shown in figure 3 and obtain current
    D
     3  j 4  impedance. [5+5]
    25
    -0
    4-
    Figure: 3
    OR
    20
    5.a) Derive the expression for resonant frequency, half power frequencies of series RLC
    circuit.
    b) Find the resonant frequency of the following circuit shown in figure 4. [5+5]
    1 8P
    M
    Figure: 4

    6.a) Differentiate between:


    i) Static and dynamic resistances of a diode.
    ii) Transition and diffusion capacitances of a diode.
    b) Define Rectification efficiency of rectifier. Derive expression to show that it is 81% for a
    Full wave rectifier. [5+5]
    OR
    7.a) Explain how current flows in a diode under forward biased and reverse biased conditions.
    b) Compare the performance of:
    i) Centre tapped transformer type and bridge type full wave rectifiers.
    JN
    ii) Capacitor and π-section filters. [5+5]

    8.a) Derive an expression for the stability factor S of a BJT with voltage divider bias.
    TU
    b) Draw the h-parameter equivalent circuit of a BJT in CE configuration. [5+5]
    OR
    9.a) For the voltage divider biased BJT shown below in figure 5, determine the operating
    point. Assume β to be 50 for the transistor.
    H
    12V

    22kΩ
    1.8kΩ
    U
    SE

    4.7kΩ
    560Ω
    D
    25
    Figure: 5
    b) Compare the characteristics of CE, CB and CC configurations of a BJT. [5+5]

    10.a) Compare BJT and JFET in all aspects.


    -0
    b) With the help of relevant energy band diagram explain tunnelling phenomenon in a
    Tunnel diode. [5+5]
    4-
    OR
    11.a) Draw the characteristics of an n-channel JFET in Common source configuration. Show
    pinch-off region on the curves.
    20
    b) How and under what conditions Zener breakdown take place in a diode? Draw the V-I
    characteristics of Zener diode and show the breakdown region. [5+5]
    1 8P
    ---ooOoo---
    M

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